Stitching process is a widely adopted technique in manufacturing of image sensors to overcome reticle size limitations. In order to accomplish successful stitching, both standard overlay target data and stitching data from stitching marks need to be monitored and controlled. Large overlay will result in faulty electric connections between layers, and therefore result in chip failure. Similarly, large stitching also could cause the poor contact between neighboring sub-chips, and consequently result in device malfunction. In this article, we propose three novel methods to enable the correction per exposure (CPE) model for stitching and overlay control. With the implementation of these methods, the stitching and overlay residual are significantly improved compared with current solutions.
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