Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. “Smart” pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.
Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.
We designed and fabricated a dual-gate photosensitive TFT with active amorphous silicon thickness of 240nm and W/L ratio of 250μm/20μm by using a conventional six-mask photography microfabrication process. A single-pixel sensor was tested under different light conditions to mimic the real situation of X-ray exposure via the scintillator. The results demonstrate the capability of using dual-gate photosensitive TFT to acquire an X-ray image indirectly.
An interface has been developed to capture frames taken by X-ray array imagers up to 64×64 pixels. An application
specific integrated circuit (ASIC) designed solely for X-ray flat panel imaging readout circuitry, manufactured by
FLIR® called Indigo (also known as ISC9717), was used as part of charge-amplifier block. An Altera Cyclone II FPGA
is used to serve three purposes: Create pulses required for gate-driver block, Receive fast-stream data coming from the
Indigo chip, and Send data through RS-232 protocol over a serial cable to a personal computer.
Initial results for a 32×32 passive pixel sensor (PPS) with lateral amorphous Selenium metal-semiconductor-metal
(MSM) photodetector were presented in [1]. This work focuses more on methods used to improve the images obtained
from the array. Sharper images produced in sync with the light source are presented. In addition, insight into array
readout circuitry and capturing a frame from an array is discussed.
Crystalline Silicon Drift Detectors (SDDs) have been used for spectroscopy and particle physics applications since they
were first reported in the 1980s[1][2]. However, spatial resolution and a complex fabrication process are two major
hurdles that prevent SDDs from seeing widespread use in diffraction imaging and protein crystallography. To overcome
the issues with SDDs, we proposed a new type of silicon radiation detector integrated with a hydrogenated amorphous
silicon (a-Si:H) thin film transistor (TFT) readout technology intended for low X-ray energy detection with high spatial
resolution [3]. This work aims to extend our previous effort by examining in detail the operation of the proposed
integrated silicon TFT detector and to evaluate its X-ray sensitive performance via numerical analysis. In this research
we simulate a 250-μm-thick slightly doped p-type silicon substrate that also functions as an X-ray detector integrated
with a TFT readout having a channel length of 15 μm and a source/drain width of 15 μm. The simulations performed
focus on the potential distribution and band structure at the heterostructure interface between the TFT and the silicon
detector, and also on the current-voltage characteristics of the TFT due to X-ray exposure. Based on simulation results,
the expected lower and upper limits of performance will be presented. In particular, the feasibility of a single 6 keV
photon detection (arguably the minimum signal for a crystallography application) with such a device will be examined.
Stabilized amorphous selenium (a-Se) is widely used for Digital Imaging Systems for medical applications
due to its ability to be manufactured over large areas and because of its capability of relatively high charge
collection efficiency. In this work we have shown the behavior of a gated selenium detector. A three-terminal
photodetector is presented where the photoconductive layer is deposited on two coplanar electrodes on a
corning glass substrate. These two coplanar electrodes act as the source and the drain. A third electrode is
deposited on top of the photoconductor layer, which functions as the gate terminal of the device. This work
investigates the feasibility of controlling the charge collection of a selenium-based photo-detector by applying
voltage at the gate terminal. Three different types of structures of the three-terminal device are presented. In
order to investigate the charge collection behavior both the thickness of the bulk and the distance between two
electrodes have been varied. 20, 70 and 200 - micron device thicknesses were chosen while the electrode
spacing was varied from 6 to 10 micron. In order to compare between the different types of devices a fixed
level of electric field at 2.5 V/micron was applied across the bulk of the device. Result shows that the gate
voltage can control the current-voltage transfer characteristics and is dependent on the incident radiation.
One of the two main advantages of the gated photodetectors is that they can be manufactured with a simple
fabrication process. The other advantage is that the gate voltage can control charge collection, which has the
potential for eliminating the thin film transistor (TFT) switches in large-area direct or indirect X-ray imaging.
An array of ring voltage controlled oscillators (RVCO) aiming for photon quantum shot noise limited applications such
as protein crystallography is presented. The pixilated array consists of 24 by 21 RVCO pixels. RVCO pixel converts x-ray
generated input charge into an output oscillating frequency signal. This architecture can be used in both direct and
indirect detection schemes. In this paper the direct detection using a layer of amorphous selenium (a-Se) coupled with
the RVCO array is proposed. Theoretical and Experimental results for an in-house fabricated array of RVCOs in
amorphous silicon (a-Si) technology are presented. All different requirements for protein crystallography application are
listed in this paper and also the way this array addresses each of these requirements is discussed in details in this paper.
The off-panel readout circuitry, designed and implemented in-house, is given in this paper. The off-panel readout circuits
play an important role in the imaging applications using frequency based pixels. They have to be optimized in order to
reduce the fixed pattern noise and fringing effects in an imaging array containing many such RVCO pixels. Since the
frequency of oscillation of each of these pixels is in the range of 100 KHz, there is no antenna effect in the array.
