Dr. Masahiro Hatakeyama Profile

Dr. Masahiro Hatakeyama

at EBARA Corp

SPIE Involvement:

Author

Publications (23)

SPIE Journal Paper | 24 June 2016

Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

Ryoichi Hirano, Masahiro Hatakeyama, Kenji Terao, Hidehiro Watanabe

JM3, Vol. 15, Issue 02, 023507, (June 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.023507

KEYWORDS: Defect detection, Inspection, Photomasks, Signal detection, Extreme ultraviolet lithography, Detection and tracking algorithms, Image processing, Optimization (mathematics), Extreme ultraviolet, Electron microscopes

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Proceedings Article | 10 May 2016 Paper

Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, Kenji Terao

Proceedings Volume 9984, 99840M (2016) https://doi.org/10.1117/12.2241376

KEYWORDS: Inspection, Extreme ultraviolet lithography, Photomasks, Electron microscopes, Defect detection, Image sensors, Image processing, Sensors, Defect inspection, Imaging systems

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Proceedings Article | 18 March 2016 Paper

Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, Kenji Terao

Proceedings Volume 9776, 97761E (2016) https://doi.org/10.1117/12.2218763

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Image sensors, Defect detection, Extreme ultraviolet, Electron microscopes, Data processing, Image enhancement, Optical inspection, Image processing, Signal detection, Detection and tracking algorithms

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SPIE Journal Paper | 8 March 2016

Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenichi Suematsu, Kenji Terao

JM3, Vol. 15, Issue 02, 021008, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021008

KEYWORDS: Inspection, Photomasks, Defect detection, Image sensors, Extreme ultraviolet lithography, Signal detection, Sensors, Defect inspection, Image processing, Image resolution

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Proceedings Article | 23 October 2015 Paper

Detection capability enhancement with a learning system for PEM mask inspection tool

Ryoichi Hirano, Masahiro Hatakeyama, Kenji Terao, Hidehiro Watanabe

Proceedings Volume 9635, 96350B (2015) https://doi.org/10.1117/12.2196944

KEYWORDS: Defect detection, Inspection, Detection and tracking algorithms, Image processing, Photomasks, Extreme ultraviolet, Optimization (mathematics), Signal detection, Extreme ultraviolet lithography, Algorithm development

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SPIE Journal Paper | 21 September 2015

Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

JM3, Vol. 14, Issue 03, 033512, (September 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.033512

KEYWORDS: Defect detection, Signal detection, Photomasks, Extreme ultraviolet lithography, Inspection, Target detection, Extreme ultraviolet, Image processing, Image enhancement, Signal processing

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Proceedings Article | 9 July 2015 Paper

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenichi Suematsu, Kenji Terao

Proceedings Volume 9658, 96580L (2015) https://doi.org/10.1117/12.2197151

KEYWORDS: Inspection, Image sensors, Photomasks, Defect detection, Image processing, Extreme ultraviolet, Extreme ultraviolet lithography, Data processing, Defect inspection, Electron microscopes

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Proceedings Article | 13 March 2015 Paper

Study of EUVL patterned mask inspection tool for half-pitch (hp) 16nm-11nm node

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenichi Karimata, Kenji Terao

Proceedings Volume 9422, 942224 (2015) https://doi.org/10.1117/12.2085694

KEYWORDS: Inspection, Photomasks, Defect detection, Extreme ultraviolet lithography, Image sensors, Defect inspection, Sensors, CMOS sensors, Extreme ultraviolet, Data processing

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Proceedings Article | 29 October 2014 Paper

Recent results from EUVL patterned mask inspection using projection electron microscope system

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

Proceedings Volume 9235, 92351C (2014) https://doi.org/10.1117/12.2066134

KEYWORDS: Defect detection, Signal detection, Inspection, Target detection, Photomasks, Extreme ultraviolet lithography, Signal processing, Extreme ultraviolet, Image processing, Scanning electron microscopy

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Proceedings Article | 16 September 2014 Paper

