Mr. Patrick Reynolds Profile

Patrick Reynolds

President at Benchmark Technologies

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Publications (11)

Proceedings Article | 9 April 2024 Presentation + Paper

Challenges of photomask-based greyscale lithography with a highly-sensitive positive photoresist designed for>100µm deep greyscale patterns

Christine Schuster, Marina Heinrich, Anja Voigt, Andrew Zanzal, Patrick Reynolds, Stephen DeMoor, Gerda Ekindorf, Arne Schleunitz, Gabi Grützner

Proceedings Volume 12956, 129560H (2024) https://doi.org/10.1117/12.3010852

KEYWORDS: Film thickness, Photoresist materials, Lithography, Ultraviolet radiation, Binary data, Grayscale lithography, Standards development, Optical lithography, Glasses, Photomasks

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Proceedings Article | 9 April 2024 Poster + Paper

2.5D-patterning via i-line grayscale exposure for photonic structures and micro lens arrays

Sebastian Schermer, Christian Helke, Balaji Sake, Andrew Zanzal, Patrick Reynolds, Stephen DeMoor, Anja Voigt, Danny Reuter

Proceedings Volume 12956, 129560J (2024) https://doi.org/10.1117/12.3008954

KEYWORDS: Reticles, Etching, Dry etching, Manufacturing, Lens arrays, Grayscale lithography, Photoresist processing, Design, Scanning electron microscopy, Electron beam lithography

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Proceedings Article | 20 October 2006 Paper

Adding grayscale layer to chrome photomasks

David Poon, James Dykes, Chinheng Choo, Jimmy T. Tsui, Jun Wang, Glenn Chapman, Yuqiang Tu, Patrick Reynolds, Andrew Zanzal

Proceedings Volume 6349, 634931 (2006) https://doi.org/10.1117/12.686599

KEYWORDS: Photomasks, Argon ion lasers, Binary data, Photoresist materials, Reticles, Optical lithography, Thin films, Calibration, Glasses, Oxidation

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Proceedings Article | 15 March 2006 Paper

Experimental verification of PSM polarimetry: monitoring polarization at 193-nm high-NA with phase-shift masks

Gregory McIntyre, Andrew Neureuther, Steve Slonaker, Venu Vellanki, Patrick Reynolds

Proceedings Volume 6154, 61540D (2006) https://doi.org/10.1117/12.656589

KEYWORDS: Polarization, Reticles, Calibration, Polarimetry, Signal detection, Photomasks, Photoresist materials, Fiber optic illuminators, Lithographic illumination, Mask making

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Proceedings Article | 15 March 2006 Paper

Practical approach to full-field wavefront aberration measurement using phase wheel targets

Lena Zavyalova, Bruce Smith, Anatoly Bourov, Gary Zhang, Venugopal Vellanki, Patrick Reynolds, Donis Flagello

Proceedings Volume 6154, 61540Y (2006) https://doi.org/10.1117/12.657928

KEYWORDS: Data modeling, Scanning electron microscopy, Phase measurement, Calibration, Lithography, Semiconducting wafers, Photoresist materials, Photomasks, Optimization (mathematics), Error analysis

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Proceedings Article | 15 March 2006 Paper

Across wafer focus mapping and its applications in advanced technology nodes

Gary Zhang, Stephen DeMoor, Scott Jessen, Qizhi He, Winston Yan, Sopa Chevacharoenkul, Venugopal Vellanki, Patrick Reynolds, Joe Ganeshan, Jan Hauschild, Marco Pieters

Proceedings Volume 6154, 61540N (2006) https://doi.org/10.1117/12.657752

KEYWORDS: Semiconducting wafers, Sensors, Chemical mechanical planarization, Scanners, Back end of line, Monochromatic aberrations, Calibration, Process control, Front end of line, Etching

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The understanding of focus variation across a wafer is crucial to CD control (both ACLV and AWLV) and pattern fidelity on the wafer and chip levels. This is particularly true for the 65nm node and beyond, where focus margin is shrinking with the design rules, and is turning out to be one of the key process variables that directly impact the device yield. A technique based on the Phase-Shift Focus Monitor (PSFM) is developed to measure realistic across-wafer focus errors on materials processed in actual production flows. With this technique, we are able to extract detailed across-wafer focus performance at critical pattern levels from the front end of line (FEOL) all the way through the back end of line (BEOL). Typically, more than 8,000 data points are measured across a wafer, and the data are decomposed into an intra-field focus map, which captures the across chip focus variation (ACFV), and an inter-field focus map, which describes the across wafer focus variation (AWFV). ACFV and AWFV are then analyzed to understand various components in the overall focus error, including; across slit lens image field, reticle shape and dynamic scan components, local wafer flatness, wafer processing effect, pattern density, and edge die abnormality. The intra-field ACFV lens component is compared with TI's ScatterLith and ASML's FOCAL techniques. Results are consistent with the predictions based on the on-board lens aberration data. Inter-field AWFV is the most interesting, due to lack of detailed understanding of the process impact on scanner focus and leveling. PSFM data is used to characterize the effect of wafer processing such as etch, deposition, and CMP on across wafer focus control. Comparison and correlation of PSFM focus mapping with the wafer height and residual moving average (MA) maps generated by the scanner's optical leveling sensors shows a good match in general. Process induced focus errors are clearly observed on wafers of significant film stack variation and/or pattern density variation. Implications on total focus control and depth of focus (DOF) requirements for 65nm mass production are discussed in this paper using a quantitative pattern yield model. The same technique can be extended to immersion lithography.

