Mr. Jiu Li Profile

Jiu Li

at Peking Univ

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Proceedings Article | 16 March 2015 Paper

Polarization-dependent photocurrent in MoS2 phototransistor

Jiu Li, Wentao Yu, Saisai Chu, Hong Yang, Kebin Shi, Qihuang Gong

Proceedings Volume 9357, 93571F (2015) https://doi.org/10.1117/12.2077964

KEYWORDS: Polarization, Absorption, Field effect transistors, Molybdenum, Gold, Resonance enhancement, Phototransistors, Surface plasmons, Plasmonics, Nanostructures

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Monolayer or few-layer molybdenum disulfide (MoS₂) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS₂ thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS₂ transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS₂ field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS₂ FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos²θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.

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