KEYWORDS: Optical amplifiers, High power lasers, Fiber amplifiers, High power fiber amplifiers, Scanning probe microscopy, Dispersion, Pulsed laser operation, Picosecond phenomena, Frequency modulation, Optical filters, Amplifiers, Systems modeling, Gaussian filters
We report main features of spectral compression of parabolic pulses in nonlinear optical fibers. It is shown that the variational analysis correctly describes evolution of pulse parameters during spectral compression. The model of cascade amplifier system employing spectral compression is developed to achieve superior spectral densities. The proposed configuration is promising as optical pulse preamplifier for operation in the high-energy pulse laser systems.
We report theoretical and experimental study of tapered double-clad fibers (T-DCF) and consider various amplifiers and lasers using this fiber as a gain medium.
We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the < 40 nm tuning range make the laser a promising tool for medical treatments that rely on photosensitizing agents and biomarkers in the transmission window of tissue between 700 and 800 nm. The InP-based gain structure of the laser was wafer-fused with a GaAs-based bottom mirror and thermally managed with an intracavity diamond heat spreader. The structure was pumped with commercial low-cost 980 nm laser diode modules. Laser emission at 1490 nm was frequency-doubled with a bismuth borate crystal that was cut for type I critical phase matching. At the maximum output power, we achieved an optical-to-optical efficiency of 8.3% with beam quality parameter M2 below 1.5. The laser wavelength could be tuned with an intracavity birefringent plate from 720 to 764 nm.
We report on green (550–560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P–(Al0.8Ga0.2)0.5In0.5P double p–i–n heterostructures with monolayer–scale tensile strained GaP insertions in the cladding layers and light–emitting diodes (LEDs) based thereupon. The structures are grown side–by–side on high–index and (100) GaAs substrates by molecular beam epitaxy. Cross–sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP–barrier substrate orientation–dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)–grown strictures, the EL spectra of (211) and (311)–grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high–index substrates. The integrated intensity of (311)–grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)–grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation–dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p– doped (Al0.8Ga0.2)0.5In0.5P cladding layers.
We present a master oscillator power amplifier (MOPA) system that comprises a mode-locked semiconductor disk laser (SDL) emitting at 1.33 μm and a bismuth-doped fiber amplifier. The mode-locked SDL was fabricated by wafer bonding an InP-based gain section with a GaAs-based distributed Bragg reflector (DBR) using (3-Mercaptopropyl)-trimethoxysilane. The bismuth-doped fiber amplifier was pumped with a continuous wave SDL emitting at 1.18 μm. The MOPA system produced pulses at a repetition rate of 827 MHz with a pulse energy of 0.62 nJ, which corresponds to an average output power of more than 0.5 W.
Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3–1.6 μm are also discussed.
Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.
Optical pulse generation and compression have been numerically studied in anomalous dispersion
decreasing fibers (DDF). We show that evolution of modulation instability observed with chirped
wave packets in tapered fibers produces the mechanism for generation of ultra-short pulses with
high repetition rates. The role of modulation instability and Raman self-scattering has been also
discussed. The simulations show that pulse chirping enhances self-Raman scattering at early stages
of pulse propagation and improves compression of the generated pulses. It is also shown that the
presence of amplitude and frequency modulation of the seed wave provide essential impact on the
pulse train formation. The new method for increasing the pulse train repetition rate through
frequency modulation of the seed wave has been proposed.
Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga)As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the “flip-chip” configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the “flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.
Mode-locking an optically pumped semiconductor disk laser has been demonstrated using low-loss saturable absorption containing a mixture of single-walled carbon nanotubes in PMM polymer. The modulator was fabricated by a simple spin-coating technique on fused silica substrate and was operating in transmission. Stable passive fundamental modelocking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.
We report the solid-state Cr:ZnS laser mode-locked by CNT-based saturable absorber. The absorber was deposited on a protected silver mirror used as a high reflector mirror in a standard 250-MHz cavity with chirped mirror GDD compensation. Laser pulses with duration of 61 fs were obtained at 2.35 μm wavelength. The output power was limited at 950 mW, corresponding to the pulse energy of 3.8 nJ. We have demonstrated the longest-wavelength mid-IR CNT-mode-locked laser with record parameters, advancing the carbon nanotube mode-locking technology well beyond 2 μm into the mid-IR.
