The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, are investigated to establish their baseline structural, optical, and surface properties in an as-deposited state. The same capping layer structures are then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure is analyzed in detail with transmission electron microscopy (TEM). Compared to other Ru-capping layer preparations studied here, it is the only one that shows grains with preferential orientation. This information is essential to model and optimize the performance of EUVL multilayers.
Recently, while performing extensive EUV irradiation endurance testing on Ru-capped multilayer mirrors in the presence of elevated partial pressures of water and hydrocarbons, NIST has observed that the amount of EUV-induced damage actually decreases with increasing levels of water vapor above ~5x10-7 Torr. It is thought that the admitted water vapor may interact with otherwise stable, condensed carbonaceous species in an UHV vacuum system to increase the background levels of simple gaseous carbon-containing molecules. Some support for this hypothesis was demonstrated by observing the mitigating effect of very small levels of simple hydrocarbons with the intentional introduction of methyl alcohol in addition to the water vapor. It was found that the damage rate decreased by at least an order of magnitude when the partial pressure of methyl alcohol was just one percent of the water partial pressure. These observations indicate that the hydrocarbon components of the vacuum environment under actual testing conditions must be characterized and controlled to 10-11 Torr or better in order to quantify the damage caused by high levels of water vapor. The possible effects of exposure beam size and out-of-band radiation on mirror lifetime testing will also be discussed.
The XCEED chamber was designed to allow diagnostic access to the conditions experienced by collecting optics for a discharge produced plasma (DPP) source. The chamber provides access for EUV photodiodes, sample exposure tests, Faraday cup measurements, and characterization of the ion debris field by a spherical sector energy analyzer (ESA). The Extreme Ultraviolet (EUV) light source creates a xenon z-pinch for the generation of 13.5 nm light. Typical EUV emission is characterized though a control photodiode. The chamber also allows characterization of optic samples at varying exposure times for normal and grazing incidence reflection angles during tests lasting up to 40 million pulses. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z-pinch is followed by ejection of multiply-charged ions which can significantly damage nearby mirror surfaces. Characterization of the ejecta is performed with an ESA that diagnoses fast ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ITOF-ESA is used to characterize both the energy and angular distribution of the debris field. In the current paper, the ESA is applied only to the ion debris emitted from the source. The effects of total particle flux on mirror samples are investigated through exposure testing. Samples are exposed to the source plasma and surface metrology is performed to analyze erosion and deposition effects on mirrors within the source chamber.
The University of Illinois at Urbana-Champaign (UIUC) and several national laboratories are collaborating on an SEMATECH effort to characterize xenon plasma exposure effects on EUV condenser optics. A series of mirror samples provided by SEMATECH were exposed for 10M shots in an Xtreme Technologies XTS 13-35 commercial EUV discharge plasma source at UIUC and 5M at the high-power TRW laser plasma source at Sandia National Laboratories. Results for both pre and post-exposure material characterization are presented, for samples exposed in both facilities. Surface analysis performed by the Center for Microanalysis of Materials at UIUC investigates mirror degradation mechanisms by measuring changes in surface roughness, texture, and grain sizes as well as analysis of implantation of energetic Xe ions, Xe diffusion, and mixing of multilayers. Materials characterization on samples removed after varying exposure times in the XTS source, together with in-situ EUV reflectivity measurements, identify the onset of different degradation mechanisms within each sample over 1M-100M shots. Results for DPP-exposed samples for 10 million shots in our XCEED (Xtreme Commercial EUV Exposure Device) experiment showed, in general, that samples were eroded and the surfaces were roughened with little change to the texture. AFM results showed an increase in roughness by a factor of 2-5 times, with two exceptions. This was confirmed by x-ray reflectivity (XRR) data, which showed similar roughening characteristics and also confirmed the smoothening of two samples. SEM pictures showed that erosion was from 4-47 nm, depending on the sample material and angle of incidence for debris ions. Finally, microanalysis of the exposed samples indicated that electrode material was implanted at varying depths in the samples. The erosion mechanism is explored using a spherical sector energy analyzer (ESA) to measure ion species and their energy spectra. Energy spectra for ions derived from various chamber sources are measured as a function of the Argon flow rate and angle from the centerline of the pinch. Results show creation of high energy ions (up to E = 13 keV). Species noted include ions of Xe, the buffer gas, and various electrode materials. The bulk of fast ion ejection from the pinch includes Xe+ which maximizes at ~8 keV followed by Xe2+ which maximizes at ~5 keV. Data from samples analysis and ESA measurements combined indicate mechanism and effect for debris-optic interactions and detail the effectiveness of the current debris mitigation schemes.
