VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.
VESTIC technology was proposed as an alternative for traditional CMOS technology. It offers a new FET-type twin
gate junctionless device called VeSFET. In addition, in the basic VESTIC device structure many different active devices
can be made, including bipolar transistors. This allows easy integration of bipolar transistors (called here VeSBJT) with
VeSFET transistors. The purpose of this paper is to investigate the expected properties of VeSBJT in order to answer the
following questions: are the expected parameters of VeSBJT promising enough to justify further research and fabrication
experiments, and will VeSBJTs be technologically compatible with VeSFETs? Our theoretical predictions are based on
the concept of effective base width for bipolar transistors with non-plane-parallel emitter and collector junctions. The
conclusion is that VeSBJT can be a device with useful characteristics. As a result, VESTIC may have the potential to
become a new BiCMOS-type technology.
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