We have experimentally investigated fundamental mode propagation in few-meter-long adiabatic step-index tapers with high numerical aperture, core diameter up to 117μm (V=38), and tapering ratio up to 18. We confirmed single fundamental mode guiding in tapers with uniform core index profile by several experiments. We observed an annular near field distribution and degraded beam quality for large output core diameters, found to occur due to intrinsic mechanical stress in the fibers. We expect that eliminating the stress would prevent the mode deformation and allow constructing single-mode, diffraction-limited tapered large-mode-area amplifiers with a good beam shape.
Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of
6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency
regime at 1550 nm. First wafer-fused electrically pumped VECSELs emitting at 1470 nm demonstrate maximum CW output power of 6.5 mW which represents more than 10-times improvement compared with previously published results.
We present a comparative theoretical and experimental study of different schemes of fiber lasers with tapered doubleclad
fiber (T-DCF) as an active medium. We have developed a theoretical model for obtaining the distribution of power
and power density inside the fiber for the considered laser schemes with different longitudinal shapes of T-DCFs. The
slope efficiencies, spectral characteristics, and beam quality deterioration associated with the mode conversion in the TDCF
were also studied experimentally for different laser schemes. In addition, a spontaneous transition to a self-pulsing
regime under certain conditions, and the associated problems have been investigated. Characteristics of T-DCF lasers
constructed in co- and counter-propagating schemes are discussed and compared to those of regular fiber lasers,
equivalent in active volume or in brightness.
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040
nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The
number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of
the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be
practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management
approaches are studied and compared.
The concept of multiple gain element cavity was applied for power scaling a passively mode-locked semiconductor disk
laser. 400 mW of average output power for the laser with a single gain element was boosted to 900 mW for the laser with
the dual gain cavity. The increase in output power was accompanied by an increase in the order of mode-locking
harmonic.
Optically-pumped semiconductor disk lasers (SDLs) represent a proven approach for generation of multi-watt output
powers with excellent beam quality [1-6]. They combine many advantages of solid-state lasers with the added benefit of
wavelength tailoring provided by the semiconductor gain material. During the past few years a wafer fusion technique
has been used extensively in the producing of vertical-cavity surface-emitting lasers operating at the telecom
wavelengths of 1.3 - 1.55 μm. This technique allows the integration of non-lattice-matched semiconductor materials, e.g.
GaAs and InP, which cannot be grown monolithically. Here we describe the first wafer fused SDLs operating at the
wavelength of 1.3 and 1.57 μm in both continuous-wave and mode-locked regimes.
The quantum dot semiconductors provide an interesting alternative to quantum-well (QW) structures since these
materials alleviate the requirement for lattice matching. Recently, we have demonstrated first quantum dot based gain
medium in SDL architecture. Since then, different wavelengths have been demonstrated both in continuous-wave and
mode-locked regimes with a performance comparable to quantum-well-based lasers. The (AlGaIn)(AsSb) material
system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range. Latticematched
or strain-compensated structures employing InGaAsSb as an active material and AlGaAsSb for barrier and
cladding layers grown on GaSb substrates are demonstrated to be compounds of choice for long-wavelength lasers and
photodetectors. In this study we report an optically-pumped semiconductor disk laser emitting radiation around 2.5 μm
tunable over 130 nm. To our knowledge, this is the widest spectral range reported to date at this wavelength.
We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The
reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski-
Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both
elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2<1.2. The loss induced by the
nonlinear crystal is compensated by gain boosting in the dual-gain laser and 2.5 W of output power at 590 nm was
achieved after frequency conversion.
A method to carry out the compression of parabolic pulse in the nonuniform fibre cascade was proposed. The periodic
modulation of the dispersion along the fibre length can be used to control subpicosecond pulses in time and frequency
domains. Good agreement between simulations and experimental data takes place.
In this work, we have constructed an actively Q-switched T-DCF laser with an acousto-optic modulator (AOM).
Actively Q-switched laser with T-DCF generated stable emission at 1065 nm over a wide repetition rate range of 0 Hz -
150 kHz, with the highest measured pulse energy of 1.6mJ limited by stimulated Brillouin scattering (SBS). We attribute
the robust operation at low duty cycles to the intrinsically low amplified spontaneous emission (ASE), provided by the
tapered fiber shape.
