This work presents and discusses the results of developing the first integrated photonic platform for the mid-IR spectral range, MIRPIC (Mid-IR Photonic Integrated Circuits). The platform is based on the heterogeneous integration of mid-IR light sources (QCLs), Ge-on-Si waveguiding components, and mid-IR photon detectors. We will present the platform's general concept along with the library of individual components developed and tested so far, discussing them in the context of operational parameters. Recent results will be showcased, documenting progress in MIRPIC platform development while pointing out the main challenges faced by the technology.
This work has received support from the National Centre for Research and Development through project MIRPIC (TECHMATSTRATEG-III/0026/2019-00).
In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.
The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.