Mr. Joseph Perez Profile

Joseph Perez

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Publications (8)

Proceedings Article | 7 March 2014 Paper

Antireflective surface patterned by rolling mask lithography

Oliver Seitz, Joseph Geddes, Mukti Aryal, Joseph Perez, Jonathan Wassei, Ian McMackin, Boris Kobrin

Proceedings Volume 8974, 89740V (2014) https://doi.org/10.1117/12.2037415

KEYWORDS: Photomasks, Lithography, Antireflective coatings, Nanostructures, Reflectivity, Glasses, Cones, Optical lithography, Ultraviolet radiation, Refraction

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Proceedings Article | 17 October 2008 Paper

Defect inspection of imprinted 32 nm half pitch patterns

Kosta Selinidis, Ecron Thompson, Ian McMackin, Joseph Perez, S. V. Sreenivasan, Douglas Resnick

Proceedings Volume 7122, 71222K (2008) https://doi.org/10.1117/12.801948

KEYWORDS: Photomasks, Inspection, Metals, Lithography, Semiconducting wafers, Scanning electron microscopy, Defect inspection, Etching, Image segmentation, Ultraviolet radiation

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Proceedings Article | 19 May 2008 Paper

32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas Resnick, Jeongho Yeo, Hoyeon Kim, Ben Eynon

Proceedings Volume 7028, 70280R (2008) https://doi.org/10.1117/12.793034

KEYWORDS: Semiconducting wafers, Line width roughness, Lithography, Etching, Photomasks, Critical dimension metrology, Beam shaping, Overlay metrology, Manufacturing, Line edge roughness

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Proceedings Article | 21 March 2008 Paper

High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning

I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, S. Sreenivassan

Proceedings Volume 6921, 69211L (2008) https://doi.org/10.1117/12.773970

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Lithography, Defect inspection, Etching, Optical lithography, Image processing, Manufacturing

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Proceedings Article | 16 November 2007 Paper

Defect reduction progress in step and flash imprint lithography

K. Selenidis, J. Maltabes, I. McMackin, J. Perez, W. Martin, D. Resnick, S. Sreenivasan

Proceedings Volume 6730, 67300F (2007) https://doi.org/10.1117/12.747565

KEYWORDS: Inspection, Semiconducting wafers, Lithography, Particles, Defect inspection, Ultraviolet radiation, Contamination, Ions, Image processing, Wafer inspection

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Proceedings Article | 21 March 2007 Paper

A study of imprint-specific defects in the step and flash imprint lithography process

J. Perez, K. Selinidis, S. Johnson, B. Fletcher, F. Xu, J. Maltabes, I. McMackin, D. Resnick, S. Sreenivasan

Proceedings Volume 6517, 65170L (2007) https://doi.org/10.1117/12.720673

KEYWORDS: Particles, Inspection, Lithography, Semiconducting wafers, Manufacturing, Photomasks, Optical lithography, Ultraviolet radiation, Defect detection, Silica

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Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in manufacturing. For successful manufacturing insertion of Step and Flash Imprint Lithography (S-FILTM) into a broad set of applications such as photonics, magnetic storage, and integrated circuits (ICs), the following practical process related challenges need to be addressed: (i) Printing sub-50nm structures with non-uniform pattern densities: (ii) Precise alignment and overlay with the ability to mix-and-match with photolithography; (iii) Availability of 1X templates; (iv) Achieving appropriate throughput for acceptable cost of ownership; and (v) Minimizing template and imprint process-induced defects to allow acceptable process yields. The last challenge - the ability to achieve low defect densities - is desirable for all applications. However, it is one of the biggest challenges for S-FIL to be accepted in IC fabrication. This article specifically focuses on this last challenge and presents the current status of defect reduction in S-FIL technology. The article starts out by providing a brief background of S-FIL technology, and by including a discussion of the overall status of S-FIL technology in Section 1. Next, an overview of the experiments performed including the defect inspection approaches used is provided in Section 2. Section 3 introduces the classes of defects that are relevant to the S-FIL process. It also provides recent defect data for each of these classes. Section 4 presents defect data gathered over the last three years and provides defect reduction trends over this period. Section 5 discusses the topic of template lifetime. Finally Section 6 provides some concluding remarks. The defect data presented here is based on a large number of short-loop experiments based on optical inspection of templates and wafers; these data are complemented by a modest number of high resolution e-beam inspections to provide insight into S-FIL specific defects at leading edge line widths.

Proceedings Article | 24 May 2004 Paper

Qualification of a low-cost high-quality reticle process for 90-nm contact layers

Kirk Strozewski, Joe Perez, Rusty Carter, Robert Kiefer, Curt Jackson, Susan MacDonald, Franklin Kalk

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536712

KEYWORDS: Photomasks, Reticles, Deep ultraviolet, Semiconducting wafers, Electron beam lithography, Mask making, Optical lithography, Semiconductors, Lithography, Inspection

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Proceedings Article | 2 June 2003 Paper

A new methodology to specify via and contact layer reticles for maximizing process latitude

Kirk Strozewski, Joe Perez, Anthony Vacca, Arthur Klaum, Keith Brankner

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485024

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Photomasks, Defect detection, Detection and tracking algorithms, Scanning electron microscopy, Wafer inspection, Optical lithography, Manufacturing

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Showing 5 of 8 publications

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