In addition to the advantage of the large mode area at the output end of the fiber, the T-DCF provides several other
attractive features. First, the vignetting of co-propagating ASE results in ASE power loss in wide-to-narrow end
propagation. Second, the low-mode nature of counter-propagating spontaneous emission, arising from mode selection in
the narrow part of the fiber, leads to weaker amplification of the spontaneous emission. These two effects contribute to
the low ASE background. Finally, fiber diameter modulation is a known method for SBS suppression, and another
inherent property of the T-DCF. These characteristics allowed for generation of 1.6mJ, 64 ns pulses at very low duty
cycles, up to single shot operation, illustrating the potential of the T-DCF for high-energy pulse generation and
amplification.
1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/
GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4
K/W. Maximum CW output of devices with5 groups of quantum wells show CW output power of 2.7 W from 180μm
apertures in both 1300-nm and 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with
the same aperture size show CW output of 4.8 W. These devices emit a high quality beam with M² beam parameter
below 1.6 allowing reaching a coupling efficiency into a single mode fiber as high as 70 %. Maximum value of output
power of 6.6 W was reached for 1300nm wavelength devices with 290μm aperture size.
We report the theoretical and experimental study of the properties of an active tapered double clad fiber (T-DCF).
Optimization of the most important parameters of T-DCF such as tapering ratio, longitudinal profile, core/clad ratio and
absorption have been considered. Using optimized T-DCF design we have demonstrated a high-power (750W) and
highly efficient (80%) ytterbium fiber laser.
A single-mode fiber with a linear or sinusoidal variation in the group-velocity dispersion is designed and fabricated.
The nonreciprocal effects and pulse compression due to the longitudinal oscillations of the fiber dispersion are
experimentally demonstrated. The periodic modulation of the dispersion can be used to control precisely the
pulse dynamics.
The novel microstructured optical fibres (MOF) with suspended core design guiding linear and quasi-circular polarized
modes has been developed which demonstrates linear birefringence scalable in a range 5×10-4 to 2×10-2 by tuning the
core size. The SPUN type of this MOF exhibits a high magneto-optical effect for sensitive coil diameter of 5 mm and
shows no degradation of performance, e.g. optical losses and magneto-optical sensitivity, for turns number of 102÷104.
The transmission losses are 2÷4 dB/km and the magneto-optical sensitivity approaches the value of 70% of theoretical
limit for small diameter coil. The potential applications of such MOF in gyro and optical current transformer will be
discussed.
We present a gallium antimonide-based semiconductor saturable absorber mirror (SESAM) operating at 2 μm
wavelength region. GaSb-based material system is the preferred choice for fabricating surface-normal devices operating
beyond 2 μm because it enables the use of highly reflective semiconductor reflectors and quantum wells for wide
wavelength range. For the purpose of generating short laser pules, the SESAM was carefully designed to attain a large
modulation depth. The device was utilised successfully to passively Q-switch a 2 μm Tm3+-/Ho3+ -doped fiber laser,
demonstrating record-short Q-switch pulses of about 20 ns.
A wafer fusing was applied to integrate an InP-based active medium and a GaAs/AlGaAs distributed Bragg reflector in
an optically pumped semiconductor disk laser. Over 50 mW of output power at room temperature in 1570-1585 nm
spectral range was demonstrated. The results of this study reveal an important finding: the wafer fusion can be used in
emitters with high power. This approach would allow for monolithic integration of lattice-mismatched compounds,
quantum-well and quantum-dot based media and promises substantial wavelength tailoring of semiconductor disk lasers.
We report a passively mode-locked optically pumped semiconductor disk laser with emission at 1220 nm. Both the gain
and the semiconductor saturable absorber mirrors used to build the laser are based on InGaAsN/GaAs quantum wells
fabricated by molecular beam epitaxy. The growth parameters have been optimized to reduce the detrimental effects of
nitrogen on the emission efficiency. Using a gain mirror comprising ten GaInNAs quantum wells with a relatively low
nitrogen content and a saturable absorber mirror incorporating two GaInNAs quantum wells, we demonstrate generation
of pulses with durations of ~5ps and average powers up to 275mW. We describe the fabrication procedure of the
semiconductor structures and the results of laser characterization.
