Dr. Michael W. Cresswell Profile

Dr. Michael W. Cresswell

Retired at National Institute of Standards and Technology

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Author

Publications (22)

SPIE Journal Paper | 13 October 2016

Transmission electron microscope calibration methods for critical dimension standards

Ndubuisi G. Orji, Ronald Dixson, Domingo Garcia-Gutierrez, Benjamin Bunday, Michael Bishop, Michael Cresswell, Richard Allen, John A. Allgair

JM3, Vol. 15, Issue 04, 044002, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.044002

KEYWORDS: Critical dimension metrology, Calibration, Transmission electron microscopy, Electron microscopes, Error analysis, Silicon, Line width roughness, Oxides, Statistical analysis, Standards development

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SPIE Journal Paper | 9 March 2016

Process optimization for lattice-selective wet etching of crystalline silicon structures

Ronald Dixson, William Guthrie, Richard Allen, Ndubuisi Orji, Michael Cresswell, Christine Murabito

JM3, Vol. 15, Issue 01, 014503, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014503

KEYWORDS: Etching, Silicon, Calibration, Crystals, Standards development, Scanning electron microscopy, Oxides, Metrology, Wet etching, Photomasks

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SPIE Journal Paper | 29 May 2012

Robust auto-alignment technique for orientation-dependent etching of nanostructures

Craig McGray, Ndubuisi Orji, Ronald Dixson, Michael Cresswell, Richard Allen, Jon Geist, Richard Kasica

JM3, Vol. 11, Issue 02, 023005, (May 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.2.023005

KEYWORDS: Etching, Crystals, Nanostructures, Photomasks, Silicon, Nanolithography, Lithography, Optical alignment, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 9 September 2008 Paper

Extraction of trench geometry and linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry

Heather Patrick, Thomas Germer, Michael Cresswell, Bin Li, Huai Huang, Paul Ho

Proceedings Volume 7042, 70420B (2008) https://doi.org/10.1117/12.796286

KEYWORDS: Scatterometry, Silicon, Reflectivity, Scanning electron microscopy, Scatter measurement, Oxides, Data modeling, Electron beam lithography, Scattering, Crystals

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Proceedings Article | 25 March 2008 Paper

Modeling the effect of finite size gratings on scatterometry measurements

Elizabeth Kenyon, Michael Cresswell, Heather Patrick, Thomas Germer

Proceedings Volume 6922, 69223P (2008) https://doi.org/10.1117/12.772769

KEYWORDS: Diffraction, Reflectivity, Scatterometry, Diffraction gratings, Gaussian beams, Scatter measurement, Metrology, Sensors, Silicon, Optical simulations

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Proceedings Article | 30 October 2007 Paper

Photomask applications of traceable atomic force microscope dimensional metrology at NIST

Ronald Dixson, Ndubuisi Orji, James Potzick, Joseph Fu, Richard Allen, Michael Cresswell, Stewart Smith, Anthony Walton, Andreas Tsiamis

Proceedings Volume 6730, 67303D (2007) https://doi.org/10.1117/12.746755

KEYWORDS: Metrology, Calibration, Atomic force microscopy, Photomasks, Standards development, Phase shifts, Dimensional metrology, Atomic force microscope, Resistance, Microelectronics

