As design rule shrink, overlay has been critical factor for semiconductor manufacturing. However, the overlay
error which is determined by a conventional measurement with an overlay mark based on IBO and DBO often
does not represent the physical placement error in the cell area. The mismatch may arise from the size or pitch
difference between the overlay mark and the cell pattern. Pattern distortion caused by etching or CMP also can
be a source of the mismatch. In 2014, we have demonstrated that method of overlay measurement in the cell
area by using DBM (Design Based Metrology) tool has more accurate overlay value than conventional method
by using an overlay mark. We have verified the reproducibility by measuring repeatable patterns in the cell area,
and also demonstrated the reliability by comparing with CD-SEM data.
We have focused overlay mismatching between overlay mark and cell area until now, further more we have
concerned with the cell area having different pattern density and etch loading. There appears a phenomenon
which has different overlay values on the cells with diverse patterning environment. In this paper, the overlay
error was investigated from cell edge to center. For this experiment, we have verified several critical layers in
DRAM by using improved(Better resolution and speed) DBM tool, NGR3520.
Until recent device nodes, lithography has been struggling to improve its resolution limit. Even though next generation lithography technology is now facing various difficulties, several innovative resolution enhancement technologies, based on 193nm wavelength, were introduced and implemented to keep the trend of device scaling. Scanner makers keep developing state-of-the-art exposure system which guarantees higher productivity and meets a more aggressive overlay specification. “The scaling reduction of the overlay error has been a simple matter of the capability of exposure tools. However, it is clear that the scanner contributions may no longer be the majority component in total overlay performance. The ability to control correctable overlay components is paramount to achieve the desired performance.(2)” In a manufacturing fab, the overlay error, determined by a conventional overlay measurement: by using an overlay mark based on IBO and DBO, often does not represent the physical placement error in the cell area of a memory device. The mismatch may arise from the size or pitch difference between the overlay mark and the cell pattern. Pattern distortion, caused by etching or CMP, also can be a source of the mismatch. Therefore, the requirement of a direct overlay measurement in the cell pattern gradually increases in the manufacturing field, and also in the development level. In order to overcome the mismatch between conventional overlay measurement and the real placement error of layer to layer in the cell area of a memory device, we suggest an alternative overlay measurement method utilizing by design, based metrology tool. A basic concept of this method is shown in figure1. A CD-SEM measurement of the overlay error between layer 1 and 2 could be the ideal method but it takes too long time to extract a lot of data from wafer level. An E-beam based DBM tool provides high speed to cover the whole wafer with high repeatability. It is enabled by using the design as a reference for overlay measurement and a high speed scan system. In this paper, we have demonstrated that direct overlay measurement in the cell area can distinguish the mismatch exactly, instead of using overlay mark. This experiment was carried out for several critical layer in DRAM and Flash memory, using DBM(Design Based Metrology) tool, NGR2170™.
Extreme ultraviolet lithography (EUVL) is one of the most leading lithography technologies for high volume manufacturing. The EUVL is based on reflective optic system therefore critical patterning issues are arisen from the surface of photomask. Defects below and inside of the multilayer or absorber of EUV photomask is one of the most critical issues to implement EUV lithography in mass production. It is very important to pick out and repair printable mask defects. Unfortunately, however, infrastructure for securing the defect free photomask such as inspection tool is still under development furthermore it does not seem to be ready soon. In order to overcome the lack of infrastructures for EUV mask inspection, we will discuss an alternative methodology which is based on wafer inspection results using DBM (Design Based Metrology) tool. It is very challenging for metrology to quantify real mask defect from wafer inspection result since various sources are possible contributor. One of them is random defect comes from poor CD uniformity. It is probable that those random defects are majority of a defect list including real mask defects. It is obvious that CD uniformity should be considered to pick out only a real mask defect. In this paper, the methodology to determine real mask defect from the wafer inspection results will be discussed. Experiments are carried out on contact layer and on metal layer using mask defect inspection tool, Teron(KLA6xx) and DBM (Design Based Metrology) tool, NGR2170™.