Capability of particle inspection on patterned EUV mask using model EBEYE M

Masato Naka, Ryoji Yoshikawa, Shinji Yamaguchi, Takashi Hirano, Masamitsu Itoh, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 9235, 92350M (2014) https://doi.org/10.1117/12.2069161

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Particles, Scanning electron microscopy, Defect inspection, Defect detection, Image enhancement, Semiconducting wafers, Sensors

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According to the road map shown in ITRS [1], the EUV mask requirement for defect inspection is to detect the defect size of sub- 20 nm in the near future. EB (Electron Beam) inspection with high resolution is one of the promising candidates to meet such severe defect inspection requirements. However, conventional EB inspection using the SEM method has the problem of low throughput. Therefore, we have developed an EB inspection tool, named Model EBEYE M※. The tool has the PEM (Projection Electron Microscope) technique and the image acquisition technique with TDI (Time Delay Integration) sensor while moving the stage continuously to achieve high throughput [2]. In our previous study, we showed the performance of the tool applied for the half pitch (hp) 2X nm node in a production phase for particle inspection on an EUV blank. In the study, the sensitivity of 20 nm with capture rate of 100 % and the throughput of 1 hour per 100 mm square were achieved, which was higher than the conventional optical inspection tool for EUV mask inspection [3]-[5]. Such particle inspection is called for not only on the EUV blank but also on the patterned EUV mask. It is required after defect repair and final cleaning for EUV mask fabrication. Moreover, it is useful as a particle monitoring tool between a certain numbers of exposures for wafer fabrication because EUV pellicle has not been ready yet. However, since the patterned EUV mask consists of 3D structure, it is more difficult than that on the EUV blank. In this paper, we evaluated that the particle inspection on the EUV blank using the tool which was applied for the patterned EUV mask. Moreover, the capability of the particle inspection on the patterned EUV mask for the hp 2X nm node, whose target is 25 nm of the sensitivity, was confirmed. As a result, the inspection and SEM review results of the patterned EUV masks revealed that the sensitivity of the hp 100 nm Line/Space (LS) was 25 nm and that of the hp 140- 160 nm Contact Hole (CH) was 21 nm. Therefore, we confirmed that particle inspection on the patterned EUV mask using Model EBEYE M could be available for the EUV mask of the hp 2X nm node. In the future, we will try to inspect the production mask of the hp 2X nm node, and try to confirm the performance for the EUV mask of the hp 1X nm node.

Proceedings Article | 28 July 2014 Paper

EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsueno Terasawa, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao

Proceedings Volume 9256, 92560M (2014) https://doi.org/10.1117/12.2069723

KEYWORDS: Inspection, Defect detection, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Image processing, Data processing, Scanning electron microscopy, Target detection, Defect inspection

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Proceedings Article | 28 July 2014 Paper

Development of new inspection system with novel PEM for EUV pattern masks and its performance evaluation

Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao, Kenji Watanabe, Yasushi Tohma, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Tsuneo Terasawa, Hidehiro Watanabe

Proceedings Volume 9256, 92560T (2014) https://doi.org/10.1117/12.2069901

KEYWORDS: Inspection, Extreme ultraviolet, Imaging systems, Defect detection, Image acquisition, Image processing, Photomasks, Sensors, Image sensors, Extreme ultraviolet lithography

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Proceedings Article | 17 April 2014 Paper

EUV patterned mask inspection with an advanced projection electron microscope (PEM) system

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao

Proceedings Volume 9048, 90480Z (2014) https://doi.org/10.1117/12.2045412

KEYWORDS: Inspection, Defect detection, Photomasks, Extreme ultraviolet, Image processing, Extreme ultraviolet lithography, Algorithm development, Sensors, Detection and tracking algorithms, Integrated optics

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SPIE Journal Paper | 21 February 2014

Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks

Ryoichi Hirano, Susumu Lida, Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao

JM3, Vol. 13, Issue 01, 013009, (February 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.013009

KEYWORDS: Inspection, Photomasks, Defect detection, Transmittance, Signal detection, Extreme ultraviolet, Image resolution, Electron microscopes, Sensors, Extreme ultraviolet lithography

