Laser-induced damage threshold (LIDT) is investigated at several wavelengths in the high-purity silica optical fiber. The finite element method (FEM) is used to study transmission mode, LIDT, temperature distribution, and thermal stress distribution of the fiber. Our results show that the center of the front surface is subjected to severe thermal effects under laser irradiation and consequently, and it is susceptible damage. The variations in temperature and thermal stress are identified as increasing with laser fluences, which show a similar tendency. When laser fluences surpass the LIDT, such as 35 GW / cm2, the temperature at the front surface center shows a sudden growth and the melting damage appears, and no stress damage occurs at this time. Notably, the melting effect of high purity fused silica optical fiber is simulated by numerical calculation based on ray optics for the first time. Our research can provide systematic FEM simulations for the LIDT of silica optical fibers.
We constructed a panda polarization-maintaining fiber model and used finite element method to study its laser damage characteristics. We find that the anti-damage performance of the optical fiber is similar to that of a straight optical fiber under a large bending radius. But when bending radius less than 20 mm, the optical fiber is easy to be damaged, so it is not suitable for working with bend radius less than 20 mm. When studying the relation between the damage and mode number, we find that the higher-order mode is easily disordered and the fundamental mode is more stable. In addition, although the fiber is asymmetric, the damage performance of the optical fiber does not change with the bending directions.
Laser-induced damage threshold (LIDT) is the key parameter in the transmission of high power laser. Research on LIDT can help us to determine the scope of use of optical devices and thereby optimize the performance. We use the finite element method (FEM) to study the LIDT of high-purity silica fiber with 1064 nm laser. We find that the results of temperature distribution calculated by ray optics and wave optics show similar tendency. With the increase of laser fluences through the incident surface, the thermal effects become higher and laser damage gradually appears at the surface. We calculate the temperature and thermal stress displacements distribution when the laser fluences surpass LIDT. Our research can provide systematic FEM simulations for the LIDT of fibers.
The sensitive parameters affecting the dark current characteristics are further studied by using InAs/GaSb type II superlattice (T2SL) pBpp structure long wavelength Infrared photodetectors.Generation of recombination (G-R), surface leakage current and tunneling current are the main components of dark current. Using pBpp structure can suppress them effectively, thereby decreasing dark current. Based on the k ∙ p method, the band structure of InAs/GaSb T2SL and InAs/AlSb T2SL can be obtained by solving the 8-band k ∙ p model. We have calculated different doping levels of pBpp detector and different layer thicknesses of pBpp detector. For pBpp device, we consider the dark current for different contact layer doping and different absorber layer doping. We also study the influence of different contact layer thicknesses and different absorber layer thicknesses on dark current. The dark current of pBpp detector is dominant by tunneling current at low temperature, and diffusion is the main limiting mechanism in dark current at high temperature, for barrier layer inhibits generation-recombination contribution. Eventually, the dark current of a pBpp structure has been calculated for versus voltage at 77 K.
Based on a master oscillator power amplifier configuration, laser performance of commercial Nufern-20/400-8M Ybdoped aluminophosphosilicate ternary laser fiber was investigated. Pumped by 976 nm laser diodes, 982 W laser output power was obtained with a slope efficiency of 84.9%. Spectrum of output was centered at 1066.56nm with 3dB bandwidth less than 0.32 nm, and the nonlinearity suppression ratio was more than 39dB. Beam quality of Mx2 and M2y were 1.55 and 1.75 at 982 W, respectively. The laser performance indicated that Nufern-20/400-8M Yb-doped aluminophosphosilicate ternary laser fiber is highly competitive for industry fiber laser use.
