Mr. Matthew E. Hansen Profile

Matthew E. Hansen

Optical Engineer at ASML

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Publications (7)

Proceedings Article | 2 September 2008 Paper

Metrologically speaking

Matthew Hansen

Proceedings Volume 7068, 70680K (2008) https://doi.org/10.1117/12.797166

KEYWORDS: Metrology, Mirrors, Monochromatic aberrations, Optical metrology, Lithography, Reticles, Semiconducting wafers, Holography, Optical alignment, Optical engineering

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Proceedings Article | 14 September 2001 Paper

SVG 157-nm lithography technical review

Thomas Fahey, James McClay, Matthew Hansen, Bruce Tirri, Matthew Lipson

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435789

KEYWORDS: Contamination, Lithography, Coating, Oxygen, Silicon, Optical coatings, Reticles, Silica, Optical lithography, 193nm lithography

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Proceedings Article | 5 July 2000 Paper

SVG 157-nm lithography approach

James McClay, Michael DeMarco, Thomas Fahey, Matthew Hansen, Bruce Tirri

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389006

KEYWORDS: Lithography, Contamination, Optical coatings, Optical lithography, Reticles, Autoregressive models, Metrology, Antireflective coatings, Coherence (optics), Performance modeling

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Proceedings Article | 13 May 1994 Paper

Interferometric investigation of x-ray mask fabrication distortions

Matthew Hansen, Roxann Engelstad, Michael Reilly, Frederick Moore

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175830

KEYWORDS: Photomasks, Semiconducting wafers, X-rays, Etching, Interferometry, Mask making, Wafer bonding, Silicon, Reactive ion etching, Nickel

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Proceedings Article | 13 May 1994 Paper

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

Matthew Hansen, Franco Cerrina

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175831

KEYWORDS: X-rays, Photomasks, Silicon carbide, Holography, Silicon, Interferometry, Phase interferometry, Holographic interferometry, Etching, X-ray lithography

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Proceedings Article | 13 May 1994 Paper

Application and experimental verification of finite element modeling of friction effects for x-ray lithography mask mounts

Hector Chen, Matthew Hansen, Roxann Engelstad, William Johnson

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175810

KEYWORDS: Photomasks, Finite element methods, X-ray lithography, Chemical elements, Interferometry, Temperature metrology, Kinematics, 3D modeling, X-rays, Data modeling

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Proceedings Article | 1 March 1991 Paper

Applications of holographic gratings in x-ray mask metrology

Matthew Hansen

Proceedings Volume 1396, (1991) https://doi.org/10.1117/12.47750

KEYWORDS: Photomasks, X-rays, Semiconducting wafers, Holography, Metrology, Diffraction gratings, X-ray lithography, Interferometry, Moire patterns, Holography applications

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X-ray lithography is a proximity printing process. After a resist-coated wafer is positioned 10-40 m behind the x-ray mask, the mask and wafer are aligned and secured for the 'x-ray exposure. Securing the mask may create distortions in the membrane. The lx nature of proximity printing demands that these distortions be tightly controlled. At O.25,tm critical dimension, the distortion budget allocated to the mask is 25 nm. This corresponds to 0.7 ppm over a field of 1" . It is thus necessary to develop a metrology tool capable of accurately and rapidly measuring distortions induced in the mask. Interferometry, because of its non-contact nature and high sensitivity, is ideally suited to the task. The construction of an x-ray mask begins with the deposition of a 1-2 m film onto a silicon wafer substrate.' After carrier deposition, the mask wafer is bonded to a glass or silicon mounting ring. The mounting ring gives the mask rigidity and provides a mechanism for mounting the mask during x-ray exposure. Mask distortions may occur in the bonding process due to non-fiat wafers or bonding ring irregularities. The central region of mask blank wafer is then back-etched with KOH to create an x-ray transparent membrane. The redistribution of stress in the carrier during the membrane construction is a second source of distortion in the mask-making process. The mask blank is subsequently patterned and metallized. Localized stresses occurring at the absorber-membrane boundaries can lead to additional mask distortions. Several interferometric techniques can be employed to characterize the sources of the above-mentioned x-ray mask distortions. Out-of-plane distortions (OPD) of x-ray masks have been measured with the Michelson interferometer. In-plane distortions (IPD) in the mask have been characterized using Moire interferometry. In Moire, diffraction gratings printed on the mask pre-exposure are examined post-exposure in a virtual grating. Both OPD and IPD have been observed in-situ using shear interferometry.

Showing 5 of 7 publications

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