Prof. Nikolai N. Ledentsov Profile

Prof. Nikolai N. Ledentsov

Chief Executive Officer at VI Systems GmbH

SPIE Involvement:

Author

Publications (107)

Proceedings Article | 20 June 2024 Presentation + Paper

Monolithically integrated optical computing component for photonic matrix multiplication based on electro-optically modulated vertical-cavity surface-emitting lasers

N. Ledentsov, J. Dijkstra, O. Yu. Makarov, V. Shchukin, L. Chorchos, J.-R. Kropp, W. H. Pernice

Proceedings Volume 13002, 130020D (2024) https://doi.org/10.1117/12.3017020

KEYWORDS: Electrooptic modulation, Vertical cavity surface emitting lasers, Optical computing, Modulation, Waveguides, Matrix multiplication, Integrated optics, Electrooptics, Artificial intelligence

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Proceedings Article | 13 March 2024 Presentation + Paper

Analysis of laterally-coupled-cavity VCSELs for ultra-high-frequency photon-photon resonance modulation

N. Ledentsov, V. Shchukin, Ł. Chorchos, O. Yu. Makarov, J.-R. Kropp, I. Titkov, V. Kalosha, V. Zerova, M. Lindemann, N. Gerhardt, M. D’Alessandro, V. Torrelli, P. Debernardi, A. Tibaldi, M. Hofmann

Proceedings Volume 12904, 1290405 (2024) https://doi.org/10.1117/12.3001177

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Modulation frequency, Laser frequency, Frequency response, Streak cameras, Oscilloscopes, Near field, Single mode fibers, Data acquisition

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Proceedings Article | 13 March 2024 Presentation + Paper

Impact of stress current on electro-optical properties of the active cavity region in 850 nm VCSELs

A. Jaeger, N. Ledentsov, H. Meinert, M. Stock, K. Ehling, I. Titkov, O. Yu. Makarov

Proceedings Volume 12904, 129040F (2024) https://doi.org/10.1117/12.3001840

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Photocurrent, Electric fields, Doping, Mirrors, Quantum operations, Quantum processes, Quantum experiments

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Proceedings Article | 17 March 2023 Presentation

100Gb/s short wavelength VCSELs applying a multi-aperture approach

Lukasz Chorchos, Nikolay Ledentsov, Oleg Makarov, Vitaly Shchukin, Nikolai Ledentsov, Joerg-R. Kropp, Jaroslaw Turkiewicz

Proceedings Volume PC12439, PC1243904 (2023) https://doi.org/10.1117/12.2650389

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Patents, Near field optics, Near field, Multimode fibers, Fiber lasers, Data transmission

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Proceedings Article | 7 March 2022 Poster + Presentation + Paper

Hyperchromatic multifocal 3D display for augmented reality applications

N. Ledentsov, V. Shchukin, I. Titkov, U. Zeitner

Proceedings Volume 11931, 1193104 (2022) https://doi.org/10.1117/12.2612340

KEYWORDS: Augmented reality, Heads up displays, 3D displays, Cameras, Video, RGB color model, Projection systems, 3D image processing, Virtual reality, Mixed reality

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Proceedings Article | 5 March 2022 Presentation + Paper

High efficiency electrically–driven single photon sources: advanced design concepts

N. Ledentsov, S. Blokhin, M. Bobrov, N. Maleev, A. Blokhin, V. Shchukin, S. Reitzenstein, V. Ustinov

Proceedings Volume 12009, 1200908 (2022) https://doi.org/10.1117/12.2602248

KEYWORDS: Optical microcavities, Semiconductors, Dielectrics, Light scattering, Oxides, Optical design, Refractive index, Single mode fibers, Scattering, Single photon

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Proceedings Article | 3 March 2022 Presentation + Paper

1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Sergey Blokhin, Nikolay Ledentsov, Stanislav Rochas, Andrey Babichev, Andrey Gladyshev, Łukasz Chorchos, Oleg Yu. Makarov, Leonid Ya. Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Kirill Voropaev, Irina Zhumaeva, Victor Ustinov, Anton Yu. Egorov

Proceedings Volume 12020, 120200K (2022) https://doi.org/10.1117/12.2605451

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Quantum wells, Internal quantum efficiency, Absorption, Mirrors, Epitaxy, Transparency, Single mode fibers, Semiconducting wafers

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Proceedings Article | 3 March 2022 Presentation + Paper

Advances in design and application of compact VCSEL arrays: from multicore fiber to optical wireless and beyond

N. Ledentsov, L. Chorchos, O. Yu. Makarov, M. Bou Sanayeh, J.-R. Kropp, I. Titkov, V. Shchukin, V. Kalosha, J. Turkiewicz

Proceedings Volume 12020, 1202008 (2022) https://doi.org/10.1117/12.2607878

KEYWORDS: Vertical cavity surface emitting lasers, Data transmission, Multimode fibers, Modulation, Receivers, Oxides, Optical interconnects, Fiber couplers, Signal generators

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Proceedings Article | 3 March 2022 Presentation + Paper

Photocurrent spectroscopy of 850nm oxide-confined vertical-cavity surface-emitting lasers

A. Jaeger, M. Bou Sanayeh, H. Meinert, M. Härer, O. Yu. Makarov, I. Titkov, N. Ledentsov

Proceedings Volume 12020, 120200I (2022) https://doi.org/10.1117/12.2608674

KEYWORDS: Optical spectroscopy, Electro optics, Vertical cavity surface emitting lasers, Quantum wells, Excitons, Spectroscopes, Mirrors, Reflectivity, Absorption, Semiconductors, Nondestructive evaluation, Modulation

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Proceedings Article | 1 August 2021 Presentation + Paper

Frequency characteristics of the polarization self‐modulation in oxide-confined vertical-cavity surface-emitting lasers

N. Ledentsov, L. Chorchos, O. Yu. Makarov, M. Bou Sanayeh, J.-R. Kropp, V. Shchukin, V. Kalosha, J. Turkiewicz

Proceedings Volume 11805, 118050X (2021) https://doi.org/10.1117/12.2593195

KEYWORDS: Vertical cavity surface emitting lasers, Near field optics, Polarization, Birefringence, Near field, Switching, Modulation, Reflection, Receivers, Antireflective coatings

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Proceedings Article | 5 March 2021 Presentation + Paper

Narrow spectrum VCSEL development for high performance 100G transceivers and increased transmission distance over multimode fiber

N. Ledentsov, L. Chorchos, O. Makarov, J.-R. Kropp, V. Shchukin, V. Kalosha, J. Turkiewicz

Proceedings Volume 11704, 117040P (2021) https://doi.org/10.1117/12.2578216

KEYWORDS: Vertical cavity surface emitting lasers, Multimode fibers, Transceivers, Data processing, Receivers, Interfaces, Electronics