With the shrinkage of semiconductor device scales, advanced semiconductor industries face tremendous challenges
in process control. As lithography and etch processes are pushed to get smaller dimensions, the overlay and
wiggling control are hot issues due to the limiting of pattern performance. Many chip makers are using Double
Patterning Technology (DPT) process to overcome design rule limitations but they are also concerned about overlay
control. In DPT process, obtaining accurate overlay data by measuring overlay marks with traditional metrology is
difficult because of the difference of shape and position between cell pattern and overlay marks. Cell to overlay
mark miss-match will occur when there is lens aberration or mask registration error. Therefore, the best way to
obtain accurate overlay data without error is to measure the real cell itself. The overlay of the cell array using DPT
process can be measured by analyzing the relative position of the 2nd exposed pattern to the 1st exposed pattern. But
it is not easy to clearly distinguish a 1st layer and 2nd layer in a patterned cell array image using CD SEM. The
Design Based Metrology (DBM)-system can help identify which cell pattern is a 1st or 2nd layer, so overlay error
between the 1st and 2nd layers at DPT process can be checked clearly. Another noticeable problem in advanced
processing is wiggling. The wiggling of a pattern become severe by the etch process and must be controlled to meet
electrical characteristics of what the semiconductor device requires. The 1st stage of wiggling control is to
understand the level of wiggling which is crucial to device performance. The DBM-system also can be used for
quantification of wiggling by determining specially designed parameters. In this paper we introduce overlay
verification and wiggling quantification through new methodology for advanced memory devices.
As the design rule shrinks down, various techniques such as RET, DFM have been continuously developed and
applied to lithography field. And we have struggled not only to obtain sufficient process window with those
techniques but also to feedback hot spots to OPC process for yield improvement in mass production. OPC
verification procedure which iterates its processes from OPC to wafer verification until the CD targets are met and
hot spots are cleared is becoming more important to ensure robust and accurate patterning and tight hot spot
management.
Generally, wafer verification results which demonstrate how well OPC corrections are made need to be fed back to
OPC engineer in effective and accurate way. First of all, however, it is not possible to cover all transistors in full-chip
with some OPC monitoring points which have been used for wafer verification. Secondly, the hot spots which
are extracted by OPC simulator are not always reliable enough to represent defective information for full-chip.
Finally, it takes much TAT and labor to do this with CD SEM measurement. These difficulties on wafer verification
would be improved by design based analysis. The optimal OPC monitoring points are created by classifying all
transistors in full chip layout and Hotspot set is selected by pattern matching process using the NanoScopeTM, which
is known as a fast design based analysis tool, with a very small amount of hotspots extracted by OPC simulator in
full chip layout. Then, each set is used for wafer verification using design based inspection tool, NGR2150TM. In this
paper, new verification methodology based on design based analysis will be introduced as an alternative method for
effective control of OPC accuracy and hot spot management.
As technology node of memory devices is approaching around 30nm, the process window is becoming much
narrower and production yield is getting more sensitive to tiny defects which used to be not, if ever, so critical. So it
would be very hard to expect the same production yield as now in near future.
It is possible to classify wafer defects into systematic and random defects. Systematic defects can be also divided
into design related and process related defects. Narrow process window, generally, is thought to be the source of
these systematic defects and we have to extend process window with Design for Manufacturing (DFM) and control
process variation with Advanced Process Control (APC) to ensure the production yield.
The sensitivity of random defects, however, has something to do with the smaller design rule itself. For example, the
narrower spaces between lines are subject to bridge defects and the smaller lines, to pinch defects.
Die to data base (DB) Design Based Metrology (DBM) has mainly been in use for detecting systematic defects and
feedback to DFM and APC so far. We are trying to extend the application of DBM to random defects control. The conventional defect inspection systems are reaching its highest limit due to the low signal to noise ratio for extremely small feature sizes of below 40nm. It is found that Die to DB metrology tool is capable of detecting small but critical defects with reliability.
KEYWORDS: Optical proximity correction, Metrology, Semiconducting wafers, Inspection, Metals, Error analysis, Process control, OLE for process control, Design for manufacturing, Electronic design automation
Recently several Design Based Metrologies (DBMs) are introduced and being in use for wafer verification. The
major applications of DBM are OPC accuracy improvement, DFM feed-back through Process Window
Qualification (PWQ) and advanced process control. In general, however, the amount of output data from DBM is
normally so large that it is very hard to handle the data for valuable feed-back. In case of PWQ, more than thousands
of hot spots are detected on a single chip at the edge of process window. So, it takes much time and labor to review
and analyze all the hot spots detected at PWQ. Design-related systematic defects, however, will be found repeatedly
and if they can be classified into groups, it would be possible to save a lot of time for the analysis.
We have demonstrated an EDA tool which can handle the large amount of output data from DBM by classifying
pattern defects into groups. It can classify millions of patterns into less than thousands of pattern groups. It has been
evaluated on the analysis of PWQ of metal layer in NAND Flash memory device and random contact hole patterns
in a DRAM device. Also, verification was tuned to specific needs of the designer as well as defect analysis
engineers by use of EDA tool's 'Pattern Matching Function'. The verification result was well within the required
specification of the designer as well as the analysis engineer. The procedures of Hot Spot Management through
Design Based Metrology are presented in detail.
