Mr. Kiyoshi Fujii Profile

Kiyoshi Fujii

Group Leader at Semiconductor Leading Edge Technologies Inc

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Author

Publications (29)

Proceedings Article | 12 April 2013 Paper

Flare management for 40-nm logic devices

Yuusuke Tanaka, Takao Tamura, Masashi Fujimoto, Kyoichi Tsubata, Naka Onoda, Kiyoshi Fujii

Proceedings Volume 8683, 86832E (2013) https://doi.org/10.1117/12.2010082

KEYWORDS: Logic devices, Point spread functions, Critical dimension metrology, Error analysis, Cadmium, Photomasks, Semiconductors, Scanners, Scattering, Electronics

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Proceedings Article | 11 April 2006 Paper

Analysis of 193nm immersion specific defects

Akihiko Otoguro, Jeung-Woo Lee, Toshiro Itani, Kiyoshi Fujii, Tomohiro Funakoshi, Tsunehiro Sakai, Kenji Watanabe, Mikio Arakawa, Hitoshi Nakano, Masamichi Kobayashi

Proceedings Volume 6153, 61531P (2006) https://doi.org/10.1117/12.656086

KEYWORDS: Photoresist processing, Bridges, Semiconducting wafers, Scanning electron microscopy, Photography, Immersion lithography, Thin film coatings, Lithography, Crystals, Quartz

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Proceedings Article | 21 March 2006 Paper

Sub-40nm pattern fabrication in 157nm interferometric immersion lithography

Takuya Hagiwara, Shou Tsuji, Kiyoshi Fujii, Masato Moriya, Osamu Wakabayashi, Akira Sumitani, Yusuke Saito, Kazuhiko Maeda

Proceedings Volume 6154, 61544H (2006) https://doi.org/10.1117/12.656981

KEYWORDS: Refractive index, Liquids, Fluorine, Chemical species, Molecules, Interferometers, Prisms, Immersion lithography, Semiconducting wafers, Transparency

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Proceedings Article | 21 March 2006 Paper

Novel high refractive index fluids for 193nm immersion lithography

Julius Santillan, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Akifumi Kagayama, Takashi Nakano, Norio Nakayama, Hiroaki Tamatani, Shin Fukuda

Proceedings Volume 6154, 61544Q (2006) https://doi.org/10.1117/12.656089

KEYWORDS: Photoresist materials, Refractive index, Immersion lithography, Absorption, Neodymium, Microfluidics, Fluid dynamics, Interferometry, Lithography, Water

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Proceedings Article | 21 March 2006 Paper

Full-field exposure tools for ArF immersion lithography

Jeung-woo Lee, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Ken-ichi Shiraishi, Tomoharu Fujiwara, Yuki Ishii

Proceedings Volume 6154, 61544I (2006) https://doi.org/10.1117/12.656130

KEYWORDS: Semiconducting wafers, Resonance energy transfer, Standards development, Immersion lithography, Water, Lithography, Optical lithography, Photoresist processing, Photomasks, Microfluidics

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Proceedings Article | 12 May 2005 Paper

Fabrication of sub 45 nm random patterns through centerline phase-shifting mask (CL-PSM)

Jeung-woo Lee, Seiji Matsuura, Kiyoshi Fujii

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599309

KEYWORDS: Phase shifts, Photomasks, Nanoimprint lithography, Chromium, Lithography, Resolution enhancement technologies, Binary data, Optical lithography, Logic, Fluorine

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Proceedings Article | 12 May 2005 Paper

Development and evaluation of an F2 laser for immersion interference lithography at 157nm

Yasuo Itakura, Youichi Kawasa, Osamu Wakabayashi, Masato Moriya, Shinji Nagai, Akira Sumitani, Takuya Hagiwara, Toshiyuki Ishimaru, Shou Tsuji, Kiyoshi Fujii, Wataru Wakamiya