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Proceedings Article | 5 March 2021 Presentation + Paper

NRZ, DB, and DMT performance for short-reach VCSEL-based optical interconnects

Lukasz Chorchos, Nikolay Ledentsov, Oleg Makarov, Philipp Scholz, Urs Hecht, Christoph Kottke, Volker Jungnickel, Ronald Freund, Vitaly Shchukin, Vladimir Kalosha, Jarosław Turkiewicz, Friedel Gerfers

Proceedings Volume 11692, 116920D (2021) https://doi.org/10.1117/12.2578553

KEYWORDS: Optical interconnects, Modulation, Wavelength division multiplexing, Transmitters, Signal to noise ratio, Shortwaves, Vertical cavity surface emitting lasers, Receivers, Binary data

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Proceedings Article | 1 April 2020 Presentation + Paper

Small-signal modulation and 10 Gb/s data transmission by microdisk lasers based on InGaAs/GaAs quantum well-dots

N. Kryzhanovskaya, E. Moiseev, F. Zubov, M. Maximov, S. Blokhin, N. Kalyuzhnyy, S. Mintairov, M. Kulagina, N. Ledentsov, A. Zhukov

Proceedings Volume 11356, 1135608 (2020) https://doi.org/10.1117/12.2554552

KEYWORDS: Modulation, Data transmission, Quantum wells, Semiconductor lasers, Indium gallium arsenide, Light sources, Optical communications, Microrings, Laser applications

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Proceedings Article | 24 February 2020 Presentation + Paper

Wavelength-stabilized near-field laser

V. A. Shchukin, V. P. Kalosha, N. Ledentsov, Ł. Chorchos, N. N. Ledentsov

Proceedings Volume 11301, 113011I (2020) https://doi.org/10.1117/12.2545235

KEYWORDS: Vertical cavity surface emitting lasers, Near field optics, Refractive index, Semiconductors, Dielectrics, Semiconducting wafers, Quantum wells, Reflectivity, Data transmission

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Surface–trapped electromagnetic waves can be localized at a boundary between a semiconductor distributed Bragg reflector (DBR) and a homogeneous dielectric medium or air. These waves enable a novel class of both in–plane–emitting and vertically–emitting optical devices including edge–emitting lasers, disk microlasers, near–field fiber–coupled lasers as well as vertical cavity surface emitting lasers (VCSELs). We show that the surface–trapped modes can be controlled by tuning the thickness of a single DBR layer. Diagrams in variables “wavelength – thickness of the control layer” are constructed for both TM and TE optical modes revealing the parameter domains, in which surface–trapped modes exist. The domains contain cusps, in the vicinity of which surface–trapped modes are allowed only in a narrow spectral region, enabling wavelength–stabilized operation of a laser. For an edge–emitting structure designed for lasing at ~1 μm, the lasing wavelength shifts upon temperature at a rate ~0.07 nm/K. The fraction of the optical power of the surface–trapped mode accumulated in the air can reach ~60%. In oxide–confined VCSEL structures the surface–trapped mode can be used for engineering of the interaction with the VCSEL lasing modes. Deposition of an effective (3λ/4)–thick additional layer on top of the top DBR of the VCSEL allows surface–trapped modes to reach the wavelength of the VCSEL lasing modes. Interaction of these two types of generally non–orthogonal optical modes results in the lateral leakage of the VCSEL emission. Mapping of the VCSEL wafers in areas with the variable aperture diameters D shows non–monotonous behavior of side mode suppression ratio (SMRS) versus D oscillating in the range from 7 dB to ~30 dB with three clearly revealed maxima in the SMSR at particular aperture diameters varied in the range from ~3 μm to ~5 μm. Similar oscillatory behavior was previously predicted for a different type of leaky VCSELs. VCSELs with SMSR above 20 dB are tested for data transmission over a multimode fiber (MMF). 40Gb/s open eye data transmission over 1.4 km OM5 MMF without pre–emphasis or equalization is demonstrated is such device.

Proceedings Article | 24 February 2020 Paper

Oxidation stress induced birefringence in vertical cavity surface emitting lasers

N. Ledentsov, L. Chorchos, O. Makarov, J. -R. Kropp, V. Shchukin, V. P. Kalosha, Urs Hecht, P. Kurth, F. Gerfers, J. P. Turkiewicz, N. N. Ledentsov

Proceedings Volume 11300, 113000K (2020) https://doi.org/10.1117/12.2542972

KEYWORDS: Vertical cavity surface emitting lasers, Polarization, Birefringence, Near field optics, Switching, Near field, Multimode fibers, Data transmission, Receivers, Modulation

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Proceedings Article | 24 February 2020 Presentation + Paper

Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

N. Ledentsov, L. Chorchos, O. Makarov, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, J. P. Turkiewicz, N. Cherkashin, N. N. Ledentsov

Proceedings Volume 11300, 113000H (2020) https://doi.org/10.1117/12.2543244

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Temperature metrology, Data transmission, Semiconducting wafers, Oxides, Resistance, Eye, Pulsed laser operation, Multimode fibers

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Proceedings Article | 1 March 2019 Presentation + Paper

Design considerations for InGaAlP diode lasers on high-index substrates for the yellow and green spectral range

V. Shchukin, N. Ledentsov

Proceedings Volume 10939, 109390K (2019) https://doi.org/10.1117/12.2509380

KEYWORDS: Gallium, Aluminum, Electrons, Gallium arsenide, Aluminium phosphide, Quantum wells, Semiconductor lasers, Aluminium gallium indium phosphide, Photons, Quantization, Gallium indium arsenide antimonide phosphide

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Proceedings Article | 1 March 2019 Presentation + Paper

Comprehensive self-consistent analysis of oxide-confined vertical-cavity surface-emitting lasers

V. Kalosha, V. Shchukin, N. Ledentsov Jr., N. Ledentsov

Proceedings Volume 10938, 109380N (2019) https://doi.org/10.1117/12.2509583

KEYWORDS: Vertical cavity surface emitting lasers, Capacitance, Diffusion, Resistance, Heterojunctions, Doping, Aluminum, Semiconductor lasers, Modulation, Quantum wells

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Proceedings Article | 1 March 2019 Presentation + Paper

Energy efficient 850-nm VCSEL based optical transmitter and receiver link capable of 56 Gbit/s NRZ operation

N. Ledentsov Jr., M. Agustin, L. Chorchos, J.-R. Kropp, V. Shchukin, V. Kalosha, M. Koepp, C. Caspar, J. Turkiewicz, N. Ledentsov