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The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. Three major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C-AFM), the second is the first generation of commercially available critical dimension AFM (CD-AFM), and the third is a current generation CD-AFM at SEMATECH - for which NIST has established the calibration and uncertainties. All of these instruments have useful applications in photomask metrology. Linewidth reference metrology is an important application of CD-AFM. We have performed a preliminary comparison of linewidths measured by CD-AFM and by electrical resistance metrology on a binary mask. For the ten selected test structures with on-mask linewidths between 350 nm and 600 nm, most of the observed differences were less than 5 nm, and all of them were less than 10 nm. The offsets were often within the estimated uncertainties of the AFM measurements, without accounting for the effect of linewidth roughness or the uncertainties of electrical measurements. The most recent release of the NIST photomask standard - which is Standard Reference Material (SRM) 2059 - was also supported by CD-AFM reference measurements. We review the recent advances in AFM linewidth metrology that will reduce the uncertainty of AFM measurements on this and future generations of the NIST photomask standard. The NIST C-AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the iodine-stabilized He-Ne laser. One of the important applications of the C-AFM is step height metrology, which has some relevance to phase shift calibration. In the current generation of the system, the approximate level of relative standard uncertainty for step height measurements at the 100 nm scale is 0.1 %. We discuss the monitor history of a 290 nm step height, originally measured on the C-AFM with a 1.9 nm (k = 2) expanded uncertainty, and describe advances that bring the step height uncertainty of recent measurements to an estimated 0.6 nm (k = 2). Based on this work, we expect to be able to reduce the topographic component of phase uncertainty in alternating aperture phase shift masks (AAPSM) by a factor of three compared to current calibrations based on earlier generation step height references.

Proceedings Article | 5 April 2007 Paper

Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards

Ronald Dixson, William Guthrie, Michael Cresswell, Richard Allen, Ndubuisi Orji

Proceedings Volume 6518, 651815 (2007) https://doi.org/10.1117/12.713289

KEYWORDS: Etching, Calibration, Standards development, Scanning electron microscopy, Silicon, Photomasks, Oxides, Metrology, Ultrasonics, Atomic force microscopy

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Proceedings Article | 5 April 2007 Paper

TEM calibration methods for critical dimension standards

Ndubuisi Orji, Ronald Dixson, Domingo Garcia-Gutierrez, Benjamin Bunday, Michael Bishop, Michael Cresswell, Richard Allen, John Allgair

Proceedings Volume 6518, 651810 (2007) https://doi.org/10.1117/12.713368

KEYWORDS: Transmission electron microscopy, Calibration, Standards development, Crystals, Electron microscopes, Scanning electron microscopy, Metrology, Silicon, Atomic force microscope, Image resolution

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One of the key challenges in critical dimension (CD) metrology is finding suitable calibration standards. Over the last few years there has been some interest in using features measured with the transmission electron microscope (TEM) as primary standards for linewidth measurements. This is because some modes of TEM can produce lattice-resolved images having scale traceability to the SI (Systeme International d'Unites or International System of Units) definition of length through an atomic lattice constant. As interest in using calibration samples that are closer to the length scales being measured increases, so will the use of these TEM techniques. An area where lattice-traceable images produced by TEM has been used as a primary standard is in critical dimension atomic force microscope (CD-AFM) tip width calibration. Two modes of TEM that produce crystal lattice-traceable images are high resolution transmission electron microscope (HR-TEM) and high angle annular dark field scanning transmission electron microscope (HAADF-STEM). HR-TEM produces lattice-traceable images by interference patterns of the diffracted and transmitted beams rather than the actual atomic columns, while HAADF-STEM produces direct images of the crystal lattice. The difference in how both of these techniques work could cause subtle variations in the way feature edges are defined. In this paper, we present results from width samples measured using HR-TEM and HAADF-STEM. Next we compare the results with measurements taken from the same location by two different CD-AFMs. Both of the CD-AFM instruments used for this work have been calibrated using a single crystal critical dimension reference material (SCCDRM). These standards, developed by the National Institute of Standards and Technology (NIST) and SEMATECH, used HR-TEM for traceable tip-width calibration. Consequently, the present work and the previous SCCDRM work provide a mutual cross-check on the traceability of the width calibration. Excellent agreement was observed.

