Mr. Minwoo Park Profile

Minwoo Park

Telecom Manager at SK Hynix

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Publications (3)

Proceedings Article | 24 March 2016 Paper

Enhacement of intrafield overlay using a design based metrology system

Gyoyeon Jo, Sunkeun Ji, Shinyoung Kim, Hyunwoo Kang, Minwoo Park, Sangwoo Kim, Jungchan Kim, Chanha Park, Hyunjo Yang, Kotaro Maruyama, Byungjun Park

Proceedings Volume 9778, 97781J (2016) https://doi.org/10.1117/12.2218937

KEYWORDS: Overlay metrology, Metrology, Optical testing, Defect inspection, Inspection, Defect detection, Control systems, Semiconductors, Databases, Distortion, Chemical mechanical planarization, Etching

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Proceedings Article | 19 March 2015 Paper

Advanced overlay analysis through design based metrology

Sunkeun Ji, Gyun Yoo, Gyoyeon Jo, Hyunwoo Kang, Minwoo Park, Jungchan Kim, Chanha Park, Hyunjo Yang, Donggyu Yim, Kotaro Maruyama, Byungjun Park, Masahiro Yamamoto

Proceedings Volume 9424, 942415 (2015) https://doi.org/10.1117/12.2085464

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Data analysis, Etching, Optical lithography, Double patterning technology, Imaging systems, Error analysis, Distortion

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Proceedings Article | 18 March 2015 Paper

Layout optimization with assist features placement by model based rule tables for 2x node random contact

Jinhyuck Jun, Minwoo Park, Chanha Park, Hyunjo Yang, Donggyu Yim, Munhoe Do, Dongchan Lee, Taehoon Kim, Junghoe Choi, Gerard Luk-Pat, Alex Miloslavsky

Proceedings Volume 9427, 94270D (2015) https://doi.org/10.1117/12.2085460

KEYWORDS: Atrial fibrillation, Semiconducting wafers, Photomasks, Critical dimension metrology, Optical proximity correction, Nanoimprint lithography, Lithography, Printing, SRAF, Manufacturing

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As the industry pushes to ever more complex illumination schemes to increase resolution for next generation memory and logic circuits, sub-resolution assist feature (SRAF) placement requirements become increasingly severe. Therefore device manufacturers are evaluating improvements in SRAF placement algorithms which do not sacrifice main feature (MF) patterning capability. There are known-well several methods to generate SRAF such as Rule based Assist Features (RBAF), Model Based Assist Features (MBAF) and Hybrid Assisted Features combining features of the different algorithms using both RBAF and MBAF. Rule Based Assist Features (RBAF) continue to be deployed, even with the availability of Model Based Assist Features (MBAF) and Inverse Lithography Technology (ILT). Certainly for the 3x nm node, and even at the 2x nm nodes and lower, RBAF is used because it demands less run time and provides better consistency. Since RBAF is needed now and in the future, what is also needed is a faster method to create the AF rule tables. The current method typically involves making masks and printing wafers that contain several experiments, varying the main feature configurations, AF configurations, dose conditions, and defocus conditions – this is a time consuming and expensive process. In addition, as the technology node shrinks, wafer process changes and source shape redesigns occur more frequently, escalating the cost of rule table creation. Furthermore, as the demand on process margin escalates, there is a greater need for multiple rule tables: each tailored to a specific set of main-feature configurations. Model Assisted Rule Tables(MART) creates a set of test patterns, and evaluates the simulated CD at nominal conditions, defocused conditions and off-dose conditions. It also uses lithographic simulation to evaluate the likelihood of AF printing. It then analyzes the simulation data to automatically create AF rule tables. It means that analysis results display the cost of different AF configurations as the space grows between a pair of main features. In summary, model based rule tables method is able to make it much easier to create rule tables, leading to faster rule-table creation and a lower barrier to the creation of more rule tables.

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