Proceedings Volume 10938, 109380J (2019) https://doi.org/10.1117/12.2509916

KEYWORDS: Vertical cavity surface emitting lasers, Receivers, Modulation, Transmitters, Optical fabrication, Oscilloscopes, Optical fabrication equipment, Energy efficiency, Connectors

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Proceedings Article | 19 February 2018 Paper

Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150ºC

N. Ledentsov, M. Agustin, J.-R. Kropp, V. Shchukin, V. Kalosha, K. Chi, Z. Khan, J. W. Shi

Proceedings Volume 10552, 105520P (2018) https://doi.org/10.1117/12.2318015

KEYWORDS: Vertical cavity surface emitting lasers, Eye, Temperature metrology, Oxides, Data transmission, Near field, Data communications, Multimode fibers, Fiber lasers, Waveguides

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Proceedings Article | 19 February 2018 Paper

50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range

M. Agustin, N. Ledentsov, J.-R. Kropp, V. Shchukin, V. Kalosha, K. Chi, Z. Khan, J. W. Shi

Proceedings Volume 10552, 1055202 (2018) https://doi.org/10.1117/12.2289823

KEYWORDS: Vertical cavity surface emitting lasers, Eye, Data transmission, Picosecond phenomena, Modulation, Digital signal processing, Signal attenuation, Forward error correction, Dispersion, Multimode fibers

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Proceedings Article | 19 February 2018 Paper

Thermally stable surface-emitting tilted wave laser

V. Shchukin, N. Ledentsov, V. Kalosha, M. Agustin, J. R. Kropp, M. Maximov, F. Zubov, Yu. M. Shernyakov, A. Payusov, N. Yu Gordeev, M. Kulagina, A. Zhukov

Proceedings Volume 10552, 1055207 (2018) https://doi.org/10.1117/12.2290565

KEYWORDS: Vertical cavity surface emitting lasers, Electroluminescence, Refractive index, Waveguides, Semiconductors, Near field

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Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in–plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs–based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non–alloyed metal grid. Rectangular-shaped ~400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of ~70 μm. 7 μm–wide metal stripes serve as non–alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL–like mode at ~854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field ~10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of ~840 nm at room temperature, emitting light at two symmetric lobes at tilt angles ~40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of ~1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in–plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM–polarized surface–trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L–I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Proceedings Article | 7 August 2017 Paper

High speed data transmission with a modal filter

L. Chorchos, G. Stepniak, J. Turkiewicz, L. Szostkiewicz, M. Napierala, L. Ostrowski, B. Bienkowska, T. Nasilowski, J. Kropp, N. Ledentsov, V. Shchukin

Proceedings Volume 10445, 1044516 (2017) https://doi.org/10.1117/12.2281038

KEYWORDS: Vertical cavity surface emitting lasers, Optical filters, Eye, Multimode fibers, Data transmission, Signal attenuation, Electronic filtering, Fiber lasers, Manufacturing, Signal processing

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Proceedings Article | 25 February 2017 Paper

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

A. Babichev, L. Ya. Karachinsky, I. Novikov, A. Gladyshev, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J. Turkiewicz, M. Agustin, N. Ledentsov, K. Voropaev, A. Ionov, A. Yu. Egorov

Proceedings Volume 10122, 1012208 (2017) https://doi.org/10.1117/12.2250842

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Continuous wave operation, Fiber to the x, Quantum wells, Eye, Wafer-level optics, Gallium, Photodetectors, Aluminum

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Proceedings Article | 25 February 2017 Paper

Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

Jin-Wei Shi, Chia-Chien Wei, Jyehong Chen, N. Ledentsov, Ying-Jay Yang

Proceedings Volume 10122, 101220F (2017) https://doi.org/10.1117/12.2256640

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Optical interconnects, Resistance, Photonics, Light sources, Dispersion, Multimode fibers, Signal processing, Transmitters, Doping, Measurement devices, Digital signal processing, Oxides, Forward error correction, Solids

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Proceedings Article | 25 February 2017 Presentation + Paper

Robustness versus thermal effects of single-mode operation of vertical-cavity surface-emitting lasers with engineered leakage of high-order transverse optical modes

V. Kalosha, V. Shchukin, N. Ledentsov, J.-R. Kropp

Proceedings Volume 10122, 101220K (2017) https://doi.org/10.1117/12.2253021

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Laser optics, Laser applications, Distributed Bragg reflectors, Refractive index, Control systems, Absorption, Thermography, 3D modeling, Thermal effects, Dielectrics, Semiconductors, Thermal modeling

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Proceedings Article | 22 February 2017 Presentation + Paper

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

N. Ledentsov, V. Shchukin, Yu. Shernyakov, M. Kulagina, A. Payusov, N. Yu. Gordeev, M. Maximov, N. Cherkashin

Proceedings Volume 10086, 100860L (2017) https://doi.org/10.1117/12.2252957

KEYWORDS: Semiconductor lasers, Gallium arsenide, Diodes, Laser damage threshold, Visible radiation, Electrons, Waveguides, High power lasers, Gallium, Aluminum, Quantum wells, Aluminium phosphide, Refractive index

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Proceedings Article | 16 February 2017 Presentation + Paper

Resonant cavity light–emitting diodes based on dielectric passive cavity structures

N. Ledentsov, V. Shchukin, J.-R. Kropp, L. Zschiedrich, F. Schmidt

Proceedings Volume 10124, 101240O (2017) https://doi.org/10.1117/12.2253089

KEYWORDS: Dielectrics, Light emitting diodes, Semiconductors, Photonic crystals, Etching, Diodes, Distributed Bragg reflectors, Vertical cavity surface emitting lasers, Multilayers, Refractive index, Oxides, Light sources, Light, Quantum wells

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A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide– semiconductor distributed Bragg reflector (DBR), the p–n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer–scale pattern. An oxide–confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs–AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlO_x to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlO_x DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at ~610 nm. A passive dielectric SiO₂ cavity is confined by dielectric Ta₂O₅/SiO₂ and AlGaAs-AlO_x DBRs. Cylindrically–symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide–confined apertures ~100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength (~1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlO_x DBRs.

