Dr. Priyalal S. Wijewarnasuriya Profile

Dr. Priyalal S. Wijewarnasuriya

Research Physicist at Raytheon Vision Systems

SPIE Involvement:

Conference Program Committee | Conference Chair | Editor | Author

Publications (88)

Proceedings Article | 30 September 2022 Presentation + Paper

Presentation + Paper

Performance of very long wavelength planar P+/n devices

Priyalal Wijewarnasuriya, Bo Shojaei, Kenneth Cante, Eric Holland, Bill Christian, Howard Barr, Hung Tcheou, Dora Servin, Ray Boe, Connie Elizarraraz, Brian Starr, Justin Eakins, Michael Carmody

Proceedings Volume 12234, 1223401 (2022) https://doi.org/10.1117/12.2634277

KEYWORDS: Quantum efficiency, Diffusion, Mercury cadmium telluride, Sensors, Staring arrays, Absorption, Photons, Infrared sensors, Infrared detectors, Readout integrated circuits

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Proceedings Article | 13 May 2019 Paper

Paper

Broadband antireflection coatings for advanced sensing and imaging applications

Gopal Pethuraja, Adam Sood, John Zeller, Roger Welser, Ashok Sood, Harry Efstathiadis, Priyalal Wijewarnasuriya

Proceedings Volume 10980, 109800U (2019) https://doi.org/10.1117/12.2521463

KEYWORDS: Antireflective coatings, Nanostructuring, Transmittance, Glasses, Reflectivity, Refractive index, Coating, Sensors, Reflection, Multilayers

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Proceedings Article | 7 May 2019 Paper

Paper

Ultra-thin super absorbing photon trapping materials for high-performance infrared detection

Hossein Rabiee-Golgir, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Ahmed Mayet, Cesar Bartolo-Perez, Priyalal Wijewarnasuriya, Nibir Dhar, M. Saif Islam

Proceedings Volume 11002, 110020T (2019) https://doi.org/10.1117/12.2518690

KEYWORDS: Infrared detection

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The performance of mid- and long-wavelength infrared (IR) detectors is still restricted with the dark current characteristics and associated noise behavior. In this work, we propose reducing the dark current and related noise of the IR detectors to elevate high operating temperature and improve the detector quantum efficiency (QE), by using a thin absorption layer of IR absorbing materials like lead selenide (PbSe) and mercury cadmium telluride (HgCdTe). A photon bending and trapping mechanism based on integrated micro/nanoscale holes was employed to ensure high quantum efficiency despite using a thin absorbing layer. Using finite-difference time-domain (FDTD) method, the effect of embedded hole arrays on the optical absorption enhancement of ultra-thin PbSe and HgCdTe has been investigated. The calculated optical absorptions in ultra-thin IR structures without holes were compared with that of similar structures embedded with hole arrays. The optical absorption in 2 μm thick PbSe film without holes is less than 5% for 3-5 μm mid-IR wavelengths. Although applying conventional anti-reflecting (AR) coatings leads to a slightly higher absorption, it can cause higher dark current due to increased surface traps. Integration of hole arrays in 2 μm thick PbSe film has shown a significant optical absorption enhancement, up to 20% at 4.5 μm wavelength. This is equivalent to more than 2- and 4-folds' enhancement compared to a 2 μm thick flat-surface structure with AR and without AR, respectively. In addition, embedding the hole arrays in 1.2 μm thick HgCdTe IR films enhances the optical absorption up to 75% at 4.5 μm, which is more than 4 times higher than that in HgCdTe structure without holes. Additionally, the optical absorption in 1.2 μm thick HgCdTe film with periodic array of photon-trapping micro-holes enhances to 27% at 10 μm, long-IR wavelength. This is more that 3 times higher than that in HgCdTe films without holes. Our work revealed that the embedding hole arrays not only enhances the optical absorption in IR ultra-thin structures but also can reduce that material filling ratio to ~50%, which leads to a lower dark current, ensuring higher temperature operation of the IR detectors.

Proceedings Article | 18 September 2018 Presentation + Paper

Presentation + Paper

Nanostructured antireflection coatings for infrared sensors and applications

Gopal Pethuraja, John Zeller, Roger Welser, Ashok Sood, Harry Efstathiadis, Priyalal Wijewarnasuriya

Proceedings Volume 10766, 107660I (2018) https://doi.org/10.1117/12.2323702

KEYWORDS: Antireflective coatings, Nanostructuring, Transmittance, Glasses, Reflectivity, Silicon, Multilayers, Long wavelength infrared, Refractive index, Infrared sensors

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Proceedings Article | 19 September 2017 Presentation + Paper

Presentation + Paper

Development of nanostructured antireflection coatings for infrared technologies and applications

Gopal Pethuraja, John Zeller, Roger Welser, Harry Efstathiadis, Pradeep Haldar, Priyalal Wijewarnasuriya, Nibir Dhar, Ashok Sood

Proceedings Volume 10404, 104040S (2017) https://doi.org/10.1117/12.2277957

KEYWORDS: Antireflective coatings, Nanostructuring, Transmittance, Reflectivity, Glasses, Silicon, Multilayers, Infrared technology, Reflection, Refractive index

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Proceedings Article | 19 September 2017 Presentation + Paper

Presentation + Paper

PbS and HgTe quantum dots for SW IR devices

W. Palosz, S. Trivedi, G. Meissner, K. Olver, E. DeCuir, P. Wijewarnasuriya, J. Jensen

Proceedings Volume 10404, 104040M (2017) https://doi.org/10.1117/12.2275677

KEYWORDS: Lead, Absorption, Quantum dots, External quantum efficiency, Electrodes, Sensors, Transmission electron microscopy, Diffusion, Measurement devices, Photodetectors

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Proceedings Article | 7 September 2017 Presentation + Paper

Presentation + Paper

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

John Zeller, Caitlin Rouse, Harry Efstathiadis, Nibir Dhar, Priyalal Wijewarnasuriya, Ashok Sood

Proceedings Volume 10404, 104040H (2017) https://doi.org/10.1117/12.2277958

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Proceedings Article | 30 August 2017 Presentation + Paper

Presentation + Paper

Extraction of minority carrier diffusion length of MWIR Type-II superlattice nBp detector

Zahra Taghipour, Alireza Kazemi, Stephen Myers, Priyalal Wijewarnasuriya, Sen Mathews, Elizabeth Steenbergen, Christian Morath, Vincent Cowan, Gamini Ariyawansa, John Scheihing, Sanjay Krishna

Proceedings Volume 10404, 1040406 (2017) https://doi.org/10.1117/12.2274591

KEYWORDS: Quantum efficiency, Diffusion, Absorption, Temperature metrology, Sensors, Mid-IR, Superlattices, Gallium antimonide, Photodiodes, Diodes

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Proceedings Article | 18 May 2017 Paper

Paper

Development of nanostructured antireflection coatings for infrared image sensing technologies

Gopal Pethuraja, John Zeller, Roger Welser, Ashok Sood, Harry Efstathiadis, Pradeep Haldar, Eric DeCuir, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 10209, 102090D (2017) https://doi.org/10.1117/12.2268856

KEYWORDS: Antireflective coatings, Nanostructuring, Transmittance, Glasses, Silicon, Reflectivity, Infrared imaging, Refractive index, Reflection, Infrared radiation

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Proceedings Article | 19 September 2016 Presentation + Paper

Presentation + Paper

SWIR HgCdTe photodiodes for LADAR applications

Paul Boieriu, J. H. Park, S.-R. Hahn, Priyalal Wijewarnasuriya, Barry Stan, S. Sivananthan

Proceedings Volume 9974, 99740D (2016) https://doi.org/10.1117/12.2239949

KEYWORDS: LIDAR, Short wave infrared radiation, Mercury cadmium telluride, Photodiodes, Sensors, Capacitance, Receivers, Signal to noise ratio, Optical amplifiers, Mirrors

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Proceedings Article | 19 September 2016 Paper

Paper

Probing organic residues on Martian regolith simulants using a long-wave infrared Laser-induced breakdown spectroscopy linear array detection system

Narasimha Prasad, Clayton S.-C. Yang, Feng Jin, Ken Jia, EiEi Brown, Uwe Hömmerich, Yingqing Jia, Sudhir Trivedi, Priyalal Wijewarnasuriya, Eric Decuir, Alan Samuels

Proceedings Volume 9981, 99810I (2016) https://doi.org/10.1117/12.2242901

KEYWORDS: Laser induced breakdown spectroscopy, Long wavelength infrared, Detector arrays, Visible radiation, Infrared spectroscopy, Infrared radiation, Molecular lasers, Infrared detectors, Pulsed laser operation, Molecules

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Proceedings Article | 17 June 2016 Paper

Paper

Analysis of the auger recombination rate in P+N−n−N−N HgCdTe detectors for hOT applications

J. Schuster, W. Tennant, E. Bellotti, P. Wijewarnasuriya

Proceedings Volume 9819, 98191F (2016) https://doi.org/10.1117/12.2224383

KEYWORDS: Mercury cadmium telluride, Sensors, Heterojunctions, Long wavelength infrared, Doping, Electrons, Cadmium, Instrument modeling, Infrared detectors, Diffusion

Read Abstract +

Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (T_op) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in T_op are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P⁺n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P⁺N−n−N−N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P⁺N−n−N−N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombination rate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P⁺N−n−N−N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be utilized to predict and understand the device operation, as analytical models do not exist for heterojunction devices.

