Dr. Kim Dean Profile

Dr. Kim Dean

Process Development Engineer at CH2M Hill

SPIE Involvement:

Author

Publications (35)

Proceedings Article | 15 April 2008 Paper

Paper

Photons, electrons, and acid yields in EUV photoresists: a progress report

Robert Brainard, Elsayed Hassanein, Juntao Li, Piyush Pathak, Brad Thiel, Franco Cerrina, Richard Moore, Miguel Rodriguez, Boris Yakshinskiy, Elena Loginova, Theodore Madey, Richard Matyi, Matt Malloy, Andrew Rudack, Patrick Naulleau, Andrea Wüest, Kim Dean

Proceedings Volume 6923, 692325 (2008) https://doi.org/10.1117/12.773869

KEYWORDS: Electrons, Photons, Quantum efficiency, Extreme ultraviolet, Polymers, Monte Carlo methods, Extreme ultraviolet lithography, Oscillators, Line width roughness, Electronics

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Proceedings Article | 3 April 2008 Paper

Paper

Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool

Patrick Naulleau, Christopher Anderson, Jerrin Chiu, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Sungmin Huh, Gideon Jones, Bruno LaFontaine, Andy Ma, Dimitra Niakoula, Joo-on Park, Tom Wallow

Proceedings Volume 6921, 69213N (2008) https://doi.org/10.1117/12.773833

KEYWORDS: Line edge roughness, Monochromatic aberrations, Extreme ultraviolet, Photomasks, Printing, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Wafer-level optics

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Proceedings Article | 3 April 2008 Paper

Paper

Benchmarking of commercial EUVL resists at SEMATECH

Andy Ma, Joo-on Park, Kim Dean, Stefan Wurm, Patrick Naulleau

Proceedings Volume 6921, 69213O (2008) https://doi.org/10.1117/12.775037

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Scanning electron microscopy, Lithography, Real-time computing, Electroluminescence, Head-mounted displays, Photoresist processing

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Proceedings Article | 28 March 2008 Paper

Paper

Film quantum yields of EUV and ultra-high PAG photoresists

Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard

Proceedings Volume 6921, 69211I (2008) https://doi.org/10.1117/12.774099

KEYWORDS: Quantum efficiency, Extreme ultraviolet lithography, Photoresist materials, Extreme ultraviolet, X-rays, Absorbance, Photons, Coating, Reflectometry, Line edge roughness

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Proceedings Article | 28 March 2008 Paper

Paper

Extreme ultraviolet resist outgassing and its effect on nearby optics

Gregory Denbeaux, Rashi Garg, Chimaobi Mbanaso, Justin Waterman, Leonid Yankulin, Alin Antohe, Yu-Jen Fan, Warren Montgomery, Kim Dean, Kevin Orvek, Andrea Wüest, Yayi Wei, Frank Goodwin, Obert Wood, Chiew-Seng Koay, Eric Gullikson, Andy Aquila, Charles Tarrio, Steven Grantham, Saša Bajt

Proceedings Volume 6921, 69211G (2008) https://doi.org/10.1117/12.772670

KEYWORDS: Mirrors, Reflectivity, EUV optics, Molecules, Extreme ultraviolet lithography, Contamination, Spectroscopy, Extreme ultraviolet, Photoresist materials, Calibration

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Proceedings Article | 21 March 2008 Paper

Paper

Resolution, LER, and sensitivity limitations of photoresists

Gregg Gallatin, Patrick Naulleau, Dimitra Niakoula, Robert Brainard, Elsayed Hassanein, Richard Matyi, Jim Thackeray, Kathleen Spear, Kim Dean

Proceedings Volume 6921, 69211E (2008) https://doi.org/10.1117/12.772763

KEYWORDS: Line edge roughness, Data modeling, Photoresist materials, Extreme ultraviolet, Lithography, Image resolution, Scanning electron microscopy, Yield improvement, Photoresist developing, Photoresist processing

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Proceedings Article | 21 March 2008 Paper

Paper

Investigation of sensitivity of extreme ultraviolet resists to out-of-band radiation

Chimaobi Mbanaso, Gregory Denbeaux, Kim Dean, Robert Brainard, Seth Kruger, Elsayed Hassanein

