Dr. Nikita Y. Gordeev Profile

Dr. Nikita Y. Gordeev

Senior Research Fellow at Ioffe Institute

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 20 April 2020 Presentation + Paper

Presentation + Paper

Optoelectronic devices with active region based on InGaAs/GaAs quantum well-dots

M. Maximov, N. Yu. Gordeev, Yu. Shernyakov, A. Payusov, S. Mintairov, N. Kalyuzhnyy, G. Kornyshov, A. Serin, A. Usikova, I. Gadzhiev, M. Kulagina, A. Nadtochiy, A. Zhukov

Proceedings Volume 11356, 113560A (2020) https://doi.org/10.1117/12.2554728

KEYWORDS: Edge emitting semiconductor lasers, Waveguides, Mode locking, Gallium arsenide, Semiconductor lasers, Optoelectronic devices, Light emitting diodes

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Proceedings Article | 19 February 2018 Paper

Paper

Thermally stable surface-emitting tilted wave laser

V. Shchukin, N. Ledentsov, V. Kalosha, M. Agustin, J. R. Kropp, M. Maximov, F. Zubov, Yu. M. Shernyakov, A. Payusov, N. Yu Gordeev, M. Kulagina, A. Zhukov

Proceedings Volume 10552, 1055207 (2018) https://doi.org/10.1117/12.2290565

KEYWORDS: Vertical cavity surface emitting lasers, Electroluminescence, Refractive index, Waveguides, Semiconductors, Near field

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Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in–plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs–based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non–alloyed metal grid. Rectangular-shaped ~400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of ~70 μm. 7 μm–wide metal stripes serve as non–alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL–like mode at ~854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field ~10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of ~840 nm at room temperature, emitting light at two symmetric lobes at tilt angles ~40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of ~1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in–plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM–polarized surface–trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L–I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Proceedings Article | 22 February 2017 Presentation + Paper

Presentation + Paper

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

N. Ledentsov, V. Shchukin, Yu. Shernyakov, M. Kulagina, A. Payusov, N. Yu. Gordeev, M. Maximov, N. Cherkashin

Proceedings Volume 10086, 100860L (2017) https://doi.org/10.1117/12.2252957

KEYWORDS: Semiconductor lasers, Gallium arsenide, Diodes, Laser damage threshold, Visible radiation, Electrons, Waveguides, High power lasers, Gallium, Aluminum, Quantum wells, Aluminium phosphide, Refractive index

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SPIE Journal Paper | 10 November 2016

Temperature characteristics of tilted wave lasers

Mikhail Maximov, Nikita Gordeev, Yuri Shernyakov, Alexey Payusov, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Alexey Zhukov, Vitaly Shchukin, Nikolai Ledentsov

OE, Vol. 55, Issue 11, 116102, (November 2016) https://doi.org/10.1117/12.10.1117/1.OE.55.11.116102

KEYWORDS: Waveguides, Refractive index, Active optics, Temperature metrology, Quantum wells, Continuous wave operation, Mirrors, Semiconductor lasers, Metalorganic chemical vapor deposition

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Proceedings Article | 4 March 2016 Paper

Paper

Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

N. Ledentsov, V. Shchukin, M. Maximov, N. Gordeev, N. Kaluzhniy, S. Mintairov, A. Payusov, Yu. Shernyakov

Proceedings Volume 9733, 97330P (2016) https://doi.org/10.1117/12.2209616

KEYWORDS: Waveguides, High power lasers, Semiconductor lasers, Waveguide lasers, Mirrors, Diodes, Optical engineering, Active optics, Refractive index, Laser applications, Laser processing, Photonic crystals, Laser development

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Proceedings Article | 4 March 2016 Paper

Paper

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

V. Shchukin, N. Ledentsov, T. Slight, W. Meredith, N. Gordeev, A. Nadtochy, A. Payusov, M. Maximov, S. Blokhin, A. Blokhin, Yu. Zadiranov, N. Maleev, V. Ustinov, K. Choquette

Proceedings Volume 9766, 976609 (2016) https://doi.org/10.1117/12.2208915

KEYWORDS: Titanium dioxide, Dielectrics, Silica, Reflectivity, Refractive index, Semiconductors, Temperature metrology, Vertical cavity surface emitting lasers, Semiconductor lasers, Distributed Bragg reflectors

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Proceedings Article | 16 March 2015 Paper

Paper

Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks

Nikolay Ledentsov, V. Shchukin, M. Maximov, Nikita Gordeev, N. Kaluzhniy, S. Mintairov, A. Payusov, Yu. Shernyakov, K. Vashanova, M. Kulagina, N. Schmidt

Proceedings Volume 9357, 93570X (2015) https://doi.org/10.1117/12.2077018

KEYWORDS: Waveguides, Semiconductor lasers, Near field optics, Bessel beams, Electroluminescence, Gaussian beams, Cladding, Near field, Refractive index

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Proceedings Article | 9 March 2015 Paper

