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Pascal Farin
at Technische Univ Berlin
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Publications (1)
Proceedings Article | 4 March 2019 Presentation
Investigation of Bi-induced three-dimensional InAs nanostructures on GaAs (110) by cross-sectional scanning tunnelling microscopy (Conference Presentation)
Wjatscheslav Martyanov, Ryan Lewis, Hendrik Janssen, Celina S. Schulze, Pascal Farin, Robert Zielinski, Andrea Lenz, Mario Dähne, Lutz Geelhaar, Holger Eisele
Proceedings Volume 10929, 1092908 (2019) https://doi.org/10.1117/12.2507885
KEYWORDS: Bismuth, Scanning tunneling microscopy, Indium arsenide, Nanostructures, Gallium arsenide, Microscopy, 3D scanning, Chemical analysis, Quantum dots, Nanowires
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