Roughness has always been a key detractor of the optical losses within the silicon photonics devices. With scaling at 300mm wafer, there is an introduction of new tools such immersion lithography scanner, OPC technique that can help to drive furthermore the optical losses reduction. This study will detail the work done on characterizing multiple steps of the process (Lithography, Etch, Annealing) and using roughness tools such LER (Line Edge Roughness), LWR (Line Width Roughness) and finally PSD (Power Spectral Density) to understand the main detractor of the optical losses at each step. These data will be extracted using SEM imaging from VeritySEM 6i.
The growing demand for advanced DRAM technologies requires development of novel process control methodologies reflecting design rule shrinkage. The new challenges for CD SEM metrology of dense feature arrays of DRAM layers are widely considered in the literature and ITRS documents. In addition to traditional SEM metrology methods based on measurement of individual features, the development of novel measurement techniques is required for dense cell arrays at small nodes.[1-3] We considered a novel metrology of CDSEM Critical Dimension (CD) in dense arrays, formed as capacitors in advanced dynamic random-access memory (DRAM) layers. The proposed approach is based on traditional CDSEM metrology methodology with new developments providing flexibility, CD-style high precision, and large statistical sampling capabilities for advanced Statistical Process Control (SPC). The metrology challenge is solved through development of new algorithmic approaches for dense array measurements. The approach was validated on data simulation of extracting geometry (CD) parameters of actual DRAM cell structures and verified on real data.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.