Proceedings Article | 10 February 2017 Paper

Impact of the sample modal composition of 850nm VCSELs on high speed data transmission over multimode fiber applying different modulation formats

J.-R. Kropp, N. Ledentsov, M. Agustin, V. Shchukin, J. Turkiewicz, I. Eddie

Proceedings Volume 10325, 103250W (2017) https://doi.org/10.1117/12.2271051

KEYWORDS: Vertical cavity surface emitting lasers, Multimode fibers, Modulation, Data transmission, Data communications

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Proceedings Article | 10 February 2017 Paper

Relative intensity noise of single- and multi-mode 850 nm vertical-cavity surface-emitting lasers

Łukasz Chorchos, Jarosław Turkiewicz, J. Kropp, N. Ledentsov, V. Shchukin, M. Agustin

Proceedings Volume 10325, 103250J (2017) https://doi.org/10.1117/12.2271089

KEYWORDS: Vertical cavity surface emitting lasers

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Proceedings Article | 10 February 2017 Paper

High speed 850 nm single mode and multi mode VCSEL transmission over multimode fiber

Łukasz Chorchos, Jarosław Turkiewicz, J. Kropp, N. Ledentsov, V. Shchukin, M. Agustin

Proceedings Volume 10325, 103250T (2017) https://doi.org/10.1117/12.2271043

KEYWORDS: Vertical cavity surface emitting lasers, Multimode fibers, Optical fibers

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SPIE Journal Paper | 10 November 2016

Temperature characteristics of tilted wave lasers

Mikhail Maximov, Nikita Gordeev, Yuri Shernyakov, Alexey Payusov, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Alexey Zhukov, Vitaly Shchukin, Nikolai Ledentsov

OE, Vol. 55, Issue 11, 116102, (November 2016) https://doi.org/10.1117/12.10.1117/1.OE.55.11.116102

KEYWORDS: Waveguides, Refractive index, Active optics, Temperature metrology, Quantum wells, Continuous wave operation, Mirrors, Semiconductor lasers, Metalorganic chemical vapor deposition

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Proceedings Article | 28 September 2016 Paper

On high speed transmission with the 850nm VCSELs

Jarosław Turkiewicz, Łukasz Chorchos, Rafael Puerta Ramirez, Juan Jose Vegas Olmos, Nikolay Ledentsov

Proceedings Volume 10031, 100311B (2016) https://doi.org/10.1117/12.2249334

KEYWORDS: Vertical cavity surface emitting lasers, Optical communications, Modulation, Transmitters, Multimode fibers, Switching, Energy efficiency, Data centers, Data communications, Power supplies

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Proceedings Article | 4 March 2016 Paper

Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

N. Ledentsov, V. Shchukin, M. Maximov, N. Gordeev, N. Kaluzhniy, S. Mintairov, A. Payusov, Yu. Shernyakov

Proceedings Volume 9733, 97330P (2016) https://doi.org/10.1117/12.2209616

KEYWORDS: Waveguides, High power lasers, Semiconductor lasers, Waveguide lasers, Mirrors, Diodes, Optical engineering, Active optics, Refractive index, Laser applications, Laser processing, Photonic crystals, Laser development

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Proceedings Article | 4 March 2016 Paper

Close to 100 Gbps discrete multitone transmission over 100m of multimode fiber using a single transverse mode 850nm VCSEL

Bo Wu, Xian Zhou, Yanan Ma, Jun Luo, Kangping Zhong, Shaofeng Qiu, Zhiyong Feng, Yazhi Luo, Mikel Agustin, Nikolay Ledentsov, Joerg Kropp, Vitaly Shchukin, Iain Eddie, Lu Chao

Proceedings Volume 9766, 97660K (2016) https://doi.org/10.1117/12.2208901

KEYWORDS: Vertical cavity surface emitting lasers, Multimode fibers, Data transmission, Optical interconnects, Forward error correction, Modulation, Digital signal processing, Oxides, Electroluminescence, Optical microscopy

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Proceedings Article | 4 March 2016 Paper

Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

N. Ledentsov, V. Shchukin, J.-R. Kropp, S. Burger, F. Schmidt

Proceedings Volume 9766, 976608 (2016) https://doi.org/10.1117/12.2208909

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Visualization, Modulation, Electroluminescence, 3D modeling, Data modeling, Zinc, CCD cameras, Neodymium, Ions

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Proceedings Article | 4 March 2016 Paper

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

V. Shchukin, N. Ledentsov, T. Slight, W. Meredith, N. Gordeev, A. Nadtochy, A. Payusov, M. Maximov, S. Blokhin, A. Blokhin, Yu. Zadiranov, N. Maleev, V. Ustinov, K. Choquette

Proceedings Volume 9766, 976609 (2016) https://doi.org/10.1117/12.2208915

KEYWORDS: Titanium dioxide, Dielectrics, Silica, Reflectivity, Refractive index, Semiconductors, Temperature metrology, Vertical cavity surface emitting lasers, Semiconductor lasers, Distributed Bragg reflectors

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Proceedings Article | 11 September 2015 Paper

Adaptive optical interconnects: the ADDAPT project

Ronny Henker, Jan Pliva, Mahdi Khafaji, Frank Ellinger, Thomas Toifl, Bert Offrein, Alessandro Cevrero, Ilter Oezkaya, Marc Seifried, Nikolay Ledentsov, Joerg-R. Kropp, Vitaly Shchukin, Martin Zoldak, Leos Halmo, Jaroslaw Turkiewicz, Wyn Meredith, Iain Eddie, Michael Georgiades, Savvas Charalambides, Jeroen Duis, Pieter van Leeuwen

Proceedings Volume 9662, 966207 (2015) https://doi.org/10.1117/12.2202564

KEYWORDS: Transceivers, Optical interconnects, Switching, Data centers, Data communications, Optical components, Clocks, Modulation, Telecommunications, Optical networks

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Proceedings Article | 20 March 2015 Paper

Engineering of optical modes in vertical-cavity microresonators by aperture placement: applications to single-mode and near-field lasers

V. Shchukin, N. Ledentsov, J.-R. Kropp, G. Steinle, K. Choquette, S. Burger, F. Schmidt

Proceedings Volume 9381, 93810V (2015) https://doi.org/10.1117/12.2077012

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Near field optics, Near field, Refractive index, 3D modeling, Waveguides, Reflectivity, Resistance, Semiconductors

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Proceedings Article | 16 March 2015 Paper

Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks

Nikolay Ledentsov, V. Shchukin, M. Maximov, Nikita Gordeev, N. Kaluzhniy, S. Mintairov, A. Payusov, Yu. Shernyakov, K. Vashanova, M. Kulagina, N. Schmidt

Proceedings Volume 9357, 93570X (2015) https://doi.org/10.1117/12.2077018

KEYWORDS: Waveguides, Semiconductor lasers, Near field optics, Bessel beams, Electroluminescence, Gaussian beams, Cladding, Near field, Refractive index

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Proceedings Article | 9 March 2015 Paper

850 nm single mode VCSEL-based 25Gx16 transmitter/receiver boards for parallel signal transmission over 1 km of multimode fiber

J.-R. Kropp, V. Shchukin, N. Ledentsov, George Schaefer, Nikolay Ledentsov, Bo Wu, Qiu Shaofeng, Ma Yanan, Feng Zhiyong, Jarek Turkiewicz

