The low-frequency noise behavior of nanoscaled fully-depleted silicon-on insulator (SOI) finFETs is investigated and the perspectives of the noise method as a non-destructive diagnostic tool are revealed. The analysis of the (1/f)γ McWhorter noise observed at zero back-gate voltage showed that the trap concentration Not appears to be lower in the case of devices with HfSiON/SiO2 gate dielectric with the uniaxial strain in the inversion channel while the implementation of the HfO2/SiO2 gate stack and the biaxial strain tend to increase the value of Not. The analysis of the back-gate-induced (BGI) and linear kink effect (LKE) Lorentzian noise observed when the back interface is biased in accumulation allowed to estimate the values proportional to equivalent capacitance Ceq. Their front-gate voltage dependencies appear to be different for the devices with HfSiON/SiO2 and HfO2/SiO2 gate dielectric. Also the values proportional to density of the electron-valence-band tunneling currents jEVB were found for the devices studied. The influence of the strain-inducing techniques and gate dielectric type on the values discussed is revealed.
In this paper, some new front-back coupling noise effects are described. They have been revealed in partially-depleted SOI MOSFETs under conditions where an accumulating voltage is applied to the back gate. The first effect consists in the appearance of a Lorentzian component in the noise spectra of the front channel current. The time constant for such Lorentzians which are observed in weak and strong inversion decreases with increasing amplitude of the back-gate voltage and is independent of the front-gate voltage. The second effect is the decrease of the amplitude and the turn-over frequency of the LKE noise Lorentzians that are present in the noise spectra due to the EVB tunneling currents. It is shown that the Lorentzians generated under conditions of an accumulating back-gate voltage and the LKE Lorentzians are analogous by their nature. A model is considered whereby the source of the Lorentzians entering the noise spectra in the presence of an accumulating back-gate voltage is the Nyquist noise voltage generated across the p+-n+ junction induced by the back-gate voltage at the source/back gate. The capacitive character of the source-body impedance is the reason for the Lorentzian shape of the noise component generated by those Nyquist fluctuations
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.