KEYWORDS: Polymers, Stochastic processes, Temperature metrology, Chemical elements, Crystals, Carbon, Dielectrics, Signal processing, Annealing, Solid state physics
Stochastic threshold devices using a trap-filling transition (TFT) coupled with molecular dynamics in poly(3-alkylthiophene)s were fabricated as potential key devices for noise-driven bioinspired sensors and information processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene) ((RR−P3DT) (thickness: 100 nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω−2-type (if VVTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for TFT, respectively. The noise generation is due to the TFT associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition (ODT). At 298 K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene). The quasi-stochastic property is employed to a stochastic one-directional signal transmitting device using optical-electric conversion. The dynamics of ODT for powder samples were also investigated by differential scanning calorimetry measurements and high-resolution solid-state C13 nuclear magnetic resonance spectroscopy, and the correlation of the molecular structure and dynamics with electric properties was discussed.
Stochastic threshold devices using trap-filling transition coupled with molecular dynamics in poly(3-alkyl thiophene)s [P3ATs] were fabricated as potential key devices for noise-driven bio-inspired sensors and infor- mation processors. This article deals with variable-temperature direct current conductivity and alternating current impedance measurements for vertical-type device elements of Au/regioregular poly(3-decylthiophene)
[RR-P3DT] (thickness:100nm)/Au, which show multiple conducting states and quasi-stochastic transitions between these states. Noise measurements indicate the ω-2-type (if V < VTFT = 10V) and ω-1-type (if V > VTFT) power spectral densities, where V and VTFT are an applied voltage and the voltage for trap-filling transition(TFT),respectively. The noise generation is due to TFT that associated with twist dynamics of π-conjugated polymers near the order-disorder phase transition. At 298K, the quasi-stochastic behavior is more noticeable for RR-P3DT than poly(3-hexylthiophene) [RR-P3HT]. The dynamics of the order-disorder phase transition (ODT) for powder samples were also investigated by differential scanning calorimetry (DSC) measurements and high-resolution solid-state C NMR spectroscopy, and the correlation of molecular structure
and dynamics with electric properties was discussed.
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