Next-generation BSI CMOS Imager Sensors are strongly driven by novel applications in depth sensing, mainly operating in the NIR (940nm) spectrum. As a result, the need for higher pixel sensitivity while shrinking pixel pitch is more present than ever. In this work, we present a new technology platform based on ad-hoc nano diffractor geometries, integrated in the Back Side of BSI CIS that allow to drastically improve the QE of the sensor for pitches varying from 10 μm down to 2.2 μm, co-optimized for both optical and electronic pixel performance.
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