We review recent results concerning the development of GaSb-based heterostructures for semiconductor disk lasers. We
focus on fabrication and design details of gain and semiconductor saturable absorber mirrors used to demonstrate disk
lasers exhibiting high output power, broad tunability, and short pulse generation. We demonstrate a 2 μm gain structure
with 15 InGaSb quantum wells emitting more than 4 W of output power at 15°C. Almost 1W output power was
measured at an elevated temperature of 50°C. A tuning range of more than 150 nm was achieved by employing a gain
mirror comprising quantum wells with different widths to provide broadband gain. Ultra-short pulse generation based on
synchronous mode-locking and a preliminary demonstration of passively mode-locked semiconductor disk lasers based
on GaSb saturable absorber mirrors are also discussed.
Pump propagation and absorption in active tapered double-clad fiber has been analyzed based on a ray optics approach.
Optimization of the longitudinal shape, absorption and angular distribution of the pump beam allowed for power scaling
of a ytterbium fiber laser up to 600 W with high beam quality (M2≤1.08) and a slope efficiency of 63%. It is shown that
the influence of vignetting in a tapered fiber can be avoided, resulting in high overall efficiency, in good agreement with
the presented model.
We report an essential progress towards the development of efficient GaInNAs-based semiconductor disk lasers
operating at 1220 nm spectral range. The gain mirrors were fabricated by molecular beam epitaxy using a radio
frequency plasma source for incorporating the nitrogen. The typical structure consisted of a 30-pair GaAs/AlAs
distributed Bragg reflector and 10 GaInNAs quantum wells with relatively low content of nitrogen. The growth
parameters and the composition of the structures have been optimized to reduce the detrimental effect of nitrogen on the
emission efficiency. We have achieved a maximum output power of 3.5 W and a differential efficiency of 20%.
We demonstrate that resonant high-modulation-depth saturable absorbers allow efficient pulse shortening in Q-switched
lasers. Using a 70% modulation depth resonant saturable absorber mirror we achieved 8 ns pulses that are close to the
limit set by the cavity length and are, to our knowledge, the shortest pulses demonstrated to date from passively Qswitched
fiber lasers.
We report tunable thulium/holmium-doped single mode fiber laser passively Q-switched by an antimonide-based
semiconductor saturable absorber mirror (SESAM) and boosted in Tm/Ho amplifier up to 2 W of average power. Pulse
operation tunable from 1960 nm to 1990 nm with pulse energies up to 30 μJ has been achieved. The study presents the
first demonstration of 2 μm Q-switched fiber laser using antimonide semiconductor technology.
We demonstrate here an all-fiber passively mode-locked laser using an integrated fiber-end mirror and photonic band-gap
fiber-based dispersion compensator. The refined technology of thin-film coatings made with electron beam
evaporation on a single-mode fiber facet results in a compact dichroic pump combiner/output coupler. The dichroic
mirror made of ZrO2 and SiO2 provides a low reflectivity (0.4 %) for the 980 nm pump and over 40 % reflectivity for the
1040 nm signal wavelength, which enabled us to build a short-length mode-locked ytterbium fiber laser. The laser cavity
consisted of 8 cm of highly doped ytterbium fiber, 10 cm of anomalous dispersion photonic bandgap fiber, a
semiconductor saturable absorber mirror (SESAM) and the dichroic mirror. Pump and signal wavelengths were
separated by a fiber coupler placed outside the cavity contrary to conventional geometry. A butt-coupled SESAM
provided reliable self-starting at a pump power of 150 mW. The all-fiber design using dichroic fiber mirror combined
with photonic bandgap fiber dispersion compensator is highly stable and requires virtually no alignment. The mode-locked
laser produces 572-fs soliton pulses at 571.03 MHz fundamental repetition rate. To the best of our knowledge,
this is the highest fundamental repetition rate fiber laser operating around 1 μm reported to date.