Proceedings Article | 26 May 2016 Paper

Paper

Development of nanostructured antireflection coatings for EO/IR sensor applications

Gopal Pethuraja, Roger Welser, Ashok Sood, Harry Efstathiadis, Pradeep Haldar, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 9854, 985407 (2016) https://doi.org/10.1117/12.2229647

KEYWORDS: Nanorods, Antireflective coatings, Nanostructuring, Silica, Glasses, Silicon, Transmittance, Reflectivity, Refractive index, Sensors

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Proceedings Article | 26 May 2016 Paper

Paper

Development of silicon-germanium visible-near infrared arrays

John Zeller, Caitlin Rouse, Harry Efstathiadis, Pradeep Haldar, Jay Lewis, Nibir Dhar, Priyalal Wijewarnasuriya, Yash Puri, Ashok Sood

Proceedings Volume 9854, 985408 (2016) https://doi.org/10.1117/12.2229650

KEYWORDS: Germanium, Silicon, Sensors, Photodetectors, Near infrared, Copper, Transmission electron microscopy, Doping, Indium gallium arsenide, Semiconducting wafers

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Proceedings Article | 26 May 2016 Paper

Paper

Development of graphene based detectors for EO/ IR applications

Ashok Sood, Isaac Lund, John Zeller, Yash Puri, Harry Efstathiadis, Pradeep Haldar, Nibir Dhar, Jay Lewis, Priyalal Wijewarnasuriya

Proceedings Volume 9854, 98540D (2016) https://doi.org/10.1117/12.2229649

KEYWORDS: Graphene, Doping, Infrared sensors, Field effect transistors, Infrared detectors, Sensors, Metals, Silicon, Oxides, Dielectrics

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Proceedings Article | 26 May 2016 Paper

Paper

Overview of detector technologies for EO/IR sensing applications

Ashok Sood, John Zeller, Roger Welser, Yash Puri, Jay Lewis, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 9854, 98540A (2016) https://doi.org/10.1117/12.2229420

KEYWORDS: Zinc oxide, Sensors, Graphene, Ultraviolet radiation, Silica, Infrared sensors, Gallium nitride, Resistance, Nanostructures, Infrared radiation

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Proceedings Article | 26 May 2016 Paper

Paper

Dislocation reduction in HgCdTe grown on CdTe/Si

Priyalal Wijewarnasuriya

Proceedings Volume 9854, 98540B (2016) https://doi.org/10.1117/12.2229309

KEYWORDS: Silicon, Mercury cadmium telluride, Sensors, Composites, Annealing, Etching, Crystals, X-rays, Molecular beam epitaxy, Semiconducting wafers

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Proceedings Article | 17 May 2016 Paper

Paper

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

Priyalal Wijewarnasuriya

Proceedings Volume 9865, 986503 (2016) https://doi.org/10.1117/12.2229487

KEYWORDS: Solar cells, Absorption, Doping, Diffusion, Electrons, Quantum efficiency, Gallium arsenide, Sodium, Photons, Crystals

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Proceedings Article | 17 May 2016 Paper

Paper

High efficiency nanostructured thin film solar cells for energy harvesting

Roger Welser, Ashok Sood, Jay Lewis, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 9865, 986505 (2016) https://doi.org/10.1117/12.2229652

KEYWORDS: Solar cells, Quantum wells, Photovoltaics, Gallium arsenide, Energy efficiency, Energy harvesting, Nanostructuring, Absorption, Diodes, Thin films

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Proceedings Article | 28 August 2015 Paper

Paper

Design and development of wafer-level near-infrared micro-camera

John Zeller, Caitlin Rouse, Harry Efstathiadis, Pradeep Haldar, Nibir Dhar, Jay Lewis, Priyalal Wijewarnasuriya, Yash Puri, Ashok Sood

Proceedings Volume 9609, 96090O (2015) https://doi.org/10.1117/12.2193179

KEYWORDS: Germanium, Sensors, Silicon, Photodetectors, Oxides, Near infrared, Transmission electron microscopy, Semiconducting wafers, Copper, Absorption

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Proceedings Article | 28 August 2015 Paper

Paper

Development of large area nanostructured antireflection coatings for EO/IR sensor applications

Ashok Sood, Gopal Pethuraja, Roger Welser, Yash Puri, Nibir Dhar, Priyalal Wijewarnasuriya, Jay Lewis, Harry Efsthadiatis, Pradeep Haldar, E. Schubert

Proceedings Volume 9609, 96090D (2015) https://doi.org/10.1117/12.2214877

KEYWORDS: Glasses, Antireflective coatings, Nanostructuring, Transmittance, Sensors, Silica, Refractive index, Semiconducting wafers, Reflection, Visible radiation

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Proceedings Article | 28 August 2015 Paper

Paper

Heterojunction depth in P+-on-n eSWIR HgCdTe infrared detectors: generation-recombination suppression

J. Schuster, R. DeWames, E. DeCuir, E. Bellotti, N. Dhar, P. Wijewarnasuriya

Proceedings Volume 9609, 960904 (2015) https://doi.org/10.1117/12.2186043

KEYWORDS: Cadmium, Heterojunctions, Diffusion, Quantum efficiency, Mercury cadmium telluride, Arsenic, Sensors, Doping, Neodymium, Instrument modeling

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Proceedings Article | 7 October 2014 Paper

Paper

MWIR InAsSb FPA data and analysis

E. Robinson, A. D'Souza, A. Ionescu, D. Okerlund, T. de Lyon, R. Rajavel, H. Sharifi, N. Dhar, P. Wijewarnasuriya, C. Grein

Proceedings Volume 9220, 92200D (2014) https://doi.org/10.1117/12.2064665

KEYWORDS: Quantum efficiency, Sensors, Readout integrated circuits, Mid-IR, Staring arrays, Detector arrays, Gallium arsenide, Temperature metrology, Electrons, Black bodies

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Proceedings Article | 24 June 2014 Paper

Paper

High-performance SWIR HgCdTe FPA development on silicon substrates

R. Bommena, J. Bergeson, R. Kodama, J. Zhao, S. Ketharanathan, H. Schaake, H. Shih, S. Velicu, F. Aqariden, P. Wijewarnasuriya, N. Dhar

Proceedings Volume 9070, 907009 (2014) https://doi.org/10.1117/12.2053020

KEYWORDS: Short wave infrared radiation, Mercury cadmium telluride, Sensors, Silicon, Staring arrays, Quantum efficiency, Indium gallium arsenide, Detector arrays, Data modeling, Antireflective coatings

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Proceedings Article | 24 June 2014 Paper

Paper

Low-cost SWIR sensors: advancing the performance of ROIC-integrated colloidal quantum dot photodiode arrays

Ethan J. Klem, Jay Lewis, Chris Gregory, Dorota Temple, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 9070, 907039 (2014) https://doi.org/10.1117/12.2054215

KEYWORDS: Photodiodes, Short wave infrared radiation, Sensors, Quantum dots, Lead, Semiconductors, Readout integrated circuits, Temperature metrology, Silicon, Absorption

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Proceedings Article | 4 June 2014 Paper

Paper

Nanostructured detector technologies for optical sensing applications

Ashok Sood, Roger Welser, Yash Puri, Nibir Dhar, Dennis Polla, Priyalal Wijewarnasuriya, Madan Dubey

Proceedings Volume 9100, 91000N (2014) https://doi.org/10.1117/12.2058152

KEYWORDS: Zinc oxide, Ultraviolet radiation, Silica, Sensors, Gallium nitride, Resistance, Nanostructures, Scanning electron microscopy, Optical sensing, Temperature metrology

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Proceedings Article | 21 May 2014 Paper

Paper

InAsSb detector and FPA data and analysis

A. D'Souza, E. Robinson, A. Ionescu, D. Okerlund, T. De Lyon, R. Rajavel, H. Sharifi, N. Dhar, P. Wijewarnasuriya, C. Grein

Proceedings Volume 9100, 91000B (2014) https://doi.org/10.1117/12.2058150

KEYWORDS: Sensors, Quantum efficiency, Data modeling, Detector arrays, Readout integrated circuits, Mid-IR, Staring arrays, Diodes, Gallium arsenide, Temperature metrology