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Proceedings Article | 9 September 2013 Paper

EUV patterned mask inspection system using a projection electron microscope technique

Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

Proceedings Volume 8880, 88800U (2013) https://doi.org/10.1117/12.2027566

KEYWORDS: Inspection, Image processing, Transmittance, Image sensors, Extreme ultraviolet, Photomasks, Signal processing, Electron microscopes, Image resolution, Sensors

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Proceedings Article | 9 September 2013 Paper

Development of inspection system for EUV mask with novel projection electron microscopy (PEM)

Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao, Kenji Watanabe, Shoji Yoshikawa, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Tsuneo Terasawa, Hidehiro Watanabe

Proceedings Volume 8880, 888028 (2013) https://doi.org/10.1117/12.2027733

KEYWORDS: Imaging systems, Inspection, Extreme ultraviolet, Integrated optics, EUV optics, Sensors, Modulation transfer functions, Image acquisition, Extreme ultraviolet lithography, Transmittance

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Proceedings Article | 28 June 2013 Paper

Development of optical system on novel Projection Electron Microscopy (PEM) for EUV masks and its basic performance evaluation

Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao, Kenji Watanabe, Yoshihiko Naito, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Tsuneo Terasawa, Hidehiro Watanabe

Proceedings Volume 8701, 87010S (2013) https://doi.org/10.1117/12.2030647

KEYWORDS: Inspection, Transmittance, Imaging systems, Extreme ultraviolet, Integrated optics, Modulation transfer functions, Electron microscopy, Photomasks, System integration, Sensors

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Proceedings Article | 28 June 2013 Paper

Pattern inspection performance of novel Projection Electron Microscopy (PEM) on EUV masks

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao

Proceedings Volume 8701, 870116 (2013) https://doi.org/10.1117/12.2030653

KEYWORDS: Inspection, Photomasks, Defect detection, Signal detection, Extreme ultraviolet, Image resolution, Transmittance, Extreme ultraviolet lithography, Image sensors, Sensors

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SPIE Journal Paper | 28 February 2013

Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics

Ryoichi Hirano, Hidehiro Watanabe, Susumu Lida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami

JM3, Vol. 12, Issue 02, 021003, (February 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021003

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Image resolution, Defect detection, Optical design, EUV optics, Sensors, Data processing

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Proceedings Article | 8 November 2012 Paper

Capability of model EBEYE M for EUV mask production

Masato Naka, Shinji Yamaguchi, Motoki Kadowaki, Toru Koike, Takashi Hirano, Masamitsu Itoh, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8522, 85220K (2012) https://doi.org/10.1117/12.964099

KEYWORDS: Inspection, Signal to noise ratio, Extreme ultraviolet, Particles, Photomasks, Performance modeling, Scanning electron microscopy, Defect detection, Image acquisition, Systems modeling

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According to the ITRS Roadmap [1], within a few years the EUV mask requirement for defect will be detection of defect size of less than 25 nm. Electron Beam (EB) inspection is one of the candidates to meet such a severe defect requirement. EB inspection system, Model EBEYE M※1, has been developed for EUV mask inspection. Model EBEYE M employs Projection Electron Microscope (PEM) technique and image acquisition technique to acquire image with Time Delay Integration (TDI) sensor while the stage moves continuously [2]. Therefore, Model EBEYE M has high performance in terms of sensitivity, throughput and cost. In a previous study, we showed the performance of Model EBEYE M for 2X nm in a development phase whose sensitivity in pattern inspection was around 20 nm and in particle inspection was 20 nm with throughput of 2 hours in 100 mm square [3], [4]. With regard to pattern inspection, Model EBEYE M for High Volume Manufacturing (HVM) is currently under development in the production phase. With regard to particle inspection, Model EBEYE M for 2X nm is currently progressing from the development phase to the production phase. In this paper, the particle inspection performance of Model EBEYE M for 2X nm in the production phase was evaluated. Capture rate and repeatability were used for evaluating productivity. The target set was 100% capture rate of 20 nm. 100% repeatability of 20 nm with 3 inspection runs was also set as a target. Moreover, throughput of 1 hour in 100 mm square, which was higher than for Model EBEYE M for 2X nm in the development phase, was set as a target. To meet these targets, electron optical conditions were optimized by evaluating the Signal-to-Noise Ratio (SNR). As a result, SNR of 30 nm PSL was improved 2.5 times. And the capture rate of 20 nm was improved from 21% with throughput of 2 hours to 100% with throughput of 1 hour. Moreover, the repeatability of 20 nm with 3 inspection runs was 100% with throughput of 1 hour. From these results, we confirmed that Model EBEYE M particle inspection mode could be available for EUV mask production.

