Prof. John P. Prineas Profile

Prof. John P. Prineas

Professor at Univ of Iowa

SPIE Involvement:

Author

Area of Expertise:

epitaxial growth , optoelectronics , spectroscopy , III-V semiconductors , infrared , carrier dynamics

Websites:

Personal Website

Proceedings Article | 17 March 2023 Presentation

Cascaded mid-infrared LEDs in resonant structures

John Prineas, David Montealegre, Weitao Dai, Katrina Schrock, Logan Nichols, Matthew Bellus, Alex Walhof

Proceedings Volume PC12430, PC124300M (2023) https://doi.org/10.1117/12.2655279

KEYWORDS: Light emitting diodes, Mid-IR, Quantum efficiency, Optical microcavities, Superlattices, Refraction, Projection systems, Optical sensors, Molecular beam epitaxy, Methane

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Proceedings Article | 4 March 2022 Presentation + Paper

Improved mid-infrared W-superlattice LEDs using Al-treated source

David Montealegre, Matt Bellus, Alex Walhof, Logan Nichols, John Prineas

Proceedings Volume 12022, 120220B (2022) https://doi.org/10.1117/12.2610437

KEYWORDS: Light emitting diodes, Gallium, Oxides, Mid-IR, Crystals, Superlattices, Aluminum, Quantum efficiency, Gallium antimonide, Diodes

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Proceedings Article | 20 February 2017 Paper

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

K. Zhang, V. Ray, P. Herrera-Fierro, J. Sink, F. Toor, J. Prineas

Proceedings Volume 10114, 1011419 (2017) https://doi.org/10.1117/12.2267737

KEYWORDS: Nanowires, Indium arsenide, Silicon, Molecular beam epitaxy, Epitaxy, Heteroepitaxy, Temperature metrology, Crystals, Electron beam lithography, Scanning electron microscopy, Reactive ion etching, Mid-IR

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Proceedings Article | 16 February 2017 Paper

512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Russell Ricker, Sydney Provence, Lee Murray, Dennis Norton, Jonathon Olesberg, John Prineas, Thomas Boggess

Proceedings Volume 10124, 101241L (2017) https://doi.org/10.1117/12.2258468

KEYWORDS: Light emitting diodes, Superlattices, Mid-IR, Infrared radiation, Black bodies, Silicon, Indium, Diodes, Gallium antimonide, Molecular beam epitaxy

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Proceedings Article | 16 February 2017 Paper

Cascading, efficiency, and broadband emission in mid-infrared Superlattice Light Emitting Diodes (SLEDs)

J. Prineas, R. Ricker, A. Muhowski, C. Bogh, S. Provence, T. Boggess

Proceedings Volume 10124, 101240K (2017) https://doi.org/10.1117/12.2250431

KEYWORDS: Superlattices, Light emitting diodes, External quantum efficiency, Mid-IR, Quantum efficiency, Infrared radiation, Projection systems, Modulation, Black bodies, Internal quantum efficiency, Gallium antimonide, Gallium arsenide, Spectroscopy

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Proceedings Article | 4 May 2010 Paper

MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

Dmitri Lubyshev, Joel Fastenau, Xing Gu, Amy W. Liu, John Prineas, Edwin Koerperick, Jonathon Olesberg, Eric Jackson, Jill Nolde, Changhyun Yi, Edward Aifer

Proceedings Volume 7660, 76601J (2010) https://doi.org/10.1117/12.851053

KEYWORDS: Laser sintering, Semiconducting wafers, Gallium antimonide, Sensors, Indium arsenide, Satellites, Long wavelength infrared, Quantum efficiency, Antimony, Superlattices

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Proceedings Article | 18 February 2010 Paper

Terahertz and optical frequency mixing in semiconductor quantum-wells

Yun-Shik Lee, A. Jameson, J. Tomaino, J. Prineas, J. Steiner, M. Kra, S. Koch

Proceedings Volume 7582, 75820Y (2010) https://doi.org/10.1117/12.841199

KEYWORDS: Terahertz radiation, Excitons, Picosecond phenomena, Transient nonlinear optics, Quantum wells, Semiconductors, Ultrafast phenomena, Polarization, Optical testing, Solids