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Proceedings Article | 19 September 2013 Paper

Paper

Hetero-engineering infrared detectors with type-II superlattices

Z.-B. Tian, E. DeCuir, N. Gautam, S. Krishna, P. Wijewarnasuriya, J. Pattison, N. Dhar, R. Welser, A. Sood

Proceedings Volume 8868, 88680L (2013) https://doi.org/10.1117/12.2032205

KEYWORDS: Long wavelength infrared, Photodetectors, Gallium antimonide, Stereolithography, Optical instrument design, Superlattices, Quantum efficiency, Infrared detectors, Infrared radiation, Indium arsenide

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Proceedings Article | 19 September 2013 Paper

Paper

High-performance SWIR sensing from colloidal quantum dot photodiode arrays

Ethan Klem, Jay Lewis, Chris Gregory, Garry Cunningham, Dorota Temple, Arvind D'Souza, Ernest Robinson, P. Wijewarnasuriya, Nibir Dhar

Proceedings Volume 8868, 886806 (2013) https://doi.org/10.1117/12.2026972

KEYWORDS: Photodiodes, Short wave infrared radiation, Silicon, Quantum dots, Sensors, Lead, Semiconductors, Indium gallium arsenide, Readout integrated circuits, Temperature metrology

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Proceedings Article | 19 September 2013 Paper

Paper

Development of large area nanostructured AR coatings for EO/IR sensor applications

Ashok Sood, Gopal Pethuraja, Adam Sood, Roger Welser, Yash Puri, Pradeep Haldar, E. Fred Schubert, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 8868, 88680P (2013) https://doi.org/10.1117/12.2032206

KEYWORDS: Antireflective coatings, Nanostructuring, Glasses, Silica, Transmittance, Refractive index, Sensors, Reflection, Reflectivity, Nanorods

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Proceedings Article | 18 June 2013 Paper

Paper

Room temperature SWIR sensing from colloidal quantum dot photodiode arrays

Ethan Klem, Jay Lewis, Chris Gregory, Garry Cunningham, Dorota Temple, Arvind D'Souza, Ernest Robinson, P. Wijewarnasuriya, Nibir Dhar

Proceedings Volume 8704, 870436 (2013) https://doi.org/10.1117/12.2019521

KEYWORDS: Photodiodes, Short wave infrared radiation, Silicon, Quantum dots, Lead, Readout integrated circuits, Semiconductors, Heterojunctions, Absorption, Glasses

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Proceedings Article | 18 June 2013 Paper

Paper

High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices

M. Razeghi, A. Hoang, A. Haddadi, G. Chen, S. Ramezani-Darvish, P. Bijjam, P. Wijewarnasuriya, E. Decuir

Proceedings Volume 8704, 87041W (2013) https://doi.org/10.1117/12.2019145

KEYWORDS: Mid-IR, Short wave infrared radiation, Staring arrays, Photodetectors, Infrared imaging, Infrared radiation, Gallium antimonide, Quantum efficiency, Photodiodes, Superlattices

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Proceedings Article | 18 June 2013 Paper

Paper

MWIR InAsSb barrier detector data and analysis

A. D'Souza, E. Robinson, A. Ionescu, D. Okerlund, T. De Lyon, R. Rajavel, H. Sharifi, N. Dhar, P. Wijewarnasuriya, C. Grein

Proceedings Volume 8704, 87041V (2013) https://doi.org/10.1117/12.2018427

KEYWORDS: Sensors, Quantum efficiency, Mid-IR, Detector arrays, Data modeling, Diodes, Readout integrated circuits, Gallium arsenide, Infrared sensors, Metals

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Proceedings Article | 11 June 2013 Paper

Paper

Low-dark current structures for long-wavelength Type-II strained layer superlattice photodiodes

Zhaobing Tian, Eric DeCuir, Priyalal Wijewarnasuriya, James Pattison, Nutan Gautam, Sanjay Krishna , Nibir Dhar, Roger Welser , Ashok Sood

Proceedings Volume 8704, 870415 (2013) https://doi.org/10.1117/12.2015489

KEYWORDS: Long wavelength infrared, Stereolithography, Gallium antimonide, Photodetectors, Quantum efficiency, Interfaces, Antimony, Superlattices, Satellites, Infrared radiation

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Proceedings Article | 29 May 2013 Paper

Paper

Infrared (1-12 um) atomic and molecular emission signatures from energetic materials using laser induced breakdown spectroscopy

E. Kumi Barimah, U. Hömmerich, E. Brown, C. S.-C. Yang, S. Trivedi, F. Jin, P. Wijewarnasuriya, A. Samuels, A. Snyder

Proceedings Volume 8710, 87100V (2013) https://doi.org/10.1117/12.2017913

KEYWORDS: Laser induced breakdown spectroscopy, Infrared signatures, Long wavelength infrared, Sodium, Near infrared, Potassium, Infrared radiation, Chemical species, Infrared spectroscopy, FT-IR spectroscopy

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SPIE Journal Paper | 3 December 2012

Long-wave type-II superlattice detectors with unipolar electron and hole barriers

Eric DeCuir, Gregory Meissner, Priyalal Wijewarnasuriya, Nutan Gautam, Sanjay Krishna, Nibir Dhar, Roger Welser, Ashok Sood

OE, Vol. 51, Issue 12, 124001, (December 2012) https://doi.org/10.1117/12.10.1117/1.OE.51.12.124001

KEYWORDS: Diodes, Superlattices, Sensors, Diffusion, Quantum efficiency, FT-IR spectroscopy, Laser sintering, Long wavelength infrared, Infrared sensors, Infrared radiation

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Proceedings Article | 19 October 2012 Paper

Paper

Design and development of low dark current SLS detectors for IRFPA applications

Eric DeCuir, Nutan Gautam, Gregory Meissner, Priyalal Wijewarnasuriya, Sanjay Krishna, Nibir Dhar, Thomas Bramhall, Roger Welser, Ashok Sood

Proceedings Volume 8512, 85120N (2012) https://doi.org/10.1117/12.974237

KEYWORDS: Diodes, Sensors, Superlattices, Laser sintering, Diffusion, Infrared sensors, FT-IR spectroscopy, Quantum efficiency, Temperature metrology, Long wavelength infrared

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Proceedings Article | 15 October 2012 Paper

Paper

Development of large area nanostructure antireflection coatings for EO/IR sensor applications

Ashok Sood, Gopal Pethuraja, Adam Sood, Roger Welser, Yash Puri, Jaehee Cho, E. Schubert, Nibir Dhar, Priyalal Wijewarnasuriya, Martin Soprano

Proceedings Volume 8512, 85120R (2012) https://doi.org/10.1117/12.974239

KEYWORDS: Antireflective coatings, Nanostructuring, Glasses, Silica, Transmittance, Refractive index, Sensors, Reflection, Reflectivity, Nanorods

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Proceedings Article | 15 October 2012 Paper

Paper

Design and development of carbon nanotube and graphene based microbolometer for IR imaging applications

Ashok Sood, E. Egerton, Yash Puri, Neil Goldsman, Xi Shao, Akin Akturk, Nibir Dhar, Madan Dubey, Priyalal Wijewarnasuriya, Bobby Lineberry

Proceedings Volume 8512, 851205 (2012) https://doi.org/10.1117/12.974241

KEYWORDS: Bolometers, Graphene, Resistance, Microbolometers, Infrared radiation, Carbon nanotubes, Infrared bolometers, Infrared imaging, Sensors, Mid-IR

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Proceedings Article | 31 May 2012 Paper

Paper

Design and development of carbon nanotube-based microbolometer for IR imaging applications

Ashok Sood, E. James Egerton, Yash Puri, Gustavo Fernandes, Jimmy Xu, Akin Akturk, Neil Goldsman, Nibir Dhar, Madan Dubey, Priyalal Wijewarnasuriya, Bobby Lineberry

Proceedings Volume 8353, 83533A (2012) https://doi.org/10.1117/12.923020

KEYWORDS: Resistance, Bolometers, Microbolometers, Nanostructures, Carbon, Thermography, Infrared radiation, Capacitance, Carbon nanotubes, Infrared imaging

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Proceedings Article | 31 May 2012 Paper

Paper

MWIR InAs1-xSbx nCBn detectors data and analysis

A. D'Souza, E. Robinson, A. Ionescu, D. Okerlund, T. de Lyon, R. Rajavel, H. Sharifi, D. Yap, N. Dhar, P. Wijewarnasuriya, C. Grein

Proceedings Volume 8353, 835333 (2012) https://doi.org/10.1117/12.920495

KEYWORDS: Sensors, Quantum efficiency, Diffusion, Mid-IR, Temperature metrology, Optical fabrication, Absorption, Indium arsenide, Antimony, Reflectivity

