SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a SXGA backside illuminated CMOS image sensor in a compact, low latency camera. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared, backside illumination for 100% fill factor, and state of the art read noise of 1.1 e/pix. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary nano and microtexturing processing technology in a backside illuminated architecture for high fill factor and enhanced near infrared absorption. The sensors can be configured with Bayer color filters for color imaging below quarter moon.
SiOnyx has extended the spectral sensitivity of a high performance low cost CMOS image sensor to cover the spectral band from 400nm to 1200nm. The enhanced quantum efficiency is combined with a CMOS sensor design that demonstrates state of the art read noise characteristics and low fixed pattern noise. The resultant sensor exhibits high signal to noise ratio throughout all lighting conditions from noon day sun to moonless clear starlight. In outdoor nighttime conditions, the extended quantum efficiency at wavelengths beyond 1000nm enables the silicon sensor to image “nightglow” illumination. This spectral range has historically only been accessible using non-silicon based SWIR sensors. This enables a true digital nightvision sensor with demonstrated imaging performance at 60 FPS at light levels below 1 mLux. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Recent progress in device architecture has enabled a further step change in near infrared quantum efficiency performance leading to improved nightglow imaging. SiOnyx has integrated this sensor into various camera systems for surveillance, nightvision and 1064nm laser see-spot.
SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx’s proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon’s native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed.
Demonstrated performance characteristics:
Pixel size : 5.6 and 10 um
Array size: 720P/1.3Mpix
Frame rate: 60 Hz
Read noise: 2 ele/pixel
Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm)
Daytime imaging: color (Bayer pattern)
Nighttime imaging: moonless starlight conditions
1064nm laser imaging: daytime imaging out to 2Km
SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a 720P CMOS image sensor in a compact, low latency camera. The camera contains a 1 inch (16 mm) optical format sensor and streams uncompressed video over CameraLink with row wise image latency below 1 msec. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Our technology demonstrates a 10 fold improvement in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see-spot.
SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser
semiconductor process technology. This technology demonstrates 10 fold improvements in infrared
sensitivity over incumbent imaging technology while maintaining complete compatibility with standard
CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal
plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as
well as infrared light from the night glow, this sensor technology provides imaging in daytime through
twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser
node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is
from 400 to 1200 nm.
SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.
SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this
remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high
volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows.
The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity
is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the
near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of
current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing
infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum
efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral
sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision
capability comparable to that of current image-intensifier based night vision goggles. The process is
compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost
than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of
incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
There is a strong desire to create narrowband infrared light sources as personnel beacons for application in infrared
Identify Friend or Foe (IFF) systems. This demand has augmented dramatically in recent years with the reports of
friendly fire casualties in Afghanistan and Iraq. ICx Photonics' photonic crystal enhancedTM (PCETM) infrared emitter
technology affords the possibility of creating narrowband IR light sources tuned to specific IR wavebands (near 1-2
microns, mid 3-5 microns, and long 8-12 microns) making it the ideal solution for infrared IFF. This technology is
based on a metal coated 2D photonic crystal of air holes in a silicon substrate. Upon thermal excitation the photonic
crystal modifies the emitted yielding narrowband IR light with center wavelength commensurate with the periodicity of
the lattice. We have integrated this technology with microhotplate MEMS devices to yield 15mW IR light sources in the
3-5 micron waveband with wall plug efficiencies in excess of 10%, 2 orders of magnitude more efficient that
conventional IR LEDs. We have further extended this technology into the LWIR with a light source that produces 9
mW of 8-12 micron light at an efficiency of 8%. Viewing distances >500 meters were observed with fielded camera
technologies, ideal for ground to ground troop identification. When grouped into an emitter panel, the viewing distances
were extended to 5 miles, ideal for ground to air identification.
Ion Optics has developed a thin silicon membrane MEMS device that replaces the thermal source, IR filter, IR detector and mechanical chopper in conventional non-dispersive infrared gas sensors. The key enabling technology is a 2-D photonic crystal. The center wavelength and bandwidth of emitted radiation from the photonic crystal depends upon the pattern etched into the surface. Previously we reported designs based on hexagonal arrangements of holes about 2 microns diameter. New results for more intricate designs with deliberate photonic crystal "defects" will be presented. Experimental results will be compared to 3-D electromagnetic models. The 2-D photonic crystal structure consists of an array of air rods produced by self-aligned etching into a thin (100nm) conductor on top of a dielectric membrane. We describe fabrication routes via conventional silicon microlithography and novel approaches including nano-imprinting and transfer molding. We present spectral emission and absorption measurements which relate optical intensity to details of photonic crystal design and fabrication.
Light-weight, low-power consumption, low-cost IR sources are required for combat ID (IFF, identify friend or foe), trail markers, pallet markers, etc. They must be visible with conventional viewers at 200 meters in the 3-5 micron or 8-12 micron bands and emit no visible or near infrared radiation. Ion Optics has tested a prototype MEMS IR source that can meet all of these requirements. It uses a hermetically sealed filament with a photonic crystal-enhanced (PCETM) coating that efficiently generates narrowband IR light. The photonic crystal surface structure limits emission to (tunable) predetermined bands (3-5 and 8-12 microns specifically). These devices generate 10mW of IR light in the 3-5 micron band with "wall-plug" efficiency of 10%, 2 orders of magnitude more efficient than conventional IR LED's. This high efficiency enables overnight battery operation. Using traditional 3-5 micron MWIR cameras, we measured visibility ranges of 200 meters. Current research and development on wafer-level packaging of the MEMS device promises to increase device yield, improve reliability, reduce package size and reduce total cost.
