Mr. Michael Pomerantsev Profile

Michael Pomerantsev

at D2S Inc

SPIE Involvement:

Author

Publications (6)

SPIE Journal Paper | 6 February 2024

Make the impossible possible: use variable-shaped beam mask writers and curvilinear full-chip inverse lithography technology for 193i contacts/vias with mask-wafer co-optimization

Linyong (Leo) Pang, Sha Lu, Ezequiel Vidal Russell, Yang Lu, Michael Lee, Jennefir Digaum, Ming-Chuan Yang, P. Jeffrey Ungar, Michael Pomerantsev, Mariusz Niewczas, Kechang Wang, Bo Su, Michael Meyer, Aki Fujimura

JM3, Vol. 23, Issue 01, 011207, (February 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011207

KEYWORDS: Vestigial sideband modulation, Semiconducting wafers, Optical proximity correction, SRAF, Critical dimension metrology, Lithography, Printing, Design, Scanning electron microscopy, Photomask technology

Read Abstract +

Proceedings Article | 7 October 2020 Presentation + Paper

Enabling faster VSB writing of 193i curvilinear ILT masks that improve wafer process windows for advanced memory applications

Linyong (Leo) Pang, Ezequiel Russell, Bill Baggenstoss, Yang Lu, Michael Lee, Jennefir Digaum, Ming-Chuan Yang, Ryan Pearman, P. Jeffrey Ungar, Lu Sha, Ali Bouaricha, Michael Pomerantsev, Mariusz Niewczas, Kechang Wang, Bo Su, Michael Meyer, Aki Fujimura

Proceedings Volume 11518, 115180W (2020) https://doi.org/10.1117/12.2579729

Read Abstract +

Proceedings Article | 31 March 2020 Presentation + Paper

TrueMask ILT MWCO: full-chip curvilinear ILT in a day and full mask multi-beam and VSB writing in 12 hrs for 193i

Linyong (Leo) Pang, P. Jeffrey Ungar, Ali Bouaricha , Lu Sha, Michael Pomerantsev, Mariusz Niewczas, Kechang Wang, Bo Su, Ryan Pearman, Aki Fujimura

Proceedings Volume 11327, 113270K (2020) https://doi.org/10.1117/12.2554867

KEYWORDS: Photomasks, Semiconducting wafers, SRAF, Lithography, Optical proximity correction, Extreme ultraviolet, Critical dimension metrology, Mask making

Read Abstract +

Proceedings Article | 25 October 2019 Paper

Five deep learning recipes for the mask-making industry

Ajay Baranwal, Mike Meyer, Thang Nguyen, Suhas Pillai, Noriaki Nakayamada, Mikael Wahlsten, Aki Fujimura, Mariusz Niewczas, Michael Pomerantsev

Proceedings Volume 11148, 1114809 (2019) https://doi.org/10.1117/12.2538440

KEYWORDS: Photomasks, Scanning electron microscopy, Image segmentation, Computer aided design, Neural networks, Manufacturing, Data modeling, Network architectures, Image processing, Electronics

Read Abstract +

Proceedings Article | 13 July 2017 Paper

Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers

Linyong Pang, Yutetsu Takatsukasa, Daisuke Hara, Michael Pomerantsev, Bo Su, Aki Fujimura

Proceedings Volume 10454, 1045407 (2017) https://doi.org/10.1117/12.2281110

KEYWORDS: Photomasks, Model-based design, Lithography, Computational lithography, Mask making, Process modeling, Optical proximity correction, Etching, Modulation, Convolution, Image processing

Read Abstract +

Proceedings Article | 13 July 2017 Paper

Simulation-based MDP verification for leading-edge masks

Bo Su, Oleg Syrel, Michael Pomerantsev, Kazuyuki Hagiwara, Ryan Pearman, Leo Pang, Aki Fujimara

Proceedings Volume 10454, 1045409 (2017) https://doi.org/10.1117/12.2280841

KEYWORDS: Photomasks, Computer simulations, Process modeling, Model-based design, Data modeling, Optical proximity correction, Electron beam lithography, Reactive ion etching, Computer aided design, Mask making

Read Abstract +

For IC design starts below the 20nm technology node, the assist features on photomasks shrink well below 60nm and the printed patterns of those features on masks written by VSB eBeam writers start to show a large deviation from the mask designs. Traditional geometry-based fracturing starts to show large errors for those small features. As a result, other mask data preparation (MDP) methods have become available and adopted, such as rule-based Mask Process Correction (MPC), model-based MPC and eventually model-based MDP.

The new MDP methods may place shot edges slightly differently from target to compensate for mask process effects, so that the final patterns on a mask are much closer to the design (which can be viewed as the ideal mask), especially for those assist features. Such an alteration generally produces better masks that are closer to the intended mask design. Traditional XOR-based MDP verification cannot detect problems caused by eBeam effects. Much like model-based OPC verification which became a necessity for OPC a decade ago, we see the same trend in MDP today.

Simulation-based MDP verification solution requires a GPU-accelerated computational geometry engine with simulation capabilities. To have a meaningful simulation-based mask check, a good mask process model is needed. The TrueModel® system is a field tested physical mask model developed by D2S. The GPU-accelerated D2S Computational Design Platform (CDP) is used to run simulation-based mask check, as well as model-based MDP. In addition to simulation-based checks such as mask EPE or dose margin, geometry-based rules are also available to detect quality issues such as slivers or CD splits. Dose margin related hotspots can also be detected by setting a correct detection threshold.

In this paper, we will demonstrate GPU-acceleration for geometry processing, and give examples of mask check results and performance data. GPU-acceleration is necessary to make simulation-based mask MDP verification acceptable.

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years