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Proceedings Article | 25 May 2012 Paper

Paper

Quantum-structured III-V energy harvesting devices: pathways to ultra-high conversion efficiencies

Roger Welser, Ashok Sood, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 8377, 83770E (2012) https://doi.org/10.1117/12.922917

KEYWORDS: Indium gallium arsenide, Quantum wells, Indium, Gallium arsenide, Solar cells, Energy harvesting, Quantum efficiency, Diodes, Solar energy, Photovoltaics

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Proceedings Article | 15 February 2012 Paper

Paper

Plasmon-enhanced optical photodiodes based on MEH-PPV polymer and fullerene blend on ITO

Fred Semendy, Priyalal Wijewarnasuriya, Greg Meissner

Proceedings Volume 8249, 82491I (2012) https://doi.org/10.1117/12.908880

KEYWORDS: Diodes, Silver, Polymers, Nanoparticles, Metals, Resistance, Photodiodes, Aluminum, Particles, Fullerenes

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Proceedings Article | 17 September 2011 Paper

Paper

Carbon nanotube based microbolometer development for IR imager and sensor applications

Ashok Sood, E. James Egerton, Yash Puri, Gustavo Fernandes, Jin Ho Kim, Jimmy Xu, Neil Goldsman, Nibir Dhar, Priyalal Wijewarnasuriya, Bobby Lineberry

Proceedings Volume 8155, 815513 (2011) https://doi.org/10.1117/12.895277

KEYWORDS: Resistance, Bolometers, Infrared sensors, Nanostructures, Sensors, Carbon nanotubes, Infrared radiation, Thermography, Imaging systems, Image sensors

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Proceedings Article | 16 September 2011 Paper

Paper

Material characteristics of HgCdSe grown on GaSb and ZnTe/Si substrates by MBE

G. Brill, Y. Chen, P. Wijewarnasuriya

Proceedings Volume 8155, 815512 (2011) https://doi.org/10.1117/12.894894

KEYWORDS: Gallium antimonide, Mercury cadmium telluride, Mercury, Selenium, Staring arrays, Long wavelength infrared, Infrared materials, Arsenic, Tellurium, Infrared radiation

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Proceedings Article | 16 September 2011 Paper

Paper

Investigating the passivation of mercury cadmium telluride by atomic layer deposition of aluminum oxide

James Pattison, Priyalal Wijewarnasuriya

Proceedings Volume 8155, 815504 (2011) https://doi.org/10.1117/12.893760

KEYWORDS: Atomic layer deposition, Mercury cadmium telluride, Semiconducting wafers, Scanning electron microscopy, Plasma, Infrared sensors, Infrared imaging, Infrared technology, Silicon, Infrared detectors

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Proceedings Article | 16 September 2011 Paper

Paper

MBE growth of ZnTe and HgCdSe on Si: a new IR material

Yuanping Chen, Gregory Brill, David Benson, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 8155, 815511 (2011) https://doi.org/10.1117/12.894642

KEYWORDS: Silicon, X-rays, Crystals, Tellurium, Infrared materials, Gallium antimonide, Zinc, Semiconducting wafers, Etching, Compound semiconductors

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Proceedings Article | 2 June 2011 Paper

Paper

Nanostructure based EO/IR sensor development for homeland security applications

Ashok Sood, Roger Welser, Adam Sood, Yash Puri, Tariq Manzur, Nibir Dhar, Dennis Polla, Zhong Wang, Priyalal Wijewarnasuriya, A. F. M. Anwar

Proceedings Volume 8019, 801914 (2011) https://doi.org/10.1117/12.888086

KEYWORDS: Sensors, Zinc oxide, Ultraviolet radiation, Signal to noise ratio, Nanostructures, Homeland security, Solar energy, Infrared sensors, Staring arrays, Nanowires

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Proceedings Article | 24 May 2011 Paper

Paper

Nanostructure-based EO/IR focal plane array development for unattended ground sensor applications

Ashok Sood, E. James Egerton, Robert Richwine, Yash Puri, Tariq Manzur, Nibir Dhar, Dennis Polla, Zhong L. Wang, Gustavo Fernandes, Jimmy Xu, Priyalal Wijewarnasuriya, A. F. M. Anwar

Proceedings Volume 8046, 80460N (2011) https://doi.org/10.1117/12.888125

KEYWORDS: Zinc oxide, Sensors, Ultraviolet radiation, Signal to noise ratio, Nanostructures, Unattended ground sensors, Staring arrays, Interference (communication), Solar energy, Nanowires

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Proceedings Article | 21 May 2011 Paper

Paper

InAsSb detectors for visible to MWIR high-operating temperature applications

A. D'Souza, A. Ionescu, M. Salcido, E. Robinson, L. Dawson, D. Okerlund, T. de Lyon, R. Rajavel, H. Sharifi, D. Yap, M. Beliciu, S. Mehta, W. Dai, G. Chen, N. Dhar, P. Wijewarnasuriya

Proceedings Volume 8012, 80122S (2011) https://doi.org/10.1117/12.884550

KEYWORDS: Sensors, Quantum efficiency, Mid-IR, Silicon, Absorption, Absorbance, Reflection, Reflectivity, Diffusion, Visible radiation

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Proceedings Article | 18 May 2011 Paper

Paper

Quantum well and quantum dot energy harvesting devices

Roger Welser, Ashok Sood, Oleg Laboutin, Louis Guido, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 8035, 80351C (2011) https://doi.org/10.1117/12.888128

KEYWORDS: Indium gallium nitride, Solar cells, Quantum wells, Quantum dots, Photovoltaics, Gallium nitride, Quantum efficiency, Diodes, Energy harvesting, Solar energy

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Proceedings Article | 28 August 2010 Paper

Paper

Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures

Shashidhar Shintri, Sunil Rao, Huafang Li, Ishwara Bhat, Smita Jha, C. Liu, Thomas Kuech, Witold Palosz, Sudhir Trivedi, Fred Semendy, Priyalal Wijewarnasuriya, Yuanping Chen

Proceedings Volume 7768, 77680A (2010) https://doi.org/10.1117/12.861735

KEYWORDS: Silicon, Nanostructures, Semiconducting wafers, Germanium, Oxides, Nanoparticles, Silicon films, Lithography, Metalorganic chemical vapor deposition, Nanocrystals

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Proceedings Article | 26 August 2010 Paper

Paper

Nonequilibrium operation of long wavelength HgCdTe photo detectors for higher operating temperatures

Priyalal Wijewarnasuriya

Proceedings Volume 7780, 77800A (2010) https://doi.org/10.1117/12.870920

KEYWORDS: Diffusion, Doping, Mercury cadmium telluride, Electrons, Arsenic, Sensors, Temperature metrology, Mercury, Resistance, Long wavelength infrared

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Proceedings Article | 13 May 2010 Paper

Paper

Next generation nanostructure-based EO/IR focal plane arrays for unattended ground sensor applications

Ashok Sood, Robert Richwine, Yash Puri, Tariq Manzur, Nibir Dhar, Dennis Polla, Priyalal Wijewarnasuriya, Yaguang Wei, Jun Zhou, Cheng Li, Zhong Wang, Gustavo Fernandes, J. M. Jimmy Xu

Proceedings Volume 7693, 76930C (2010) https://doi.org/10.1117/12.852192

KEYWORDS: Sensors, Zinc oxide, Signal to noise ratio, Ultraviolet radiation, Nanostructures, Staring arrays, Interference (communication), Unattended ground sensors, Performance modeling, Nanowires

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Proceedings Article | 5 May 2010 Paper

Paper

Design and development of carbon nanostructure-based microbolometers for IR imagers and sensors

Ashok Sood, Robert Richwine, Yash Puri, Akin Akturk, Neil Goldsman, Siddharth Potbhare, Gustavo Fernandes, Chih-Hsun Hsu, Jin Ho Kim, Jimmy Xu, Nibir Dhar, Priyalal Wijewarnasuriya, Bobby Lineberry

Proceedings Volume 7679, 76791Q (2010) https://doi.org/10.1117/12.852730

KEYWORDS: Resistance, Bolometers, Nanostructures, Carbon, Sensors, Infrared sensors, Infrared radiation, Thermography, Imaging systems, Image sensors

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Proceedings Article | 5 May 2010 Paper

Paper

Fabrication of freestanding SWCNT networks for fast microbolometric focal plane array sensor

Jiri Cech, V. Swaminathan, P. Wijewarnasuriya, Luke Currano, Andriy Kovalskiy, H. Jain

Proceedings Volume 7679, 76792N (2010) https://doi.org/10.1117/12.855589

KEYWORDS: Sensors, Bolometers, Staring arrays, Resistance, Oxides, Infrared detectors, Infrared sensors, Temperature metrology, Silicon, Single walled carbon nanotubes

