Modeling of laser-induced photoionization is a key component in simulations of ultrafast laser ablation of transparent solids. Available analytical and phenomenological models consider the ionization by promoting valence band electrons to a conduction band via simultaneous absorption of several laser photons of the same energy defined at central wavelength of laser-pulse spectrum. That assumption corresponds to nearly zero spectrum bandwidth and is not true for ultrashort few-cycle pulses. Treatment of the few-cycle-pulse photoionization by numerical methods, e.g., time-dependent density-functional theory, meets substantial difficulties when modeling of ionization-rate scaling with multiple laser-pulse and material parameters. To address those gaps, we report an analytical approach to evaluation of the photoionization rate by a few-cycle laser pulse with nonnegligible spectral bandwidth. We assume that the pulse spectrum supports the few-cycle pulse duration, but is narrow enough to prevent quantum interference between multiphoton transitions of different orders. We outline the calculation procedure, report examples of simulations with the proposed model, and discuss some novel physics of the photoionization. Our model includes dependence of the photoionization rate on carrier-envelope phase and delivers significantly higher rates compared with the Keldysh model. We interpret those results in terms of laser-driven variations of effective band gap, opening of extra channels of the multiphoton absorption, and involvement of a continuous range of electron states determined by pulse spectrum width. Based on the reported model, we discuss new options to control threshold of ultrafast laser ablation via carrier-envelope and pulse-shape scaling of the photoionization rate.
Rate of the photoionization is the key quantity employed in all simulations of nonlinear absorption and generation of free carrier associated with high-intensity interactions of ultrashort laser pulses with transparent solids. The rate is evaluated by either numerical methods or by analytical models. However, they meet significant challenges when applied to the pulses carrying from 3 to 20 cycles because of the single-frequency approximation underlying the analytical models and the difficulties met by the numerical methods in modeling of parametric scaling of the rate. Here, we report an analytical timedomain model of the photoionization that fits that range of the pulse width. Analytical relations for the photoionization rate are derived in the form of asymptotic series. The zero-order term of the series is the Keldysh-type rate evaluated at central frequency of pulse spectrum. Higher-order terms describe departures from the single-frequency approximation of the Keldysh-type models and accurately evaluate the photoionization rate by the pulses carrying 3 or more cycles. Significant influence of carrier-envelope phase in magnitude of the photoionization rate is reported. Substantial departure from the Keldysh-type monochromatic models of the photoionization is demonstrated and discussed. The reported model may serve as a highly effective simulation tool for modeling of nonlinear interactions of high-intensity few-cycle laser pulses with transparent solids.
We consider intra-band electron oscillations driven by intense few-cycle laser pulses carrying as many as 15 cycles and show feasibility of generation of femtosecond photocurrent pulses in semiconductors without external bias. The mechanism of this phenomenon is attributed to generation of non-zero net momentum within each oscillation cycle due to sub-cycle violation of symmetry of momentum departures. Combined with laser-induced increase of free-electron population, it induces photocurrent pulses. Reported analytical quantum-mechanical model delivers scaling of peak photocurrent with material and laser parameters. Based on it, we discuss the type of semiconductor nanostructures most favorable for detection of that phenomenon.
By considering intra-band electron oscillations driven by intense few-cycle laser pulses, we show feasibility of generation of femtosecond photocurrent pulses in non-metal solids without external bias by laser pulses carrying as many as 15 cycles. The physical mechanism of the photocurrent is attributed to non-zero cycle-averaged momentum of the oscillating electrons produced by violation of sub-cycle symmetry of momentum departures. Reported analytical model delivers scaling of peak photocurrent (total charge) with material and laser parameters including carrier-envelope phase. We discuss applications of this novel ultrafast electro-optic effect in temporal shaping of ultrashort pulses and novel regimes of material processing.
Low energy of the photons of intense mid-infrared lasers favors generation of highly non-equilibrium free-carrier (FC) plasmas with high ponedromotive energy of conduction-band electrons. The plasmas are characterized by enlarged electron-phonon collision time, low free-carrier absorption, and extended lifetime of plasma’s non-equilibrium states in contrary to near-infrared and visible wavelengths. We propose a model that incorporates an energy-resolved rate equation for the laser-generated conduction-band electron density, the Keldysh photoionization, the Vinogradov free-carrier absorption, and the low-collision-rate model of transient optical response. We discuss proper criteria to evaluate threshold of laser-induced damage by applying the model to typical semiconductors.
The paper is devoted to modeling of thin metallic film on a glass substrate oxidation under the action of ultrashort
laser pulse sequence with taking into account surface and bulk oxidation and electronic excitation.
Ultrashort laser pulse interaction with material involves a number of specialities as compared to longer
irradiations. We study laser heating of metal by femtosecond pulse with taking into account electron photo- and
thermionic emission leading to accumulation of a high positive charge on the target surface and, thus, to the generation
of the electric field which causes Coulomb explosion (an electronic mechanism of ablation). Also emission slightly
influences the thermal and optical properties of solids.
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