Dr. Myung-Soo Han Profile

Dr. Myung-Soo Han

at Korea Photonics Technology Institute

SPIE Involvement:

Author

Area of Expertise:

uncooled IR detectors , ZnO epilayers & Characteristics , MEMS Probe Unit , Cooled IR Detector

Websites:

Company Website

Publications (11)

Proceedings Article | 24 June 2014 Paper

A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing

Myung-Soo Han, Dae Hyeon Kim, Hang Ju Ko, Jae Chul Shin, Hyo Jin Kim, Do Gun Kim

Proceedings Volume 9070, 90701X (2014) https://doi.org/10.1117/12.2049513

KEYWORDS: Oxygen, Thin films, Multilayers, Microbolometers, Resistance, Annealing, Vanadium, Sensors, Oxides, Sputter deposition

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Proceedings Article | 11 June 2013 Paper

Low-cost compact thermal imaging sensors for body temperature measurement

Myung-Soo Han, Seok Man Han, Hyo Jin Kim, Jae Chul Shin, Mi Sook Ahn, Hyung Won Kim, Yong Hee Han

Proceedings Volume 8704, 87041O (2013) https://doi.org/10.1117/12.2015662

KEYWORDS: Thermography, Semiconducting wafers, Sensors, Infrared sensors, Microbolometers, Bolometers, Wafer bonding, Body temperature, Packaging, Metals

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Proceedings Article | 1 March 2010 Paper

Improvement in lifetime of green organic light-emitting device

Hyun Chul Ki, Seon Hoon Kim, Doo Gun Kim, Hyun Jin Kim, Hang Ju Ko, Myung-Soo Han, Hwe Jong Kim, Kyung Jin Hong

Proceedings Volume 7599, 75991M (2010) https://doi.org/10.1117/12.841699

KEYWORDS: Organic light emitting diodes, Silica, Silicon films, Organic materials, Oxygen, Metals, Etching, Reactive ion etching, Electrodes, Telescopic pixel displays

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Proceedings Article | 24 February 2010 Paper

Optical properties in InGaAs quantum dots on SiO2-patterned vicinal (001) GaAs substrate

Hyo Jin Kim, Sou Young Yoo, Hang Ju Ko, Myung Soo Han, Doo Gun Kim, Swook Han, Seon Hoon Kim, Hyun Chul Ki

Proceedings Volume 7610, 761012 (2010) https://doi.org/10.1117/12.841706

KEYWORDS: Gallium arsenide, Quantum dots, Gallium, Scanning electron microscopy, Optical properties, Silica, Indium gallium arsenide, Wet etching, Helium neon lasers, Photonic devices

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Proceedings Article | 15 February 2010 Paper

Structural and optical properties of TiO2 thin films annealed in O2 and N2 gases flow

Seon Hoon Kim, Tae Un Kim, Doo Gun Kim, Hyun Chul Ki, Geum-Yoon Oh, Hyo Jin Kim, Hang Ju Ko, Myung-Soo Han, Swook Hann, Hwe Jong Kim

Proceedings Volume 7603, 76031U (2010) https://doi.org/10.1117/12.841681

KEYWORDS: Thin films, Oxygen, Annealing, Transmittance, Glasses, Crystals, Thin film deposition, Optical properties, Gases, Titanium dioxide

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Proceedings Article | 23 January 2010 Paper

Optical characteristics of surface plasmon resonance based on ZnO and metallic nanograting structures

Doo Gun Kim, Seon Hoon Kim, Hyun Chul Ki, Hyo Jin Kim, Hang Ju Ko, Myung-Soo Han, Swook Hann, Tae Un Kim, Hwe Jong Kim, Geum-Yoon Oh, Young Wan Choi

Proceedings Volume 7608, 76081H (2010) https://doi.org/10.1117/12.841444

KEYWORDS: Zinc oxide, Surface plasmons, Sensors, Finite-difference time-domain method, Dielectrics, Gold, Metals, Prisms, Reflectivity, Resonance enhancement

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Proceedings Article | 12 November 2001 Paper

