Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC
magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in
the visible range after the application of various post heating treatments. The electrical and optical properties of FTO
films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the
lowest resistivity of 1.38×10-3 Ω-cm, carrier density of 2.27×1020 cm-3 and mobility of 20 cm2/ V-s. When the annealing
temperature is 400°Cin a H2 5%+N2 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of
1.26×10-3 Ω-cm, carrier density of 2.17×1020 cm-3 and mobility of 22.8 cm2/ V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10-3 Ω-cm, carrier density of
4.40×1020 cm-3 and mobility of 11.6 cm2/ V-s.
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