Dr. Mathias Irmscher Profile

Dr. Mathias Irmscher

Head of Nanopatterning BU at Institut Fuer Mikroelektronik Stuttgart

SPIE Involvement:

Author

Publications (52)

SPIE Journal Paper | 1 August 2017

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter, Eric Hendrickx

JM3, Vol. 16, Issue 04, 041002, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041002

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Proceedings Article | 24 March 2017 Paper

Reducing EUV mask 3D effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Eric Hendrickx, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter

Proceedings Volume 10143, 1014310 (2017) https://doi.org/10.1117/12.2257929

KEYWORDS: Extreme ultraviolet, Photomasks, Metals, Nickel, Lithography, Extreme ultraviolet lithography, Optical properties, X-ray diffraction, Etching, Cobalt, Refractive index

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Proceedings Article | 19 March 2015 Paper

Fabrication of NIL templates and diffractive optical elements using the new Vistec SB4050 VSB e-beam writer

Joerg Butschke, Mathias Irmscher, Corinna Koepernik, Stephan Martens, Holger Sailer, Bernd Schnabel

Proceedings Volume 9423, 94231A (2015) https://doi.org/10.1117/12.2086610

KEYWORDS: Nanoimprint lithography, Diffractive optical elements, Silicon, Semiconducting wafers, Vestigial sideband modulation, Quartz, Electron beam lithography, Photomasks, Holograms, Etching

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Proceedings Article | 23 September 2009 Paper

3D Si aperture-plates combined with programmable blanking-plates for multi-beam mask writing

Florian Letzkus, Mathias Irmscher, Michael Jurisch, Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 7488, 74883C (2009) https://doi.org/10.1117/12.829630

KEYWORDS: Silicon, Etching, Electrodes, Semiconducting wafers, Photomasks, Lithography, 3D metrology, Standards development, Beam shaping, Oxides

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Proceedings Article | 23 September 2009 Paper

High-resolution e-beam repair for nanoimprint templates

Marcus Pritschow, Harald Dobberstein, Klaus Edinger, Mathias Irmscher, Douglas Resnick, Kosta Selinidis, Ecron Thompson, Markus Waiblinger

Proceedings Volume 7488, 74880V (2009) https://doi.org/10.1117/12.833030

KEYWORDS: Scanning electron microscopy, Etching, Electron beams, Semiconducting wafers, Metals, Manufacturing, Silicon, Nanoimprint lithography, Photomasks, Ultraviolet radiation

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Proceedings Article | 23 September 2009 Paper

Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Elmar Platzgummer, Christof Klein, Peter Joechl, Hans Loeschner, Martin Witt, Wolfgang Pilz, Joerg Butschke, Michael Jurisch, Florian Letzkus, Holger Sailer, Mathias Irmscher

Proceedings Volume 7488, 74881D (2009) https://doi.org/10.1117/12.832156

KEYWORDS: Photomasks, Ions, Semiconducting wafers, Lithography, Nanofabrication, Silicon, Particles, Electronics, Nanostructures, Electron beams

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Proceedings Article | 11 May 2009 Paper

Inspection and repair for imprint lithography at 32 nm and below

Kosta Selinidis, Ecron Thompson, S. Sreenivasan, Douglas Resnick, Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Holger Sailer, Harald Dobberstein

Proceedings Volume 7379, 73790N (2009) https://doi.org/10.1117/12.824264

KEYWORDS: Photomasks, Inspection, Metals, Defect detection, Lithography, Semiconducting wafers, Scanning electron microscopy, Ultraviolet radiation, Electron beams, Image segmentation

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Proceedings Article | 11 May 2009 Paper

Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system

Joerg Butschke, Mathias Irmscher, Holger Sailer, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7379, 73792O (2009) https://doi.org/10.1117/12.824338

KEYWORDS: Photomasks, Line edge roughness, Critical dimension metrology, Line width roughness, Optical lithography, Etching, Nanofabrication, Electrons, Ions, Silver

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Proceedings Article | 18 March 2009 Paper