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Proceedings Article | 29 April 2010 Paper

Paper

GaAs-based quantum well solar cells for defense applications

Roger Welser, Ashok Sood, Yash Puri, Oleg Laboutin, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 7683, 76830Q (2010) https://doi.org/10.1117/12.852802

KEYWORDS: Solar cells, Gallium arsenide, Quantum wells, Indium gallium arsenide, Solar energy, Quantum efficiency, Heterojunctions, Indium gallium phosphide, Photovoltaics, Diodes

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Proceedings Article | 29 April 2010 Paper

Paper

High-efficiency solar cells based on micro-nano scale structures

Achyut Dutta, Robert Olah, Genki Mizuno, Rabi Sengupta, Jin-Hong Park, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 7683, 76830O (2010) https://doi.org/10.1117/12.855610

KEYWORDS: Solar cells, Silicon, Absorption, Solar energy, Semiconductors, Thin films, Thin film solar cells, Manufacturing, Crystals, Standards development

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Proceedings Article | 29 April 2010 Paper

Paper

High-efficiency InN-based quantum dot solar cells for defense applications

Roger Welser, Ashok Sood, Yash Puri, Oleg Laboutin, Louis Guido, Nibir Dhar, Priyalal Wijewarnasuriya

Proceedings Volume 7683, 76830R (2010) https://doi.org/10.1117/12.852764

KEYWORDS: Indium nitride, Quantum dots, Solar cells, Gallium nitride, Solar energy, Photovoltaics, Silicon, Ultraviolet radiation, Quantum efficiency, Metalorganic chemical vapor deposition

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Proceedings Article | 23 January 2010 Paper

Paper

Non-cryogenic operation of HgCdTe infrared detectors

S. Velicu, C. Grein, P. Emelie, A. Itsuno, J. Phillips, P. Wijewarnasuriya

Proceedings Volume 7608, 760820 (2010) https://doi.org/10.1117/12.838381

KEYWORDS: Mercury cadmium telluride, Doping, Infrared detectors, Photodiodes, Diffusion, Sensors, Instrument modeling, Long wavelength infrared, Mid-IR, Infrared radiation

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High sensitivity HgCdTe infrared detector arrays operating at 77 K can be tailored for response across the infrared spectrum (1 to 14 μm and beyond), and are commonly utilized for high performance infrared imaging applications. However, the cooling system required to achieve the desired sensitivity makes them costly, heavy and limits their applicability. Reducing cooling requirements and eventually operating at temperatures that could be reached with thermoelectric coolers can lead to lighter and more compact systems. However, at these elevated temperatures, the absorber layer becomes intrinsic, carrier concentrations are high and Auger processes typically dominate the dark current and noise characteristics. Auger processes can be suppressed by placing the absorber layer between an exclusion junction and an extraction junction at reverse bias. This reduces the minority carrier concentration in the absorber by several orders of magnitude below thermal equilibrium. The majority carrier concentration also drops significantly below thermal equilibrium to maintain charge neutrality, eventually reaching the extrinsic doping level. This device architecture produces a lower dark current density and lower noise at non-cryogenic temperatures than standard p-n junction photodiodes. Due to the precise control of the layer's thicknesses and compositions that could be achieved with molecular beam epitaxy (MBE), this technique is the method of choice for implementing these novel non-equilibrium devices. In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger suppression occurs. We identified critical material (absorber dopant concentration and minority carrier lifetime) requirements that must be satisfied for optimal performance characteristics. Experimental dark current-voltage characteristics between 120 and 300 K are fitted using numerical simulations. Based on this, the negative differential resistance (NDR) observed in experimental data is attributed to the full suppression of Auger-1 processes and the partial suppression of Auger-7 processes. We will also present an analysis and comparison of our theoretical and experimental device results in structures where Auger suppression was realized.

Proceedings Article | 28 August 2009 Paper

Paper

IRFPA technology utilizing HgCdTe/Si: successes, roadblocks, and material improvements

Gregory Brill, Yuanping Chen, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 7419, 74190L (2009) https://doi.org/10.1117/12.828592

KEYWORDS: Mercury cadmium telluride, Annealing, Silicon, Composites, Long wavelength infrared, Diodes, Mid-IR, X-rays, Sensors, Staring arrays

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Proceedings Article | 12 May 2009 Paper

Paper

EO/IR sensors development using zinc oxide and carbon nanostructures

Ashok Sood, Robert Richwine, Yash Puri, Dennis Polla, Nibir Dhar, Zhong Wang, J. M. Xu, Priyalal Wijewarnasuriya, Neil Goldsman, Martin Soprano, Bobby Lineberry

Proceedings Volume 7318, 731804 (2009) https://doi.org/10.1117/12.820502

KEYWORDS: Zinc oxide, Nanostructures, Sensors, Ultraviolet radiation, Carbon, Infrared sensors, Silicon carbide, Electrodes, Electrons, Nanowires

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Proceedings Article | 1 May 2009 Paper

Paper

Multispectral EO/IR sensor model for evaluating UV, visible, SWIR, MWIR and LWIR system performance

Ashok Sood, Robert Richwine, Yash Puri, Nibir Dhar, Dennis Polla, Priyalal Wijewarnasuriya

Proceedings Volume 7300, 73000H (2009) https://doi.org/10.1117/12.820899

KEYWORDS: Sensors, 3D modeling, Image sensors, Performance modeling, Data modeling, Staring arrays, Ultraviolet radiation, Thermal modeling, Signal to noise ratio, Nonuniformity corrections

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Proceedings Article | 3 September 2008 Paper

Paper

Improved spectral response model for backside illuminated photovoltaic devices

Priyalal Wijewarnasuriya, M. Stapelbroek, A. D'Souza

Proceedings Volume 7055, 70550D (2008) https://doi.org/10.1117/12.793820

KEYWORDS: Sensors, Mercury cadmium telluride, Interfaces, Quantum efficiency, Photovoltaics, Optical properties, Spectral models, Instrument modeling, Absorption, Matrices

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Proceedings Article | 18 September 2007 Paper

Paper

Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

A. Fred Semendy, Satpal Singh, Mark Litz, Priyalal Wijewarnasuriya, Kara Blaine, Nibir Dhar

Proceedings Volume 6703, 67030N (2007) https://doi.org/10.1117/12.732121

KEYWORDS: Sensors, X-rays, Gallium arsenide, X-ray detectors, Semiconducting wafers, Silicon, Metals, Semiconductors, Tungsten, Germanium

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Proceedings Article | 14 May 2007 Paper

Paper

Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy

Priyalal Wijewarnasuriya, Gregory Brill, Yuanping Chen, Nibir Dhar, Chris Grein, Silviu Velicu, P. Y. Emelie, HyeSon Jung, Sivalingam Sivanathan, Arvind D'Souza, Maryn Stapelbroek, John Reekstin

Proceedings Volume 6542, 65420G (2007) https://doi.org/10.1117/12.723162

KEYWORDS: Mercury cadmium telluride, Arsenic, Doping, Diffusion, Sensors, Molecular beam epitaxy, Annealing, Solids, Resistance, Quantum efficiency

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Proceedings Article | 17 May 2006 Paper

Paper

Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays

Ashok Sood, Yash Puri, Latika Becker, Meimei Tidrow, Raymond Balcerak, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Paul Boieriu, Chad Fulk, Siva Sivananthan, Joseph Yehoda, Steve Finke

Proceedings Volume 6206, 620615 (2006) https://doi.org/10.1117/12.667812

KEYWORDS: Silicon, Antireflective coatings, Silicon films, Long wavelength infrared, Semiconducting wafers, Ozone, Staring arrays, Thin films, Coating, Diamond

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Proceedings Article | 17 May 2006 Paper

Paper

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

Priyalal Wijewarnasuriya, Yuanping Chen, Gregory Brill, Nibir Dhar, Michael Carmody, Robert Bailey, Jose Arias

Proceedings Volume 6206, 620611 (2006) https://doi.org/10.1117/12.665956

KEYWORDS: Mercury cadmium telluride, Quantum efficiency, Long wavelength infrared, Composites, Silicon, Sensors, Tellurium, Diffusion, Molecular beam epitaxy, X-rays

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Proceedings Article | 17 November 2005 Paper

Paper

Novel multi-color image sensors for bio-chemical, bio-medical, and security applications

Achyut Dutta, Nibir Dhar, Priyalal Wijewarnasuriya, M. Saif Islam

Proceedings Volume 6008, 600812 (2005) https://doi.org/10.1117/12.634110

KEYWORDS: Sensors, Photodetectors, Absorption, Indium gallium arsenide, Image sensors, Quantum efficiency, Photodiodes, Mercury cadmium telluride, Silicon, Gallium

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Proceedings Article | 31 May 2005 Paper

