Although millimeter wave (mmWave) wireless communication has the advantages of huge bandwidth, narrow beam and high transmission quality, it also suffers from severe signal attenuation caused by atmospheric absorption and short distance transmission. Therefore, the equalization techniques are normally required in mmWave links. In this paper, a continuous time linear equalization (CTLE) with variable gain for mmWave receiver was designed in IHP 130 nm SiGe BiCMOS process. The CTLE circuit incorporates an active equalizer with negative capacitance converter and a variable gain amplifier (VGA). The negative capacitance structure was used to increase the peaking gain at Nyquist frequency to compensate for the high frequency loss, and the VGA provides an adjustable low frequency gain. The simulation results demonstrate that the tuning capabilities of 12 dB and 5 dB can be respectively achieved for low frequency and high frequency, and the equalization performance is verified for two different channels at 25 Gb/s NRZ data streams.
High speed data links with low jitter and large bandwidth are essential for millimeter-wave (mmWave) communications. In this paper, an analog-domain 4-level pulse amplitude modulation (PAM4) baseband demodulation circuit with low data jitter and ultrahigh data rate was designed. In order to suppress the jitter caused by inter-symbol interference (ISI), a local feedback loop was introduced to extend the bandwidth of threshold slicer. A novel clock and data recovery (CDR) circuit architecture was proposed and optimized to extract the clock pulses with low jitter, thus improving the recovered data quality. A symmetric decoder performs an XOR logic operation to recover the least significant bit (LSB) of PAM4 signal, while the most significant bit (MSB) can be directly obtained from the middle-lane after retiming. The whole demodulation circuit was optimized based on IHP 130nm SiGe BiCMOS technology, and the simulation results indicate that our designed circuit can decode single-channel 50 Gbit/s PAM4 data streams into two 25 Gbit/s NRZ signals, and the peak-to-peak jitter is less than 0.1 UI.
Millimeter-wave (mmWave) technology has been employed in many applications due to abundant bandwidth resources and high interference immunity such as telecommunication, automotive radars, and imaging. In this paper, a mmWave transmitter link incorporating PAM4 modulation, resonant tunneling diode (RTD) based oscillator, power amplifier and antenna was proposed. To achieve good linearity and alleviate inter-symbol interference (ISI) caused by channel loss simultaneously, a PAM4 modulation circuit utilizing voltage mode driver and 2-tap pre-emphasis was designed and optimized in TSMC 28 nm CMOS process. The simulation results show that our PAM4 modulation circuit operates properly at 40Gb/s with a differential output swing of up to 800 mVpp under a supply voltage of 0.9 V. The overall power consumption is about 51.3 mW, corresponding to an energy efficiency of 1.28 pJ/bit.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.