PML2: the maskless multibeam solution for the 22nm node and beyond

C. Klein, E. Platzgummer, J. Klikovits, W. Piller, H. Loeschner, T. Bejdak, P. Dolezel, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz, P. Jaschinsky, F. Thrum, C. Hohle, J. Kretz, J. Nogatch, A. Zepka

Proceedings Volume 7271, 72710N (2009) https://doi.org/10.1117/12.813670

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Electrodes, Prototyping, Electron beam lithography, Electron beam direct write lithography, Silicon, Optical alignment, Photomasks

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Proceedings Article | 18 March 2009 Paper

Evaluation of the CD-SEM Vistec LWM90xx for line-width measurement of nanoimprint templates

Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Lidia Parisoli, Toshihide Oba, Toshimichi Iwai, Takayuki Nakamura

Proceedings Volume 7271, 72711U (2009) https://doi.org/10.1117/12.814161

KEYWORDS: Quartz, Scanning electron microscopy, Photomasks, Contamination, Process control, Optical lithography, Nanoimprint lithography, Etching, Control systems, Metrology

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Proceedings Article | 20 October 2008 Paper

Mask patterning for the 22nm node using a proton multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Holger Sailer, Lorenz Nedelmann, Marcus Pritschow, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7122, 712236 (2008) https://doi.org/10.1117/12.801402

KEYWORDS: Etching, Electron beam lithography, Line edge roughness, Photoresist processing, Electron beams, Ion beams, Photomasks, Line width roughness, Ions, Nanofabrication

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Proceedings Article | 20 October 2008 Paper

Deflection unit for multi-beam mask making

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Michael Jurisch, Wolfram Klingler, Elmar Platzgummer, Christof Klein, Hans Loeschner, Reinhard Springer

Proceedings Volume 7122, 712235 (2008) https://doi.org/10.1117/12.801401

KEYWORDS: Etching, Silicon, Electrodes, Semiconducting wafers, Lithography, Aluminum, Mask making, Optical alignment, Switching, Line edge roughness

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Two main challenges of future mask making are the decreasing throughput of the pattern generators and the insufficient line edge roughness of the resist structures. The increasing design complexity with smaller feature sizes combined with additional pattern elements of the Optical Proximity Correction generates huge data volumes which reduce correspondingly the throughput of conventional single e-beam pattern generators. On the other hand the achievable line edge roughness when using sensitive chemically amplified resists does not fulfill the future requirements. The application of less sensitive resists may provide an improved roughness, however on account of throughput, as well. To overcome this challenge a proton multi-beam pattern generator is developed [1]. Starting with a highly parallel broad beam, an aperture-plate is used to generate thousands of separate spot beams. These beams pass through a blanking-plate unit, based on a CMOS device for de-multiplexing the writing data and equipped with electrodes placed around the apertures switching the beams "on" or "off", dependent on the desired pattern. The beam array is demagnified by a 200x reduction optics and the exposure of the entire substrate is done by a continuous moving stage. One major challenge is the fabrication of the required high aspect deflection electrodes and their connection to the CMOS device. One approach is to combine a post-processed CMOS chip with a MEMS component containing the deflection electrodes and to realize the electrical connection of both by vertical integration techniques. For the evaluation and assessment of this considered scheme and fabrication technique, a proof-of-concept deflection unit has been realized and tested. Our design is based on the generation of the deflection electrodes in a silicon membrane by etching trenches and oxide filling afterwards. In a 5mm x 5mm area 43,000 apertures with the corresponding electrodes have been structured and wired individually or in groups with aluminum lines. The aperture-plate for shaping the beams has been aligned and mounted on top of the blanking-plate. Afterwards this sandwich has been fixed on a base-plate with a pin plug as interface. The electrical connection has been performed with a standard chip bonding process to the aluminum pads on the blanking-plate. Finally, the proof-of-concept deflection unit was evaluated in a test bench. The results of electrical- and exposure tests are presented and discussed in detail.

