Dr. Paola Prete Profile

Dr. Paola Prete

Senior Scientist at Istituto per la Microelettronica e Microsistemi

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 1 August 2021 Presentation + Paper

Correlating spectroscopic and nanoscale structural properties in quantum well tubes III-V nanowires

Paola Prete, Daniel Wolf, Nico Lovergine

Proceedings Volume 11800, 118000R (2021) https://doi.org/10.1117/12.2593775

KEYWORDS: Nanowires, Gallium arsenide, Data modeling, Scanning transmission electron microscopy, Spectroscopy, Quantum wells, Aluminum, Tomography, Statistical analysis, Luminescence

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Proceedings Article | 26 August 2015 Paper

On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

Paola Prete, Roberta Rosato, Elena Stevanato, Fabio Marzo, Nico Lovergine

Proceedings Volume 9553, 955306 (2015) https://doi.org/10.1117/12.2189086

KEYWORDS: Gallium arsenide, Luminescence, Heterojunctions, Quantum wells, Vapor phase epitaxy, Nanolithography, Semiconducting wafers, Modulation, Nanostructures, Nanowires

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Proceedings Article | 16 September 2014 Paper

GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties

Paola Prete, Ilio Miccoli, Nico Lovergine

Proceedings Volume 9174, 91740P (2014) https://doi.org/10.1117/12.2061816

KEYWORDS: Gallium arsenide, Nanostructures, Excitons, Luminescence, Gold, Nanoparticles, Solids, Rhodium, Photomicroscopy, Nanowires

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Proceedings Article | 21 January 2012 Paper

III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices

Nico Lovergine, Paola Prete

Proceedings Volume 8268, 82680Q (2012) https://doi.org/10.1117/12.908618

KEYWORDS: Gallium arsenide, Photomicroscopy, Raman spectroscopy, Transmission electron microscopy, Doping, Holography, External quantum efficiency, Optoelectronics, Photovoltaics, Nanowires

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Proceedings Article | 21 November 2000 Paper

Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors

Nico Lovergine, A. Mancini, P. Prete, Adriano Cola, Leander Tapfer

Proceedings Volume 4141, (2000) https://doi.org/10.1117/12.407582

KEYWORDS: Crystals, Solids, Vapor phase epitaxy, X-ray detectors, Gallium, Diffusion, Neodymium, Diodes, Sensors, Single crystal X-ray diffraction

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Proceedings Article | 23 October 1997 Paper

Laser reflectance monitoring of the nucleation and growth of CdTe on basal plane sapphire substrates for focal plane arrays

A. Stafford, Stuart Irvine, K. Hess, Jagmohan Bajaj, R. Harper, P. Prete

Proceedings Volume 3122, (1997) https://doi.org/10.1117/12.279002

KEYWORDS: Reflectivity, Sapphire, Staring arrays, Scattering, Laser scattering, Helium neon lasers, Feedback control, Reflectometry, Temperature metrology, Sensors

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The nucleation of CdTe onto basal plane sapphire and the subsequent growth of a CdTe buffer layer has been studied using in-situ laser reflectance (probe wavelength 633 nm, HeNe laser). The production of midwave infrared focal plane arrays requires the growth of typically 10 micrometer of CdTe (111)B buffer layer in order to grow out problems due to stacking faults, dislocation clusters and twinning. A-face and B-face growth of CdTe is seen to produce different reflectance 'signatures' within the first 6000 angstroms of growth, so enabling the early identification of problems with the growth process. Laser reflectance was also successfully demonstrated to predict the thickness of the buffer layer. Oscillations in the laser reflectance are attenuated due to absorption by the film at the probe wavelength used after approximately 6000 angstrom. However by the on-line calculation of the growth rate at every half wavelength oscillation, it is possible to extrapolate a film thickness for the total growth time. This extrapolated value is seen to be in good agreement with the thickness calculated ex-situ by beta-back scattering. The dependence on the buffer layer growth on the nucleation conditions was also investigated. The determination of whether the buffer layer grows A-face or B-face is seen to be more influenced by the II:VI ratio than the temperature during nucleation. For a nucleation temperature of 400 degrees Celsius, with a II:VI ratio of 6:1 the growth of the buffer layer is seen to be 100% A-face. As the II:VI ratio is increased the degree of A-face growth is seen to decline and the material becomes dominated by B-face growth. At a II:VI ratio of 60:1 the material is entirely B-face and predominantly untwinned. The difference in the two growth modes is manifested in the laser reflectance. Greater scattering of the laser light occurs during B-face growth due to the increased roughening compared to A-face growth. Consequently the reflectance signal in the B-face signature is seen to fall away more rapidly than is the case with A-face growth.

Showing 5 of 6 publications

Conference Committee Involvement (10)

Low-Dimensional Materials and Devices 2024

19 August 2024 | San Diego, California, United States

Low-Dimensional Materials and Devices 2023

21 August 2023 | San Diego, California, United States

Low-Dimensional Materials and Devices 2022

23 August 2022 | San Diego, California, United States

Low-Dimensional Materials and Devices 2021

2 August 2021 | San Diego, California, United States

Low-Dimensional Materials and Devices 2020

24 August 2020 | Online Only, California, United States

Showing 5 of 10 Conference Committees

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