Paper

I-V and noise performance in MWIR to VLWIR large area Hg1-xCdxTe photodiodes

A. D'Souza, M. Stapelbroek, P. Dolan, P. Wijewarnasuriya, E. Boehmer, D. Smith, J. Ehlert, J. Andrews

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.606042

KEYWORDS: Photodiodes, Sensors, Long wavelength infrared, Mid-IR, Resistance, Infrared radiation, Short wave infrared radiation, Manufacturing, Satellites, Diffusion

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The National Polar-orbiting Operational Environmental Satellite System (NPOESS), is overseen by the Integrated Program Office (IPO), a joint effort of the Department of Defense, Department of Commerce and NASA. One of the instruments on the NPOESS satellite is the Cross-track Infrared Sounder (CrIS) instrument. CrIS is a Fourier Transform interferometric infrared (FTIR) sensor used to measure earth radiance at high spectral resolution to derive pressure, temperature, and moisture profiles of the atmosphere from the ground on up. Each CrIS instrument contains three different cutoff wavelength (λ_c)focal plane modules (FPMs): an SWIR FPM [λ_c(98 K) ~ 5 mm], MWIR FPM [λ_c(98 K) ~ 9 mm] and a LWIR FPM [λ_c(81 K) ~ 15.5 mm]. There are nine large (850 mm diameter) photodiodes per FPM, the nine detectors being arranged in a 3 x 3 array. The nine detectors are placed under tight tolerances in the X, Y, and Z dimensions. The steps involved in the transfer of photodiodes as part of a newly fabricated wafer to the mounting of the photodiodes on the FPM involves many processing steps including a significant amount of dicing, cleaning, wire bonding and baking at elevated temperatures. Quantum efficiency and 1/f noise in Hg_1-xCd_xTe photodiodes are critical parameters that limit the sensitivity of infrared sounders. The ratio α, defined as the noise current in unit bandwidth i_n(f = 1 Hz, V_d, Δf = 1 Hz) to the dark current I_d(V_d), that is, α = i_n/I_d is one of the parameters used to select photodiodes for placement in FPMs. α is equivalent to √α_H/N that appears in the well-known Hooge expression. For the sixty-one, λ_c ~ 9 μm photodiodes measured at 60 mV reverse bias and at 98 K, the average value of α_dark = 1.3 x 10^-4 in the dark and α_PHOTO = i_n/I_PHOTO is ~ 2 x 10^-6 under illuminated conditions. These values of α are a factor of two lower than that reported previously. The λ_c ~ 15.5 μm photodiodes have average α_dark = 1.3 x 10^-5 with the highest performance, diffusion current limited photodiodes having values of α_dark in the mid 10^-6 range. All of the 850 μm diameter, λ_c ~ 15.5 μm photodiodes measured have excess low frequency noise, with the best performers having i_n(f = 100 Hz, V_d =-60 mV , Δf = 1 Hz) ~ 2 x 10^-11 A/Hz^1/2 and the best photodiode α_dark = 3.92 x 10^-6. I-V measurements, noise, and visual inspections are performed at several steps in the photodiodes manufacturing process. It was observed, following FPM fabrication, photodiode dark current and noise had increased from the initial pre-mounting leadless chip carrier (LCC) measurements for some of the nine photodiodes. The performance degradation observed led to an investigation into the cause (baking at elevated temperatures, mechanical handling, electrical stress etc.) of photodiode degradation that occurred between LCC and FPM testing. Correlations between I-V, noise and surface visual defects have been performed on some λ_c ~ 15.5 mm photodiodes. This paper outlines the results of the study, correlating the electrical performance observed to visual defects on the surface and to defects seen following cross sectioning of degraded photodiodes. In addition, other lessons learned and the corrective actions implemented that led to the successful manufacture of SWIR, MWIR and LWIR large photodiodes from the material growth to insertion into and successful demonstration of flight FPMs for the CrIS program are described.

Proceedings Article | 20 January 2005 Paper

Paper

Cross-track infrared sounder FPAA performance

Stacy Masterjohn, Arvind D'Souza, Larry Dawson, Peter Dolan, Genae Jefferson, Maryn Stapelbroek, Richard Willis, Priyalal Wijewarnasuriya, Ellen Boehmer, John Ehlert, James Andrews

Proceedings Volume 5655, (2005) https://doi.org/10.1117/12.583390

KEYWORDS: Photodiodes, Long wavelength infrared, Sensors, Short wave infrared radiation, Mid-IR, Quantum efficiency, Semiconducting wafers, Infrared radiation, Photons, Temperature metrology

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Proceedings Article | 22 October 2004 Paper

Paper

Design and development of high-performance radiation-hardened antireflection coatings for LWIR HgCdTe focal plane arrays

Ashok Sood, E. James Egerton, Sriraj Bhadra, Yash Puri, Gregory Brill, Priyalal Wijewarnasuriya, Yuanping Chan, Nibir Dhar, Meimei Tidrow, Dave Christian, Paul LoVecchio

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.565138

KEYWORDS: Silicon, Antireflective coatings, Long wavelength infrared, Mercury cadmium telluride, Silicon films, Staring arrays, Diamond, Thin film coatings, Thin films, Detector arrays

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Proceedings Article | 22 October 2004 Paper

Paper

MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Tae-Seok Lee, Jun Zhao, Yong Chang, Renganathan Ashokan, Sivalingam Sivananthan, Paul Boieriu, Yuanping Chen, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.568012

KEYWORDS: Mercury cadmium telluride, Mid-IR, Annealing, Arsenic, Heterojunctions, Silicon, Interfaces, Mercury, Sensors, Diffusion

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Proceedings Article | 30 August 2004 Paper

Paper

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-µm wavelength range

Priyalal Wijewarnasuriya, Nibir Dhar, Arvind D'Souza, Maryn Stapelbroek, Dennis Edwall, Jose Arias, Jagmohan Bajaj

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.540997

KEYWORDS: Sensors, Diffusion, Quantum efficiency, Photovoltaic detectors, Temperature metrology, Cadmium, Mercury cadmium telluride, Mercury, Mid-IR, Sensor performance

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Proceedings Article | 30 August 2004 Paper

Paper

LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates

Priyalal Wijewarnasuriya, Gregory Brill, Y. P. Chen, Nibir Dhar, Silviu Velicu

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.541606

KEYWORDS: Mercury cadmium telluride, Long wavelength infrared, Composites, X-rays, Silicon, Selenium, Sensors, Tellurium, Etching, Diffusion

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Proceedings Article | 10 October 2003 Paper

Paper

Composite substrate for large-format HgCdTe IRFPA

Nibir Dhar, Y. Chen, Gregory Brill, Paul Amirtharaj, Silviu Velicu, Paul Boieriu, Anthony Birdwell, Priyalal Wijewarnasuriya

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.487725

KEYWORDS: Silicon, Mercury cadmium telluride, Long wavelength infrared, Composites, Tellurium, Selenium, Semiconducting wafers, Zinc, X-rays, Sensors

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Proceedings Article | 23 January 2003 Paper

Paper

Noise in large-area CrlS Hg1-xCdxTe photovoltaic detectors

Arvind D'Souza, Maryn Stapelbroek, Stacy Masterjohn, Priyalal Wijewarnasuriya, Roger DeWames, David Smith, John Ehlert

Proceedings Volume 4820, (2003) https://doi.org/10.1117/12.453567

KEYWORDS: Sensors, Photovoltaic detectors, Medium wave, Amplifiers, Mid-IR, Long wavelength infrared, Sensor performance, Diodes, Diffusion, Mercury

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Proceedings Article | 23 January 2003 Paper

Paper

Cross-track infrared sounder FPAA performance

Stacy Masterjohn, Arvind D'Souza, Larry Dawson, Peter Dolan, Priyalal Wijewarnasuriya, John Ehlert

Proceedings Volume 4820, (2003) https://doi.org/10.1117/12.453568

KEYWORDS: Sensors, Mid-IR, Long wavelength infrared, Short wave infrared radiation, Photons, Simulation of CCA and DLA aggregates, Infrared radiation, Amplifiers, Photovoltaics, Quantum efficiency

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Proceedings Article | 5 August 2002 Paper

Paper

1/f noise in Hg1-xCdxTe detectors

Arvind D'Souza, Maryn Stapelbroek, Stacy Masterjohn, Priyalal Wijewarnasuriya, Roger DeWames, G. Williams

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478850

KEYWORDS: Sensors, Diffusion, Information operations, Temperature metrology, Diodes, Mercury cadmium telluride, Data modeling, Staring arrays, Infrared detectors, Photodetectors