Proceedings Article | 17 October 2008 Paper

Evaluation of e-beam repair for nanoimprint templates

Marcus Pritschow, Volker Boegli, Joerg Butschke, Mathias Irmscher, Douglas Resnick, Holger Sailer, Kosta Selinidis, Ecron Thompson

Proceedings Volume 7122, 71222L (2008) https://doi.org/10.1117/12.801946

KEYWORDS: Etching, Quartz, Photomasks, Nanoimprint lithography, Opacity, Inspection, Ultraviolet radiation, Scanning electron microscopy, Phase shifts, Silicon

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Proceedings Article | 1 April 2008 Paper

Integration issues in step and repeat UV nanoimprint lithography

C. Charpin-Nicolle, M. Irmscher, M. Pritschow, B. Vratzov, H. van Vossen, J. Chiaroni, J. Massin, P. Gubbini

Proceedings Volume 6921, 69212I (2008) https://doi.org/10.1117/12.790732

KEYWORDS: Etching, Nanoimprint lithography, Plasma, Semiconducting wafers, Silicon, Chlorine, Scanning electron microscopy, Chromium, Ultraviolet radiation, Optical alignment

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Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 26 March 2008 Paper

High resolution nanoimprint templates for dual damascene: fabrication and imprint results

Mathias Irmscher, Joerg Butschke, Ron Carpio, Brook Chao, Wei-Lun Jen, Corinna Koepernik, Lorenz Nedelmann, Jordan Owens, Frank Palmieri, Marcus Pritschow, Christian Reuter, Holger Sailer, Ken Satoodeh, Jeff Wetzel, Bruce Wilks, Grant Willson

Proceedings Volume 6921, 69210D (2008) https://doi.org/10.1117/12.772295

KEYWORDS: Etching, Chromium, Quartz, Manufacturing, Metals, Ultraviolet radiation, Photomasks, Optical lithography, Nanoimprint lithography, Lithography

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Proceedings Article | 20 March 2008 Paper

Projection maskless lithography (PML2): proof-of-concept setup and first experimental results

C. Klein, E. Platzgummer, H. Loeschner, G. Gross, P. Dolezel, M. Tmej, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz

Proceedings Volume 6921, 69211O (2008) https://doi.org/10.1117/12.772726

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Silicon, Electrodes, Polymethylmethacrylate, Maskless lithography, Electron beam lithography, Wafer-level optics, Nanofabrication

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Proceedings Article | 1 November 2007 Paper

Resistless mask structuring using an ion multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Florian Letzkus, Hans Loeschner, Lorenz Nedelmann, Elmar Platzgummer

Proceedings Volume 6730, 673047 (2007) https://doi.org/10.1117/12.742797

KEYWORDS: Photomasks, Etching, Ions, Photoresist processing, Optical lithography, Electron beam lithography, Ion beams, Line edge roughness, Chemically amplified resists, Nanofabrication

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Proceedings Article | 30 October 2007 Paper

Fabrication of nano-imprint templates for dual-Damascene applications using a high resolution variable shape E-beam writer

Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Holger Sailer, Douglas Resnick, Ecron Thompson

Proceedings Volume 6730, 67300G (2007) https://doi.org/10.1117/12.742498

KEYWORDS: Overlay metrology, Quartz, Electron beam lithography, Etching, Metals, Chromium, Nanolithography, Vestigial sideband modulation, Scanning electron microscopy, Chemically amplified resists

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Proceedings Article | 15 May 2007 Paper

Dry etch behavior of different TaN absorber layers for EUVL mask making

Florian Letzkus, Günter Hess, Mathias Irmscher, Konrad Knapp, Markus Renno, Eugen Röhrle, Holger Seitz

Proceedings Volume 6607, 66073D (2007) https://doi.org/10.1117/12.729032

KEYWORDS: Etching, Dry etching, Extreme ultraviolet lithography, Reflectivity, Photomasks, Inspection, Scanning electron microscopy, Mask making, Electron beam lithography, Manufacturing

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Proceedings Article | 14 May 2007 Paper

Three-dimensional template fabrication process for the dual damascene NIL approach

Joerg Butschke, Mathias Irmscher, Douglas Resnick, Holger Sailer, Ecron Thompson

Proceedings Volume 6607, 66070U (2007) https://doi.org/10.1117/12.728944

KEYWORDS: Etching, Photomasks, Quartz, Nanoimprint lithography, Photoresist processing, Electron beam lithography, Lithography, Printing, Chromium, Scanning electron microscopy

