Rigorous 3D process and device simulation has been applied to transistors with curved channel shapes that are inevitable
due to the optical proximity effects. The impact of channel curvature on the transistor performance has been
benchmarked using the universal Ion/Ioff coordinates. Systematic study of the different non-rectangular channel shapes
included straight lines at an angle different than 90 degrees and concave and convex shapes with different curvature
radii. The study reveals that any deviation from the ideal rectangular shape affects transistor performance. The amount
of enhancement or degradation depends on particular shape, with on current, threshold voltage, and off current
responding very differently to the same shape variation. The type and amount of performance variation is very different
for the distorted channel length (i.e. poly gate shape) vs distorted channel width (i.e. active layer shape). Degradation of
over 50% in the on current at a fixed off current has been observed in the most unfavorable cases for each of the two
critical mask layers. On the other hand, a desirable over 3x off current reduction at a fixed on current can be achieved by
selecting a beneficial channel shape.
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