Proceedings Volume 9390, 93900C (2015) https://doi.org/10.1117/12.2080882

KEYWORDS: Vertical cavity surface emitting lasers, Data transmission, Multimode fibers, Eye, Receivers, Optical fabrication, Transmitters, Optics manufacturing, Transceivers, Connectors

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Proceedings Article | 9 March 2015 Paper

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Nikolay Ledentsov, V. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. Cherkashin, Yu Shernyakov, A. Payusov, Nikita Gordeev, M. Maximov, S. Schlichting, F. Nippert, A. Hoffmann

Proceedings Volume 9383, 93830E (2015) https://doi.org/10.1117/12.2083953

KEYWORDS: Electroluminescence, Gallium arsenide, Light emitting diodes, Superlattices, Transmission electron microscopy, Cladding, Electrons, Heterojunctions, Aluminium gallium indium phosphide, Aluminum

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Proceedings Article | 4 March 2015 Paper

High-speed modulation, wavelength, and mode control in vertical-cavity surface-emitting lasers

Nikolay Ledentsov, Jörg-R. Kropp, Vitaly Shchukin, Gunther Steinle, Jarek Turkiewicz, Bo Wu, Shaofeng Qiu, Yanan Ma, Zhiyong Feng, Sven Burger, Frank Schmidt, Christoph Caspar, Ronald Freund, Kent Choquette

Proceedings Volume 9381, 93810F (2015) https://doi.org/10.1117/12.2082951

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Oxides, Optical fibers, Multimode fibers, Dielectrics, Electro optics, Dispersion, Photonic crystals, Near field

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Proceedings Article | 7 March 2014 Paper

High differential efficiency tilted wave laser

N. Ledentsov, V. Shchukin, N. Yu. Gordeev, Yu. Shernyakov, A. Payusov, M. Maximov, N. Kaluzhniy, S. Mintairov, V. Lantratov, K. Vashanova, M. Kulagina, S. Rouvimov

Proceedings Volume 8965, 89650Q (2014) https://doi.org/10.1117/12.2039955

KEYWORDS: Waveguides, Quantum wells, Indium gallium arsenide, Semiconductor lasers, Transmission electron microscopy, Indium, Continuous wave operation, Modulation, Cladding, Active optics

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Proceedings Article | 13 March 2013 Paper

Impact of the aperture diameter on the energy efficiency of oxide-confined 850 nm high speed VCSELs

Philip Moser, James Lott, Philip Wolf, Gunter Larisch, Hui Li, Nikolay Ledentsov, Dieter Bimberg

Proceedings Volume 8639, 86390V (2013) https://doi.org/10.1117/12.2002446

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Quantum efficiency, Energy efficiency, Data transmission, Resistance, Optical interconnects, Quantum information, Computing systems

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Proceedings Article | 9 May 2012 Paper

High-speed VCSELs for energy efficient computer interconnects

Philip Moser, Philip Wolf, James Lott, Gunter Larisch, Alexey Payusov, Alex Mutig, Waldemar Unrau, Nikolay Ledentsov, Werner Hofmann, Dieter Bimberg

Proceedings Volume 8432, 843202 (2012) https://doi.org/10.1117/12.923054

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Modulation, Multimode fibers, Optical fibers, Temperature metrology, Data transmission, Data centers, Binary data, Standards development

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Proceedings Article | 29 February 2012 Paper

Passive cavity surface-emitting and edge-emitting lasers: physics, design, modeling

Vitaly Shchukin, James Lott, Nikolay Ledentsov

Proceedings Volume 8255, 82551M (2012) https://doi.org/10.1117/12.902645

KEYWORDS: Waveguides, Active optics, Vertical cavity surface emitting lasers, Dielectrics, Laser scattering, Phase shifts, Semiconductor lasers, Laser cutting, Reflectivity, Cladding

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Proceedings Article | 7 February 2012 Paper

Energy-efficient vertical-cavity surface-emitting lasers (VCSELs) for "green" data and computer communication

Philip Moser, James Lott, Philip Wolf, Gunter Larisch, Alexey Payusov, Gerrit Fiol, Nikolay Ledentsov, Werner Hofmann, Dieter Bimberg

Proceedings Volume 8276, 82760J (2012) https://doi.org/10.1117/12.906856

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data transmission, Multimode fibers, Optical fibers, Data communications, Optical interconnects, Temperature metrology, Energy efficiency, Semiconducting wafers

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Proceedings Article | 7 February 2012 Paper

Progress on single mode VCSELs for data- and tele-communications

Nikolay Ledentsov, James Lott, Jörg-R. Kropp, Vitaly Shchukin, Dieter Bimberg, Philip Moser, Gerrit Fiol, Alexey Payusov, Denis Molin, Gerard Kuyt, Adrian Amezcua, Leonid Karachinsky, Sergey Blokhin, Innokenty Novikov, Nikolay Maleev, Christoph Caspar, Ronald Freund

Proceedings Volume 8276, 82760K (2012) https://doi.org/10.1117/12.902643

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data transmission, Multimode fibers, Reliability, Standards development, Temperature metrology, Optical interconnects, Data communications, Oxides

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Proceedings Article | 7 February 2012 Paper

Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs

Sergey Blokhin, Nikolai Maleev, Alexander Kuzmenkov, James Lott, Marina Kulagina, Yurii Zadiranov, Andrey Gladyshev, Alexey Nadtochiy, Ekaterina Nikitina, Vladimir Tikhomirov, Nikolai Ledentsov, Viktor Ustinov

Proceedings Volume 8276, 82760W (2012) https://doi.org/10.1117/12.907346

KEYWORDS: Vertical cavity surface emitting lasers, Switching, Oxides, Near field optics, Optical microcavities, Waveguides, Metals, Quantum wells, Convection

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Proceedings Article | 28 November 2011 Paper

High-speed 850 and 980 nm VCSELs for high-performance computing applications

Alex Mutig, Philip Moser, James Lott, Philip Wolf, Werner Hofmann, Nikolay Ledentsov, Dieter Bimberg

Proceedings Volume 8308, 830818 (2011) https://doi.org/10.1117/12.903698

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Data transmission, Oxides, Quantum wells, Multimode fibers, Light sources, Gallium arsenide, Binary data, Temperature metrology

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Proceedings Article | 28 November 2011 Paper

850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C

S. Blokhin, J. Lott, N. Ledentsov, L. Karachinsky, A. Kuzmenkov, I. Novikov, N. Maleev, G. Fiol, D. Bimberg

Proceedings Volume 8308, 830819 (2011) https://doi.org/10.1117/12.904604

KEYWORDS: Vertical cavity surface emitting lasers, Palladium, Modulation, Eye, Optical fibers, Capacitance, Oxides, Multimode fibers, Fiber optic communications, Data communications