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Proceedings Article | 20 October 2006 Paper

Process window enhancement for 45-nm node using alterable transmission phase-shifting materials

Hans Becker, Markus Renno, Guenter Hess, Ute Buttgereit, Corinna Koepernik, Lorenz Nedelmann, Mathias Irmscher, Robert Birkner, Axel Zibold, Thomas Scheruebl

Proceedings Volume 6349, 63490J (2006) https://doi.org/10.1117/12.686022

KEYWORDS: Photomasks, Phase shifts, Etching, Silica, Tantalum, Lithography, Optical lithography, Semiconducting wafers, Scanners, Phase shifting

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Proceedings Article | 20 October 2006 Paper

Manufacturing of the first EUV full-field scanner mask

Uwe Dersch, Rico Buettner, Christian Chovino, Steffen Franz, Torben Heins, Holger Herguth, Jan Hendrik Peters, Thomas Rode, Florian Letzkus, Joerg Butschke, Mathias Irmscher

Proceedings Volume 6349, 63492G (2006) https://doi.org/10.1117/12.686035

KEYWORDS: Etching, Extreme ultraviolet, Photomasks, Reflectivity, Manufacturing, Extreme ultraviolet lithography, Scanners, Optical lithography, Photoresist processing, Chromium

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Proceedings Article | 19 May 2006 Paper

Extended process window using variable transmission PSM materials for 65 nm and 45 nm node

Corinna Koepernik, Hans Becker, Robert Birkner, Ute Buttgereit, Mathias Irmscher, Lorenz Nedelmann, Axel Zibold

Proceedings Volume 6283, 62831D (2006) https://doi.org/10.1117/12.681877

KEYWORDS: Photomasks, Etching, Nanoimprint lithography, Phase shifts, Tantalum, Semiconducting wafers, Tolerancing, Optical lithography, Lithography, Transmittance

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Proceedings Article | 19 May 2006 Paper

Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography

Masaki Yoshizawa, Vicky Philipsen, Leonardus H. A. Leunissen, Eric Hendrickx, Rik Jonckheere, Geert Vandenberghe, Ute Buttgereit, Hans Becker, Corinna Koepernik, Mathias Irmscher

Proceedings Volume 6283, 62831G (2006) https://doi.org/10.1117/12.681883

KEYWORDS: Tantalum, Phase shifts, Photomasks, Lithography, Line width roughness, Polarizers, Scanners, Lithographic illumination, Polarization, Manufacturing

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Most IC manufacturers are considering MoSi to be the material of conventional 6% attenuating phase-shifting masks (attPSM) in hyper-NA lithography (50 nm half pitch node and smaller). However, simulation results show that Cr-based binary-intensity mask (BIM) outperforms the attPSM at dense lines and spaces (LS) patterns in hyper-NA lithography. A reason lies in the transmitted polarization state through the mask. The attPSM is found to be a transverse-magnetic polarizer for hyper-NA imaging, while the BIM acts as a transverse-electric polarizer, which is beneficial for imaging. Using a metal-based absorber of the attPSM has potential for improving the degree of polarization of transmitted light. In our previous work absorber thickness of bi-layer attPSM, i.e. Ta/SiO₂, was optimized through three-dimensional electromagnetic field (3D-EMF) simulations for better imaging performance than the MoSi attPSM. In this study, the thickness-optimized Ta/SiO₂ attPSM was fabricated to compare the imaging performance with the standard Ta/SiO₂ and MoSi attPSMs with 6% transmission and 180^o phase shift. The thickness-optimized Ta/SiO₂ attPSM has 1% transmission due to 50% thicker Ta than the standard, while the 180^o phase shift is controlled by SiO₂ thickness. The exposure latitude of 45 nm LS delineated by using an NA1.20 full-field scanner with xy-polarized cquadrupole was 15.7%, 13.4%, and 10.1% with depth of focus of 200 nm for the optimized Ta/SiO₂, the standard Ta/SiO₂, and MoSi, respectively. Line width roughness of the Ta/SiO₂ attPSMs was approximately 5.5 nm for the 45 nm LS, which was comparable to MoSi. Mask-error-enhancement factor (MEEF) of the 45 nm LS was 4.4, 4.9, and 3.8 for the optimized Ta/SiO₂, the standard Ta/SiO₂, and MoSi, though the simulation expected MEEF values of 4.1, 5.5, and 6.3, respectively. Because the transmission and the phase shift measured by normal incidence are not linked directly with the imaging performance in the hyper-NA lithography with off-axis illumination, the mask materials and structures need to be optimized by using 3D-EMF simulators for the better imaging quality.