Proceedings Article | 28 May 2004 Paper

Device manufacturing critical evaluation of focus analysis methods

William Roberts, Matt Mcuillan, Macro Louka, Terrence Zavecz, Patrick Reynolds, Mircea Dusa

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535292

KEYWORDS: Semiconducting wafers, Reticles, Metrology, Data modeling, Scanners, Monochromatic aberrations, Calibration, Photoresist materials, Image analysis, Matrices

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Device Design criteria and product complexity have reduced the Focus Budget on today's technologies to near zero. Recent years have seen the introduction of a number of focus monitor methods involving new designs and processes that attempt more accurately or more easily to define the focus performance of our imaging systems. We have evaluated several focus monitoring techniques and compared their relative strengths and speed. The objective of this study is to demonstrate each technology's ability to evaluate exposure tool lens performance and quantify those factors that directly degrade depth-of-focus in the process. Baseline focus for process exposure and lens aerial image aberration analysis is evaluated using focus matrices. The remaining contributors to depth-of-focus (DOF) degradation are derived from the opto-mechanical interactions of the tool during full-wafer exposures. Full-wafer exposures, biased to -100 nm focus, were used in the determination of these error sources. Exposing all test sequences on the same 193 nm scanner provided consistency of the comparison. A valid analytical comparison of the technologies was further guaranteed by using a single software tool, Weir PSFM software from Benchmark Technologies, to calibrate, analyze and model all metrology. Two of the four techniques we evaluated were found to require focus matrices for analysis. This prohibited them from being able to analyze the fixed-focus exposure detractors to the DOF. One technique was found to be ineffective at the 193 nm because of the high-contrast response of the photoresists used. An analysis of the aerial image was validated by comparison of each technique to the Z5 Zernike as measured by ASML's ARTEMIS analysis. The ASML FOCAL and Benchmark PGM targets, both replicating dense- packed feature response, best tracked ARTEMIS signature. A whole-wafer, fixed exposure tool focus analysis is used to evaluate wafer, photoresist and dynamic scan contributions to the focus budget. Of the four techniques considered only the PSFM and PGM patterns could be used for this evaluation. Performance response is reported for detractors involving the wafer as well as the mechanical scan direction of the reticle stage.

Proceedings Article | 23 April 1999 Paper

Development of a new defect sensitivity monitor for advanced OPC reticle technology

Wolfgang Staud, Yair Eran, Patrick Reynolds, Craig Sager

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346227

KEYWORDS: Optical proximity correction, Reticles, Inspection, Photomasks, Manufacturing, Semiconducting wafers, Resolution enhancement technologies, Sensors, Algorithm development, Critical dimension metrology

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Proceedings Article | 26 May 1995 Paper

Detailed study of a phase shift focus monitor

Graham Pugh, Brian DeWitt, Craig Sager, Patrick Reynolds

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209296

KEYWORDS: Semiconducting wafers, Calibration, Image registration, Reticles, Phase shifts, Error analysis, Etching, Structural design, Critical dimension metrology, Manufacturing

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Proceedings Article | 17 May 1994 Paper

Lithographic performance at sub-300-nm design rules using a high-NA I-line stepper with optimized NA and (sigma) in conjunction with advanced PSM technology

Barton Katz, Richard Rogoff, James Foster, William Rericha, J. Brett Rolfson, Richard Holscher, Craig Sager, Patrick Reynolds

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175437

KEYWORDS: Lithography, Computer aided design, Manufacturing, Photomasks, Reticles, Phase shifts, Lithium, Design for manufacturability, Binary data, Photoresist materials

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Proceedings Article | 1 June 1992 Paper

Exploring the limits of phase-shift lithography: Part I--the alternating shifter

Shane Palmer, Cesar Garza, Craig Sager, Patrick Reynolds

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130311

KEYWORDS: Photomasks, Information operations, Lithography, Photoresist materials, Optical lithography, Phase shifts, Photoresist processing, Scanning electron microscopy, Photomicroscopy, Reticles

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Showing 5 of 11 publications

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