Dr. Matthew H. Kane Profile

Dr. Matthew H. Kane

Associate Professor at Texas A&M Univ at Galveston

SPIE Involvement:

Editor | Author

Area of Expertise:

Solid State Lighting , Detectors and Sensors , Materials Growth , Magnetic Materials

Proceedings Article | 24 September 2011 Paper

Atomic distribution of transition metals in III-nitrides

Robert Nicholas, Matthew Kane

Proceedings Volume 8123, 81231L (2011) https://doi.org/10.1117/12.893578

KEYWORDS: Chemical species, Manganese, Platinum, Magnetic semiconductors, Magnetism, Transition metals, Thin films, Metalorganic chemical vapor deposition, Statistical analysis, Ferromagnetics

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Proceedings Article | 18 August 2009 Paper

Low temperature buffer growth for the development of vertical light emitting diodes

R. Nicholas, R. Losher, F. Zhao, S. Glenn, M. Kane

Proceedings Volume 7422, 74220M (2009) https://doi.org/10.1117/12.829516

KEYWORDS: Zinc oxide, Gallium nitride, Sapphire, Atomic layer deposition, Light emitting diodes, Chemical vapor deposition, Silicon films, Solid state lighting, Silicon, Atomic force microscopy

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Proceedings Article | 3 September 2008 Paper

MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Hongbo Yu, Shenjie Wang, Nola Li, William Fenwick, Andrew Melton, Matthew Kane, B. Klein, Ian Ferguson

Proceedings Volume 7058, 70580V (2008) https://doi.org/10.1117/12.798540

KEYWORDS: Zinc oxide, Superlattices, Gallium nitride, Temperature metrology, Satellites, Optical properties, Interfaces, Indium gallium nitride, Quantum wells, Crystals

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Proceedings Article | 20 February 2007 Paper

Transition-metal- and rare-earth-doped ZnO: a comparison of optical, magnetic, and structural behavior of bulk and thin films

W. Fenwick, M. Kane, R. Varatharajan, T. Zaidi, Z. Fang, B. Nemeth, D. Keeble, H. El-Mkami, G. Smith, J. Nause, C. Summers, I. Ferguson

Proceedings Volume 6474, 64741Q (2007) https://doi.org/10.1117/12.717788

KEYWORDS: Zinc oxide, Crystals, Magnetism, Cobalt, Zinc, Thin films, Transition metals, Manganese, Luminescence, Ferromagnetics

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Proceedings Article | 3 March 2006 Paper

Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

Matthew Kane, Martin Strassburg, Ali Asghar, Nola Li, Will Fenwick, Ian Ferguson

Proceedings Volume 6121, 61210L (2006) https://doi.org/10.1117/12.659025

KEYWORDS: Manganese, Gallium, Magnetism, Gallium nitride, Ions, Silicon, Raman spectroscopy, Magnetic semiconductors, Metalorganic chemical vapor deposition, Ferromagnetics

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Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga_1-xMn_xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm^-1 and sharper modes near 669cm^-1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga_1-xMn_xN results in shallow donor states in GaN suppress the formation of nitrogen vacancies by compensating the p-type deep level defects introduced by substitutional Mn. The formation of a Mn-related midgap impurity band is observed via optical transmission measurement in Ga_1-xMn_xN with strong magnetic signatures, but not for Si co-doped samples. Initial studies on light emitting diodes (LEDs) containing a Mn-doped active region have also been produced. Devices were fabricated with different Mn-doped active layer thicknesses, and I-V characteristics show that the devices become highly resistive as thickness of the Mn-doped active layer increases. The electroluminescence of these devices is dominated by a high suppressed band-edge recombination and a midgap defect-related emission, leading to an orange-colored but weakly emitting LED. These results suggest that traditional theoretical and device approaches akin to those realized in Ga_1-xMn_xN may be difficult to realize in Ga_1-xMn_xN, and exploitation of these materials will require further novel device approaches taking into account the nature of this material.

Proceedings Article | 25 March 2005 Paper

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Matthew Kane, Martin Strassburg, Ali Asghar, Qing Song, Shalini Gupta, Jayantha Senawiratne, Christoph Hums, Ute Haboeck, Axel Hoffmann, Dmitry Azamat, Wolfgang Gehlhoff, Nikolaus Dietz, Z. John Zhang, Christopher Summers, Ian Ferguson

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.582980

KEYWORDS: Manganese, Gallium, Gallium nitride, Magnetism, Nanostructures, Annealing, Metalorganic chemical vapor deposition, Silicon, Magnetic semiconductors, Ferromagnetics

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