KEYWORDS: Solar cells, Photovoltaics, Solar energy, Scattering, Virtual point source, Satellites, Quantum wells, Phonons, Indium gallium arsenide, Energy efficiency
Hot Carrier Solar Cells (HCSCs) are a proposed next-generation photovoltaic technology for overcoming the single-gap efficiency limit. Here, our latest work in developing protocols for effective hot carrier extraction and field aided scattering within the framework of valley photovoltaics (VP) will be presented. A study of various absorber/selective barrier material combinations provides insight into current bottlenecks towards the realization of a VP HCSC, and how these might be circumvented using several complementary experimental techniques.
This work describes the relative contribution of intervalley scattering and phonon bottleneck effects in type-II InAs/AlAsSb quantum well solar cells. Moreover, recent predictions also suggest that altering the QW to barrier thickness ratio in these structures enables control of the phonon scattering rate, and therefore hot carrier relaxation may be inhibited by design. Experimental analysis of these predictions is presented in solar cell architectures, as well as, their effects upon both the optical and electrical performance of these devices.
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