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599512

KEYWORDS: Polarization, Interferometers, Lithography, Fluorine, Spatial coherence, Prisms, Immersion lithography, Fringe analysis, Laser resonators, Visibility

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Proceedings Article | 12 May 2005 Paper

Current status of 157-nm lithography using a full-field scanner

Toshiyuki Ishimaru, Seiji Matsuura, Miyoshi Seki, Kiyoshi Fujii, Ryo Koizumi, Yuji Hakataya, Akihiko Moriya

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599300

KEYWORDS: Scanners, Etching, Lithography, Line width roughness, Optical alignment, Semiconducting wafers, Photoresist processing, Scanning electron microscopy, Lithographic illumination, Light sources

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Proceedings Article | 12 May 2005 Paper

Status of 157 nm lithography and prospects for immersion

Kiyoshi Fujii, Takuya Hagiwara, Seiji Matsuura, Toshiyuki Ishimaru, Yoshihisa Matsubara, Wataru Wakamiya

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599455

KEYWORDS: Lithography, Immersion lithography, Refractive index, Absorption, Scanners, Lithographic illumination, Polarization, Optical lithography, Photomasks, Scanning electron microscopy

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Proceedings Article | 12 May 2005 Paper

Liquid immersion lithography at 157 nm

Takuya Hagiwara, Toshiyuki Ishimaru, Shou Tsuji, Kiyoshi Fujii, Yasuo Itakura, Osamu Wakabayashi, Youichi Kawasa, Keiji Egawa, Ikuo Uchino, Akira Sumitani, Yusuke Saito, Kazuhiko Maeda

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599379

KEYWORDS: Absorption, Transparency, Interferometry, Immersion lithography, Chemical species, Microfluidics, Refractive index, Fluorine, Semiconducting wafers, Glasses

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Proceedings Article | 4 May 2005 Paper

Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

T. Yamashita, T. Ishikawa, T. Yoshida, T. Hayamai, Takayuki Araki, H. Aoyama, T. Hagiwara, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599523

KEYWORDS: Polymers, Fluorine, Lithography, Immersion lithography, Transparency, Standards development, Quartz, Crystals, Photomasks, Polymerization

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Proceedings Article | 4 May 2005 Paper

A new monocyclic fluoropolymer for 157-nm and 193-nm photoresists

Takashi Sasaki, Yoko Takebe, Osamu Yokokoji, Akihiko Otoguro, Kiyoshi Fujii

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599162

KEYWORDS: Polymers, Resistance, Transparency, Lithography, Fluorine, Polymerization, Etching, Virtual colonoscopy, Absorption, Photoresist materials

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Proceedings Article | 20 August 2004 Paper

Optimization of the chromium-shielding attenuated phase shift mask for 157-nm lithography

Eiji Kurose, Kunio Watanabe, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557753

KEYWORDS: Photomasks, Binary data, Phase shifts, Lithography, Nanoimprint lithography, Transmittance, Optical lithography, Chromium, Scanning electron microscopy, Resolution enhancement technologies

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Proceedings Article | 28 May 2004 Paper

157-nm chromeless phase lithography for 45-nm SRAM gate

Toshifumi Suganaga, Kunio Watanabe, Seiji Matsuura, Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534897

KEYWORDS: Nanoimprint lithography, Lithography, Photomasks, Line edge roughness, Lithographic illumination, Resolution enhancement technologies, Photoresist processing, Transmittance, Semiconductors, Fabrication

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Proceedings Article | 28 May 2004 Paper

Evaluation systems of F2 laser lithography materials

Yasuo Itakura, Youichi Kawasa, Keiji Egawa, Akira Sumitani, Hironao Sasaki, Iwao Higasikawa, Shigeo Irie, Kiyoshi Fujii, Toshiro Itani, Hitoshi Nakano, Hideo Hata

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534839

KEYWORDS: Transmittance, Pellicles, Photomasks, Fluorine, Lithography, Laser irradiation, Semiconducting wafers, Vacuum ultraviolet, Contamination, Laser development