Proceedings Article | 29 March 2006 Paper

Evaluation of most recent chemically amplified resists for high resolution direct write using a Leica SB350 variable shaped beam writer

Anatol Schwersenz, Dirk Beyer, Monika Boettcher, Kang-Hoon Choi, Ulrich Denker, Christoph Hohle, Mathias Irmscher, Frank-Michael Kamm, Karl-Heinz Kliem, Johannes Kretz, Holger Sailer, Frank Thrum

Proceedings Volume 6153, 615347 (2006) https://doi.org/10.1117/12.655497

KEYWORDS: Semiconducting wafers, Photomasks, Optical lithography, Chemically amplified resists, Photoresist processing, Electron beam lithography, Beam shaping, Prototyping, Coating, Lithography

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Proceedings Article | 23 March 2006 Paper

NIL template manufacturing using a variable shaped e-beam writer and a new pCAR

Mathias Irmscher, Joerg Butschke, Guenter Hess, Corinna Koepernik, Florian Letzkus, Markus Renno, Holger Sailer, Hubert Schulz, Anatol Schwersenz, Ecron Thompson

Proceedings Volume 6151, 615115 (2006) https://doi.org/10.1117/12.656108

KEYWORDS: Etching, Quartz, Nanoimprint lithography, Photoresist processing, Photomasks, Chromium, Manufacturing, Electron beam lithography, Chemically amplified resists, Beam shaping

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Proceedings Article | 22 March 2006 Paper

EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers

Holger Seitz, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Torsten Reichardt, Ronny Walter, Helmut Popp, Günter Hess, Florian Letzkus, Jörg Butschke, Mathias Irmscher

Proceedings Volume 6151, 615109 (2006) https://doi.org/10.1117/12.655540

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Etching, Extreme ultraviolet, Multilayers, Dry etching, Polishing, Manufacturing, Reflectivity, Coating

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Proceedings Article | 8 November 2005 Paper

Determination of mask layer stress by placement metrology

Jörg Butschke, Ute Buttgereit, Eric Cotte, Günter Hess, Mathias Irmscher, Holger Seitz

Proceedings Volume 5992, 59923U (2005) https://doi.org/10.1117/12.631526

KEYWORDS: Photomasks, Tantalum, Metrology, Optical lithography, Chromium, Interferometers, Image registration, Quartz, Finite element methods, Lithography

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Proceedings Article | 8 November 2005 Paper

EUVL mask manufacturing: technologies and results

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Holger Sailer, Uwe Dersch, Christian Holfeld

Proceedings Volume 5992, 59922A (2005) https://doi.org/10.1117/12.628957

KEYWORDS: Etching, Extreme ultraviolet lithography, Wet etching, Photomasks, Dry etching, Chromium, Electron beam lithography, Scanning electron microscopy, Silicon, Manufacturing

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Proceedings Article | 8 November 2005 Paper

Template manufacturing for nanoimprint lithography using existing infrastructure

Mathias Irmscher, Joerg Butschke, Guenter Hess, Florian Letzkus, Markus Renno, Holger Sailer, Hubert Schulz, Anatol Schwersenz, Ecron Thompson, Boris Vratzov

Proceedings Volume 5992, 59922E (2005) https://doi.org/10.1117/12.629974

KEYWORDS: Etching, Quartz, Manufacturing, Nanoimprint lithography, Photomasks, Photoresist processing, Electron beam lithography, Chromium, Chemically amplified resists, Printing

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Proceedings Article | 28 June 2005 Paper

Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology

Corinna Koepernik, H. Becker, J. Butschke, U. Buttgereit, M. Irmscher, L. Nedelmann, F. Schmidt, S. Teuber