Proceedings Article | 20 October 2006 Paper

A new critical dimension metrology for chrome-on-glass substrates based on S-parameter measurements extracted from coplanar waveguide test structures

Chidubem Nwokoye, Mona Zaghloul, Michael Cresswell, Richard Allen, Christine Murabito

Proceedings Volume 6349, 634946 (2006) https://doi.org/10.1117/12.686706

KEYWORDS: Waveguides, Capacitance, Critical dimension metrology, Metrology, Dielectrics, Cadmium, Photomasks, Scanning electron microscopy, Bridges, Molecular bridges

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Proceedings Article | 24 March 2006 Paper

Traceable atomic force microscope dimensional metrology at NIST

Ronald Dixson, Ndubuisi Orji, Joseph Fu, Michael Cresswell, Rich Allen, Will Guthrie

Proceedings Volume 6152, 61520P (2006) https://doi.org/10.1117/12.656803

KEYWORDS: Calibration, Metrology, Standards development, Atomic force microscopy, Dimensional metrology, Atomic force microscope, Prototyping, Error analysis, Crystals, Photomasks

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Proceedings Article | 10 May 2005 Paper

CD reference features with sub-five nanometer uncertainty

M. Cresswell, R. Dixson, W. Guthrie, R. Allen, C. Murabito, B. Park, J. Martinez de Pinillos, A. Hunt

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.606807

KEYWORDS: Atomic force microscopy, Calibration, Critical dimension metrology, Cadmium, Metrology, Semiconducting wafers, Platinum, Silicon, Scanning electron microscopy, Etching

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Proceedings Article | 10 May 2005 Paper

CD-AFM reference metrology at NIST and SEMATECH

Ronald Dixson, Joseph Fu, Ndubuisi Orji, William Guthrie, Richard Allen, Michael Cresswell

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601972

KEYWORDS: Metrology, Calibration, Atomic force microscopy, Standards development, Transmission electron microscopy, Critical dimension metrology, Silicon, Scanning electron microscopy, Semiconductor manufacturing, Crystals

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Proceedings Article | 16 July 2002 Paper

Using carbon nanotube cantilevers in scanning probe metrology

Rudy Schlaf, Yusuf Emirov, Jay Bieber, Arun Sikder, J. Kohlscheen, Deron Walters, Mohammed Islam, Bhavik Metha, Z. Ren, Terri Shofner, Benjamin Rossie, Michael Cresswell

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473496

KEYWORDS: Code division multiplexing, Atomic force microscopy, Nickel, Carbon nanotubes, Manufacturing, Critical dimension metrology, Scanning probe metrology, Ion beams, Scanning electron microscopy, Plasma enhanced chemical vapor deposition

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Proceedings Article | 16 July 2002 Paper

CD reference materials for sub-10th um applications

Michael Cresswell, E. Hal Bogardus, J.V. Martinez de Pinillos, Marylyn Bennett, Richard Allen, William Guthrie, Christine Murabito, Barbara am Ende, Loren Linholm

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473450

KEYWORDS: Cadmium, Silicon, Semiconducting wafers, Resistance, Oxides, Critical dimension metrology, Optical lithography, Etching, Calibration, Ions

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Proceedings Article | 11 March 2002 Paper

Noncontact electrical critical dimensions metrology sensor for chrome photomasks

Nadine Guillaume, Markku Lahti, Michael Cresswell, Richard Allen, Loren Linholm, Mona Zaghloul

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458365

KEYWORDS: Sensors, Photomasks, Capacitance, Metrology, Critical dimension metrology, Ceramics, Photoresist materials, Etching, Silver, Electronics

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Proceedings Article | 2 June 2000 Paper

Linewidth measurement intercomparison on a BESOI sample

John Villarrubia, Andras Vladar, Jeremiah Lowney, Michael Postek, Richard Allen, Michael Cresswell, Rathindra Ghoshtagore

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386488

KEYWORDS: Scanning electron microscopy, Bridges, Silicon, Statistical modeling, Instrument modeling, Oxides, Contamination, Image segmentation, Resistance, Crystals

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Proceedings Article | 2 June 2000 Paper

Comparison of electrical CD measurements and cross-section lattice-plane counts of submicrometer features replicated in (100) silicon-on-insulator material

Michael Cresswell, John Bonevich, Thomas Headley, Richard Allen, Lucille Giannuzzi, Sarah Everist, Rathindra Ghoshtagore, Patrick Shea

