Backside illuminated (BSI) hybrid CMOS image sensors possessing excellent spectral response
(> 80% between 400nm-800nm) have been previously reported by us. Particularly challenging with BSI imagers is to
combine such sensitivity, with low electrical inter-pixel crosstalk (or charge-dispersion). Employing thick bulk silicon
(in BSI) to maximize red response results in large crosstalk especially for blue light. In the second generation of these
imagers, we undertook the exercise of solving the crosstalk problem by a two-pronged approach: a) an optimized
epitaxial substrate that was engineered to maximize the internal electric field b) high aspect ratio trenches (30 μm deep)
with carefully tailored sidewall passivation. The results show that the proposed optimizations are effective in curtailing
crosstalk without having a major impact on other sensor parameters.
Two types of backside illuminated CMOS Active Pixel Detectors--optimized for space-borne imaging--have been
successfully developed: monolithic and hybrid. The monolithic device is made out of CMOS imager wafers postprocessed
to enable backside illumination. The hybrid device consists of a backside thinned and illuminated diode array,
hybridized on top of an unthinned CMOS read-out. Using IMEC's innovative techniques and capabilities, 2-D arrays
with a pitch of 22.5 μm have been realized. Both the hybrid and well as the monolithic APS exhibit high pixel yield, high
quantum efficiency (QE), and low dark current. Cross-talk can be reduced to zero in the hybrid sensors utilizing special
structures: deep-isolating trenches. These trenches physically separate the pixels and curtail cross-talk. The hybrid
imagers are suitable candidates for advanced "smart" sensors envisioned to be realized as multi-layer 3D integrated
systems. The design of both these types of detectors, the key technology steps, the results of the radiometric
characterization as well as the intended future developments will be discussed in this paper.
It is generally known that active pixel sensors (APS) have a number of advantages over CCD detectors if it comes to cost
for mass production, power consumption and ease of integration. Nevertheless, most space applications still use CCD
detectors because they tend to give better performance and have a successful heritage. To this respect a change may be at
hand with the advent of deep sub-micron processed APS imagers (< 0.25-micron feature size). Measurements performed
on test structures at the University of Delft have shown that the imagers are very radiation tolerant even if made in a
standard process without the use of special design rules. Furthermore it was shown that the 1/f noise associated with deep
sub-micron imagers is reduced as compared to previous generations APS imagers due to the improved quality of the gate
oxides. Considering that end of life performance will have to be guaranteed, limited budget for adding shielding metal
will be available for most applications and lower power operations is always seen as a positive characteristic in space
applications, deep sub-micron APS imagers seem to have a number of advantages over CCD's that will probably cause
them to replace CCD's in those applications where radiation tolerance and low power operation are important
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