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Proceedings Article | 21 February 2011 Paper

Analogue modulation performance of 20 GHz vertical cavity surface emitting lasers for radio over fiber applications

M. Crisp, Z. Qureshi, J. Ingham, R. Penty, I. White, N. Ledentsov, J. Lott

Proceedings Volume 7933, 79331D (2011) https://doi.org/10.1117/12.877361

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Hybrid fiber radio, Analog modulation, Oxides, Radio over Fiber, Electro optics, Radio optics, Refractive index, Data communications

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Proceedings Article | 8 February 2011 Paper

High-speed single-mode quantum dot and quantum well VCSELs

Nikolay Ledentsov, James Lott, Dieter Bimberg, Alex Mutig, Gerrit Fiol, Sergey Blokhin, Alexey Nadtochiy, Vitaly Shchukin, Jörg Kropp, Innokenty Novikov, Leonid Karachinsky, Mikhail Maximov

Proceedings Volume 7952, 79520J (2011) https://doi.org/10.1117/12.880404

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Quantum dots, Eye, Modulation, Optical fibers, Multimode fibers, Oxides, Receivers, Luminescence

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Proceedings Article | 28 April 2010 Paper

Oxide confined 850-nm VCSELs for high-speed datacom applications

Philip Moser, Alex Mutig, James Lott, Sergey Blokhin, Gerrit Fiol, Alexey Nadtochiy, Nikolai Ledentsov, Dieter Bimberg

Proceedings Volume 7720, 77201W (2010) https://doi.org/10.1117/12.854276

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data communications, Oxides, Reliability, Eye, Data transmission, Picosecond phenomena, Photodetectors, Signal to noise ratio

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Proceedings Article | 26 February 2010 Paper

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Vitaly Shchukin, Nikolai Ledentsov, Vladimir Kalosha, Thorsten Kettler, Kristijan Posilovic, Daniel Seidlitz, Dieter Bimberg, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, Innokenty Novikov, Yuri Shernyakov, Alena Chunareva, Mikhail Maximov

Proceedings Volume 7597, 75971A (2010) https://doi.org/10.1117/12.847040

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Active optics, Cladding, Near field, Near field optics, High power lasers, Crystals, Phase matching

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Proceedings Article | 26 February 2010 Paper

Optical components for very short reach applications at 40 Gb/s and beyond

Nikolay Ledentsov, James Lott, Vitaly Shchukin, Dieter Bimberg, Alex Mutig, Tim Germann, Jörg-R. Kropp, Leonid Karachinsky, Sergey Blokhin, Alexey Nadtochiy

Proceedings Volume 7597, 75971F (2010) https://doi.org/10.1117/12.847330

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Integrated circuits, Oxides, Optical components, Standards development, Reliability, Electroluminescence, Image processing, Copper

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Proceedings Article | 12 February 2010 Paper

High-power high-brightness semiconductor lasers based on novel waveguide concepts

Dieter Bimberg, Kristijan Posilovic, Vladimir Kalosha, Thorsten Kettler, Daniel Seidlitz, Vitaly Shchukin, Nikolay Ledentsov, Nikita Gordeev, Leonid Karachinsky, Innokenty Novikov, Mikhail Maximov, Yuri Shernyakov, Alena Chunareva, Frank Bugge, Markus Weyers

Proceedings Volume 7616, 76161I (2010) https://doi.org/10.1117/12.846577

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Continuous wave operation, Photonic crystals, Waveguide lasers, Cladding, High power lasers, Laser crystals

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Proceedings Article | 6 February 2010 Paper

High-speed 850 nm oxide-confined VCSELs for DATACOM applications

Alex Mutig, Sergey Blokhin, Alexey Nadtochiy, Gerrit Fiol, James Lott, Vitaly Shchukin, Nikolai Ledenstov, Dieter Bimberg

Proceedings Volume 7615, 76150N (2010) https://doi.org/10.1117/12.840950

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Signal to noise ratio, Eye, Data communications, Oxides, Resistance, Computing systems, Optical fibers, Reliability

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Proceedings Article | 24 February 2009 Paper

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

J. Lott, V. Shchukin, N. Ledentsov, A. Stinz, F. Hopfer, A. Mutig, G. Fiol, D. Bimberg, S. Blokhin, L. Karachinsky, I. Novikov, M. Maximov, N. Zakharov, P. Werner

Proceedings Volume 7211, 721114 (2009) https://doi.org/10.1117/12.816947

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Quantum wells, Indium arsenide, Gallium arsenide, Quantum dots, Optical microcavities, Telecommunications, Modulation, Indium gallium arsenide

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Proceedings Article | 18 February 2009 Paper

Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance

N. Ledentsov, J. Lott, V. Shchukin, H. Quast, F. Hopfer, G. Fiol, A. Mutig, P. Moser, T. Germann, A. Strittmatter, L. Karachinsky, S. Blokhin, I. Novikov, A. Nadtochi, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 7224, 72240P (2009) https://doi.org/10.1117/12.810192

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Indium arsenide, Eye, Quantum dots, Transmission electron microscopy, Frequency conversion, Multimode fibers, Copper

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Proceedings Article | 7 February 2009 Paper

120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly Shchukin, Nikolai Ledentsov, Sergey Mikhrin, Igor Krestnikov, Daniel Livshits, Alexey Kovsh, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 7229, 72290C (2009) https://doi.org/10.1117/12.813064

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Temperature metrology, Indium gallium arsenide, Resistance, Semiconductor lasers, Quantum wells, Oxides, Detection theory, Signal analysis

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Proceedings Article | 18 November 2008 Paper

Tilted cavity concept for the high-power wavelength stabilized diode lasers

L. Ya. Karachinsky, I. Novikov, G. Fiol, M. Kuntz, Yu. Shernyakov, N. Yu. Gordeev, M. Maximov, M. Lifshits, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, S. Mikhrin, D. Bimberg

Proceedings Volume 7138, 713804 (2008) https://doi.org/10.1117/12.817968

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Continuous wave operation, Modulation, High power lasers, Reflectivity, Laser stabilization, Vertical cavity surface emitting lasers, Gallium arsenide, Temperature metrology

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Proceedings Article | 25 April 2008 Paper

Energy characteristics of excitons in InGaN/GaN heterostructures

S. Usov, A. Tsatsul'nikov, W. Lundin, A. Sakharov, E. Zavarin, M. Sinitsyn, N. Ledentsov

Proceedings Volume 6995, 699515 (2008) https://doi.org/10.1117/12.780789

KEYWORDS: Indium gallium nitride, Excitons, Gallium nitride, Indium, Luminescence, Heterojunctions, Light emitting diodes, Quantum wells, Optical properties, Ultraviolet radiation

