Mr. Qi Cheng Profile

Qi Cheng

Ph.D Student at Univ of Missouri

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 16 March 2016 Paper

Impacts of process variability of alternating-material self-aligned multiple patterning on SRAM circuit performance

Ting Han, Chuyang Hong, Qi Cheng, Yijian Chen

Proceedings Volume 9781, 97810E (2016) https://doi.org/10.1117/12.2218992

KEYWORDS: Optical lithography, Device simulation, TCAD, Fabrication, Manufacturing, Lithography, Yield improvement, Line width roughness, Transistors, Visualization

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Proceedings Article | 18 March 2015 Paper

A compact model to predict pillar-edge-roughness effects on 3D vertical nanowire MOSFETs using the perturbation method

Pu Wang, Chuyang Hong, Qi Cheng, Yijian Chen

Proceedings Volume 9427, 94270W (2015) https://doi.org/10.1117/12.2085919

KEYWORDS: 3D modeling, Field effect transistors, TCAD, Instrument modeling, Oxides, Doping, Metrology, 3D metrology, Statistical analysis, Nanowires

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Proceedings Article | 18 March 2015 Paper

Statistical modeling of SRAM yield performance and circuit variability

Qi Cheng, Yijian Chen

Proceedings Volume 9427, 94270M (2015) https://doi.org/10.1117/12.2085844

KEYWORDS: Optical lithography, Failure analysis, Statistical analysis, Line width roughness, TCAD, Circuit switching, Logic, Manufacturing, Data analysis

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Proceedings Article | 28 March 2014 Paper

A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method

Qi Cheng, Jun You, Yijian Chen

Proceedings Volume 9053, 90530U (2014) https://doi.org/10.1117/12.2046221

KEYWORDS: TCAD, Instrument modeling, Oxides, Line edge roughness, Silicon, Sodium, Electronics engineering, Computer engineering, Device simulation

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Proceedings Article | 29 March 2013 Paper

SRAM circuit performance in the presence of process variability of self-aligned multiple patterning

Wei Xiao, Qi Cheng, Yijian Chen

Proceedings Volume 8684, 86840K (2013) https://doi.org/10.1117/12.2011686

KEYWORDS: Line width roughness, Optical lithography, Critical dimension metrology, Device simulation, 193nm lithography, TCAD, Manufacturing, Double patterning technology, Lithography

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