There is an increasing need for single-spatial-mode, edge-emitting semiconductor lasers with reliable cw output power of around 1 W for applications such as pumps for rare-earth-doped fiber amplifiers and free-space communications. The design of respective devices is still a challenging task for experimenters, and software can assist very much in doing analyses of potentially perspective designs. We have developed a 3D numerical code supplied with a user-friendly interface for active diode-laser structures, taking into account light diffraction and carrier diffusion. The Watt-Ampere characteristics are calculated by changing the drive current density in the equation for the carrier-number density. To evaluate a single-mode stability limit, a procedure is developed to calculate 3-5 higher order optical modes on a 'frozen background': gain, carrier-induced index variation, as produced by the operated mode at a fixed drive level. Modal gains of these modes are compared to the calculated threshold gains for each mode. Because of non-uniform gain saturation by the operated mode, modal gains for higher-order modes increase with drive current due to beneficial overlap of their fields with the gain. When one of the higher-order modes approaches its threshold, this puts an upper limit for stable single-mode operation. A graphical interface allows for viewing near- and far-field patterns of any mode in the form of 3D surfaces or contour-plots. Scanning of profiles of mode intensity in an arbitrary cross section in the output plane and in far-field zone is available, too. Results of analyses of a number of published designs are reported.
While high-powered broad area lasers emitting between 915nm and 975nm are required for pumping Er+ and Yb+ doped dual clad fiber lasers and amplifiers, the single mode 980nm lasers are used for pumping EDFAs. We report on the performance and a systematic reliability assessment of Alfalight’s first generation Al-free multimode laser diodes with 100µm aperture and 2mm cavity length emitting between 950nm and 980nm. Data from 120 devices in five different multi-cell conditions show median life due to wear-out failure to be over 75.5 years. In addition, over 1,307,600 device-hours of accelerated lifetest data at 3A and a 70C heatsink temperature have been accumulated demonstrating 55 FIT (60% confidence level) at a 2W and 25C operation condition. We also present results from a packaged multimode diode laser with wavelength stabilized at 972nm with a spectral FWHM of 0.3nm demonstrating the capability to use such a device for pumping Er+ and Yb+ doped fibers near the more efficient 975nm portion of the absorption spectrum. Advances made in anti-resonant reflective optical waveguide (ARROW) type single mode diode lasers and the advantages over the conventional positive index guided ridge waveguide type lasers will be discussed. Single mode operation of ARROW single mode laser up to 450mW (ex-facet) was achieved. Results from the facet passivation studies showing successful implementation of non-absorbing mirror (NAM) due to quantum well intermixing using Si implantation in Al-free diode lasers will also be discussed. We have demonstrated reliable operation in excess of 5500 hours in index-guided Al-free diode lasers at a constant power of 500mW at a heatsink temperature of 25C.
We theoretically demonstrate that a properly placed distributed-feedback grating can provide spatial-mode discrimination in phase-locked antiguided arrays. These novel devices are particularly attractive because both spatial-mode and frequency selection are accomplished in an index-guided structure using a single mechanism that is virtually independent of thermal instabilities and drive level. The analysis includes the effects of facet coatings and accounts for the random nature of the cleave locations relative to the grating phase.
Antiresonant reflecting optical waveguide (ARROW) lasers are novel index-antiguided structures that can achieve reliable high (approximately equal to 1 W) single-spatial-mode output power. Result from 0.98 micrometer-wavelength three-core ARROW-type InGaAs/InGaAsP/InGaP diode lasers, including near-diffraction-limited beam operation to 0.7 W peak-pulsed, and 0.4 W cw are discussed.
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