Experiments are presented that investigate the mechanistic cause of multilayer erosion observed from condenser optics exposed to EUV laser-produced plasma (LPP) sources. Using a Xe filament jet source excited with Nd-YAG laser radiation (300 mJ/pulse), measurements were made of material erosion from Au, Mo, Si and C using coated quartz microbalances located 127 mm from the plasma. The observed erosion rates were as follows: Au=99nm/106 shots, Mo= 26nm/106 shots, Si=19nm/106 shots, and C=6nm/106 shots. The relative ratio Au:Mo:Si:C of erosion rates observed experimentally, 16:4:3:1 compares favorably with that predicted from an atomic sputtering model assuming 20 kV Xe ions, 16:6:4:1. The relative agreement indicates that Xe-substrate sputtering is largely responsible for the erosion of Mo/Si multilayers on condenser optics that directly face the plasma. Time-of-flight Faraday cup measurements reveal the emission of high energy Xe ions from the Xe-filament jet plasma. The erosion rate does not depend on the repetition rate of the laser, suggesting a thermal mechanism is not operative. The Xe-filament jet erosion is ~20x that observed from a Xe spray jet. Since the long-lived (millisecond time scale) plasma emanating from these two sources are the same to within ~30%, sputtering from this long-lived plasma can be ruled out as an erosion agent.
Differently prepared Ru-capping layers, deposited on Mo/Si EUV multilayers, have been characterized using a suite of metrologies to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were tested for their thermal stability and oxidation resistance. Post-mortem characterization identified changes due to accelerated tests. The best performing Ru-capping layer structure was studied in detail with transmission electron microscopy to identify the grain microstructure and texture. This information is essential for modeling and performance optimization of EUVL multilayers.
Extreme ultraviolet (EUV) light sources are needed for next-generation lithography. A critical consideration in the development of such a source is the lifetime of collector optics. Frequent replacement of the mirror system will detract from the economic feasibility of EUV lithography. The Xtreme Commercial EUV Exposure Device (XCEED) at the University of Illinois has been designed to test the performance of various EUV mirror materials during operation of a commercial EUV source, and to investigate the mechanisms behind observed losses in reflectivity over a varying number of shots. Recently, four Mo/Si multilayer mirror samples were exposed in XCEED for variable numbers of shots, up to 40 million. The samples were analyzed to determine how the surface roughness was effected and how much material was eroded vs. time. XCEED also includes photodiodes to measure light output and light reflected from mirror samples, as well as a time-of-flight energy sector analyzer (TOF-ESA) for debris characterization. The results of these time-dependent exposures are presented in this work.
The critical issue related to advanced fuel plasma EUV sources is collector lifetime. The Illinois Debris-mitigation EUV Applications Laboratory (IDEAL) is continuing research with a dense plasma focus (DPF) light source. The IDEAL DPF electrodes have been redesigned in order to allow for advanced fuel testing, better pinch operation and increased debris generation. The DPF light source operates at negative polarity, 50 Hz, 3 kV and 7.5 Joules of energy per pulse with tetramethyltin [(CH3)4Sn] as an advanced fuel source. EUV output power is measured with filtered photodiodes and results from a gridded energy analyzer still show two primary ion components with a high-energy peak near 6keV. A Faraday-shielded immersed RF antenna provides a 2kW secondary discharge near the DPF for both pre-ionization and mitigation of the debris with a foil trap (>90%). In addition the Surface Cleaning of Optics by Plasma Exposure (SCOPE) facility has been constructed where evaporated and/or ion implanted metals can be deposited on and removed from EUV mirrors. In SCOPE metals were evaporated on to mirror samples held at various temperatures. A metal ion beam was also added to simulate the energetic erosive flux and a helicon plasma was used in situ to study plasma cleaning. Reactive ion etching of tin by chlorine and other gases has shown 500:1 selectivity factors and very high etch rates suitable to refresh an optical mirror surface within a few seconds. Mirror samples were analyzed at the Center for Microanalysis of Material where the diffusion and transport of the metals and surface roughness were studied for lifetime estimation. Lastly, the Xtreme Characterization EUV Experiment Device (XCEED) was used for characterization of the debris has been accomplished by use of an energy sector analyzer in combination with ion time-of-flight. This diagnostic has been designed to measure velocity, mass and charge states of the incoming ions and neutrals, giving discrete debris spectra while in negative polarity operation. Latest results will be presented based on this work.