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Proceedings Article | 28 May 2004 Paper

157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

Toshifumi Suganaga, Jeung-Woo Lee, Eiji Kurose, Toshiyuki Ishimaru, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Julian Cashmore, Malcolm Gower

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535119

KEYWORDS: Nanoimprint lithography, Line edge roughness, Lithography, Photomasks, Tolerancing, Phase shifting, Binary data, Objectives, Resolution enhancement technologies, Lithographic illumination

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Proceedings Article | 14 May 2004 Paper

Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)

Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533907

KEYWORDS: Polymers, Dry etching, Resistance, Etching, Chemical species, Transparency, Fluorine, Plasma etching, Lithography, Absorption

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Proceedings Article | 14 May 2004 Paper

A new monocyclic fluropolymer structure for 157-nm photoresists

Yoko Takebe, Masataka Eda, Shinji Okada, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Kiyoshi Fujii, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533932

KEYWORDS: Polymers, Transparency, Etching, Resistance, Polymerization, Fluorine, Photoresist materials, Lithography, Chemical species, Microelectromechanical systems

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Proceedings Article | 14 May 2004 Paper

The dissolution behavior of tetrafluoroethylene-based fluoropolymers for 157-nm resist materials

Takuji Ishikawa, Tetsuhiro Kodani, Meiten Koh, Tsukasa Moriya, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Minoru Toriumi, Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533901

KEYWORDS: Polymers, Transparency, Lithography, Fluorine, Absorbance, Photomasks, Standards development, Phase shifts, Polymer thin films, Absorption

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Proceedings Article | 14 May 2004 Paper

157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, Osamu Yokokoji

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535013

KEYWORDS: Polymers, Absorption, Standards development, Etching, Resistance, Lithography, Fluorine, Dry etching, Photomasks, Transparency

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Proceedings Article | 14 May 2004 Paper

Evaluation of outgassing from a fluorinated resist for 157-nm lithography

Shigeo Irie, Kiyoshi Fujii, Yasuo Itakura, Youichi Kawasa , Keiji Egawa, Ikuo Uchino, Akira Sumitani, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535110

KEYWORDS: Absorption, Transmittance, Ions, Polymers, Transmission electron microscopy, Lithography, Natural surfaces, Optical components, Contamination, Chemical analysis

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We have evaluated the outgassing products and the in-situ transmittance of a contaminated CaF₂ substrate for monocyclic fluoropolymers with four protecting groups: methoxymethyl (MOM), tert-butoxycarbonyl (t-BOC), menthoxymethyl (MM), and 2-cyclohexylcyclohexyloxymethyl (CCOM). We have also evaluated the same type of fluoropolymer with seven kinds of photo-acid generators (PAGs) added to a base fluoropolymer solution. We found little correlation between the total amount of outgassing from the polymer and the decreasing rate of the CaF₂ substrate transmittance caused by outgassing adhesion. Although the MOM protecting group generated the largest amount of outgassing products, the most substantial decrease in the transmittance was observed for the t-BOC protecting group. Also, the outgassing products due to use of a PAG did not greatly reduce the absorption coefficient of a CaF₂ substrate regardless of the kind of PAG. Therefore, the absorption coefficient of the outgassing-contaminated CaF₂ substrate appears to be more sensitive to the type of protecting group, especially the t-BOC protecting group including a t-butyl unit, rather than the type of fluoropolymer or PAG. We analyzed the substrate surface contaminant due to the t-butyl unit by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and time-of-flight secondary ion mass spectrometry (TOF-SIMS), and found that increasing amounts of organic compounds, containing mainly C- and H-atoms, were adhered to and deposited on the substrate surface with an increasing irradiation dose. We speculate that the contaminants on a CaF₂ surface with or without an anti-reflective coating were formed not only through mere physical adsorption, but also through certain chemical combinations. We conclude that in terms of material design of the fluoropolymer resist for 157-nm lithography, we need to pay attention to the protecting group of polymers, especially the t-BOC or t-butyl protecting group, which generates isobutene product during 157-nm irradiation.