Recently several Design Based Metrologies (DBMs) are introduced and being in use for wafer verification. The
major applications of DBM are OPC accuracy improvement, DFM feed-back through Process Window
Qualification (PWQ) and advanced process control. In general, however, the amount of output data from DBM is
normally so large that it is very hard to handle the data for valuable feed-back. In case of PWQ, more than thousands
of hot spots are detected on a single chip at the edge of process window. So, it takes much time and labor to review
and analyze all the hot spots detected at PWQ. Design-related systematic defects, however, will be found repeatedly
and if they can be classified into groups, it would be possible to save a lot of time for the analysis.
We have demonstrated an EDA tool which can handle the large amount of output data from DBM by reducing
pattern defects to groups. It can classify millions of patterns into less than thousands of pattern groups. It has been
evaluated on the analysis of PWQ of metal layer in NAND Flash memory device and random contact hole patterns
in a DRAM device.
The result shows that this EDA tool can handle the CD measurement data easily and can save us a lot of time and
labor for the analysis. The procedures of systematic defect filtering and data handling using an EDA tool are
presented in detail
The downscaling of the feature size and pitches of the semi-conductor device requires enough process window and good CDU of exposure field for improvement of device characteristics and high yield. Recently several DBMs (Design Based Metrologies) are introduced for the wafer verification and feed back to for DFM and process control. The major applications of DBM are OPC feed back, process window qualification and advanced process control feed back. With these tools, since the applied tool in this procedure uses e-beam scan method with database of design layout like other ones, more precise and quick verification can be done.
In this work the process window qualification procedure will be discussed in connection with EDA simulation results and then method for obtaining good CDU will be introduced. DoseMapperTM application has been introduced for better field CDU control, but it is difficult to fully correct large field with limited data from normal CD SEM methodology. New DBM has strong points in collecting lots of data required for large field correction with good repeatability (Intra / Inter field).
A new Robust Process Window Qualification (PWQ) Technique to perform
systematic defect characterization to enlarge the Lithographic process window is
described, using a Die-to-Database Verification Tool (NGR2100).
KEYWORDS: Semiconducting wafers, Optical proximity correction, Computer aided design, Electronic design automation, Metrology, OLE for process control, Process control, Transistors, Design for manufacturing, Data analysis
Recently several DBMs(Design Based Metrologies) are introduced for the wafer verification and feed back to DFM.
The major applications of DBM are OPC accuracy feed back, process window qualification and advanced process
control feed back. In general, however, DBM brings out huge amount of measurement data and it is necessary to
provide special server system for uploading and handling the raw data. And since it also takes much time and labor
to analyze the raw data for valuable feed back, it is desirable to connect to EDA tools such as OPC tools or
MBV(Model Based Verification) tools for data analysis. If they can communicate with a common language between
them, the DBM measurement result can be sent back to OPC or MBV tools for better model calibration. For
advanced process control of wafer CDU, DBM measurement results of field CDU can be fed back to scanner for
illumination uniformity correction.
In this work, we discuss tool integration of DBM with other tools like EDA tools. These tool integrations are
targeted for the verification procedure automation and as a result for faster and more exact analysis of measurement
data. The procedures of tool integration and automatic data conversion between them will be presented in detail.
K1 factor for development and mass-production of memory devices has been decreased down to below 0.30 in
recent years. Process technology has responded with extreme resolution enhancement technologies (RET) and much
more complex OPC technologies than before. ArF immersion lithography is expected to remain the major patterning
technology through under 35 nm node, where the degree of process difficulties and the sensitivity to process
variations grow even higher. So, Design for manufacturing (DFM) is proposed to lower the degree of process
difficulties and advanced process control (APC) is required to reduce the process variations. However, both DFM
and APC need much feed-back from the wafer side such as hot spot inspection results and total CDU measurements
at the lot, wafer, field and die level.
In this work, we discuss a new design based metrology which can compare SEM image with CAD data and measure
the whole CD deviations from the original layouts in a full die. It can provide the full information of hot spots and
the whole CD distribution diagram of various transistors in peripheral regions as well as cell layout. So, it is possible
to analyze the root cause of the CD distribution of some specific transistors or cell layout, such as OPC error, mask
CDU, lens aberrations or etch process variation and so on. The applications of this new inspection tool will be
introduced and APC using the analysis result will be presented in detail.