Antenna effect becomes an important issue in other technologies such as poly silicon (poly-Si) and CMOS technologies
due to higher frequency of oscillation ranges (more than 100 MHz). Noise estimations, stability simulations and
measurements for some randomly selected pixels in the array for the fabricated RVCO array are presented. The reported
architecture is particularly promising for large area photon quantum shot noise applications, specifically protein
crystallography. However, this architecture can be used for low dose fluoroscopy, dental computed tomography (CT) and
other large area imaging applications limited by input referred electronic noise due to its very low input referred
electronic noise, high sensitivity and ease of fabrication in low cost a-Si technology.
Previously, metal-semiconductor-metal (MSM) lateral amorphous selenium (a-Se) detectors have been proposed for
indirect detector medical imaging applications. These detectors have raised interest due to their high-speed and
photogain. The gain measured from these devices was assumed to have been photoconductive gain; however the origin
of this gain was not fully understood. In addition, whether or not there was any presence of photocurrent multiplication
gain was not investigated. For integration-type applications photocurrent multiplication gain is desirable since the total
collected charge can be greater than the total number of absorbed photons. In order to fully appreciate the value of MSM
devices and their benefit for different applications, whether it is counting or integration applications, we need to
investigate the responsible mechanisms of the observed response. In this paper, we systematically study, through
experimental and theoretical means, the nature of the photoresponse and its responsible mechanisms. This study also
exposes the possible means to increase the performance of the device and under what conditions it will be most
beneficial.
Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended
for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect
conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated
vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily
integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel
and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.
An indirect digital x-ray detector is designed, fabricated, and tested. The detector integrates a high speed, low noise
CMOS substrate with two types of amorphous semiconductors on the circuit surface. Using a laterally oriented layout
a-Si:H or a-Se can be used to coat the CMOS circuit and provide high speed photoresponse to complement the high speed
circuits possible on CMOS technology. The circuit also aims to reduce the effect of slow carriers by integrated a Frisch
style grid on the photoconductive layer to screen for the slow carriers. Simulations show a uniform photoresponse for
photons absorbed on the top layer and an enhanced response when using a Frisch grid. EQE and noise results are
presented. Finally, possible applications and improvements to the area of indirect x-ray imaging that are capable of easily
being implemented on the substrate are suggested.
Silicon nanowire photodetectors were fabricated for large area digital imaging applications. An array of silicon
nanowires fabricated by plasma enhanced chemical vapor deposition (PECVD) was incorporated into lateral metalsemiconductor-
metal (MSM) photodetectors with 2 μm electrode spacing. A collection efficiency of up to 0.36 and responsivity of 0.136 was measured using an applied bias of -10V. The rise time in response to a blue LED light source was measured to be 35.2 μs.
Cadmium Zinc Telluride (CdZnTe or CZT) is a polycrystalline radiation detector that has been investigated over the
years for a variety of applications including Constellation X-ray space mission [1] and direct-conversion medical
imaging such as digital mammography [2]. Due to its high conversion gain and low electron-hole pair creation energy (~4.43 eV) [3], it has found use in high end, photon counting medical imaging applications including positron emission tomography (PET), computed tomography (CT) and single photon emission computed tomography (SPECT). However, its potential in low photon energy applications has not been fully explored. In this work, we explore the capacity of the
CZT material to count low photon energies (6 keV - 20 keV). These energies are of direct relevance to applications in
gamma ray breast brachytheraphy and mammography, X-ray protein crystallography, X-ray mammography and
mammography tomosynthesis. We also present a design that integrates the CZT direct conversion detector with an inhouse
fabricated amorphous silicon (a-Si:H) thin film transistor (TFT) passive pixel sensor (PPS) array. A CZT photoconductor (2 cm x 2 cm size, 5-mm-thick) prepared by the traveling heat method (THM) from RedlenTM is characterized. The current-voltage characteristics reveal a resistivity of 3.3 x 1011 Ω•cm and a steady state dark current in the range of nA. Photocurrent transients under different biases and illumination pulses are studied to investigate photogeneration and the charge trapping process. It is found that charge trapping plays a more significant role in transient behavior at low biases and low frequency.
In indirect digital x-ray detectors, photodetectors such as hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors
are used to convert the optical photons generated by the scintillating material to collectible electron-hole
pairs. A problem that arises during the collection of the charges is that the mobility and lifetime of both types
of carriers (electrons and holes) differ. In a-Si:H, the mobility of holes is much lower than that of electrons which
leads to depth-dependent signal variations and causes the charge collection time to be extensive. It has been
shown that the use of a Frisch grid can reduce the effect of the slower carriers in direct x-ray detectors. The
Frisch grid is essentially a conducting grid that shields carriers from the collecting electrode until they are in close
proximity. When the pixel electrodes are properly biased, the grid prevents the slow moving carriers (traveling
away from the collecting electrode) from being collected and puts more weight on the fast moving carriers, thus
allowing the total charge to be collected in less time.
In this paper we investigate the use of a Frisch grid in a-Si:H p-i-n photodetectors for indirect x-ray detectors.