Paper

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Nikolay Ledentsov, V. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. Cherkashin, Yu Shernyakov, A. Payusov, Nikita Gordeev, M. Maximov, S. Schlichting, F. Nippert, A. Hoffmann

Proceedings Volume 9383, 93830E (2015) https://doi.org/10.1117/12.2083953

KEYWORDS: Electroluminescence, Gallium arsenide, Light emitting diodes, Superlattices, Transmission electron microscopy, Cladding, Electrons, Heterojunctions, Aluminium gallium indium phosphide, Aluminum

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Proceedings Article | 7 March 2014 Paper

Paper

High differential efficiency tilted wave laser

N. Ledentsov, V. Shchukin, N. Yu. Gordeev, Yu. Shernyakov, A. Payusov, M. Maximov, N. Kaluzhniy, S. Mintairov, V. Lantratov, K. Vashanova, M. Kulagina, S. Rouvimov

Proceedings Volume 8965, 89650Q (2014) https://doi.org/10.1117/12.2039955

KEYWORDS: Waveguides, Quantum wells, Indium gallium arsenide, Semiconductor lasers, Transmission electron microscopy, Indium, Continuous wave operation, Modulation, Cladding, Active optics

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SPIE Journal Paper | 18 July 2013

Refractive index of laser active region based on InAs/InGaAs quantum dots

Nikita Gordeev, Oleg Rumyantsev, Ivan Savenko, Alexey Payusov, Fedor Zubov, Mikhail Maximov, Alexey Zhukov

JNP, Vol. 7, Issue 01, 073087, (July 2013) https://doi.org/10.1117/12.10.1117/1.JNP.7.073087

KEYWORDS: Refractive index, Waveguides, Quantum dots, Indium arsenide, Gallium arsenide, Gallium, Semiconducting wafers, Semiconductor lasers, Numerical simulations, Data modeling

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Proceedings Article | 26 February 2010 Paper

Paper

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Vitaly Shchukin, Nikolai Ledentsov, Vladimir Kalosha, Thorsten Kettler, Kristijan Posilovic, Daniel Seidlitz, Dieter Bimberg, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, Innokenty Novikov, Yuri Shernyakov, Alena Chunareva, Mikhail Maximov

Proceedings Volume 7597, 75971A (2010) https://doi.org/10.1117/12.847040

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Active optics, Cladding, Near field, Near field optics, High power lasers, Crystals, Phase matching

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Proceedings Article | 24 February 2010 Paper

Paper

Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots

Nikita Gordeev, Vadim Goncharov, Sergey Mintairov, Nikolay Kalyuzhnyy, Vladimir Lantratov, Pavel Brunkov

Proceedings Volume 7610, 76100L (2010) https://doi.org/10.1117/12.840269

KEYWORDS: Quantum dots, Gallium arsenide, Atomic force microscopy, Indium arsenide, Metalorganic chemical vapor deposition, Optical lithography, Epitaxy, Oxides, Atomic force microscope, Oxidation

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Proceedings Article | 12 February 2010 Paper

Paper

High-power high-brightness semiconductor lasers based on novel waveguide concepts

Dieter Bimberg, Kristijan Posilovic, Vladimir Kalosha, Thorsten Kettler, Daniel Seidlitz, Vitaly Shchukin, Nikolay Ledentsov, Nikita Gordeev, Leonid Karachinsky, Innokenty Novikov, Mikhail Maximov, Yuri Shernyakov, Alena Chunareva, Frank Bugge, Markus Weyers

Proceedings Volume 7616, 76161I (2010) https://doi.org/10.1117/12.846577

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Continuous wave operation, Photonic crystals, Waveguide lasers, Cladding, High power lasers, Laser crystals

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Proceedings Article | 18 November 2008 Paper

Paper

Tilted cavity concept for the high-power wavelength stabilized diode lasers

L. Ya. Karachinsky, I. Novikov, G. Fiol, M. Kuntz, Yu. Shernyakov, N. Yu. Gordeev, M. Maximov, M. Lifshits, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, S. Mikhrin, D. Bimberg

Proceedings Volume 7138, 713804 (2008) https://doi.org/10.1117/12.817968

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Continuous wave operation, Modulation, High power lasers, Reflectivity, Laser stabilization, Vertical cavity surface emitting lasers, Gallium arsenide, Temperature metrology

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Proceedings Article | 22 February 2008 Paper

Paper

High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications

N. Yu. Gordeev, M. Maximov, Y. Shernyakov, I. Novikov, L. Ya. Karachinsky, V. Shchukin, T. Kettler, K. Posilovic, N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D. Arbiv, U. Ben-Ami

Proceedings Volume 6889, 68890W (2008) https://doi.org/10.1117/12.784402

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Near field optics, Refractive index, Continuous wave operation, Pulsed laser operation, High power lasers, Laser applications, Laser crystals

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Proceedings Article | 12 July 2006 Paper