Semiconductor Disk Lasers (SDLs) are compact lasers suitable for watt to multi-watt direct generation in the 670-
2350nm waveband and frequency-doubled operation in the ultraviolet and visible regions. This is, however, critically
dependent on the thermal management strategy used as, in this type of laser, the pump is absorbed over micrometer
lengths and the gain and loss are temperature sensitive. In this paper, we compare the two heat dissipation techniques that
have been successfully deployed to-date: the "thin device" approach where the semiconductor active mirror is bonded
onto a heatsink and its substrate subsequently removed, and the "heatspreader" technique where a high thermal
conductivity platelet is directly bonded onto the active part of the unprocessed epilayer. We show that for SDLs emitting
at 1060nm with pump spots of ~80µm diameter, the heatspreader approach outperforms the thin-device alternative, with
the best results being obtained with a diamond heatspreader. Indeed, the thermal resistances are measured to be 4.9, 10.4
and 13.0 K/W for diamond-bonded, SiC-bonded and flip-chip devices respectively. It is also observed, as expected, that
the thermal management strategy indirectly affects the optimum output coupling and thus the overall performance of
these lasers.
Owing to their good beam quality and high output power, near-infrared semiconductor disk lasers provide an attractive
opportunity for visible light generation via frequency conversion. The typical cavity arrangement of a semiconductor
disk laser, consisting of a semiconductor multiple quantum well gain mirror and one or more external mirror, offers a
convenient configuration for intracavity frequency doubling. Recent progress in the disk laser development has led to
demonstrations of multi-watt green-blue-yellow sources. These achievements have been enabled by the possibility to
integrate high performance InGaAs/GaAs gain media and Al(Ga)As/GaAs Bragg reflectors operating in the 940-1160
nm wavelength range. In order to achieve ~620 nm red emission, a laser emitting near the fundamental wavelength of
1240 nm is needed. To achieve this spectral range we have developed GaInNAs/GaAs gain mirrors and we have
achieved 1 W of output power at 617 nm by frequency doubling in a BBO crystal. This is to our knowledge the highest
power reported to date for intracavity doubled disk laser based on dilute nitride gain material.
Second harmonic generation via periodically-poled nonlinear materials offers an efficient means of generating high-quality
visible light at wavelengths that would be otherwise unattainable with traditional laser sources. While this
technology has the potential for implementation in many mass-industrial applications, temperature stability
requirements, often as restrictive as 0.1°C, can make packaging with a pump source problematic. In this work we are
investigating the use of synthesised response PPLN gratings to create crystals that are better suited to visible SHG. Our
route towards addressing this issue is to convert the standard sinc-shaped temperature-tuning response of a uniform
grating to a flat-top temperature tuning function with widths of up to several degrees. We have achieved a
computationally efficient means of designing such gratings with a required temperature tuning profile based on a
simulated annealing algorithm using repeated local changes of grating layout and subsequent Bloembergen-style
analysis of the second harmonic, successive iterations of which quickly lead to the desired temperature tuning profile.
Using our high fidelity poling technique we have fabricated synthesised response PPLN with precise placement of poled
domains in Lithium Niobate based on the designs from our mathematical models. Measurements on these initial devices
provide more than 4°C flat-top temperature stability, albeit with a corresponding loss in operational efficiency. Our aim
is to implement improved designs in magnesium-doped Lithium Niobate for packaging with near-room temperature
diode-based pump sources, as could be applied towards RGB TV and projector applications.
We present new approaches for power scaling and tunability in semiconductor disk lasers. The novel concepts allow for
reduced thermal load of the gain material, increasing the threshold of rollover and extending the capability for boosting
the output power without significant degradation in the beam quality. The proposed technique for power scaling of
optically-pumped semiconductor disk lasers is based on the multiple gain scheme. The method allows for significant
power improvement while preserving good beam quality. Total power of over 8 W was achieved in dual-gain
configuration, while one-gain lasers could produce separately about 4 W, limited by the thermal rollover of the output
characteristics. The results show that reduced thermal load to a gain element in a dual-gain cavity allows extending the
range of usable pump powers boosting the laser output.
Tunable Sb-based semiconductor disk laser operating at 2-&mgr;m is demonstrated with nearly 100 nm operation range. The
maximum output is 210 mW and the 3dB tuning range spans from 1946 to 1997 nm. The wavelength tuning is based on
an intracavity birefringent filter. The potential of semiconductor disk lasers for high repetition rate ultrashort pulse
generation using harmonic mode-locking is also discussed. We report on optically-pumped vertical-external-cavity
surface-emitting lasers passively mode-locked with a semiconductor saturable-absorber mirror. The potential of
harmonic mode-locking in producing pulse trains at multigigahertz repetition rates has been explored. The results present
first systematic study of multiple pulse formation in passively mode-locked VECSELs.
