Dr. John V. Foreman Profile

Dr. John V. Foreman

at US Army RDECOM

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 15 April 2011 Open Access

Nanotechnology research and development for military and industrial applications

Paul Ruffin, Christina Brantley, Eugene Edwards, J. Keith Roberts, William Chew, Larry Warren, Paul Ashley, Henry Everitt, Eric Webster, John Foreman, Mohan Sanghadasa, Sihon Crutcher, Mark Temmen, Vijay Varadan, Devlin Hayduke, Pae Wu, Christopher Khoury, Yang Yang, Tong-Ho Kim, Tuan Vo-Dinh, April Brown, John Callahan

Proceedings Volume 7980, 798002 (2011) https://doi.org/10.1117/12.878970

KEYWORDS: Sensors, Raman spectroscopy, Combustion, Missiles, Gallium, Acoustics, Nanotechnology, Microfluidics, Carbon, Nanowires

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Proceedings Article | 1 May 2009 Paper

The potential of wide band-gap semiconductor materials in laser-induced semiconductor switches

Dane Phillips, Eric Smith, Haojun Luo, Patrick Wellenius, John Muth, John Foreman, Henry Everitt

Proceedings Volume 7311, 731109 (2009) https://doi.org/10.1117/12.818741

KEYWORDS: Semiconductors, Semiconductor lasers, Zinc oxide, Gallium nitride, Terahertz radiation, Silicon carbide, Pulsed laser operation, Wide bandgap semiconductors, Switches, Sapphire lasers

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Proceedings Article | 7 February 2009 Paper

Carrier dynamics and photoexcited emission efficiency of ZnO:Zn phosphor powders

John Foreman, Henry Everitt, Jianqiu Yang, Jie Liu

Proceedings Volume 7214, 721405 (2009) https://doi.org/10.1117/12.811561

KEYWORDS: Zinc oxide, Excitons, Luminescence, Quantum efficiency, Photons, Nanoparticles, Absorption, Particles, Atmospheric particles, Atrial fibrillation

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Proceedings Article | 15 February 2008 Paper

Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE

V. Avrutin, M. Reshchikov, J. Nie, N. Izyumskaya, R. Shimada, Ü. Özgür, J. Foreman, H. Everitt, C. Litton, H. Morkoç

Proceedings Volume 6895, 68950Y (2008) https://doi.org/10.1117/12.764132

KEYWORDS: Ions, Zinc oxide, Sapphire, Plasma, Oxygen, Luminescence, Optical properties, Molecular beam epitaxy, Control systems, Excitons

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Proceedings Article | 8 February 2007 Paper

Low dislocation density GaN grown by MOCVD with SiNx nano-network

J. Xie, Ü. Özgür, Y. Fu, X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. Foreman, H. Everitt

Proceedings Volume 6473, 647304 (2007) https://doi.org/10.1117/12.706936

KEYWORDS: Gallium nitride, Transmission electron microscopy, Metalorganic chemical vapor deposition, Silicon carbide, Sapphire, Diodes, Epitaxial lateral overgrowth, Tin, Nickel, Thin films

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Showing 5 of 6 publications

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