Dr. Jingmin Leng Profile

Dr. Jingmin Leng

Senior Member of Techical Staff at KLA Corp

SPIE Involvement:

Author | Science Fair Judge

Publications (9)

Proceedings Article | 22 March 2008 Paper

Assessing scatterometry for measuring advanced spacer structures with embedded SiGe

Matthew Sendelbach, Shahin Zangooie, Alok Vaid, Pedro Herrera, Jingmin Leng, InKyo Kim

Proceedings Volume 6922, 69220R (2008) https://doi.org/10.1117/12.774823

KEYWORDS: Transmission electron microscopy, Semiconducting wafers, Deep ultraviolet, Single crystal X-ray diffraction, Ultraviolet radiation, Oxides, Scatterometry, UV optics, Metrology, Scatter measurement

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Proceedings Article | 10 May 2005 Paper

Critical dimension uniformity control with combined ellipsometry and reflectometry

Jon Opsal, Jingmin Leng, Xuelong Cao

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600124

KEYWORDS: Semiconducting wafers, Reflectometry, Thin films, Ellipsometry, Oxides, Reflectance spectroscopy, Line scan image sensors, Dispersion, Diagnostics, Inspection

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Proceedings Article | 10 May 2005 Paper

Optical characterization of 193nm amorphous carbon ARC films

Jingmin Leng, Jon Opsal, Heath Pois

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600138

KEYWORDS: Anisotropy, Semiconducting wafers, Etching, Carbon, Refractive index, Reflectance spectroscopy, Reflectometry, Ellipsometry, Optical properties, Data modeling

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Proceedings Article | 24 May 2004 Paper

Finite difference algorithm in real-time optical CD applications

Jon Opsal, Hanyou Chu, Jingmin Leng

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.556583

KEYWORDS: Silicon, Critical dimension metrology, Scatterometry, Diffusion tensor imaging, Bohrium, Neodymium, Mathematics, Scanning electron microscopy, Numerical stability, Metrology

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Proceedings Article | 4 November 2003 Paper

Thin film 193-nm TNK measurement using multidomain genetic algorithm (MDGA) and with a combination of Beam Profile Reflectometry (BPR), Absolute Ellipsometry (AE), and spectroscopic ellipsometry (SE)

Jon Opsal, Jingmin Leng, Chih-Ming Ke, Pei-Hung Chen, Jeng-Horng Chen, Yao-Ching Ku

Proceedings Volume 5188, (2003) https://doi.org/10.1117/12.507466

KEYWORDS: Oxides, Semiconducting wafers, Calibration, Thin films, Standards development, Genetic algorithms, Silicon, Reflectivity, Silicon films, Reflectometry

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In the l30nm process, controlling the critical dimension uniformity (CDU) within a wafer is crucial. In order to minimize CDU within a wafer, CD swing amplitude against film thickness must be minimized. It is observed that the CD swing amplitude is closely related to the reflectivity of the anti-reflective coating (ARC) layer under the resist. The suppressed reflectivity (ideally zero) from the ARC layer and underlying layers can be achieved by properly selecting a combination of thickness (T), refractive index (N) and extinction coefficient (K) of the ARC layer. Accurate and repeatable measurements of T, N, and K at a wavelength of 193nm play a key role in this film optimization process. In this paper we propose a new method to simultaneously measure T, N, and K for various silicon oxynitride (SION) and organic ARC films. The new methodology uses a multi-domain genetic algorithm (MDGA) to search for global fitting residual minima for SION and organic ARC films using 21-point line-scan data sets logged on each wafer with a combination of BPR, AE and SE measurement technologies. The MDGA-obtained dispersion curves form constituents of a Bruggeman effective medium approximation (EMA) model. By using this unique metrology tool combination, swing amplitudes can be reduced to less than 5nm. The measurement variations of N&K at 193nm from machine to machine on SION and organic ARC films can be minimized to as small as 0.002. We point out that there are no 193nm N&K standards in the world. In this work, we used a set of Therma-Wave standards with thicknesses traceable to NIST standards. We also used the published thermal oxide and crystalline Si dielectric constants (i.e., N&Ks) as our standards for dispersion. The matching of SE (as well as the other technologies) of each tool is ensured through calibrations of SE to the same set of standards. Finally, a recipe using the combination of BPR, AE, and SE technologies allows one to deal with the large TNK variations encountered in the production environment without losing the sensitivity to measure TNK precisely and accurately. On the contrary, a TNK recipe with SE technology only may yield reasonable precision results but would lose the sensitivity to the thin film TNK variation within the wafer and among the wafers.