A new kind of Identification Friend or Foe (IFF) infrared beacon has been demonstrated. The omni-directional beacon consists of a pyramidal array of 1W pulsIR thermal light sources. Operating at a total power of 84W, the beacon can be used to track and identify surface vehicles and personnel with a recognition range of up to 6 miles on the battlefield and in urban environments or the marine boundary layer. Advanced photonic technology enables the beacon to be seen only while using a 3-5 μm or 8-12 μm thermal imaging system. There is no visible or near-IR emission to betray the location of the beacon. The beacon is rugged and will operate from -40 to 50°C ambient temperature, 0-100% relative humidity, 0 - 10,000 ft altitude, and meets MIL-STD 810F and MIL-STD 461E.
Sensors of trace gases are of enormous importance to diverse fields such as environmental protection, household safety, homeland security, bio-hazardous material identification, meteorology and industrial environments. The gases of interest include CO for home environments, CO2 for industrial and environment applications and toxic effluents such as SO2, CH4, NO for various manufacturing environments. We propose a new class of IR gas sensors, where the enabling technology is a spectrally tuned metallo-dielectric photonic crystal. Building both the emitting and sensing capabilities on to a single discrete element, Ion Optics’ infrared sensorchip brings together a new sensor paradigm to vital commercial applications. Our design exploits Si-based suspended micro-bridge structures fabricated using conventional photolithographic processes. Spectral tuning, control of bandwidth and direction of emission were accomplished by specially designed metallo-dielectric photonic crystal surfaces.
Inexpensive optical MEMS gas and chemical sensors offer chip-level solutions to environmental monitoring, industrial health and safety, indoor air quality, and automobile exhaust emissions monitoring. Previously, Ion Optics, Inc. reported on a new design concept exploiting Si-based suspended micro-bridge structures. The devices are fabricated using conventional CMOS compatible processes. The use of photonic bandgap (PBG) crystals enables narrow band IR emission for high chemical selectivity and sensitivity. Spectral tuning was accomplished by controlling symmetry and lattice spacing of the PBG structures. IR spectroscopic studies were used to characterize transmission, absorption and emission spectra in the 2 to 20 micrometers wavelength range. Prototype designs explored suspension architectures and filament geometries. Device characterization studies measured drive and emission power, temperature uniformity, and black body detectivity. Gas detection was achieved using non-dispersive infrared (NDIR) spectroscopic techniques, whereby target gas species were determined from comparison to referenced spectra. A sensor system employing the emitter/detector sensor-chip with gas cell and reflective optics is demonstrated and CO2 gas sensitivity limits are reported.
A new IR-based sensor technology is introduced for environmental monitoring of industrial pollutants (CO2, CO, NOx, etc.). The design concept exploits Si-based, thermally isolated suspended bridge structures. These devices, which function as both IR emitter and detector, are fabricated using MEMS-based processing methods. Photonic bandgap (PBG) modified surfaces enable narrow band IR emission for high chemical selectivity and sensitivity. Spectral tuning is accomplished by controlling symmetry and lattice spacing of the PBG structures. IR spectroscopic studies were used to characterize transmission, absorption and emission spectra in the 2 to 20 micrometers wavelength range. Device characterization studies measured drive and emission power, temperature uniformity, and black body detectivity. Gas detection was achieved using non-dispersive infrared (NDIR) spectroscopic techniques, whereby target gas species and concentrations were determined from comparison to referenced spectra. A sensor system employing the emitter/detector sensor-chip with gas cell and reflective optics is demonstrated and CO2 gas sensitivity limits are reported. A multi-channel microsensor-array is proposed for multigas (e.g., CO2, CO, and NOx, etc.) detection.
MEMS silicon (Si) micro-bridge elements, with photonic band gap (PBG) modified surfaces are exploited for narrow-band spectral tuning in the infrared wavelength regime. Thermally isolated, uniformly heated single crystal Si micro-heaters would otherwise provide gray-body emission, in accordance with Planck's distribution function. The introduction of an artificial dielectric periodicity in the Si, with a surface, vapor-deposited gold (Au) metal film, governs the photonic frequency spectrum of permitted propagation, which then couples with surface plasmon states at the metal surface. Narrow band spectral tuning was accomplished through control of symmetry and lattice spacing of the PBG patterns. Transfer matrix calculations were used to model the frequency dependence of reflectance for several lattice spacings. Theoretical predictions that showed narrow-band reflectance at relevant wavelengths for gas sensing and detection were then compared to measured reflectance spectra from processed devices. Narrow band infrared emission was confirmed on both conductively heated and electrically driven devices.
A NDIR-based sensor-chip using MEMS Si micro-bridge elements, with integrated PBG structure for wavelength tuning is discussed. The effects of processing on device performance, especially device release, were investigated. Thermal and electrical device characterization was used to quantify loss mechanisms. Thermally isolated, uniformly heated emitters were ultimately achieved using a backside release etch fabrication process. The fully released devices demonstrated superior electric to thermal (optical) conversion, with the requisite narrow band emission for CO2 detection. Using the MEMS sensor-chips, 20% CO2 detection was demonstrated, with projected sensitivities of ~3% CO2.
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