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386479

KEYWORDS: Silicon, Resistors, Scanning electron microscopy, Cadmium, Semiconducting wafers, Image segmentation, Metrology, Etching, Critical dimension metrology, Micromachining

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Electrical test structures of the type known as cross-bridge resistors have been patterned in (100) epitaxial silicon material that was grown on bonded and etched-back silicon-on- insulator (BESOI) substrates. The critical dimensions (CDs) of a selection of their reference segments have been measured electrically and by lattice-plane counting and they have been inspected by scanning-electron microscopy (SEM) cross-section imaging. The lattice-plane counting is performed on phase- contrast images made by high-resolution transmission-electron microscopy (HRTEM). The reference-segment features were aligned with <110> directions in the BESOI surface material. They were defined by a silicon micro-machining process which results in their sidewalls being nearly atomically planar and smooth and inclined at 54.737 degree(s) to the surface (100) plane of the substrate. This (100) implementation may usefully complement the attributes of the previously reported vertical-sidewall implementation for selected reference-material applications. The HRTEM, and electrical CD (ECD) linewidth measurements that are made on BESOI features of various drawn dimensions on the same substrate are being investigated to determine the feasibility of a CD traceability path that combines the low cost, robustness, and repeatability of the ECD technique and the absolute measurement of the HRTEM lattice-plane counting technique. Other novel aspects of the (100) Silicon-On- Insulator (SOI) implementation that are reported here are the ECD test-structure architecture and the making of HRTEM lattice-plane counts from both cross-sectional, as well as top-down, imaging of the reference features. This paper describes the design details and the fabrication of the cross- bridge resistor test structure. The long-term goal is to develop a technique for the determination of the absolute dimensions of the trapezoidal cross sections of the cross- bridge resistors's reference segments, as a prelude to making them available for dimensional reference applications.

Proceedings Article | 14 June 1999 Paper

Intercomparison of SEM, AFM, and electrical linewidths

John Villarrubia, Ronald Dixson, Samuel Jones, Jeremiah Lowney, Michael Postek, Richard Allen, Michael Cresswell

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350846

KEYWORDS: Scanning electron microscopy, Atomic force microscopy, Bridges, Image segmentation, Silicon, Resistance, Crystals, Oxides, Metrology, Contamination

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Proceedings Article | 8 June 1998 Paper

Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications

Richard Allen, Rathindra Ghoshtagore, Michael Cresswell, Loren Linholm, Jeffry Sniegowski

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308722

KEYWORDS: Semiconducting wafers, Silicon, Resistance, Oxides, Critical dimension metrology, Resistors, Information operations, Bridges, Metrology, Photomasks

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Proceedings Article | 21 May 1996 Paper

Electrical test structures replicated in silicon-on-insulator material

Michael Cresswell, Jeffry Sniegowski, Rathindra Ghoshtagore, Richard Allen, Loren Linholm, John Villarrubia

Proceedings Volume 2725, (1996) https://doi.org/10.1117/12.240117

KEYWORDS: Silicon, Etching, Semiconducting wafers, Metrology, Photomasks, Crystals, Oxides, Silicon films, Calibration, Optical lithography

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Proceedings Article | 1 July 1994 Paper

Microelectronic test structures for feature placement and electrical linewidth metrology

Loren Linholm, Richard Allen, Michael Cresswell

Proceedings Volume 10274, 1027407 (1994) https://doi.org/10.1117/12.187462

KEYWORDS: Microelectronics, Metrology, Control systems, Manufacturing, Materials processing, Semiconductor manufacturing, Optical lithography

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Proceedings Article | 1 May 1994 Paper

Electrical test structure for overlay metrology referenced to absolute length standards

Michael Cresswell, William Penzes, Richard Allen, Loren Linholm, Colleen Ellenwood, E. Clayton Teague

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174149

KEYWORDS: Overlay metrology, Photomasks, Interferometers, Lithography, Algorithm development, Feature extraction

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Showing 5 of 22 publications

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