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Proceedings Article | 16 April 2008 Paper

Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation

Naresh Das, Fouad Kiamilev, J. Prineas, J. Olesberg, E. Koerperick, L. Murray, T. Boggess

Proceedings Volume 6942, 69420I (2008) https://doi.org/10.1117/12.782652

KEYWORDS: Light emitting diodes, Mid-IR, Superlattices, Gallium antimonide, Cameras, Black bodies, Capacitors, Metals, Body temperature, Switches

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Proceedings Article | 27 February 2006 Paper

Optical microsensor for continuous glucose measurements in interstitial fluid

Jonathon Olesberg, Chuanshun Cao, Jeffrey Yager, John Prineas, Chris Coretsopoulos, Mark Arnold, Linda Olafsen, Michael Santilli

Proceedings Volume 6094, 609403 (2006) https://doi.org/10.1117/12.646751

KEYWORDS: Glucose, Light emitting diodes, Sensors, Microfluidics, Blood, Microsensors, Detector arrays, Linear filtering, Gallium indium arsenide antimonide phosphide, Spectroscopy

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Proceedings Article | 23 February 2006 Paper

Processes limiting the performance of InAs/GaSb superlattice mid-infrared PIN mesa photodiodes

J. Prineas, Mikhail Maiorov, C. Cao, J. Olesberg, M. Flatté, M. Reddy, C. Coretsopoulos, Mark Itzler

Proceedings Volume 6119, 611904 (2006) https://doi.org/10.1117/12.647230

KEYWORDS: Gallium antimonide, Sensors, Photodiodes, Superlattices, Diodes, Diffusion, Indium arsenide, Stereolithography, Antimony, Etching

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Proceedings Article | 23 February 2006 Paper

PIN versus PN homojunctions in GaInAsSb 2.0-2.5 micron mesa photodiodes

J. Prineas, J. Yager, J. Olesberg, S. Seydmohamadi, C. Cao, M. Reddy, C. Coretsopoulos, J. Hicks, T. Boggess, M. Santilli, L. Olafsen

Proceedings Volume 6119, 611903 (2006) https://doi.org/10.1117/12.647109

KEYWORDS: Doping, Gallium antimonide, Gallium indium arsenide antimonide phosphide, Sensors, Antimony, Diodes, Electrons, Gallium, Photodiodes, Diffusion

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Proceedings Article | 7 April 2005 Paper

Quaternary GaInAsSb 2.0-2.5 micron back-illuminated focal plane array for blood glucose monitoring

John Prineas, Madhusudhana Reddy, Jonathon Olesberg, Chuanshun Cao, Saravanan Veerasamy, Michael Flatte, Edwin Koerperick, Thomas Boggess, Michael Santilli, Linda Olafsen

Proceedings Volume 5726, (2005) https://doi.org/10.1117/12.590820

KEYWORDS: Sensors, Gallium indium arsenide antimonide phosphide, Staring arrays, Gallium antimonide, Metals, Glucose, Absorption, Blood, Antimony, Etching

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Proceedings Article | 2 May 1997 Paper

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric Lindmark, John Prineas, Galina Khitrova, Hyatt Gibbs, Oleg Gusev, Boris Ber, Mikhail Bresler, Irina Yassievich, B. Zakharchenya, V. Masterov

Proceedings Volume 2996, (1997) https://doi.org/10.1117/12.271154

KEYWORDS: Erbium, Aluminum, Gallium arsenide, Gallium, Quantum wells, Ions, Diffusion, Semiconductors, Absorption, Modulation

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Showing 5 of 13 publications

Conference Committee Involvement (1)

Quantum Sensing and Nano Electronics and Photonics XIV

29 January 2017 | San Francisco, California, United States

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