Paper

High brilliance photonic band crystal lasers

V. Shchukin, N. Ledentsov, N. Gordeev, L. Karachinsky, N. Kryzhanovskaya, S. Kuznetsov, M. Lifshits, M. Maximov, I. Novikov, Yu. Shernyakov, T. Kettler, K. Posilovic, D. Bimberg

Proceedings Volume 6350, 635005 (2006) https://doi.org/10.1117/12.693348

KEYWORDS: Photonic crystals, Laser crystals, Waveguides, Semiconductor lasers, Refractive index, Crystals, Reflectivity, High power lasers, Gallium arsenide, Near field optics

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Proceedings Article | 28 February 2006 Paper

Paper

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

M. Maximov, Yu. Shernyakov, I. Novikov, S. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, I. Soshnikov, Yu. Musikhin, N. Kryzhanovskaya, A. Sharon, U. Ben-Ami, V. Kalosha, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, D. Bimberg

Proceedings Volume 6115, 611513 (2006) https://doi.org/10.1117/12.661389

KEYWORDS: Waveguides, Photonic crystals, Semiconductor lasers, Refractive index, Crystals, Laser crystals, Light emitting diodes, Geometrical optics, Near field optics, Cladding

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Proceedings Article | 28 April 2005 Paper

Paper

Edge and surface-emitting tilted cavity lasers

N. Ledentsov, V. Shchukin, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Gordeev, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601953

KEYWORDS: Refractive index, Reflectivity, Gallium arsenide, Quantum wells, Semiconductor lasers, Waveguides, Vertical cavity surface emitting lasers, Electroluminescence, Near field, Reflection

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Proceedings Article | 13 April 2005 Paper

Paper

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots

Sara Pellegrini, Gerald Buller, Leonid Karachinsky, A. Shkolnik, Nikita Gordeev, Georgy Zegrya, Vadim Evtikhiev, Ian Sellers, Maurice Skolnick, H. Liu, Mark Hopkinson

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.587846

KEYWORDS: Luminescence, Aluminum, Quantum dots, Indium arsenide, Temperature metrology, Gallium arsenide, Picosecond phenomena, Gallium, Sensors, Time metrology

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Proceedings Article | 8 July 2003 Paper

Paper

Peculiarities of electroluminescence of quantum dot laser heterostructures

Innokenty Novikov, Leonid Karachinsky, Petr Kop'ev, Victor Ustinov, Sergey Zaitsev, Nikita Gordeev

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498248

KEYWORDS: Heterojunctions, Quantum dots, Electroluminescence, Temperature metrology, Quantum dot lasers, Switches, Gallium arsenide, Molecular beam epitaxy, Cladding, GRIN lenses

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Proceedings Article | 8 July 2003 Paper

Paper

Two-photon absorption in InGaAsP waveguides

Leonid Karachinsky, Nikita Gordeev, Innokenty Novikov, Andrei Lyutetskiy, Nikita Pikhtin, Natalia Fetisova, Ilya Tarasov, Petr Kop'ev

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498647

KEYWORDS: Waveguides, Absorption, Semiconductors, Photodetectors, Nonlinear response, Semiconductor lasers, Quantum wells, Heterojunctions, Photons, Sensors

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Proceedings Article | 8 July 2003 Paper

Paper

Superradiance as a transition phase from spontaneous to stimulated emission in low-dimensional semiconductor heterostructures

Leonid Karachinsky, Nikita Gordeev, Innokenty Novikov, Georgy Zegrya

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498374

KEYWORDS: Heterojunctions, Quantum wells, Semiconductors, Dielectrics, Electromagnetism, Semiconductor lasers, Dielectric polarization, Transition metals, Plasma, Picosecond phenomena

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Proceedings Article | 29 December 1999 Paper

Paper

Collective resonance and form factor of homogeneous broadening in semiconductors

Leonid Karachinsky, Nikita Gordeev, Vladimir Kopchatov, Petr Kop'ev, Innokenty Novikov, Nikita Pikhtin, Ilya Tarasov, Sergey Zaitsev

Proceedings Volume 4016, (1999) https://doi.org/10.1117/12.373654

KEYWORDS: Electroluminescence, Quantum wells, Semiconductors, Semiconductor lasers, Light emitting diodes, Chlorine, Semiconductor optoelectronics, Optoelectronic devices, Heterojunctions, Liquid phase epitaxy

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Proceedings Article | 3 November 1995 Paper

Paper

Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature

Sergey Zaitsev, Nikita Gordeev, M. Soshnikov, Alexander Lunev, Alexey Egorov, Alexey Zhukov, Victor Ustinov, Nikolai Ledentsov, Petr Kop'ev

Proceedings Volume 2648, (1995) https://doi.org/10.1117/12.226182

KEYWORDS: Quantum dots, Gallium arsenide, Electroluminescence, Laser processing, Semiconductor lasers, External quantum efficiency, Laser applications, Optical pumping, Solid state lasers, Amorphous silicon

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Showing 5 of 24 publications

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