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Proceedings Article | 5 March 2008 Paper

Quantum dot photonics: edge emitter amplifier, and VCSEL

F. Hopfer, M. Kuntz, M. Lämmlin, G. Fiol, N. Ledentsov, A. Kovsh, S. Mikrin, I. Kaiander, V. Haisler, A. Lochmann, A. Mutig, C. Schubert, A. Umbach, V. Ustinov, U. Pohl, D. Bimberg

Proceedings Volume 7009, 700902 (2008) https://doi.org/10.1117/12.793286

KEYWORDS: Vertical cavity surface emitting lasers, Picosecond phenomena, Modulation, Quantum dots, Mode locking, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Eye

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Proceedings Article | 22 February 2008 Paper

High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications

N. Yu. Gordeev, M. Maximov, Y. Shernyakov, I. Novikov, L. Ya. Karachinsky, V. Shchukin, T. Kettler, K. Posilovic, N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D. Arbiv, U. Ben-Ami

Proceedings Volume 6889, 68890W (2008) https://doi.org/10.1117/12.784402

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Near field optics, Refractive index, Continuous wave operation, Pulsed laser operation, High power lasers, Laser applications, Laser crystals

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Proceedings Article | 22 February 2008 Paper

Ultra high-speed electro-optically modulated VCSELs: modeling and experimental results

V. Shchukin, N. Ledentsov, J. Lott, H. Quast, F. Hopfer, L. Ya. Karachinsky, M. Kuntz, P. Moser, A. Mutig, A. Strittmatter, V. Kalosha, D. Bimberg

Proceedings Volume 6889, 68890H (2008) https://doi.org/10.1117/12.784371

KEYWORDS: Vertical cavity surface emitting lasers, Modulators, Absorption, Modulation, Electro optics, Quantum wells, Reflectivity, Excitons, Refractive index, Mirrors

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Proceedings Article | 7 February 2007 Paper

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

N. Ledentsov, F. Hopfer, A. Mutig, V. Shchukin, A. V. Savel'ev, G. Fiol, M. Kuntz, V. A. Haisler, T. Warming, E. Stock, S. S. Mikhrin, A. R. Kovsh, C. Bornholdt, H. Eisele, M. Dähne, N. D. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6468, 64681O (2007) https://doi.org/10.1117/12.717248

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Modulators, Refractive index, Electro optics, Indium arsenide, Gallium arsenide, Transmission electron microscopy, Continuous wave operation

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Proceedings Article | 12 July 2006 Paper

High brilliance photonic band crystal lasers

V. Shchukin, N. Ledentsov, N. Gordeev, L. Karachinsky, N. Kryzhanovskaya, S. Kuznetsov, M. Lifshits, M. Maximov, I. Novikov, Yu. Shernyakov, T. Kettler, K. Posilovic, D. Bimberg

Proceedings Volume 6350, 635005 (2006) https://doi.org/10.1117/12.693348

KEYWORDS: Photonic crystals, Laser crystals, Waveguides, Semiconductor lasers, Refractive index, Crystals, Reflectivity, High power lasers, Gallium arsenide, Near field optics

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Proceedings Article | 6 July 2006 Paper

Self organized quantum dots for 1.3 µm photonic devices

M. Laemmlin, G. Fiol, C. Meuer, M. Kuntz, F. Hopfer, N. Ledentsov, A. Kovsh, D. Bimberg

Proceedings Volume 6350, 63500M (2006) https://doi.org/10.1117/12.692912

KEYWORDS: Mode locking, Quantum dots, Modulation, Picosecond phenomena, Optical amplifiers, Semiconductor lasers, Pulsed laser operation, Eye, Laser optics, Ultrafast phenomena

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Proceedings Article | 6 July 2006 Paper

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

F. Hopfer, A, Mutig, G. Fiol, M. Kuntz, S. Mikhrin, I. Krestnikov, D. Livshits, A. Kovsh, C. Bornholdt, V. Shchukin, N. Ledentsov, V. Gaysler, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6350, 635003 (2006) https://doi.org/10.1117/12.693006

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Quantum dots, Indium arsenide, Gallium arsenide, Eye, Indium gallium arsenide, Quantum wells, Transmission electron microscopy, Gallium

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Proceedings Article | 13 June 2006 Paper

Semiconductor quantum dot lasers

Victor Ustinov, Alexey Zhukov, Anton Egorov, Alexey Kovsh, Nikolai Maleev, Elizaveta Semenova, Mikhail Maximov, Nikolai Ledentsov, Zhores Alferov

Proceedings Volume 5946, 594615 (2006) https://doi.org/10.1117/12.639318

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Proceedings Article | 13 June 2006 Paper

Epitaxial growth of quantum-dot heterostructures on metamorphic buffers

Alexey Zhukov, Alexey Vasilyev, Elizaveta Semenova, Natailia Kryzhanovskaya, Andrey Gladyshev, Mikhail Maximov, Victor Ustinov, Nikolai Ledentsov

Proceedings Volume 5946, 594616 (2006) https://doi.org/10.1117/12.639319

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Proceedings Article | 28 February 2006 Paper

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

M. Maximov, Yu. Shernyakov, I. Novikov, S. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, I. Soshnikov, Yu. Musikhin, N. Kryzhanovskaya, A. Sharon, U. Ben-Ami, V. Kalosha, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, D. Bimberg

Proceedings Volume 6115, 611513 (2006) https://doi.org/10.1117/12.661389

KEYWORDS: Waveguides, Photonic crystals, Semiconductor lasers, Refractive index, Crystals, Laser crystals, Light emitting diodes, Geometrical optics, Near field optics, Cladding

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Proceedings Article | 22 February 2006 Paper

1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance

N. Ledentsov, A. Kovsh, V. Shchukin, S. Mikhrin, I. Krestnikov, A. Kozhukhov, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov, I. Soshnikov, A. Zhukov, Yu. Musikhin, V. Ustinov, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. Nguyen, K. Song, Chung-en Zah

Proceedings Volume 6133, 61330S (2006) https://doi.org/10.1117/12.641483

KEYWORDS: Gallium arsenide, Continuous wave operation, Semiconductor lasers, Quantum wells, Quantum dots, Indium arsenide, Indium gallium arsenide, Laser stabilization, High power lasers