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617110

KEYWORDS: Etching, Tantalum, Chromium, Reactive ion etching, Optical lithography, Phase shifts, Dry etching, Diffractive optical elements, Oxygen, Photomasks

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Proceedings Article | 28 June 2005 Paper

Evaluation of e-beam sensitive CARs for advanced mask making

Axel Feicke, Mathias Irmscher, Anatol Schwersenz, Martin Tschinkl

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617111

KEYWORDS: Line edge roughness, Photoresist processing, Etching, Photomasks, Mask making, Scanning electron microscopy, Thin film coatings, Semiconducting wafers, Diffusion, Coating

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Proceedings Article | 6 December 2004 Paper

Patterning performance of most recent e-beam-sensitive CARs for advanced mask making: an update

Anatol Schwersenz, Joerg Butschke, Axel Feicke, Mathias Irmscher, Peter Voehringer

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568819

KEYWORDS: Line edge roughness, Etching, Mask making, Electron beam lithography, Critical dimension metrology, Coating, Photoresist processing, Chemically amplified resists, Scanning electron microscopy, Temperature metrology

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Proceedings Article | 20 August 2004 Paper

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557686

KEYWORDS: Etching, Opacity, Photoresist processing, Chromium, Scattering, Electron beam lithography, Photomasks, Optical lithography, Calibration, Chemically amplified resists

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Proceedings Article | 20 August 2004 Paper

Alternating aperture phase shift mask process using e-beam lithography for the second level

Corinna Koepernik, Joerg Butschke, Dirk Beyer, Mathias Irmscher, Bernd Leibold, Emmanuel Rausa, Rainer Plontke, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557719

KEYWORDS: Overlay metrology, Photomasks, Etching, Electron beam lithography, Quartz, Scanning electron microscopy, Phase shifts, Lithography, Thin film coatings, Microsystems

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Proceedings Article | 2 June 2004 Paper

Avoidance/reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z

Rainer Plontke, Lutz Bettin, Dirk Beyer, Joerg Butschke, Mathias Irmscher, Corinna Koepernik, Bernd Leibold, Armelle Vix, Peter Voehringer

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568033

KEYWORDS: Quartz, Chromium, Thin film coatings, Electron beam lithography, Photomasks, Distortion, Optical inspection, Overlay metrology, Metrology, Resistance

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Proceedings Article | 17 December 2003 Paper

90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518043

KEYWORDS: Opacity, Mask making, Electron beam lithography, Photoresist processing, Etching, Chemically amplified resists, Optical proximity correction, Line edge roughness, Photomasks, Scattering

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Proceedings Article | 17 December 2003 Paper

Second-level imaging of advanced alternating phase-shift masks using e-beam lithography

Bernd Leibold, Joerg Butschke, Lutz Bettin, Dirk Beyer, Mathias Irmscher, Corinna Koepernik, Rainer Plontke, Armelle Vix, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518037

KEYWORDS: Quartz, Electron beam lithography, Photomasks, Distortion, Thin film coatings, Overlay metrology, Etching, Phase shifts, Coating, Chemically amplified resists

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Proceedings Article | 28 August 2003 Paper

Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

Mathias Irmscher, Lothar Berger, Dirk Beyer, Joerg Butschke, Peter Dress, Thomas Hoffmann, Peter Hudek, Corinna Koepernik, Martin Tschinkl, Peter Voehringer

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504185

KEYWORDS: Photomasks, Etching, Coating, Mask making, Chemically amplified resists, Binary data, Line edge roughness, Photoresist processing, Optical proximity correction, Scanning electron microscopy

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Proceedings Article | 27 December 2002 Paper

Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000

Corinna Koepernik, Dirk Beyer, Peter Dress, Thomas Hoffmann, Peter Hudek, Mathias Irmscher, Christian Krauss, Bernd Leibold, Dietmar Mueller, Christian Reuter, Reinhard Springer, Jakob Szekeresch, Peter Voehringer

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467424

KEYWORDS: Coating, Photoresist processing, Mask making, Chemically amplified resists, Photomasks, Electron beam lithography, Capillaries, Binary data, Critical dimension metrology, Etching

