Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain 300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed up to 1480°C under a N2 pressure of 1 GPa (ultra-high-pressure annealing: UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type defects such as a divacancy (VGaVN). After annealing above 1000°C, vacancy clusters, such as (VGaVN)3, were introduced, and they were found to be remained even after 1480°C annealing. For Mg-implanted GaN with [Mg]=1018 cm-3, no large change in the depth distribution of Mg was observed before and after annealing at 1400°C. For the sample with [Mg]=1019 cm-3, however, Mg diffused into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted diffusion. The Mg diffusion was suppressed by sequential N-implantation, which was attributed to the reaction between Mg and vacancies under a N-rich condition. Interactions between vacancies, Mg, and H during UHPA were also discussed.
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