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We have performed a systematic study of structural and optical properties of Quantum dot (QDs) lasers based on InAs/InGaAs quantum dots grown on GaAs substrates emitting in the 1.3 - 1.5 μm range. 1.3 μm range QD lasers are grown using GaAs as matrix material. It is shown that the lasers, grown with large number of QD stacks are metamorphic, with plastic relaxation occurring through the formation of misfit dislocations. Thus, 1.3 μm QD lasers with large number of stacks grown without strain compensation are metamorphic. Another type of defects is related to local dislocated clusters, which are the most dangerous. When proper optimization of the growth conditions is carried out, including a selective thermal etching off of statistically formed dislocated clusters through the defect-reduction technique (DRT), no significant impact of misfit dislocations on the degradation robustness is observed. In uncoated devices a high cw single mode power of ~700 mW is realized limited by thermal roll-over, which is not affected by 500 h ageing at room temperature. At elevated temperatures the main degradation mechanism revealed is catastrophic optical mirror damage (COMD). When the facet are passivated, the devices show the extrapolated operation lifetime in excess of 10⁶ h at 40°C at ~100 mW cw single mode output power. Longer wavelength (1.4 - 1.5 μm) devices are grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates. In this case, the plastic relaxation occurs through formation of both misfit and threading dislocations. The latter kill the device performance. Using DRT in this case enables blocking of threading dislocation with growth of QDs in defect-free upper layers. DRT is realized by selective capping of the defect-free areas and high-temperature etching of nano-holes at the non-capped regions near the dislocation. The procedure results in etching of holes and is followed by fast lateral overgrowth with merger of the growth fronts. If the defect does not propagate into the upper layer when the hole is capped, the upper layers become defect-free. Lasers based on this approach exhibited emission wavelength in the 1.4 -1.5 μm range with a differential quantum efficiency of about ~50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^-2 without degradation. A maximum continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Narrow stripe devices with as-cleaved facets are tested for 60°C (800 h) and 70°C (200 h) on-chip temperature. No noticeable degradation has been observed at 50 mW cw single mode output power. This shows the possibility of degradation-robust devices on foreign substrates. The technology opens a way for integration of various III-V materials and may target degradation-free lasers on silicon for further convergence of computing and communications.

Proceedings Article | 28 April 2005 Paper

Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers

Z. Mi, S. Fathpour, P. Bhattacharya, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Ledentsov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589891

KEYWORDS: Quantum dot lasers, Modulation, Laser damage threshold, Gallium, Quantum dots, Temperature metrology, Gallium arsenide, Electrons, Heterojunctions, Measurement devices

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Proceedings Article | 28 April 2005 Paper

Edge and surface-emitting tilted cavity lasers

N. Ledentsov, V. Shchukin, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Gordeev, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601953

KEYWORDS: Refractive index, Reflectivity, Gallium arsenide, Quantum wells, Semiconductor lasers, Waveguides, Vertical cavity surface emitting lasers, Electroluminescence, Near field, Reflection

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Proceedings Article | 31 January 2005 Paper

QD lasers: physics and applications

Nikolai Ledentsov, Alexey Kovsh, Vitaly Shchukin, Sergey Mikhrin, Igor Krestnikov, A. Kozhukhov, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov, Ilja Soshnikov, Alexey Zhukov, Efim Portnoi, Victor Ustinov, D. Gerthsen, Pallab Bhattacharya, N. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.570284

KEYWORDS: Gallium arsenide, Semiconductor lasers, Vertical cavity surface emitting lasers, Indium arsenide, Annealing, Quantum dots, Laser stabilization, Transmission electron microscopy, Heterojunctions, Indium gallium arsenide

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Proceedings Article | 1 September 2004 Paper

Mode locking of InGaAs quantum dot lasers

Mark Thompson, Kay Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545749

KEYWORDS: Mode locking, Oscilloscopes, Pulsed laser operation, Semiconductor lasers, Etching, Gallium, Quantum dot lasers, Quantum dots, Waveguides, Fourier transforms

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Proceedings Article | 2 August 2004 Paper

Tilted cavity laser (Critical Review Lecture)

Vitaly Shchukin, Nikolai Ledentsov, S. Mikhrin, I. Krestnikov, A. Kozhukhov, Alexey Kovsh, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.562390

KEYWORDS: Reflectivity, Semiconductor lasers, Electroluminescence, Quantum wells, Refractive index, Gallium arsenide, Quantum dots, Reflectors, Laser stabilization, Temperature metrology

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Proceedings Article | 18 June 2004 Paper

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

Alexey Kovsh, Nikolai Ledentsov, Sergei Mikhrin, Alexey Zhukov, Daniil Livshits, Nikolay Maleev, Mikhail Maximov, Victor Ustinov, Alexey Gubenko, Igor Gadjiev, Efim Portnoi, Jyh Shyang Wang, Jim Chi, Donald Ouyang, Dieter Bimberg, James Lott

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.531245

KEYWORDS: Semiconductor lasers, Gallium arsenide, Vertical cavity surface emitting lasers, Quantum wells, Continuous wave operation, Diodes, Mode locking, Gallium, Laser damage threshold, Laser applications

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Proceedings Article | 11 May 2004 Paper

Mode-locked quantum dot lasers for picosecond pulse generation

Mark Thompson, Kay Ti Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Matthias Laemmlin, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, V. Ustinov, A. Zhukov, A. Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.531284

KEYWORDS: Mode locking, Quantum dot lasers, Pulsed laser operation, Etching, Picosecond phenomena, Oscilloscopes, Semiconductor lasers, Quantum dots, Gallium, Spectrum analysis

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Proceedings Article | 11 May 2004 Paper

High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile

Roman Sellin, Dieter Bimberg, Victor Ustinov, Nikolai Ledentsov, Ilia Kaiander, Matthias Kuntz, Matthias Lämmlin, Kay Tan, Claudio Marinelli, Mark Thompson, Adrian Wonfor, Richard Penty, Ian White, David O'Brien, Stephan Hegarty, Guillaume Huyet, John McInerney, J. Kenton White

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528296

KEYWORDS: Quantum wells, Semiconductor lasers, Gallium arsenide, Mode locking, Waveguides, Gallium, Modulation, Laser damage threshold, Cladding, Diodes

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Proceedings Article | 25 July 2003 Paper

Recent advances in long-wavelength GaAs-based quantum dot lasers

Nikolai Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Mikhail Maximov, Yuri Shernyakov

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.474390

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Quantum dots, Semiconductors, Quantum wells, Indium arsenide, Semiconductor lasers, Gallium, Quantum dot lasers

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Proceedings Article | 1 July 2003 Paper

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil Livshits, Alexey Kovsh, Nikolay Maleev, Alexey Zhukov, Victor Ustinov, Nikolai Ledentsov, Zhores Alferov, Dieter Bimberg, Gray Lin, Jim Chi

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479825

KEYWORDS: Laser damage threshold, Continuous wave operation, Laser applications, Gallium arsenide, Semiconductor lasers, Indium arsenide, Gallium, Indium gallium arsenide, Vertical cavity surface emitting lasers, Temperature metrology

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