Proceedings Volume 6921, 69213L (2008) https://doi.org/10.1117/12.772695

KEYWORDS: Extreme ultraviolet lithography, Absorption, Extreme ultraviolet, Photoresist materials, Lithography, Semiconducting wafers, Light, Absorbance, Image quality, Reflectivity

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Proceedings Article | 21 March 2008 Paper

Paper

Vacuum induced photoresist outgassing

Justin Waterman, Chimaobi Mbanaso, Gregory Denbeaux

Proceedings Volume 6921, 69213K (2008) https://doi.org/10.1117/12.772701

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Crystals, Lithography, Extreme ultraviolet, Contamination, Semiconducting wafers, EUV optics, Nitrogen, Molecules

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Proceedings Article | 3 May 2007 Paper

Paper

Quantitative measurement of EUV resist outgassing

Greg Denbeaux, Rashi Garg, Justin Waterman, Chimaobi Mbanaso, Jeroen Netten, Robert Brainard, Yu-Jen Fan, Leonid Yankulin, Alin Antohe, Kevin DeMarco, Molly Jaffe, Matthew Waldron, Kim Dean

Proceedings Volume 6533, 653318 (2007) https://doi.org/10.1117/12.737192

KEYWORDS: Spectroscopy, Extreme ultraviolet lithography, Molecules, Extreme ultraviolet, Optical filters, Xenon, Molecular spectroscopy, Calibration, Photoresist materials, Mirrors

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Proceedings Article | 4 April 2007 Paper

Paper

An analysis of EUV-resist outgassing measurements

Kim Dean, Iwao Nishiyama, Hiroaki Oizumi, Anthony Keen, Heidi Cao, Wang Yueh, Takeo Watanabe, Paolo Lacovig, Luca Rumiz, Gregory Denbeaux, Julia Simon

Proceedings Volume 6519, 65191P (2007) https://doi.org/10.1117/12.712379

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Contamination, Mass spectrometry, Molecules, Mirrors, Analytical research, Calibration, EUV optics

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Proceedings Article | 21 March 2007 Paper

Paper

Characterization of low-order aberrations in the SEMATECH Albany MET tool

Patrick Naulleau, Justin Waterman, Kim Dean

Proceedings Volume 6517, 65172Q (2007) https://doi.org/10.1117/12.713448

KEYWORDS: Monochromatic aberrations, Spherical lenses, Lithography, Interferometry, Extreme ultraviolet, Optical alignment, Printing, Extreme ultraviolet lithography, EUV optics, Optics manufacturing

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Proceedings Article | 15 March 2007 Paper

Paper

Recent results from the Berkeley 0.3-NA EUV microfield exposure tool

Patrick Naulleau, Chris Anderson, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Bruno La Fontaine, Tom Wallow

Proceedings Volume 6517, 65170V (2007) https://doi.org/10.1117/12.713440

KEYWORDS: Monochromatic aberrations, Line edge roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Fiber optic illuminators, Lithography, Line width roughness, Eye, Critical dimension metrology, Photomasks

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Proceedings Article | 29 March 2006 Paper

Paper

Effects of material design on extreme ultraviolet (EUV) resist outgassing

Kim Dean, Kenneth Gonsalves, Muthiah Thiyagarajan

Proceedings Volume 6153, 61531E (2006) https://doi.org/10.1117/12.657163

KEYWORDS: Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Contamination, Diffusion, EUV optics, Calibration, Line width roughness, Carbon

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Proceedings Article | 24 March 2006 Paper

Paper

Lithographic characterization of low-order aberrations in a 0.3-NA EUV microfield exposure tool

Patrick Naulleau, Jason Cain, Kim Dean, Kenneth Goldberg

Proceedings Volume 6151, 61512Z (2006) https://doi.org/10.1117/12.656990

KEYWORDS: Monochromatic aberrations, Lithography, Interferometry, Spherical lenses, Extreme ultraviolet lithography, Extreme ultraviolet, Diffraction, EUV optics, Photomasks, Optical alignment

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Proceedings Article | 24 March 2006 Paper

Paper

The EUV resist test center at Sematech-North

Klaus Lowack, Andy Rudack, Kim Dean, Matt Malloy, Mike Lercel

Proceedings Volume 6151, 61512U (2006) https://doi.org/10.1117/12.657683

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Real-time computing, Photoresist materials, Lithography, Photoresist developing, Contamination, Line edge roughness, Reticles

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Proceedings Article | 24 March 2006 Paper

