Fabrication of structures with high aspect ratios (HAR) enables creation of metasurface optics with ever-increasing functionality. Dielectric meta-atoms consist of transverse (x,y) shapes extruded in the z-dimension. The phase discontinuity imparted by the meta-atom is a function of the dielectric constant of the material and the z-height of the meta-atom. The performance of the meta-optic improves with larger phase swings. Here we demonstrate HAR etched structures in silicon and gallium arsenide. Initial etch development employs interferometric lithography while final patterns are realized using e-beam patterning. The paper will discuss this etch development process for both material sets.
We demonstrated enhanced efficiency in small molecule organic photovoltaic devices using dual organic interfacial layers of PEDOT:PSS followed by tetracene between the ITO anode and the organic donor material. The use of a small molecular templating layer, such as tetracene, proved to increase the molecular stacking of the subsequent phthalocyanine (Pc) based donor materials. Upon application in planar heterojunction devices of ZnPc and C60, an enhancement of over 80 percent in the donor contribution to the external quantum efficiency was observed attributed to the combination of exciton blocking by the higher band gap tetracene layer and enhanced exciton diffusion and charge transport resulting from the increased crystallinity.
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