We propose and demonstrate a new method to reduce the absorption recovery time of semiconductor saturable absorber
mirrors operating at the 1060-nm wavelength range. The method is based on controlling the amount of nonradiative
recombination centers within the absorbing region by incorporating an InGaP epitaxial layer with a relative large lattice
mismatch to GaAs (~2.2 %). The defect density within the absorbing region can be controlled by the thickness of a GaAs
buffer layer grown between the InGaP lattice mismatched layer and the InGaAs/GaAs quantum-wells. For thickness of
the GaAs buffer of ~110 nm and ~570 nm the absorption recovery time was ~5 ps and ~10 ps, respectively. It is
important to note that the fast recovery time was achieved without degrading the nonlinear optical properties of the
saturable absorber mirror. The practicality of the structures was proved by demonstrating a reliable self-starting
operation of a mode-locked Yb-doped fiber laser.
We discuss a new method to shape the temporal response of saturable absorption in semiconductors. In particular, we
investigate the possibility to control independently the absorption recovery time of each quantum-well forming the
semiconductor absorber. The recovery time is tailored by irradiation with nitrogen ions produced by an RF-plasma
source. The irradiation is performed in-situ as one step of the epitaxial growth process; the quantum-wells are
individually exposed to a flux of N-ions after they are grown. The amount of non-radiative recombination centers within
the quantum-wells is strongly related to the time interval during which the N-ions flux is active and to the thickness of
the semiconductor layer grown on top of each quantum-well before the irradiation is performed. We apply this method to
fabricate fast semiconductor saturable absorbers operating in the 1-&mgr;m wavelength range. The absorption recovery time
could be changed from 300 ps to 10 ps without degradation of the nonlinear optical response. The practicality of the
design is finally proved by using the semiconductor saturable absorbers for mode-locking Yb-doped fiber lasers.
Wavelength conversion with high contrast ratio and low OSNR penalty has been achieved by using a resonant vertical-cavity all-optical switch based on saturable absorption in multiple-quantum-wells. The device was grown by MBE on InP substrate. It comprised a 19.5 pairs n+-Ga0.47In0.53As/InP bottom DBR, 28 Ga0.47In0.53As QWs, and a 50% reflective top dielectric mirror. We carried out conversion experiments between a wavelength-tunable modulated pump signal and a CW beam with a wavelength matching the Fabry-Perot resonance of the switch. Using a 622 Mb/s modulated pump with an average power of only 6-dBm we have demonstrated a 15 dB extinction ratio for the converted signal. The wavelength conversion process exhibited a weak dependence on the pump signal wavelength; we have achieved wavelength conversion in a range of 20 nm. BER/OSNR measurements on the wavelength converted data signal indicated a maximum OSNR penalty (at a BER=10-9) of about 2.5 dB, with respect to the input pump data, over the entire conversion range. Error free operation was observed up to 2 Gb/s when device performance degraded due to its long absorption recovery time. However, with further optimization, the device recovery time could be reduced to the picosecond range, extending its application to much higher date rates.
We present the Raman spectra of sulfur-containing biomolecules and the spectra measured in far-infrared region with
the use of terahertz (THz) time-domain spectroscopic technique. The spectral features in THz and Raman spectra are
different among sulfur-containing di- and tetrapeptides in powder. We are discussing the possibility to observe and to
assign the low-frequency THz and Raman lines to the disulfide bridges.
Wavelength conversion with high contrast ratio and low OSNR penalty has been achieved by using a resonant vertical-cavity all-optical switch based on saturable absorption in multiple-quantum-wells. The device was grown by MBE on InP substrate. It comprised a 19.5 pairs n+-Ga0.47In0.53As/InP bottom DBR, 28 Ga0.47In0.53As QWs, and a 50% reflective top dielectric mirror. We carried out conversion experiments between a wavelength-tunable modulated pump signal and a CW beam with a wavelength matching the Fabry-Perot resonance of the switch. Using a 622 Mb/s modulated pump with an average power of only 6-dBm we have demonstrated a 15 dB extinction ratio for the converted signal. The wavelength conversion process exhibited a weak dependence on the pump signal wavelength; we have achieved wavelength conversion in a range of 20 nm. BER/OSNR measurements on the wavelength converted data signal indicated a maximum OSNR penalty (at a BER=10-9) of about 2.5 dB, with respect to the input pump data, over the entire conversion range. Error free operation was observed up to 2 Gb/s when device performance degraded due to its long absorption recovery time. However, with further optimization, the device recovery time could be reduced to the picosecond range, extending its application to much higher date rates.