Paper

Aerial-image modeling for the extreme ultraviolet microfield exposure tool at SEMATECH North

Patrick Naulleau, Kim Dean, Klaus Lowack

Proceedings Volume 6151, 61512T (2006) https://doi.org/10.1117/12.657001

KEYWORDS: Extreme ultraviolet, Data modeling, Extreme ultraviolet lithography, Optics manufacturing, Contrast transfer function, Wavefronts, Photomasks, Electroluminescence, Lithography, Cadmium

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Proceedings Article | 23 March 2006 Paper

Paper

Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists

Patrick Naulleau, Clemens Rammeloo, Jason Cain, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Bruno La Fontaine, Adam Pawloski, Carl Larson, Greg Wallraff

Proceedings Volume 6151, 61510Y (2006) https://doi.org/10.1117/12.657005

KEYWORDS: Extreme ultraviolet, Contrast transfer function, Critical dimension metrology, Extreme ultraviolet lithography, Lithography, Printing, Line edge roughness, Fiber optic illuminators, Wavefronts, Interferometry

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Proceedings Article | 6 May 2005 Paper

Paper

EUV microexposures at the ALS using the 0.3-NA MET projection optics

Patrick Naulleau, Kenneth Goldberg, Erik Anderson, Jason Cain, Paul Denham, Brian Hoef, Keith Jackson, Anne-Sophie Morlens, Seno Rekawa, Kim Dean

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600388

KEYWORDS: Printing, Fiber optic illuminators, Line edge roughness, Extreme ultraviolet, Semiconducting wafers, Photomasks, Extreme ultraviolet lithography, Reticles, Projection systems, Wafer-level optics

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Proceedings Article | 4 May 2005 Paper

Paper

Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.602087

KEYWORDS: Polymers, Extreme ultraviolet lithography, Lithography, Polymerization, Chemically amplified resists, Resistance, Photomicroscopy, Scanning electron microscopy, Electron beam lithography, Polymethylmethacrylate

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Proceedings Article | 4 May 2005 Paper

Paper

Material design and evaluation of nanocomposite resist for next generation lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean, Patricia Santiago, L. Rendon, Augustin Jeyakumar, Clifford Henderson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.597308

KEYWORDS: Etching, Polymers, Plasma etching, Nanocomposites, Lithography, Plasma, Reactive ion etching, Electron beam lithography, Resistance, Silicon films

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SPIE Journal Paper | 1 April 2005

New resists for nanometer scale patterning by extreme ultraviolet lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean

JM3, Vol. 4, Issue 02, 029701, (April 2005) https://doi.org/10.1117/12.10.1117/1.1898604

KEYWORDS: Polymers, Extreme ultraviolet lithography, Lithography, Optical lithography, Extreme ultraviolet, Photoresist materials, Photomicroscopy, Etching, Resistance, Nanotechnology

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Proceedings Article | 14 May 2004 Paper

Paper

Effects of airborne molecular contamination on 157nm resists: AMC friend or foe?

Jeff Meute, Georgia Rich, Karen Turnquest, Kim Dean, Shashikant Patel, Victoria Graffenberg, Michael Rodriguez

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537652

KEYWORDS: Semiconducting wafers, Lithography, Contamination, Photoresist processing, Real-time computing, Photoresist materials, Statistical analysis, Environmental sensing, Spectroscopy, Scanning electron microscopy

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Proceedings Article | 17 December 2003 Paper

Paper

157-nm alternating phase-shifting mask design and high-NA images

Yung-Tin Chen, Jeff Meute, Kim Dean, Peter Brooker

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518310

KEYWORDS: Photomasks, Etching, Phase shifting, Scanning electron microscopy, Neodymium, Semiconducting wafers, Critical dimension metrology, Phase shifts, Polarization, Reticles

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Proceedings Article | 26 June 2003 Paper

Paper

Image performance and mask characterization of 157-nm alternating phase-shifting mask

Yung-Tin Chen, Jeff Meute, Kim Dean, David Stark, Christof Schilz, Wolfgang Dettmann, Roderick Koehle, Bettina Schiessl, Wolfgang Degel

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485519

KEYWORDS: Photomasks, Etching, Critical dimension metrology, Semiconducting wafers, Phase shifts, Scanning electron microscopy, Phase measurement, Image processing, Image analysis, Monochromatic aberrations

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Proceedings Article | 12 June 2003 Paper

