For establishing terahertz (THz) imaging with rapid scan, the influence of the response speed of a microelectromechanical system (MEMS) bolometer on the image quality have been evaluated and compared it with a pyroelectric detector (PED). The MEMS bolometer was operated with the frequency modulation detection mode in which the frequency shift due to the illumination of the laser light is tracked by a phase-locked loop (PLL) system. In the detection system using the PED, the laser light was chopped by an optical chopper and output signals were measured by a lock-in amplifier. Output signals from the detection systems were recorded by an analog-to-digital converter (ADC). An etched metal bookmark was used for the imaging object and imaging was made by a combination of continuous scans in the X direction and step scans in the Z direction. In imaging using the MEMS bolometer under a stage speed of 25 mm/s, the fine structures composed of very small holes much smaller than 1 mm were clearly observed. The images acquired by the MEMS bolometer were almost the same quality regardless of the stage speed, while in the case of the PED the images were distorted with increasing the stage speed. This is due to the bandwidth of the detectors. These results imply that the MEMS bolometer enables to acquire images with rapid scanning.
We have directly determined the spectral shape of the complex conductivities of Bloch oscillating electrons by using time-domain terahertz (THz)-electrooptic sampling technique and presented an experimental evidence for a dispersive Bloch gain in superlattices. This unique dispersive gain without population inversion arises from a non-classical nature of Bloch oscillations; that is, the phase of the Bloch oscillation (BO) is shifted by π/2 from that of the semi-classical charged harmonic oscillation when driven by the same ac field. By increasing the bias electric field, the gain bandwidth reached ~3 THz in our particular sample. It was also found that the dominant dephasing mechanism of the BOs is identified to be the interface roughness scattering (alloy disorder scattering) below (above) the critical bias electric field.
We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ~3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ~5.2 μm) at T=10 K and Vb=8 V.
We have investigated terahertz (THz) emission due to dynamical electron transport in wide miniband GaAs/Al0.2Ga0.7As superlattices. By noting that the time-domain THZ emission spectroscopy inherently measures the step-response of the electron system to the bias electric filed, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit of the THz gain for the samples studied here.
We systematically studied the Ga3d and A12p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset v at GaAs/AlAs interfaces is found to be independent of the crystallographic orientation and determined to be 0. 44 0. 05 eV. Furthermore we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by -0. 1 eV from their respective bulk values which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least 2 monolayers from the heterointerface.
Conference Committee Involvement (10)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2019
14 August 2019 | San Diego, California, United States
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz
22 August 2018 | San Diego, California, United States
Ultrafast Phenomena and Nanophotonics XXII
29 January 2018 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XXI
30 January 2017 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XX
15 February 2016 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XIX
8 February 2015 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XVIII
2 February 2014 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XVII
3 February 2013 | San Francisco, California, United States
Ultrafast Phenomena and Nanophotonics XVI
22 January 2012 | San Francisco, California, United States
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