Dr. Nassim Rahimi Profile

Dr. Nassim Rahimi

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Publications (8)

Proceedings Article | 4 March 2019 Presentation + Paper

An economical solution for high-throughput low-noise multi-channel spectroscopy

Nassim Rahimi, Alain Price, Xinhua Pan, Askari Ghasempour, Francis Ndi

Proceedings Volume 10925, 109250P (2019) https://doi.org/10.1117/12.2510901

KEYWORDS: Spectroscopy, Charge-coupled devices, Spectrographs, Interference (communication), Signal to noise ratio, Luminescence, Stray light, Transmittance, Absorbance

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Proceedings Article | 4 March 2019 Presentation + Paper

Influence of numerical aperture (NA) on micro-reflectance spectroscopy

Xinhua Pan, Nassim Rahimi, Alain Price, Askari Ghasempour, Francis Ndi

Proceedings Volume 10925, 109250S (2019) https://doi.org/10.1117/12.2510619

KEYWORDS: Reflectivity, Objectives, Silicon, Spectroscopy, Semiconducting wafers, Scattering, Molybdenum, Raman spectroscopy, Reflection, Microscopy

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Proceedings Article | 4 March 2019 Presentation + Paper

Determination of extremely low concentration of sucrose in aqueous solution by Raman spectroscopy

Nassim Rahimi, Alain Price, Xinhua Pan, Askari Ghasempour, Francis Ndi

Proceedings Volume 10881, 108810L (2019) https://doi.org/10.1117/12.2510078

KEYWORDS: Raman spectroscopy, Spectroscopy, Molecules, Chemical analysis, Statistical analysis, Laser scattering, Crystals, Charge-coupled devices, Nondestructive evaluation, Refractive index

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Proceedings Article | 1 March 2019 Presentation + Paper

Investigation of the device degradation for commercial light-emitting diodes (LEDs) using spatially and time-resolved electro- and photoluminescence

Nassim Rahimi, Alain Price, Xinhua Pan, Askari Ghasempour, Francis Ndi

Proceedings Volume 10918, 109180O (2019) https://doi.org/10.1117/12.2510846

KEYWORDS: Light emitting diodes, Electroluminescence, Luminescence, Indium gallium nitride, Aluminium gallium indium phosphide, Indium, Aluminum, Gallium, Electrons, Semiconductors

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Proceedings Article | 23 September 2015 Presentation + Paper

Emitter thickness optimization for GaSb thermophotovoltaic cells grown by molecular beam epitaxy

Shaimaa Abdallah, Daniel Herrera, Benjamin Conlon, Nassim Rahimi, Luke Lester

Proceedings Volume 9562, 95620L (2015) https://doi.org/10.1117/12.2187487

KEYWORDS: Gallium antimonide, Doping, Electrons, Molecular beam epitaxy, Device simulation, Solar cells, Semiconductors, Instrument modeling, Resistance, Photons

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Proceedings Article | 16 March 2015 Paper

GaSb thermophotovoltaics: current challenges and solutions

N. Rahimi, D. Herrera, A. Aragon, D. Shima, O. Romero, T. Rotter, T. Busani, O. Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 9358, 935816 (2015) https://doi.org/10.1117/12.2079635

KEYWORDS: Gallium antimonide, Diodes, Crystals, Indium gallium arsenide antimonide, Annealing, Ion implantation, Beryllium, Scanning electron microscopy, Resistance, Gallium

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Proceedings Article | 7 March 2014 Paper

Beryllium implant activation and damage recovery study in n-type GaSb

N. Rahimi, M. Behzadirad, Emma Renteria, D. Shima, Ayse Muniz, T. Busani, Olga Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 8981, 89811Q (2014) https://doi.org/10.1117/12.2040276

KEYWORDS: Gallium antimonide, Annealing, Beryllium, Crystals, Diodes, Semiconducting wafers, Doping, Antimony, Ions, Atomic force microscopy

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Proceedings Article | 25 March 2013 Paper

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

N. Rahimi, A. Aragon, O. Romero, D. Kim, N. B. Traynor, T. Rotter, G. Balakrishnan, S. Mukherjee, L. Lester

Proceedings Volume 8620, 86201K (2013) https://doi.org/10.1117/12.2003392

KEYWORDS: Gold, Gallium antimonide, Platinum, Germanium, Annealing, Gallium arsenide, Palladium, Resistance, Nickel, Temperature metrology

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Showing 5 of 8 publications

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