Proceedings Article | 11 November 2002 Paper

Multidomain genetic algorithm (MDGA) and its applications to thin film metrology

JingMin Leng, John Sidorowich, Jon Opsal

Proceedings Volume 4779, (2002) https://doi.org/10.1117/12.453733

KEYWORDS: Titanium, Plasma, Semiconducting wafers, Thin films, Metrology, Genetic algorithms, Algorithm development, Plasma treatment, X-rays, Reflectivity

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We have developed a new Multi-domain Genetic Algorithm (MDGA) as a tool for advanced recipe development and applied it to metrology based on X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE). In our MDGA approach, multiple data sets are examined with the output being an optimal set of parameters for robust and rapid measurements. The data sets usually span the expected range of variations likely to be encountered in a process to be monitored (e.g., the data sets correspond to different thickness but with the same density or dispersion).In one application involving XRR measurements, a set of Ti films with thickness of 200 Å was plasma treated for 0 sec, 10 sec, 30 sec, 50 sec, and 100 sec. Although it was expected that the plasma treated Ti film had a higher density than the non-treated Ti film, we found that the plasma treated Ti film had to be modeled as a two-layer film stack: the plasma treated Ti on top of a regular Ti. Without the MDGA, the densities of the top plasma treated Ti and the bottom Ti traded off since they are so close. With the MDGA, the densities of the top and bottom Ti films were regarded as global optimization parameters while the thickness and roughness of each layer were allowed to vary as local parameters. Our results show that the MDGA can clearly separate the plasma treated Ti from the untreated Ti film across the entire wafer set. On the other hand normal non-linear regression methods cannot distinguish the plasma treated Ti from the untreated Ti. In an application using SE measurement of a bottom anti-reflective coating (BARC) material, a linescan of 11 points across a 200mm wafer was measured with the thickness of the BARC film treated as a local parameter while the dispersion was treated as a set of global parameters. With the help of the MDGA, the dispersion modeling of the BARC film captured two main features at ~ 4.77 eV (260nm) and ~ 5.07 eV(235nm), as well as three small peaks at 3.16 eV(392nm), 3.37 eV (368nm) and 3.53 eV (351nm). In this way, the measured dispersion of the BARC film is more representative of the entire wafer than any dispersion developed from a single point measurement.

Proceedings Article | 10 December 2001 Paper

Rapid x-ray reflectivity (XRR) characterization and process monitoring of multilayer Ta/Al2O3/Ta/SiO2/Si

JingMin Leng, Jon Opsal

Proceedings Volume 4449, (2001) https://doi.org/10.1117/12.450101

KEYWORDS: Tantalum, Aluminum, Reflectivity, X-rays, Dielectrics, Silicon, Refractive index, Reflection, X-ray characterization, Oxidation

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Proceedings Article | 2 November 2000 Paper

Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high-k dielectric film HfO2

JingMin Leng, Shifang Li, Jon Opsal, David Aspnes, Byoung Lee, Jack Lee

Proceedings Volume 4099, (2000) https://doi.org/10.1117/12.405823

KEYWORDS: Interfaces, Hafnium, Transmission electron microscopy, Dielectrics, Silicates, Semiconducting wafers, Silicon, Spectroscopic ellipsometry, Oxides, Sputter deposition

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Proceedings Article | 13 September 1996 Paper

Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack

JingMin Leng, John Sidorowich, Y. Yoon, Jon Opsal, B. Lee, Giho Cha, Joo-Tae Moon, Sang-In Lee

Proceedings Volume 2877, (1996) https://doi.org/10.1117/12.250935

KEYWORDS: Oxides, Spectroscopy, Semiconducting wafers, Silicon, Spectrophotometry, Scanning electron microscopy, Reflectometry, Sensors, Optical testing, Reflectivity

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Showing 5 of 9 publications

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