Proceedings Article | 14 May 2004 Paper

157-nm resist assessment by a full-field scanner

Akihiko Otoguro, Shigeo Irie, Toshiyuki Ishimaru, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535092

KEYWORDS: Line edge roughness, Critical dimension metrology, Polymers, Lithography, Scanning electron microscopy, Semiconducting wafers, Scanners, Absorption, Dry etching, Etching

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Proceedings Article | 14 May 2004 Paper

Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Takuji Ishikawa, Meiten Koh, Tetsuhiro Kodani, Tsukasa Moriya, Tsuneo Yamashita, Takayuki Araki, Minoru Toriumi, Hirokazu Aoyama

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535098

KEYWORDS: Polymers, Absorption, Lithography, Resistance, Absorbance, Line edge roughness, Fluorine, Industrial chemicals, Transparency, Chlorine

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Proceedings Article | 14 May 2004 Paper

Airborne contamination control for 157-nm lithography: influence of ammonia contamination

Hidefumi Matsui, Junichi Kitano, Kosuke Yoshihara, Etsurou Kawaguchi, Takamitsu Furukawa, Kentaro Matsunaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534975

KEYWORDS: Contamination, Lithography, Polymers, Coating, Transmittance, Adsorption, Contamination control, Critical dimension metrology, Polymer thin films, Spectroscopy

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Proceedings Article | 14 May 2004 Paper

Advances in resist pattern transfer process using 157-nm lithography

Takamitsu Furukawa, Takuya Hagiwara, Etsurou Kawaguchi, Kentaro Matsunaga, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535177

KEYWORDS: Reactive ion etching, Lithography, Photomasks, Photoresist processing, Etching, Binary data, Semiconductors, Optical lithography, Lithographic illumination, Line edge roughness

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Proceedings Article | 5 September 2001 Paper

Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns

Yuusuke Tanaka, Kiyoshi Fujii, Kenichiro Suzuki, Toshiyuki Iwamoto, Shinji Tsuboi, Yasuji Matsui

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438365

KEYWORDS: Photomasks, X-rays, Distortion, Etching, Silicon carbide, Critical dimension metrology, X-ray imaging, X-ray lithography, Control systems, Electron beams

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Proceedings Article | 20 August 2001 Paper

Production x-ray lithography stepper for 100-nm device fabrication

Xuan Li, Tsutomu Miyatake, Sayumi Hirose, Masaoki Hirose, Kiyoshi Fujii, Katsumi Suzuki

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436646

KEYWORDS: Semiconducting wafers, Photomasks, Optical alignment, X-rays, Sensors, X-ray lithography, Overlay metrology, Silicon carbide, Lithography, Light scattering

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Proceedings Article | 20 August 2001 Paper

Overlay and critical dimension control in 100-nm ULSI processes using TaBN x-ray masks and the XRA x-ray stepper

Kiyoshi Fujii, Yuusuke Tanaka, Toshiyuki Iwamoto, Shinji Tsuboi, Hiroaki Sumitani, Takao Taguchi, Katsumi Suzuki, Yasuji Matsui

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436645

KEYWORDS: Photomasks, Critical dimension metrology, X-rays, Overlay metrology, Semiconducting wafers, Distortion, Silicon carbide, X-ray lithography, Optical alignment, Silicon

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Proceedings Article | 28 July 1997 Paper

Analysis of x-ray mask distortion

Yuusuke Tanaka, Takuya Yoshihara, Shinji Tsuboi, Kiyoshi Fujii, Katsumi Suzuki

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277274

KEYWORDS: Distortion, Photomasks, Silicon carbide, X-rays, Semiconducting wafers, Silicon, Tantalum, X-ray lithography, Etching, Data analysis

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Showing 5 of 29 publications

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