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Proceedings Article | 27 December 2002 Paper

STEAG HamaTech resist coater ASR5000: tool concept and process results

Christian Krauss, Uwe Dietze, Fei Xu, Corinna Koepernik, Peter Dress, Peter Voehringer, Mathias Irmscher, Jakob Szekeresch

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467509

KEYWORDS: Thin film coatings, Photomasks, Photoresist processing, Capillaries, Liquids, Temperature metrology, Particles, Patents, Control systems, Solids

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Proceedings Article | 27 December 2002 Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

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Proceedings Article | 16 August 2002 Paper

Measures to achieve 20nm IPL stencil mask distortion

Ernst Haugeneder, A. Chalupka, T Lammer, Hans Loeschner, Frank-Michael Kamm, Thomas Struck, Albrecht Ehrmann, Rainer Kaesmaier, Andreas Wolter, Joerg Butschke, Mathias Irmscher, Florian Letzkus, Reinhard Springer

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479353

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Ion beams, Electrodes, Ions, Wafer bonding, Manufacturing, Projection lithography

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Proceedings Article | 1 August 2002 Paper

Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Chris Constantine, Thomas Hoffmann, Corinna Koepernik, Christian Krauss, Bernd Leibold, Florian Letzkus, Dietmar Mueller, Reinhard Springer, Peter Voehringer

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476944

KEYWORDS: Photomasks, Semiconducting wafers, Mask making, Line edge roughness, Etching, Silicon, Coating, Chemically amplified resists, Photoresist processing, Chromium

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Proceedings Article | 21 July 2000 Paper

IPL stencil mask distortions: experimental and theoretical analysis

Albrecht Ehrmann, Thomas Struck, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390075

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Silicon, Pellicles, Carbon, Ions, Projection lithography, Quartz, Manufacturing

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Proceedings Article | 21 July 2000 Paper

Stencil mask key parameter measurement and control

Albrecht Ehrmann, Annika Elsner, Roman Liebe, Thomas Struck, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390074

KEYWORDS: Photomasks, Silicon, Carbon, Etching, Critical dimension metrology, Inspection, Semiconducting wafers, Silicon carbide, Manufacturing, Particles

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Proceedings Article | 21 July 2000 Paper

Resist technologies for ion projection lithography (IPL) stencil maskmaking

Mathias Irmscher, Joerg Butschke, Klaus Elian, Bernd Hoefflinger, Karl Kragler, Florian Letzkus, Joerg Ochsenhirt, Christian Reuter, Reinhard Springer

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390072

KEYWORDS: Etching, Silicon, Carbon, Photomasks, Photoresist processing, Lithography, Ions, Silicon carbide, Mask making, Semiconducting wafers

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Proceedings Article | 3 February 2000 Paper

Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Joerg Ochsenhirt, Joerg Butschke, Florian Letzkus, Bernd Hoefflinger, Mathias Irmscher, Christian Reuter, Reinhard Springer, Klaus Elian

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377121

KEYWORDS: Silicon, Photoresist processing, Photomasks, Etching, Mask making, Tin, Plasma, Line edge roughness, Statistical analysis, Critical dimension metrology

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Proceedings Article | 30 December 1999 Paper

Placement measurement and FE modeling results for distortion control of stencil masks

Albrecht Ehrmann, Thomas Struck, Rainer Kaesmaier, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Roxann Engelstad

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373376

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Etching, Electron beam lithography, Oxides, Quartz, Semiconductor lasers, Lamps

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Proceedings Article | 23 April 1999 Paper

PN and SOI wafer flow process for stencil mask fabrication

Joerg Butschke, Albrecht Ehrmann, Ernst Haugeneder, Mathias Irmscher, Rainer Kaesmaier, Karl Kragler, Florian Letzkus, Hans Loeschner, Josef Mathuni, Ivo Rangelow, Carsten Reuter, Feng Shi, Reinhard Springer

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346224

KEYWORDS: Etching, Semiconducting wafers, Silicon, Photomasks, Oxides, Electrochemical etching, Metals, Lithography, Ions, Wafer bonding

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