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We study stochastic responses for three technology nodes:
• An SRAM cell for 7 nm technology node, with Numerical Aperture = 0.33 and patterned with organic chemically amplified resist
• An SRAM cell for 5 nm technology node, with Numerical Aperture = 0.33 and patterned with:
o Organic chemically amplified resist
o Fast photospeed organic chemically amplified resist
o Metal-oxide resist
• An SRAM cell for 3 nm technology node, patterned with organic chemically amplified resist and:
o Numerical Aperture = 0.33 in single exposure
o Numerical Aperture = 0.33 with double exposure
o Numerical Aperture = 0.55 with anamorphic pupil
For each case, we optimize mask bias, source illumination and process conditions across focus to maximize the optical contrast. We did not apply optical proximity correction to the mask. The purpose of the work is to evaluate the stochastic behavior of different features as a function of material strategy, technology node, and lithographic approach.
The simulation results are presented for both the traditional chemically amplified EUV resists and resists utilizing alternative mechanisms of image formation, such as metal based- resists.
Quantifying imaging performance bounds of extreme dipole illumination in high NA optical lithography
While absorbance is relatively easy to measure, yields are extremely difficult to quantify, and the debate on upper limits is far from settled. In this paper, we present how, using synchrotron light with tunable energy, we directly measured dispersion curves and electron yield for ArF, KrF and EUV photoresists using X-ray Absorption Spectroscopy.
Knowing the electron yield allowed us to better model organic EUV materials: stochastic simulations show how both electron yield and blur are very similar for organic materials, and how the electron blur is not a fixed property of the material, but may vary spatially, depending on a combination of photoresist formulation and local photon absorption density.
Stochastic and systematic patterning failure mechanisms for contact-holes in EUV lithography: Part 2
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