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This paper investigates 1/f noise performance of Hg_1-xCd_xTe photovoltaic detectors when detector current is varied by changing detector area, bias, temperature and incident flux. Holding detector bias and temperature constant, measured 1/f noise current is proportional to the detector current. However for all detector areas measured, non-uniformity is observed in the noise current due to the varied quality of the detectors. Even for the λ_c=16μm , 4-μm-radius, diffusion-limited detectors at 78K held at reverse bias, the average and standard deviation in dark current is I_d=9.76+/- 1.59x10^-8A while the average and standard deviation in noise current at 1 Hz in a 1 Hz bandwidth is i_n=1.01+/- 0.63x10^-12A. For all detector areas measured at 100 mV reverse bias, the average and standard deviation in dark current to noise current ratio is α _D=i_n/I_d=1.39+/- 1.09x10^-5. Defects are presumed resident in the detectors that produce greater non- uniformity in the 1/f noise as compared to the dark current at 100 mV reverse bias. Noise was also measured as a function of temperature for two λ _c=16 micrometers detectors from 55 K to 100 K. The average and standard deviation in the noise current to dark current ratio is α_D=i_n/I_d=2.36+/- 0.83x10^-5 for the 26-micrometers -diameter detector and (alpha) _D=1.71+/- 0.69x10^-5 for the 16-micrometers -diameter detector. Dark and noise current were measured while changing the bias applied to a detector. In the diffusion-limited portion of the detector I-V curve, 1/f noise is independent of bias with α _D=i_n/I_d=1.51+/- 0.12x10^-5. When tunneling currents dominated, α_T=i_n/I_d=5.21+/- 0.83x10^-5. The 1/f noise associated with tunneling currents is a factor of three greater than the 1/f noise associated with diffusion currents. In addition, 1/f noise was measured on detectors held at -100 mV and 78 K under dark and illuminated conditions. The average noise to current ratio α_D was approximately 1.5 x 10^-5 for dark and photon-induced diffusion current. However, detector-to-detector variations exist even within a single chip. The two most important points are that non-uniformities in material/fabrication need to be addressed and that each individual type of current component has an associated 1/f noise current component, the magnitude of the relationship being different depending on the source current.

Proceedings Article | 12 November 2001 Paper

Paper

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote sensing applications

Priyalal Wijewarnasuriya, Majid Zandian, Jamie Phillips, Dennis Edwall, Roger DeWames, Gernot Hildebrandt, Jagmohan Bajaj, Jose Arias, Arvind D'Souza, Fergus Moore

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448180

KEYWORDS: Sensors, Quantum efficiency, Long wavelength infrared, Short wave infrared radiation, Mid-IR, Mercury cadmium telluride, Semiconducting wafers, Photovoltaic detectors, Diffusion, Photovoltaics

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Proceedings Article | 10 October 2001 Paper

Paper

LWIR, photovoltaic, Hg1-xCdxTe, and FPA performance for remote sensing applications

Larry Dawson, Arvind D'Souza, Christopher Rau, Stacy Marsh, John Stevens, Michael Salcido, David Chiaverini, Frank Mahoney, Dale Moleneaux, Allen Bojorquez, Craig Staller, Craig Yoneyama, Priyalal Wijewarnasuriya, William McLevige, John Ehlert, John Jandik, Michael Gangl, Jeffrey Derr, Fergus Moore

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445286

KEYWORDS: Staring arrays, Sensors, Long wavelength infrared, Amplifiers, Diodes, Remote sensing, Mirrors, Photovoltaics, Microlens, Mercury cadmium telluride

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Focal plane arrays (FPA's), used for remote sensing applications, are required to operate at high temperatures and are subject to high terrestrial background fluxes. Typical remote sensing applications like cloud/weather imagery, sea- surface temperature measurements, ocean color characterization, and land-surface vegetation indices also require FPAs that operate from the visible through the LWIR portion of the spectrum. This combination of harsh requirements have driven the design of a unique LWIR FPA, that operates at 80 K under 300 K background conditions, with an operating spectral range from 11.5 micrometers to 12.5 micrometers , and a spectral cutoff of 13.5 micrometers . The FPA consists of 2 side by side arrays of 1 X 60 HgCdTe, (grown by molecular beam epitaxy) photovoltaic, detector arrays bump bonded to a custom CMOS Si readout. The 2 arrays are completely independent, and can be operated as such. The readout unit cell uses two, current-mode, analog building blocks; a Current Conveyor (CC1) and a dynamic current mirror. The CC1 has input impedance below 300 Ohms and an injection efficiency that is independent of the detector characteristics. This combination extracts high performance and excellent sensitivity from detectors whose average RoA values are approximately 1.7 Ohm-cm² at T equals 80 K. The dynamic current mirror is used to subtract high background photocurrent while preserving excellent dynamic range. In addition to the performance enhancing readout, the detectors are manufactured with integral microlenses and operated in reverse bias to take advantage of their increased dynamic impedance. The dark currents associated with reverse bias operation are subtracted along with the background photocurrents by the dynamic current mirror. The expected and measured LWIR FPA performance will be presented. Measurements were performed on an LWIR FPA. Expected and measured FPA results are shown in the table below. The expected data are calculated from FPA models and compared to the measured values.

Proceedings Article | 10 October 2001 Paper

Paper

Cross-track infrared sounder FPA performance

Arvind D'Souza, Larry Dawson, Stacy Marsh, Richard Willis, Priyalal Wijewarnasuriya, Roger DeWames, Jose Arias, Jagmohan Bajaj, Gernot Hildebrandt, Fergus Moore

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445336

KEYWORDS: Sensors, Staring arrays, Mid-IR, Long wavelength infrared, Quantum efficiency, Short wave infrared radiation, Infrared radiation, Photovoltaics, Amplifiers, Photovoltaic detectors

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Proceedings Article | 17 July 2000 Paper

Paper

VLWIR HgCdTe photovoltaic detectors performance

Arvind D'Souza, Larry Dawson, Craig Staller, John Reekstin, Priyalal Wijewarnasuriya, Roger DeWames, William McLevige, Jose Arias, Dennis Edwall, Gernot Hildebrandt

Proceedings Volume 4028, (2000) https://doi.org/10.1117/12.391747

KEYWORDS: Sensors, Quantum efficiency, Photovoltaic detectors, Black bodies, Mercury cadmium telluride, Temperature metrology, Diffusion, Resistance, Diodes, Interfaces

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Very Long Wavelength InfraRed (VLWIR; (lambda) _c approximately equals 15 to 17 micrometer at 78 K) photovoltaic detector operating in the 78 K range are needed for remote sensing applications. This temperature range permits the use of passive radiators in spacecraft to cool the detectors. VLWIR ((lambda) _c approximately equals 15 to 17 micrometer at 78 K) photovoltaic detectors in a range of sizes (8 micrometer diameter to 1000 micrometer diameter) have been fabricated and their performance measured as a function of temperature. Molecular Beam Epitaxy (MBE) was used to grow n-type VLWIR Hg_1-xCd_xTe on lattice matched CdZnTe. Arsenic was implanted and the wafer was annealed to provide the p-type regions. All the material was grown with wider bandgap cap layers and consequently the detector architecture is the Double Layer Planar Heterostructure (DLPH) architecture. I_d - V_d versus temperature curves for 8 and 1000 micrometer diameter, (lambda) _c equals 17 micrometer at 78 K detectors indicate that the 8 micrometer diameter detector is diffusion limited for temperatures greater than 63 K even at a -200 mV bias. There is no appreciable tunneling at T equals 50 K and at -200 mV applied bias. At T equals 40 K tunneling commences at a bias approximately equals -80 mV. Below T equals 30 K, the diode is tunneling limited. The 1000 micrometer diameter detector is diffusion limited at bias values less than -50 mV at 78 K. At zero bias, the detector impedance is comparable to the series/contact resistance. Interfacing with the low (comparable to the contact and series resistance) junction impedance detector is not feasible. Therefore a custom pre- amplifier was designed to interface with the large VLWIR detectors in reverse bias. The detector is dominated by tunneling currents at temperatures less than 78 K. The 1000 micrometer diameter, (lambda) _c approximately equals 17 micrometer at 78 K detectors have dark currents approximately equals 160 (mu) A at a -100 mV bias and at 78 K. Detector non-AR coated quantum efficiency > 60% was measured at -100 mV bias in these large detectors and the response was constant across the (lambda) equals 7 micrometer to 15 micrometer spectral band. With AR- coating the quantum efficiency will be > 70%. Response was measured and non-linearity < 0.15% was calculated for the 1000 micrometer detectors. The flux values were in the 10¹⁷ ph/cm²/sec range and were changed by varying the blackbody temperature. In addition, a linear response was measured while varying the spot size incident on the 1000 micrometer detectors. This excellent response uniformity measured as a function of spot size implies that, low frequency spatial response variations are absent, for the 1000 micrometer detectors.

