In the advanced semiconductor lithography process, the tri-layer process have been used for the essential
technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer
process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process.
Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the
interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with
different photoresist.
Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate
for hp32 node and beyond. However complicated process flow and cost of ownership are the critical issue for this
process. LELE (Litho-Etch-Litho-Etch) is the one of the standard process, but in order to reduce the process and cost,
that LFLE(Litho-Freezing-Litho-Etch) and LLE (Litho-Litho-Etch) process have been investigated as the alternative
process. In these processes, Organic Bottom-Anti-Reflective coating (BARC) is used two times with same film in both
1st Litho and 2nd Lithography process. In 2nd Lithography process, resist pattern will be printed at space area where
exposed and developed in 1st lithography process. Therefore, organic BARC needs to have process stability in Photo and
development step to keep good litho performance between 1st and 2nd lithography in LFLE / LLE process.
This paper describes the process impact of 1st exposure and development for organic BARC, and the LFLE / LLE
performance with optimized organic BARC will be discussed.
A two-layer bottom anti-reflective coating (BARC) concept in which a layer that develops slowly is coated on top of a bottom layer that develops more rapidly was demonstrated. Development rate control was achieved by selection of crosslinker amount and BARC curing conditions. A single-layer BARC was compared with the two-layer BARC concept. The single-layer BARC does not clear out of 200-nm deep vias. When the slower developing single-layer BARC was coated on top of the faster developing layer, the vias were cleared. Lithographic evaluation of the two-layer BARC concept shows the same resolution advantages as the single-layer system. Planarization properties of a two-layer BARC system are better than for a single-layer system, when comparing the same total nominal thicknesses.
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