Paper

Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography

Evangelia Tegou, Vassilios Bellas, Evangelos Gogolides, Panagiotis Argitis, Kim Dean, David Eon, Gilles Cartry, Christophe Cardinaud

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485083

KEYWORDS: Polymers, Etching, Chemical analysis, Lithography, Silicon, Resistance, Oxygen, Molecules, Plasmas, Photoresist processing

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Proceedings Article | 30 July 2002 Paper

Paper

Contamination and degradation of 157-nm stepper optical components: field experience at International SEMATECH

Jeff Meute, Georgia Rich, Stefan Hien, Kim Dean, Carolyn Gondran, Julian Cashmore, Dominic Ashworth, James Webb, Lisa Rich, Paul Dewa

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474621

KEYWORDS: Fiber optic illuminators, Contamination, Optical components, Objectives, Semiconducting wafers, Mirrors, Reticles, Lithography, Wafer-level optics, Failure analysis

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Proceedings Article | 30 July 2002 Paper

Paper

Aberration determination in early 157-nm exposure system

Bruce Smith, Will Conley, Cesar Garza, Jeff Meute, Daniel Miller, Georgia Rich, Victoria Graffenberg, Kim Dean, Shashikant Patel, Arnie Ford, James Foster, Marco Moers, Kevin Cummings, James Webb, Paul Dewa, Azeddine Zerrade, Susan MacDonald, Greg Hughes, Peter Dirksen

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474551

KEYWORDS: Photomasks, Monochromatic aberrations, Scanning electron microscopy, Image processing, Lithography, Manufacturing, Imaging systems, Wavefronts, Zernike polynomials, Edge detection

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Proceedings Article | 24 July 2002 Paper

Paper

Parameter extraction for 157-nm photoresists

Joseph Bendik, Will Conley, Daniel Miller, Paul Zimmerman, Kim Dean, John Petersen, Jeff Byers

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474174

KEYWORDS: Lithography, Photoresist materials, Data modeling, Absorption, Systems modeling, FT-IR spectroscopy, Metrology, Transparency, Scanning electron microscopy, Opacity

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Proceedings Article | 24 August 2001 Paper

Paper

Perfect photoresist for 157nm imaging

Will Conley, Jeff Byers, Kim Dean, Steven Hansen, Jo Finders, Stephan Sinkwitz

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436864

KEYWORDS: Photoresist materials, Absorbance, Data modeling, Manufacturing, Photoresist developing, Imaging devices, Diffusion, Reticles, Deep ultraviolet, Calibration

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Chemically amplified photoresists where first created for broadband deep UV imaging, then used for monochromatic KrF excimer laser light, then ArF and now F₂ for 157nm imaging. With this experience we may able to build The Perfect Photoresist. This may sound ridiculous, however, take a good look at the SIA roadmap, and the timing in which 157nm imaging will be needed. There are numerous arguments regarding 157nm insertion, some say 100nm and others say the 70nm node; regardless of the timing it is approaching quickly. The time allowed to develop such technology is decreasing. If we recall back to the early 1980's when deep UV (248nm) materials development started, it has taken nearly 10-12 years to perfect them. ArF materials, whose development began in the early 90's, will take approximately 8 years before reaching manufacturing (and there is still great improvement needed). Now let's focus on the timeline for 157nm resist: its development began in 1999 and it must be ready for early manufacturing by the end of 2004. Most, if not all, photoresist companies have plans to develop photoresist technology for 157nm. Many of these solutions are based on existing KrF or ArF materials technology with modifications to meet optical density requirements for 157nm. Considering the implementation node for this technology (let's assume 70nm), films thickness' will most likely not exceed 250nm and in most cases range from 150nm to 200nm. These films thicknesses bring on new and unique challenges, however, they can be managed. The authors will take into consideration three different types of device level imaging: gate, trench and contact holes for single layer imaging. Through the use of designed simulation experiments and existing data we will construct different photoresist models to meet the requirements for these device levels. We'll plan to test whether resist models calibrated at 248nm can be extrapolated to 157nm. The authors will also explore the question of optical density (B parameter), chemical contrast, exposed & unexposed film dissolution along with acid diffusion to provide the insight that can aid in developing materials for the photoresists composition. We will investigate the use of binary and attenuated reticles with various illumination conditions over several substrates, to provide insight into designing The Perfect Photoresist for 157nm Imaging.