Single-element PV and PC infrared detectors for medical applications

Young-Ho Kim, Myung-Soo Han, Min-Suk Jeoung, Nam-Su Yim, Suk-Ryong Hahn

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448179

KEYWORDS: Sensors, Thermography, Photovoltaics, Infrared detectors, Infrared radiation, Imaging systems, Mid-IR, Image quality, Semiconducting wafers, Infrared sensors

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Proceedings Article | 26 October 1998 Paper

ECR Ar/CH4/H2 plasma damage in HgCdTe

Eui-Tae Kim, Myung-Soo Han, J. Kwon, Suk-Ryong Hahn, Kyung Song, Sang Lee, Tae-Seok Lee, Y. Lee, Jae Mook Kim

Proceedings Volume 3436, (1998) https://doi.org/10.1117/12.328002

KEYWORDS: Mercury, Etching, Plasma, Ions, Mercury cadmium telluride, Hydrogen, Plasma etching, Liquid phase epitaxy, Capacitance, Dry etching

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Proceedings Article | 26 October 1998 Paper

Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics

TaeHoon Kim, Myung-Soo Han, Min-Suk Jeoung, J. Kwon, Nam-Su Yim, Gyumg Lee, Eui-Tae Kim, Suk-Ryong Hahn, H. Kwon, Y. Bin, Y. Jeoung, Jae Mook Kim

Proceedings Volume 3436, (1998) https://doi.org/10.1117/12.328003

KEYWORDS: Sensors, Metals, Wet etching, Infrared detectors, Etching, Oxides, Dry etching, Chemical elements, Gold, Nickel

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Proceedings Article | 8 April 1998 Paper

Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE

Tae Kang, J. Leem, Y. Hou, H. Jeon, J. Hyun, Ho-Young Lee, Myung-Soo Han, Suk-Ryong Hahn

Proceedings Volume 3287, (1998) https://doi.org/10.1117/12.304488

KEYWORDS: Crystals, Silicon, Mercury cadmium telluride, Luminescence, Annealing, Sensors, Infrared detectors, Radon, Physics, Electronics

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Proceedings Article | 7 July 1997 Paper

Effects of illumination wavelength on the accuracy of optical overlay metrology

Jae-Seong Han, Hak Kim, Jeong-Lim Nam, Myung-Soo Han, Soon-Kwon Lim, Shimon Yanowitz, Nigel Smith, Andrew Smout

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276027

KEYWORDS: Overlay metrology, Semiconducting wafers, Manufacturing, Optical lithography, Error analysis, Wafer-level optics, Optical testing, Etching, Quality measurement

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As the integration density in the manufacturing of IC's increases and tighter design rules are implemented, the accuracy of overlay in the photolithography process is becoming all the more important. Consequently, investigation and characterization of the accuracy (as well as precision) of the overlay measurement are being required to insure that the overlay metrology tool qualifies for the new technologies. In this paper, we analyze the relationship between wafer substrate types and the respective characteristic overlay measurement errors associated with them. We compare results using different illumination wavelengths in the overlay tool. We define the Wafer Induced Shift (WIS) contribution to the measurement accuracy error and introduce a metric for it. And we analyze the relationship between the TIS and WIS. We show that the wavelength of the optical overlay measurement (OL, for short) should be fitted separately to each of the various kinds of overlay measurement targets, or marks. Buried type targets, covered by transparent materials, for which the measurement is made through the transparent interlayer, benefit from wavelength selection due to the possible improvement in contrast associated with an interference effect. Open type targets, on the other hand, in which the measurement signal is collected off the substrate shape itself, do not benefit from that. There is another problem to consider, however. Such targets may show a considerable WIS, even thought TIS and precision are good both before and after etch. The WIS error can be as high as 100 nm. This could create serious OL problem and it means that TIS and precision are not enough to characterize the quality of measurement, and WIS is equally important, it not more so. We look into the causes of WIS in the substrate shape, overlay mark design and fabrication method. We show that with careful selection of illumination wavelength, some layers produce no WIS. On the other layers WIS remains a problem and other methods are still required to control it.

Showing 5 of 11 publications

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