Proceedings Article | 30 June 2012 Paper

Development of novel projection electron microscopy (PEM) system for EUV mask inspection

Masahiro Hatakeyama, Takeshi Murakami, Tsutomu Karimata, Kenji Watanabe, Yoshihiko Naito, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Hidehiro Watanabe, Tsuneo Terasawa

Proceedings Volume 8441, 844116 (2012) https://doi.org/10.1117/12.978633

KEYWORDS: Inspection, Extreme ultraviolet, Transmittance, Photomasks, EUV optics, Electron microscopy, Image processing, Defect inspection, Optical design, Scanning electron microscopy

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Proceedings Article | 14 October 2011 Paper

Performance of EBeyeM for EUV mask inspection

Shinji Yamaguchi, Masato Naka, Takashi Hirano, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Tsutomu Karimata, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8166, 81662F (2011) https://doi.org/10.1117/12.898790

KEYWORDS: Inspection, Extreme ultraviolet, Particles, Signal to noise ratio, Optical inspection, Scanning electron microscopy, Sensors, Image quality, Image acquisition, Electron microscopes

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According to the ITRS Roadmap, the EUV mask requirement for 2X nm technology node is detection of defect size of 20 nm. The history of optical mask inspection tools involves continuous efforts to realize higher resolution and higher throughput. In terms of productivity, considering resolution, throughput and cost, we studied the capability of EUV light inspection and Electron Beam (EB) inspection, using Scanning Electron Microscope (SEM), including prolongation of the conventional optical inspection. As a result of our study, the solution we propose is EB inspection using Projection Electron Microscope (PEM) technique and an image acquisition technique to acquire inspection images with Time Delay Integration (TDI) sensor while the stage is continually moving. We have developed an EUV mask inspection tool, EBeyeM, whole design concept includes these techniques. EBeyeM for 2X nm technology node has the following targets, for inspection sensitivity, defects whose size is 20 nm must be detected and, for throughput, inspection time for particle and pattern inspection mode must be less than 2 hours and 13 hours in 100 mm square, respectively. Performance of the proto-type EBeyeM was reported. EBeyeM for 2X nm technology node was remodeled in light of the correlation between Signal to Noise Ratio (SNR) and defect sensitivity for the proto-type EBeyeM. The principal remodeling points were increase of the number of incident electrons to TDI sensor by increasing beam current for illuminating optics and realization of smaller pixel size for imaging optics. This report presents the performance of the remodeled EBeyeM (=EBeyeM for 2X nm) and compares it with that of the proto-type EBeyeM. Performances of image quality, inspection sensitivity and throughput reveal that the EBeyeM for 2X nm is improved. The current performance of the EBeyeM for 2X nm is inspection sensitivity of 20 nm order for both pattern and particle inspection mode, and throughput is 2 hours in 100 mm square for particle inspection mode.

Proceedings Article | 29 September 2010 Paper

Development of EB inspection system EBeyeM for EUV mask

Takashi Hirano, Shinji Yamaguchi, Masato Naka, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Kenji Watanabe, Norio Kimura, Naoya Hayashi

Proceedings Volume 7823, 78232C (2010) https://doi.org/10.1117/12.864208

KEYWORDS: Inspection, Extreme ultraviolet, Prototyping, Particles, Photomasks, Optical inspection, Defect inspection, Defect detection, Electron microscopes, Scanning electron microscopy

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Showing 5 of 23 publications

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