We present an erbium-doped fiber laser mode-locked using a reverse-biased InGaAsP multiple quantum-well saturable absorber. We have examined the performance of a p-type-intrinsic-n-type (PIN) structured semiconductor absorber mirror both in starting the pulse operation and in pulse shaping. We have also found that applying a reverse bias is a useful means to suppress the Q-switching instability. By varying the reverse bias voltage applied to the absorber mirror, we could change the recovery time of the device owing to the electric-field-induced carrier sweep-out. Through the sweep-out process we were able to control the mode-locking start-up capability and the pulse duration of the fiber laser. In the experiment the mode-locked pulse duration could be reduced from 50 to 20 ps by application of an 80 kV/cm sweep-out field in the intrinsic region of the PIN absorber. The equivalent spectral broadening by a factor of 2.5 was observed as well.
Detecting weapons concealed underneath clothing, analyzing the contents of suspicious-looking envelopes, or even spotting the onset of cancer: these are just some of the exciting prospects that have been turning terahertz wave research into one of the most important topics in photonics. Most broadband pulsed THz sources are based on the excitation of different materials with ultrashort laser pulses. So far, generation of tunable narrow-band THz radiation has been demonstrated using ultrafast solid state lasers as a source of high-intensity optical pulses. The lack of a high-power, low-cost, portable room-temperature THz source is the most significant limitation of modern THz systems. Advances in fiber laser technology can be used to further the capabilities of the homeland security. Using semiconductor saturable absorber mirrors allows for reliable mode-locked operation with different values of cavity dispersion in a broad spectrum ranged from 900 to 1600 nm. Semiconductor saturable absorbers mirrors have been used successfully to initiate and to sustain mode-locking in a wide range of core-pumped fiber lasers. The main advantage of the semiconductor saturable absorber mirrors (SESAM) is the possibility to control important parameters such as absorption recovery time, saturation fluence and modulation depth through the device design, growth conditions and post-growth processing. The SESAM as a cavity mirror in the fiber laser results in compact size, environmentally stable and simple ultrashort pulse lasers that can cover wide wavelength range and generate optical pulses with durations from picoseconds to femtoseconds. Employing SESAM technology for mode-locking, the double-clad fiber laser promises superior pulse quality, high stability and pulse energy without need for power booster that eventually degrades the pulse quality due to nonlinear distortions in the amplifier fiber.
We give an overview of recent achievements in ultrafast fiber lasers; discuss basic properties, technical challenges and methods to achieve stable short pulse operation with high average and peak powers from all-fiber devices. The important aspects of the mode-locked fiber lasers relevant to practical security systems are presented. Particularly, the effect of the amplified spontaneous emission (ASE) on the performance of the SESAMs in mode-locked fiber lasers has been investigated. We show that high level of ASE intensity typical for fiber lasers can saturate the absorption and degrade significantly the nonlinear response of the SESAM. We studied the effect of the absorber recovery time and demonstrated that the ion-irradiated SESAMs with fast nonlinear response are less affected by the ASE radiation and, consequently, in the presence of the high-power ASE they exhibit better self-starting capability compared with slow absorbers. The promising method for noise suppression based on the cavity-enhanced optical limiting is another important issue described. Optical limiting and saturable absorption are studied by placing two-photon absorption material and InGaAs quantum wells in a microcavity. We show that field enhancement that occurs in a cavity affects strongly the limiting threshold and dynamic range of roll-over in the nonlinear response.
To achieve energy levels sufficient for different security systems, power scaling technique should be employed. We present a stretched-pulse double-clad ytterbium-doped fiber laser mode-locked with SESAM. High modulation depth in the nonlinear response of the SESAM allows for self-starting pulse operation without any dispersion compensation in the laser cavity. The chirp on the output pulses is highly linear and can be compensated for with dispersion in photonic bandgap fiber. The results is a fully self-starting source of 150-fs pulse with 63-nJ of energy at a 8-MHz repetition rate.
