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In this paper, we screen absorber by n and k values. In the process, we introduce phasor notation in order to gain insight into the behavior of the absorber and try to understand the metrics. We investigate intrinsic contrast and image blur due to monopole image shift.
Earlier work has been done on double exposures that exposed in the same resist a horizontal grating with x-dipoles and subsequently a vertical grating with y dipoles, without intermediate process steps. This yielded a high contrast image in resist at k1 <0.3.1 We show that an equivalent result can be achieved in a single exposure with a single mask, at admittedly high dose. We investigate the process parameters and the related mask tolerances, and find a non-intuitive result for the mask pattern that yields an optimized image at given mask specifications. Finally, we investigate the extension of this technique to EUV through simulations and experiments.
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