Through simulations and theoretical analysis we determine the grid line sizes and positioning that will be most
effective for practical p-i-n photodetector designs. In addition we compare the results of photodetectors with
and without the grid to characterize the improvement achievable.
KEYWORDS: Photodetectors, Electrodes, Selenium, Sensors, Gamma ray imaging, Photomultipliers, Crystals, X-ray imaging, X-ray detectors, Signal to noise ratio
We propose a new indirect x-ray and gamma-ray detector which is comprised of a scintillating crystal coupled with an
amorphous selenium (a-Se) metal-semiconductor-metal (MSM) photodetector. A lateral Frisch grid is embedded
between the anode and the cathode to provide (1) unipolar charge sensing and (2) avalanche multiplication gain during
hole transport inside the detection region. Unipolar charge sensing operation reduces the persistent photocurrent lag and
increases the speed of the photodetector because most of the pixel charge is induced during carrier transport inside the detection region. Also, with proper biasing of the electrodes, we can create a high-field region between the lateral Frisch grid and the cathode for avalanche multiplication gain. Thus, we can convert the photodetector into a photomultiplier for higher signal-to-noise ratio and single photon-counting gamma-ray imaging. We present for the first time, a fabricated amorphous selenium lateral Frisch photodetector and present preliminary results of the measured photocurrents in response to a blue light emitting diode.
Thick amorphous selenium (a-Se) as an excellent photoconductor has been used in direct conversion X-ray imaging modalities such as mammography. However, due to substantial charge trapping, such detectors experience a long X-ray response time and as a result, suffer from a slow speed of operation. Therefore, its deployment to speed-required applications such as real-time fluoroscopy remains a challenge. In this work, we aim to investigate a lateral a-Se MSM
photodetector as an indirect conversion X-ray imager and its utilization in high speed, high energy medical applications.
The dark current density of the newly-fabricated detector is below 20 pA/mm2 for a 200 μm×50 μm pixel pitch at electric
field strengths ranging from 6 to 12 V/μm. The photoresponsivity reaches up to 2.3A/W towards blue wavelength of 468
nm at an electric field strength of 20 V/μm. Furthermore, the photocurrent has a fast speed of photoresponse, demonstrating rise time, fall time and time constant of 50 μs, 60 μs and 30 μs, respectively. Given that low dark current and high photoresponsivity this detector holds, coupled with fast photoresponse, it is believed that lateral a-Se MSM photodetector is promising for indirect conversion X-ray imager integrated with either CMOS or TFT arrays.
Amorphous selenium (a-Se) has been widely used as a direct conversion X-ray detection material. Vertical structures are
employed in most cases, where >200 μm thick a-Se photoconductor layer is inserted between top and bottom electrodes.
In this paper, we design a lateral metal-semiconductor-metal (MSM) structure in which a relatively thin layer of a-Se (~
8 μm) is coated on top of two lateral electrodes. The simulation results indicate that dark current of such a structure stays
extremely low level and external quantum efficiency (EQE) reaches over 30% with wavelengths ranging from 320 to
680 nm. We further fabricate the lateral MSM photoconductor by a two-mask photolithography process. The fabricated
photoconductor exhibits a dark current below 40 fA under electric fields ranging from 6 V/μm to 9 V/μm, a responsivity
up to 0.06 A/W, a measured EQE of 18% towards a short wavelength of 468 nm, and a high photoresponse speed at 500
Hz with a rise time of 250 μs, fall time of 350 μs, and time constant of 250 μs, respectively. Furthermore, an architecture
of indirect conversion X-ray imager is proposed with the use of such a lateral MSM structure and a blue-emitting
scintillator material atop.
Cerium oxides are of interest in many applications including optical coatings, solid-state fuel cells, and catalyst supports.
Due to excellent absorption in ultraviolet (UV), these materials are also widely used as UV blocking layers in medical
glassware and aerospace windows. In this paper, we present the fabrication and characterization of cerium oxide thin
films and their potential application in UV sensing. Cerium oxides were deposited by reactive oxygen ion beam assisted
e-beam evaporation. Comparing with the films obtained without ion assistance, oxygen plasma assisted deposition
enhances refractive index from ~ 1.8 to ~ 2.2 and improves electrical resistivity from ~ 106 Ωcm to ~ 1010 Ωcm. More
importantly, the film deposited with ion assistance shows stronger blue to UV absorption observed from the
transmittance spectra, which presumably is better for UV sensing. X-ray photoelectron spectroscopy and X-ray
diffraction measurements further suggest insights in stoichiometry and crystal structures. A concept-proving photodiode
was fabricated by employing a p+-Si/CeO2/n-In2O3 heterostructure. The current-voltage characteristics exhibit obvious diode-like behavior with a current rectification ratio of ~ 105. A low leakage current in a range of 10-10 ~ 10-8 A was
achieved at reverse biases of 0 to 10 V, respectively. The diode demonstrates high photocurrent gain of ~ 100 times and
fast photoresponse under a 405 nm UV exposure.
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