Ultrafast lasers can be used to produce laser pulses with enormous peak powers and power densities. The very high peak power that can be achieved with femtosecond pulses means that in principle, nonlinear frequency conversion should be very efficient. It should be quite straightforward to use second-harmonic (SHG), third-harmonic (THG) and fourth-harmonic generation (FHG) to produce femtosecond pulses in the near- to deep-ultraviolet. We present results on a mode-locked Yb3+-fiber laser operating in the 980 nm spectral band. Such lasers are very attractive as a seed source for generating blue light using SHG. The laser comprised a linear fiber cavity defined by the fiber loop-mirror and the semiconductor saturable-absorber mirror (SESAM) used to self-start the mode-locking. SESAM operating in the 940-1050 nm wavelength-range comprised 26 pairs of AlAs/GaAs quarter-wave layers that form a distributed Bragg reflector with a center wavelength at about 1000 nm. The active region consists of five GaInNAs quantum wells embedded within GaAs layers. With proper alignment of the laser cavity, the laser was self-starting for pump powers above 50 mW at 915 nm. The output mode-locked pulse train at about 980 nm had an output power of 3 mW, a repetition rate of 30 MHz and pulse duration of 2.3 ps. The pulse spectrum exhibited soliton sidebands at all pump powers, confirming that the laser operates in the anomalous-dispersion regime. The time-bandwidth product was equal to 0.47, indicating that the pulses were nearly bandwidth-limited with Gaussian temporal and spectral profiles. The average value of the cavity dispersion near 1 µm, estimated from the soliton sidebands, was -1.6 ps2. With a master oscillator power amplifier configuration (MOPA) more than 200 mW of the output power is expected with just two single-mode pump laser diodes.
We report here a compact diode-pumped fiber laser that represents a promising route to designing a portable picosecond light source that is rugged and compact. The laser design presented in this paper is based on a high-contrast semiconductor saturable absorber mirror (SESAM) and targets a reliable picosecond-range fiber laser. The cavity is simple, since no dispersion compensators are used, the SESAM-based mode locking mechanism is robust, and self-starting resulted in low-maintenance turn-key operation. We investigated pulse formation in a short-length fiber cavity and found that nonlinear effects in a near-resonant SESAM in combination with the large cavity dispersion are the predominant mechanism that causes self-starting and stabilization of mode-locking. The effect of the recovery time of the SESAM on the stretched-pulse width and spectrum for resonant-type absorber mirrors was also studied.
We demonstrate a practical ultra-fast Nd-doped fiber laser operating in the 894-909 nm spectral range, in both soliton and stretched pulse dispersion supporting regimes. Using purposely designed semiconductor saturable absorbers, a truly self-started mode-locking regime of operation with clean, transform limited pulses, was achieved.
We demonstrate a highly efficient and low threshold passively mode-locked femtosecond Yb:KYW laser pumped by an InGaAs narrow-stripe laser diode and which incorporates a semiconductor saturable absorber mirror. Near-transform limited pulses of 123fs at 1047nm were produced at an average mode-locked power of 107mW for only 308mW of incident pump power. An optical-to-optical conversion efficiency of 35% was achieved and the corresponding electrical-to-optical efficiency exceeded 14%.
The paper presents a practical method for fabricating wavelength-selective fused-type couplers. The detailed procedure is described, which allows for reliable fabrication of coupler with arbitrary parameters of wavelength channels. The simple model for the single-mode fused tapered coupler was used to validate the method and to define the technological limits.
This paper reviews recent progress in ultrashort pulse generation with mode-locked fiber lasers utilizing semiconductor saturable absorbers to initiate the mode-locking mechanism and to stabilize the laser pulse train. The saturable absorbers were monolithically grown by molecular beam epitaxy on top of a Burstein-Moss shift Ga0.47In0.53As/InP distributed Bragg reflector. The design guidelines and the main features of the semiconductor saturable absorber mirrors are summarized. Synchronization of a harmonically mode-locked pulse train to an external signal and repetition rate stabilization is demonstrated by directly modulating the 980 nm pump diode laser used both to provide gain and to optically modulate a semiconductor saturable absorber mirror.
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