A critical issue in the realization of EUV lithography (EUVL) as a production technology is the lifetime of the condenser, the optic in closest proximity to any compact, high-power EUV source. During operation of the Engineering Test Stand (ETS), a full-field, high-power EUVL alpha tool, the silicon/molybdenum multilayer mirrors used as a condenser were eroded by extended exposure to the LPP source. The erosion rate varied considerably, and diagnostic instrumentation on the ETS was not intended to address this issue, so the cause of this erosion was not determined at the time. We present here the results of experiments in which samples of gold, molybdenum, and silicon were exposed to an LPP using a liquid xenon jet as the target. The measured erosion rates suggest a sputtering mechanism. Observations of the plasma environment at the condenser position show the presence of fast ions, which, if they are xenon, have kinetic energies of tens of keV. Such ions would contribute significantly to condenser erosion.
Silicon capped [Mo/Si] multilayer mirrors (MLM’s) can undergo oxidation by the combined effects of radiation (Extreme Ultraviolet [EUV], electron) and water vapor. This parametric study provides silicon-capped MLM oxidation rate data. The goal of this study was to determine the dependence of silicon oxidation on water vapor pressure and radiation flux density over three orders of magnitude. Previous work1 has shown that electron and 95.3 eV EUV exposures produce similar oxidation. The present study verifies that correlation and examines the effects of EUV and electron flux on the oxidation rate of the Si-capping layer. E-beam and EUV exposed areas on silicon-capped MLM samples were analyzed following radiation exposure by Auger depth profiling to determine the thickness of the oxide grown. A ruthenium (Ru) capped MLM was also exposed for 4-hours, however it showed very little oxidation under the most extreme conditions of our test matrix. Also the effect of varying the primary e-beam voltage (0.5-2.0 keV) on Si-capped MLM was examined, which showed that exposures in the 1-2 keV range produce similar results.
The next suite of optical lithography tools beyond 193nm will use 157nm irradiation to illuminate the mask pattern onto a semiconductor wafer. As the illumination wavelength decreases, the number of materials that can be used to create attenuated phase shift masks decreases dramatically. Especially the number of materials that maintain constant transmission after prolonged irradiation. The Ta-based and Cr-based materials have been recognized as two such sets of materials that remain optically unchanged due to prolonged VUV irradiation. Optical characterization of these materials by spectroscopic ellipsometry has been used to simulate several material systems to achieve proper transmission and phase shift while simultaneously improving the inspection contrast of the patterned mask. Both simulation and experimental results will be presented for Ta-based and/or Cr-based material systems that maintain relatively constant transmission for more than 50 million pulses under 157nm irradiation.
Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50-nm node. The inspection contrast of DUV and 193nm optical reticles is essentially 100%; however, EUVL reticles are reflective in nature and do not allow for transmissive inspection. The Mo/Si multilayer (ML) mirror has a reflectivity of 55-60% with 257nm illumination. The reflectivity of the multilayer at the inspection wavelength dictates that the patterned areas of the mask must be dark to achieve high inspection contrast (i.e., 0% reflectivity at the inspection wavelength). Furthermore, the reticle should retain the same tone during the pre-repair stage and the final reticle stage to allow reuse of inspection algorithms and easier defect repair verification. The use of an anti-reflection coating (ARC) on a TaN absorber has been shown . This article will describe additional options for a wide range of anti-reflection coatings and their impact on the design and fabrication of the EUV absorber stack. Both experimental and modeling results will be presented for different absorber stack configurations.
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