Proceedings Article | 24 August 2001 Paper

Paper

Photoresist outgassing at 157 nm exposure

Stefan Hien, Steve Angood, Dominic Ashworth, Steve Basset, Theodore Bloomstein, Kim Dean, Roderick Kunz, Daniel Miller, Shashikant Patel, Georgia Rich

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436834

KEYWORDS: Fluorine, Polymers, Contamination, Oxygen, Photoresist materials, Plasma, Absorption, Silicon, Vacuum ultraviolet, Molecules

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Contamination of optical elements during photoresist exposure is a serious issue in optical lithography. The outgassing of photoresist has been identified as a problem at 248nm and 193nm in production because the organic films that can be formed on an exposure lens can cause transmission loss and sever image distortion. At these exposure energies, the excitation of the photo acid generator, formation of acid, and cleavage of the protecting group are highly selective processes. At 157nm, the exposure energy is much higher (7.9 eV compared to 6.4 eV at 193nm) and it is known from laser ablation experiments that direct laser cleavage of sigma bonds occurs. The fragments formed during this irradiation can be considered as effective laser deposition precursors even in the mid ppb level. In this study, methods to quantify photoresist outgassing at 157 nm are discussed. Three criteria have been set up at International SEMATECH to protect lens contamination and to determine the severity of photoresist outgassing. First, we measured film thickness loss as a function of exposure dose for a variety of materials. In a second test we studied the molecular composition of the outgassing fragments with an exposure chamber coupled to a gas chromatograph and a mass spectrometer detector. Our third method was a deposition test of outgassing vapors on a CaF₂ proof plate followed by analysis using VUV and X-ray photoelectron spectroscopies (XPS). With this technique we found deposits for many different resists. Our main focus is on F- and Si- containing resists. Both material classes form deposits especially if these atoms are bound to the polymer side chains. Whereas the F-containing films can be cleaned off under 157nm irradiation, cleaning of Si-containing films mainly produces SiO₂. Our cleaning studies of plasma deposited F-containing organic films on SiO₂ did not indicate damage of this surface by the possible formation of HF. Despite that we strongly recommend engineering measures to overcome contamination by resist, such as optimizing the purge flow between the final lens element and wafer surface or utilization of a lens pellicle.

Proceedings Article | 23 June 2000 Paper

Paper

Environmental stability of chemically amplified resists: proposing an industry standard methodology for testing

Kim Dean, Oleg Kishkovich

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388295

KEYWORDS: Semiconducting wafers, Humidity, Contamination, Cadmium, Wafer testing, Chemically amplified resists, Lithography, Critical dimension metrology, Photoresist materials, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Paper

193-nm single-layer process for 150-nm technology generation and below

Gilles Amblard, Peter Zandbergen, Martin McCallum, Alan Stephen, Jeff Byers, Kim Dean, Jeff Meute, Carla Nelson-Thomas

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350270

KEYWORDS: Photoresist processing, Reflectivity, Lithography, Silicon, Semiconducting wafers, 193nm lithography, Photomasks, Binary data, Phase shifts, Organic materials

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Proceedings Article | 11 June 1999 Paper

Paper

Antireflective coating strategies for 193-nm lithography

Alan Stephen, Kim Dean, Jeff Byers

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350184

KEYWORDS: Oxides, Reflectivity, Semiconducting wafers, Antireflective coatings, 193nm lithography, Lithography, Chemical vapor deposition, Nitrogen, Optical properties, Scanning electron microscopy

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Proceedings Article | 29 June 1998 Paper

Paper

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Thomas Steinhaeusler, Allen Gabor, Daniela White, Andrew Blakeney, David Stark, Daniel Miller, Georgia Rich, Victoria Graffenberg, Kim Dean

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312373

KEYWORDS: Etching, Plasma etching, Resistance, Lithography, Silicon, Photoresist processing, Plasma, Standards development, Image resolution, Oxides

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Proceedings Article | 9 June 1995 Paper

Paper

Investigation of deep-ultraviolet photoresists on TiN substrates

Kim Dean, Ronald Carpio, Georgia Rich

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210358

KEYWORDS: Tin, Titanium, Deep ultraviolet, Reflectivity, Photoresist materials, Photoresist processing, Silicon, Oxides, Aluminum, Interfaces

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Showing 5 of 35 publications

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