A first principles study has been performed to systematically evaluate the mechanical properties and stabilities of pristine, hydrogenated and fluorinated silicene (H-silicane and F-silicane) under tension. The uniaxial tension along the armchair (AC) and zigzag (ZZ) directions and the equiaxial tensile strain are considered in this work. The calculated results have shown that the deformation, failure behavior and the ideal strength are anisotropic along the three deformed directions. After hydrogenation and fluorination, the ideal strengths in three deformed directions all reduce while the ideal strains increase. Therefore, the hydrogenation and fluorination increase the toughness. The phonon calculations based on the density functional perturbation theory (DFPT) confirm stabilities of the pristine silicene, H- and F-silicane. The Poisson ratios of three materials along the AC and ZZ directions all exhibit monotone decreasing changes with increasing strain, except that the Poisson ratio of pristine silicene in the zigzag direction increases with increasing strain. The tensile strains decrease the buckling height, as expected, but in a complex function. The second- and third-order elastic constants are determined by least-squares polynomial fitting to the first principles calculations. Our results can help to understand the effect of hydrogenation and fluorination of silicene on its mechanical properties and provide some useful data for the experiments.
A general model in satellite-to-ground quantum communication is proposed by investigating the effect of a laser acquisition, pointing, and tracking (APT) system on the polarization state of single photons. The eccentricity of the general model ranges from 0 to 1, which means that a circular orbit can be introduced reasonably. Moreover, the geocentric-equatorial coordinate system, which can utilize the two-line elements, is used in the general model. Two kinds of simulations are performed, and we found that the rotations of polarization state are obviously influenced by the APT system. Our model could be applied in a realistic satellite-to-ground quantum communication system.
Off-plane band structure for triangular and square lattice with non-zero kz component were calculated using Plane Wave
Expansion Method. Both decreasing, finally breaking down of in-plane band gaps and emerging of new off-plane band
gaps were observed with an increasing kz. Kz component dependence of band gap was investigated in both triangular
and square lattice, with varied air hole radius and dielectric constant.
KEYWORDS: Manganese, Fermium, Frequency modulation, Zinc oxide, Magnetism, Atomic force microscopy, Chemical species, Doping, Magnetic semiconductors, Technetium
A first-principles study has been performed to evaluate the electronic and magnetic properties of the Zn1-xMnxO1-yNy
system. Doping Mn atoms introduces local magnetic moments, while doping N atoms introduces carriers. It is worth
noting that intrinsic Mn-doped ZnO favors antiferromagnetic (AFM) ordering, and this cannot be changed by raising Mn
ions concentration continuously. However, by the codoping N and Mn, it is possible to change the ground state from
no-metallic AFM to half-metallic ferromagnetic (FM) and make ZnO as a dilute magnetic semiconductor. We have
succeeded in describing the change (from AFM to FM) by using the magnetic interaction that is hole-mediated FM due to
the hybridization between N 2p and Mn 3d states. Furthermore, the most stable configurations are found to be
-O-Mn-N-Mn-O-.Our results are in good agreement with other theoretical results that are additional holes carriers is one
of the possible mechanisms.
Molecular dynamics simulations using the Tersoff potential have been performed to investigate the perturbation effects
caused by different kinds of the point defects (vacancies and substitutional impurities) on the strained and relaxed Si
matrices. Lattice distortion, mean square displacement, pair correlation function and vibrational spectra are studied. It is
found that Ge substitution lead to little distortion of the Si matrix. However, vacancy and C substitution lead to more
distortion. Diffusion directions of Si atoms around different kinds of point defects are different. When C substitution is
introduced in the relaxed Si matrices or Ge substitution is introduced in the strained Si matrices, the system needs longer
time to reach equilibrium. The crystallinity and symmetry degree of relaxed Si matrices are more satisfying than those of
strained Si matrices after relaxation. Changes of the vibrational spectra caused by vacancy and C substitution are obvious.
All above have a great effect on the photoelectric properties of the materials.
The work in this paper is based on a powerful function-fmincon in matlab and Finite Element Method, optimizing the
shape and the position of dielectric rods surrounding the termination of a photonic crystal waveguide, in order to increase
the directional emission. The method is simple, but can lead to useful results efficiently. More than fivefold improvement
in power incident upon a target area over a simple termination is achieved, and the optimized structure is easier for
fabrication.
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