Proceedings Article | 26 July 1999 Paper

Paper

HgCdTe detectors and FPAs for remote sensing applications

Arvind D'Souza, Larry Dawson, Dan Berger, Stewart Clark, Priyalal Wijewarnasuriya, Jagmohan Bajaj, Jose Arias, William Tennant, Lester Kozlowski, Kadri Vural

Proceedings Volume 3698, (1999) https://doi.org/10.1117/12.354499

KEYWORDS: Sensors, Mercury cadmium telluride, Staring arrays, Detector arrays, Remote sensing, Readout integrated circuits, Short wave infrared radiation, Long wavelength infrared, Mid-IR, Custom fabrication

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Proceedings Article | 21 December 1998 Paper

Paper

HgCdTe multispectral infrared FPAs for remote sensing applications

Arvind D'Souza, Larry Dawson, Dan Berger, Arvel Markum, Jagmohan Bajaj, William Tennant, Jose Arias, Lester Kozlowski, Kadri Vural, Priyalal Wijewarnasuriya

Proceedings Volume 3498, (1998) https://doi.org/10.1117/12.333630

KEYWORDS: Mercury cadmium telluride, Sensors, Staring arrays, Mid-IR, Detector arrays, Short wave infrared radiation, Readout integrated circuits, Infrared sensors, Infrared imaging, Infrared radiation

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Infrared (IR) remote sensing imaging applications require high-performance Focal Plane Arrays (FPAs) operating in all ranges of the IR spectrum. Short wavelength (SWIR; 1 to 3 micrometer), middle wavelength (MWIR; 3 to 5 micrometer), mid- long wavelength (MLWIR; 6 to 8 micrometer), long wavelength (LWIR; 8 to 14 micrometer), and very long wavelength (VLWIR; greater than 14 micrometer). These diverse spectral bands require high performance detectors and Read Out Integrated Circuits (ROICs) to perform the multi-spectral mission requirements. Significant progress in the design and fabrication of HgCdTe detector arrays and Read Out Integrated Circuits (ROICs) over the past few years has led to the demonstration of high resolution, low noise and large format reliable FPAs. Hybrid FPAs have been measured and their performance parameters are presented. Focal Plane Array D* performance values have been obtained for a multitude of spectral ranges and configurations that include; (1) (lambda) _c equals 1.8 micrometer, 12 X 256 arrays operating at 295 K with median D* approximately 1.4 X 10¹² cm Hz^1/2/W, (2) (lambda) _c equals 2.4 micrometer, 12 X 256 arrays operating at 250 K with median D* equals 1.6 X 10¹² cm Hz^1/2/W, detectors used are grown by MBE on lattice matched CdZnTe, (3) PACE-1 detectors with (lambda) _c equals 2.5 micrometer, 1024 X 1024 arrays operating at 115 K with peak D* of 2.3 X 10¹³ cm Hz^1/2/W at a background flux (phi) _b equals 1.2 X 10¹¹ ph/cm²- s, (4) MBE HgCdTe on Silicon MWIR detectors have been fabricated and the detector R_oA performance for (lambda) _co approximately 5.0 micrometer is in the 10⁶ to 10⁷ ohm-cm² range at 78 K. (5) MBE HgCdTe on CdZnTe detectors, ((lambda) _c equals 15.8 micrometer at 65 K), 128 X 128 array operating at 40 K with peak D* of 2.76 X 10¹¹ cm Hz^1/2/W at a background flux (phi) _b equals 8.0 X 10¹⁵ ph/cm²-s. High performance 640 X 480 arrays imaging in the MWIR band have been fabricated on CdZnTe and PACE-1 substrates. The performance of these and additional FPAs will be presented.

Proceedings Article | 22 July 1998 Paper

Paper

Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications

Honnavalli Vydyanath, Priyalal Wijewarnasuriya, Sivalingam Sivananthan, Vaidya Nathan

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317625

KEYWORDS: Mercury, Indium, Tellurium, Infrared radiation, X-rays, Crystals, Cadmium, Heterojunctions, Information operations, Liquid phase epitaxy

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Proceedings Article | 1 September 1995 Paper

Paper

Recent progress in the doping of MBE HgCdTe

Sivalingam Sivananthan, Priyalal Wijewarnasuriya, Jean-Pierre Faurie

Proceedings Volume 2554, (1995) https://doi.org/10.1117/12.218203

KEYWORDS: Doping, Mercury cadmium telluride, Arsenic, Mercury, Annealing, Diffusion, Indium, Liquid phase epitaxy, Superlattices, Tellurium

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Proceedings Article | 10 December 1992 Paper

Paper

Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates

Jean-Pierre Faurie, Sivalingam Sivananthan, Priyalal Wijewarnasuriya

Proceedings Volume 1735, (1992) https://doi.org/10.1117/12.138618

KEYWORDS: Mercury, Mercury cadmium telluride, Crystals, Indium, Doping, Tellurium, Liquid phase epitaxy, Diffusion, Infrared detectors, Molecular beam epitaxy

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Showing 5 of 88 publications

Proceedings Volume Editor (17)

SPIE Conference Volume | 25 October 2024

Infrared Sensors, Devices, and Applications XIV

SPIE Conference Volume | 31 October 2023

Infrared Sensors, Devices, and Applications XIII

SPIE Conference Volume | 19 October 2022

Infrared Sensors, Devices, and Applications XII

SPIE Conference Volume | 17 August 2021

Infrared Sensors, Devices, and Applications XI

SPIE Conference Volume | 24 September 2020

Infrared Sensors, Devices, and Applications X

Showing 5 of 17 publications

Conference Committee Involvement (47)

Infrared Sensors, Devices, and Applications XV

3 August 2025 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications XII

13 April 2025 | Orlando, Florida, United States

Infrared Sensors, Devices, and Applications XIV

20 August 2024 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications XI

22 April 2024 | National Harbor, Maryland, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XIV

22 April 2024 | National Harbor, Maryland, United States

Infrared Sensors, Devices, and Applications XIII

22 August 2023 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XIII

2 May 2023 | Orlando, Florida, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications X

1 May 2023 | Orlando, Florida, United States

Infrared Sensors, Devices, and Applications XII

24 August 2022 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XII

5 April 2022 | Orlando, Florida, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications IX

4 April 2022 | Orlando, Florida, United States

Infrared Sensors, Devices, and Applications XI

4 August 2021 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications VIII

12 April 2021 | Online Only, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XI

12 April 2021 | Online Only, Florida, United States

Infrared Sensors, Devices, and Applications X

24 August 2020 | Online Only, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications X

27 April 2020 | Online Only, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications VII

27 April 2020 | Online Only, California, United States

Infrared Sensors, Devices, and Applications IX

14 August 2019 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications VI

15 April 2019 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications IX

15 April 2019 | Baltimore, MD, United States

Infrared Sensors, Devices, and Applications VIII

22 August 2018 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications V

16 April 2018 | Orlando, FL, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VIII

15 April 2018 | Orlando, FL, United States

Infrared Sensors, Devices, and Applications VII

9 August 2017 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications IV

12 April 2017 | Anaheim, CA, United States

Infrared Sensors, Devices, and Applications VI

31 August 2016 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications III

20 April 2016 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VII

19 April 2016 | Baltimore, MD, United States

Infrared Sensors, Devices, and Applications V

12 August 2015 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications II

22 April 2015 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications VI

21 April 2015 | Baltimore, MD, United States

Infrared Sensors, Devices, and Applications IV

18 August 2014 | San Diego, California, United States

Image Sensing Technologies: Materials, Devices, Systems, and Applications

7 May 2014 | Baltimore, MD, United States

Energy Harvesting and Storage: Materials, Devices, and Applications V

5 May 2014 | Baltimore, MD, United States

Quantum Sensing and Nanophotonic Devices XI

2 February 2014 | San Francisco, California, United States

Infrared Sensors, Devices, and Applications III

26 August 2013 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications IV

29 April 2013 | Baltimore, Maryland, United States

Infrared Sensors, Devices, and Applications II

14 August 2012 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications III

23 April 2012 | Baltimore, Maryland, United States

Infrared Sensors, Devices, and Applications

23 August 2011 | San Diego, California, United States

Energy Harvesting and Storage: Materials, Devices, and Applications II

25 April 2011 | Orlando, Florida, United States

Infrared Detector Devices and Photoelectronic Imagers V

5 August 2010 | San Diego, California, United States

Micro- and Nanotechnology Sensors, Systems, and Applications II

5 April 2010 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications

5 April 2010 | Orlando, Florida, United States

Infrared Detector Devices and Photoelectronic Imagers IV

5 August 2009 | San Diego, California, United States

Nanoepitaxy: Homo and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials

3 August 2009 | San Diego, California, United States

Micro- and Nanotechnology Sensors, Systems, and Applications

15 April 2009 | Orlando, Florida, United States

Showing 5 of 47 Conference Committees

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