D. Higginbottom, A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. Brunelle, E. MacQuarrie, N. Lee-Hone, M. Ruether, M. Kazemi, A. T. Kurkjian, M. L. Thewalt, S. Simmons
The performance of modular, networked quantum technologies will be contingent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spins, and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we present recent advances with T centre devices towards high-performance, large-scale distributed quantum technologies based upon T centres in silicon.
We present an experimental and theoretical investigation of coupling between two
identical GaAs/AlGaAs quantum wells separated by a narrow AlGaAs barrier. The
optical properties of this heterostructure were characterized with photoluminescence
(PL), time resolved PL, and PL excitation spectroscopies with and without the application
of electric fields and other external perturbations. Experimental results for level
splittings and Stark shifts agreed well with calculations derived from a simple model.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.