With the shrinking of device sizes, the issue of controlling gate critical dimension (CD) is becoming increasingly
important. In particular, the ability to find systematic defects and use that information in the design, optical proximity
correction (OPC), and mask creation phases is becoming critical to improving circuit yield. Current critical dimension
electron scanning microscopes (CD-SEMs) and macro inspection systems, however, fail to address this area in a
practically usable manner - with CD-SEMs limited by their low throughput, and macro inspection systems limited by
their low resolution. The NGR2100 die-to-database verification system introduces high-throughput, wide field of view
(FOV) electron beam scanning technology to allow for mass gate measurement and analysis. Using the collected data
combined with layout data and statistical analysis, the NGR2100 system categorizes and outputs the systematic CD
errors existing on a wafer, which can be fed back to the design, OPC, and mask creation phases for true design-for-manufacturing
(DFM) realization. This paper provides an overview of the NGR2100, the process involved for gate
CD error detection, and presents an actual case in which the NGR2100 was used to collect and analyze data for a
memory device.
The downscaling of the feature size and pitches of the semi-conductor device requires the improvement of device
characteristics and high yield continuously. In lithography process, RET techniques such as immersion and polarization
including strong PSM mask have enabled this improvement of printability and downscaling of device. It is true that
optical lithography is approaching its limit. So other lithographic technique such as EUV is needed but the application is
not yet available. In this point of view, the realization of lithography friendly layout enables good printability and stable
process. And its scope is being enlarged and applied in most semi-conductor devices. Therefore, in order to realize
precise and effective lithography friendly layout, we need full chip data feedback of design issue, OPC error and
aberration and process variables.
In this paper, we report the results of data feedback using new DFM verification tool. This tool enables full chip
inspection through E-beam scan method with fast and accurate output. And these data can be classified with each item
for correction and stability check through die to database inspection. Especially in gate process, total CD distributions in
full chip can be displayed and analyzed for each target with simple method. At first we obtain accuracy data for each
target and CD uniformity from hundreds of thousands of gate pattern. And second we detect a delicate OPC error by
modeling accuracy and duty difference. It is difficult to get from only measurement of thousands pattern. Finally we
investigated specific pattern and area for electrical characteristic analysis in full chip. These results should be
considered and reflected on design stage.
The NGR4000 enables high precision verification of mask features, by matching Scanning Electron Microscope (SEM)
images of the mask features to their intended mask design data. The system detects defects in Critical Dimensions
(CDs) and feature placement relative to the large Field of View (FOV). This tool is optimized to determine pattern
fidelity and perform CD measurements with repeatability well ahead of ITRS roadmap requirements. This paper will
show examples and describe the advantages of mass CD measurements, and relative feature placement accuracy as new
technique to define pattern fidelity.
Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FILTM) is a unique method for printing sub-100 nm geometries. Relative to other imprinting processes S-FIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates.
With respect to inspection, although defects as small as 70 nm have been detected using optical techniques, it is clear that it will be necessary to take advantage of the resolution capabilities of electron beam inspection techniques. The challenge is in inspecting templates composed purely of fused silica. This paper reports the inspection of both fused silica wafers and plates. The die-to-database inspection of the wafers was performed on an NGR2100 inspection system. Fused silica plates were inspected using an NGR4000 system.
Three different experiments were performed. In the first study, Metal 1 and Logic patterns as small as 40 nm were patterned on a 200 mm fused silica wafer. The patterns were inspected using an NGR2100 die-to-database inspection system. In the second experiment, a 6025 fused silica plate was employed. Patterns with a limited field of view (FOV) were inspected using an NGR4000 reticle-based system. To test the tool's capability for larger FOVs, 16 × 16 μm areas on a MoSi half tone plate were scanned and stitched together to evaluate the tool's ability to reliably do die-to-database comparisons across larger inspection areas.
The Geometry Verification System NGR2100 enables verification of the entire die, on a resist or an after-etch wafer, by comparing images of a die with corresponding target CAD data. The system detects systematic defects by variable criteria setting for allowable deformation quantities and obtains a CD distribution diagram. The result of systematic defects can then be used to make root cause analysis. The CD distribution diagram can achieve stepper aberration analysis, process windows extraction, macro-loading effect analysis, FEM measurement, and trend analysis more efficiently. Consequently, the Geometry Verification System NGR2100 will contribute to quicker TAT for DFM in Design, Lithography and Mask production.
The Geometry Verification System NGR2100 enables verification of the entire die, on a resist or an after-etch wafer, by comparing images of a die with corresponding target CAD data. The system detects systematic defects by variable criteria setting for allowable deformation quantities and obtains a CD distribution diagram. The result of systematic defects can then be used to make root cause analysis. The CD distribution diagram can achieve stepper aberration analysis, process windows extraction, macro-loading effect analysis, FEM measurement, and trend analysis more efficiently. Consequently, the Geometry Verification System NGR2100 will contribute to quicker TAT for DFM in Design, Lithography and Mask production.
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